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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Enhanced Photoluminescence and Prolonged Carrier Lifetime through Laser Radiation Hardening and Self-Healing in Aged MAPbBr3 Perovskites Encapsulated in NiO Nanotubes

Organic-inorganic perovskites hold great promise as optoelectronic semiconductors for pure color light emitting and photovoltaic devices. However, challenges persist regarding their photostability and chemical stability, which limit their extensive applications. This paper investigates the laser radiation hardening and self-healing-induced properties of aged MAPbBr3 perovskites encapsulated in NiO nanotubes (MAPbBr3@NiO) using photoluminescence (PL) and fluorescence lifetime imaging (FLIM). After deliberately subjecting the MAPbBr3@ NiO to atmospheric conditions for two years, the sample remains remarkably stable. It exhibits no changes in PL wavelength during UV laser irradiation and self-healing. Furthermore, exposure to UV light at 375 nm enhances the PL of the self-healed MAPbBr3@NiO. FLIM analysis sheds light on the mechanism behind photodegradation, self-healing, and PL enhancement. The results indicate the involvement of many carrier-trapping states with low lifetime events and an increase in peak lifetime after self-healing. The formation of trapping states at the perovskite/nanotube interface is discussed and tested. This study provides new insights into the dynamics of photo-carriers during photodegradation and self-healing in organic-inorganic perovskites.

36 MATERIALS SCIENCE↗
NASA NTRS1987

Surface characterization of InP using photoluminescence

Photoluminescence (PL) measurements have been performed on InP samples in situ during various surface treatments including chemical etching, wet anodization, and low-pressure chemical vapor deposition. It was found, in agreement with previously published results, that the magnitude of the PL signal varies markedly with surface treatment due presumably to changes in either surface-state density, and/or surface potential. In an attempt to assess the effectiveness of this noninvasive method as a tool for characterizing and monitoring the progressive development of a semiconductor surface during processing, a number of experiments on InP have been performed. The results indicate that although some uncertainty may exist in assigning a mechanism for the PL change in any given experiment, the general trend appears to be that surface degradation results in a reduced signal. As a result, process steps which enhance the PL intensity are likely to be beneficial in the preparation of a high-quality interface.

Chang, R. R.↗
NASA NTRS1990

Atmospheric pressure organometallic vapor-phase epitaxial growth of (Al/x/Ga/1-x/)0.51In0.49P (x from 0 to 1) using trimethylalkyls

This paper describes growth of (Al/x/Ga/1-x)0.51In0.49P layers (with x from 0 to 1) lattice-matched to (001)-oriented GaAs substrates by atmospheric-pressure OMVPE, using trimethylindium, trimethylaluminum, and trimethylgallium and PH3 as source materials in a horizontal reactor. Excellent surface morphologies were obtained over the entire range of Al compositions at a growth temperature of 680 C. Photoluminescence (PL) was observed for all samples with x values not below 0.52, with PL peak energies as high as 2.212 eV. The PL FWHM for Ga(0.51)In(0.49)P was 7.2 meV at 10 K and 35 meV at 300 K. At 10 K, the PL intensity was nearly a constant over the composition range from x = 0 to 0.52.

Cao, D. S.↗
NASA NTRS1992

Photoluminescence structure, and composition of laterally anodized porous Si

We have studied the photoluminescence (PL), structure, and composition of laterally anodized porous Si. Broad PL peaks were observed centered between about 620-720 nm with strong intensities measured from 500 to 860 nm. Macroscopic variations in PL intensities and peak positions are explained in terms of the structure and anodization process. Structural studies suggest that the PL appears to originate from a multilayered porous Si structure in which the top two layers are amorphous. X-ray diffraction spectra also suggest the presence of a significant amorphous phase. In addition to high concentrations of B and N, we have measured extremely high concentrations much greater than 10 exp 20 cu cm of H, C, O, and F. Our results indicate that laterally anodized porous Si does not fit the crystalline Si quantum wire model prevalent in the literature suggesting that some other structure is responsible for the observed luminescence.

Jung, K. H.↗
NASA NTRS1993

Visible photoluminescence of porous Si(1-x)Ge(x) obtained by stain etching

We have investigated visible photoluminescence (PL) from thin porous Si(1-x)Ge(x) alloy layers prepared by stain etching of molecular-beam-epitaxy-grown material. Seven samples with nominal Ge fraction x varying from 0.04 to 0.41 were studied at room temperature and 80 K. Samples of bulk stain etched Si and Ge were also investigated. The composition of the porous material was determined using X-ray photoemission spectroscopy and Rutherford backscattering techniques to be considerably more Ge-rich than the starting epitaxial layers. While the luminescence intensity drops significantly with the increasing Ge fraction, we observe no significant variation in the PL wavelength at room temperature. This is clearly in contradiction to the popular model based on quantum confinement in crystalline silicon which predicts that the PL energy should follow the bandgap variation of the starting material. However, our data are consistent with small active units containing only a few Si atoms that are responsible for the light emission. Such units are present in many compounds proposed in the literature as the cause of the visible PL in porous Si.

Ksendzov, A.↗
NASA NTRS2002

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. The following are the research progress in the past two years. In-situ monitoring of partial pressure by optical absorption technique and visual observation of the growing crystal were performed during vapor growth of ZnSe. Low-temperature photoluminescence (PL) spectra and glow discharge mass spectroscopy (GDMS) were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during crystal growth process. Optical characterization was performed on wafers sliced from the grown crystals of ZnSe, ZnTe and ZnSe(1-x),Te(x), (0<x<0.4). Energy band gaps at room temperature were determined from optical transmission measurements and a best fit curve to the band gap vs. composition, x, data gives a bowing parameter of 1.45. Low-temperature photoluminescence (PL) spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for the ZnSe(1-x),Te(x), samples, 0.09<x<0.39. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted as being associated with the exciton bound to Te clusters because of the high Te content in these samples. To validate numerical codes, in-situ monitoring during the PVT of HgI2 was designed. Optical absorption spectra of the vapor phase over HgI2 were measured for wavelengths between 200 and 600nm at sample temperatures between 349 and 610K. The Beer's Law constants for 15 wavelengths between 200 and 440 nm were determined. From these constants the vapor pressure of HgI2 was established as a function of temperature for the liquid and the solid Beta-phases To characterize the growth conditions during the PVT growth of In-doped ZnSe the optical absorbance of the vapor phase over the In-Se system were measured and were used to obtain the partial pressures of Se2(g) and In2Se(g).

Su, Ching-Hua↗
NASA NTRS2005

Influence of Growth Parameters and Annealing on Properties of MBE Grown GaAsSbN SQWs

In this paper we report the growth of GaAsSbN/GaAs single quantum well (SQW) heterostructures by molecular beam epitaxy (MBE) and their properties. A systematic study has been carried out to determine the effect of growth conditions, such as the source shutter opening sequence and substrate temperature, on the structural and optical properties of the layers. The substrate temperatures in the range of 450-470 C were found to be optimal. Simultaneous opening of the source shutters (SS) resulted in N incorporation almost independent of substrate temperature and Sb incorporation higher at lower substrate temperatures. The effects of ex-situ annealing in nitrogen ambient and in-situ annealing under As ovepressure on the optical properties of the layers have also been investigated. A significant increase in photoluminescence (PL) intensity with reduced full width at half maxima (FWHM) in conjunction with a blue shift in the emission energy was observed on 10 annealing the samples. In in-situ annealed samples, the PL line shapes were more symmetric and the temperature dependence of the PL peak energy indicated significant decrease in the exciton localization energy as exhibited by a less pronounced S-shaped curve. The inverted S-shaped curve observed in the temperature dependence of PL FWHM is also discussed. 1.61 micrometer emission with FWHM of 25 meV at 20K has been obtained in in-situ annealed GaAsSbN/GaAs SQW grown at 470 C by SS.

Wu, Liangjin↗
NASA NTRS2010

Optical Studies on Antimonide Superlattice Infrared Detector Material

In this study the material quality and optical properties of type II InAs/GaSb superlattices are investigated using transmission and photoluminescence (PL) spectroscopy. The influence of the material quality on the intensity of the luminescence and on the electrical properties of the detectors is studied and a good correlation between the photodetector current-voltage (IV) characteristics and the PL intensity is observed. Studies of the temperature dependence of the PL reveal that Shockley-Read-Hall processes are limiting the minority carrier lifetime in both the mid-IR wavelength and the long-IR wavelength detector material studied. These results demonstrate that PL spectroscopy is a valuable tool for optimization of infrared detectors.

heterostructure↗
NASA NTRS2020

How Loud is X-59's Shaped Sonic Boom?

NASA’s X-59 Quiet SuperSonic Technology low boom flight demonstrator aircraft is designed to produce a shaped sonic boom or “sonic thump” of 75 dB Perceived Level (PL) at the ground. One communication challenge that NASA’s Low Boom Flight Demonstration Mission faces is how to describe the sonic thump to the public, most of whom have never heard a sonic thump or a sonic boom. Furthermore, the public is unfamiliar with the acoustic metrics such as PL used to describe impulsive sounds. One technique to describe unfamiliar sounds using words and graphics only is to put them in the context of more familiar sounds, both in terms of acoustical level and in terms of sound type (continuous vs. impulsive). In this work, a database of recordings of familiar impulsive noise sources at known distances and their associated PL values was assembled and is available online. The comparison of these sounds can be framed as a “thermometer” of acoustic levels. An example acoustic thermometer graphic is presented. Additionally, the impulsive sounds’ one-third octave band sound pressure levels and sone spectra are compared to that of a simulated X-59 ground waveform. These show the origin of differences in the PL of each sound.

sonic boom↗
NASA NTRSDate not supplied

NASA and Blue Origin’s Flight Assessment of Precision Landing Algorithms Computing Performance

NASA’s Safe and Precise Landing - Integrated Capabilities Evolution (SPLICE) project continues NASA’s work in the development and testing of technologies for Precision Landing and Hazard Avoidance (PL&HA). This paper presents results characterizing how SPLICE flight software utilizes the shared computing resources of the Descent Landing Computer (DLC), one of the PL&HA technologies under development. The SPLICE technologies are being tested as an integrated payload on Blue Origin’s New Shephard suborbital vehicle. The results presented in this paper are measured by applications running in and with the flight software both in flight, and in a high-fidelity Hardware-in-the-Loop (HWIL) simulation environment. Linux utilities to measure performance are also executed from the command line in the HWIL configuration. Performance measurements of the SPLICE workloads executing on the DLC provide insight on how efficiently the software is utilizing the DLC resources. Examples of how these measurements have guided improvements in the flight code are presented. In addition, the DLC uses a commercial processor as a surrogate for NASA’s High Performance Spaceflight Computing (HPSC) processor. This work provides insight on how an HPSC system may perform delivering PL&HA capabilities on a future mission. The measurements also can be used to infer architectural requirements for PL&HA capabilities, informing the HPSC project and other flight computer development efforts. Examples of the measurements collected include processor utilization, I/O bandwidth, cache and branch misses, and application profiles.

Precision Landing and Hazard Avoidance↗
NASA NTRSDate not supplied

NASA and Blue Origin’s Flight Assessment of Precision Landing Algorithms Computing Performance

NASA’s Safe and Precise Landing - Integrated Capabilities Evolution (SPLICE) project continues NASA’s work in the development and testing of technologies for Precision Landing and Hazard Avoidance (PL&HA). This paper presents results characterizing how SPLICE flight software utilizes the shared computing resources of the Descent Landing Computer (DLC), one of the PL&HA technologies under development. The SPLICE technologies are being tested as an integrated payload on Blue Origin’s New Shepard suborbital vehicle. The results presented in this paper are measured by applications running in and with the flight software both in flight, and in a high-fidelity Hardware-in-the-Loop (HWIL) simulation environment. Linux utilities to measure performance are also executed from the command line in the HWIL configuration. Performance measurements of the SPLICE workloads executing on the DLC provide insight on how efficiently the software is utilizing the DLC resources. Examples of how these measurements have guided improvements in the flight code are presented. In addition, the DLC uses a commercial processor as a surrogate for NASA’s High-Performance Spaceflight Computing (HPSC) processor. This work provides insight on how an HPSC system may perform delivering PL&HA capabilities on a future mission. The measurements also can be used to infer architectural requirements for PL&HA capabilities, informing the HPSC project and other flight computer development efforts. Examples of the measurements collected include processor utilization, I/O bandwidth, cache and branch misses, and application profiles.

Precision Landing↗
NASA NTRSDate not supplied

The noise dose range of the X-59 estimated from propagation simulations

NASA’s X-59 aircraft will soon be flown in a series of low-boom community noise surveys across the USA. Community test experimental designs will include noise dose schedules, which require an estimate of the noise dose range that X-59 can produce. To determine the dose range, propagation simulations using NASA’s PCBoom code were completed using CFD-generated X-59 C612A near-field pressure data for an on-design condition (Mach 1.4 at 53,200 feet) and two off-design conditions (Mach 1.4 at 46,000 ft and Mach 1.3 at 43,000 ft). Near-field data at four cardinal aircraft headings were propagated through one year of realistic atmospheric profiles from the Climate Forecast System Version 2 database at several USA locations. Statistics of the mean and range of the Perceived Level (PL) of the booms in the inner 40 km of each carpet as well as the carpet width were computed. Results indicate the typical inner carpet mean PL is approximately 70-87 dB depending on the aircraft condition. The typical PL range across the inner carpet is 6-8 dB (on-design) and 5-13 dB (off-designs). The carpet widths ranged from 32-55 km. Understanding these quantities for various flight and atmospheric conditions is important for planning X-59 community noise surveys.

X-59↗
DOE OSTI2023

Dark Exciton in 2D Hybrid Halide Perovskite Films Revealed by Magneto-Photoluminescence at High Magnetic Field

Here, a comprehensive study of the exciton fine structure (EFS) is presented in 2D-phenethylammonium lead iodide films using magnetic field-induced polarization of photoluminescence (PL) in both Faraday and Voigt configurations at fields up to 25 Tesla. Three exciton bands are identified in the PL spectrum associated with bound, dark, and bright excitons, respectively. Under a high magnetic field in Faraday/Voigt configuration, large field-induced circular/linear polarization is observed in the PL band related to the dark exciton, which is magnetically activated. Furthermore, it is found that the dark exciton has an anomalous field-induced circular polarization, which cannot be explained by the classical Boltzmann distribution of spin-polarized species. These findings are well explained by an effective mass model that includes exchange terms unique to the monoclinic symmetry as a perturbation of the EFS in the approximate tetragonal symmetry. It is also confirmed that the field-induced linear polarization is sensitive to the monoclinic exchange term, whereas the field-induced circular polarization is immune to such term.

14 SOLAR ENERGY↗
DOE OSTI2021

Proton-Radiation Tolerant All-Perovskite Multijunction Solar Cells

Radiation-resistant but cost-efficient, flexible, and ultralight solar sheets with high specific power (W g -1 ) are the "holy grail" of the new space revolution, powering private space exploration, low-cost missions, and future habitats on Moon and Mars. Herein, this study investigates an all-perovskite tandem photovoltaic (PV) technology that uses an ultrathin active layer (1.56 micrometers) but offers high power conversion efficiency, and discusses its potential for high-specific-power applications. This study demonstrates that all-perovskite tandems possess a high tolerance to the harsh radiation environment in space. The tests under 68 MeV proton irradiation show negligible degradation (<6%) at a dose of 10 13 p + cm -2 where even commercially available radiation-hardened space PV degrade >22%. Using high spatial resolution photoluminescence (PL) microscopy, it is revealed that defect clusters in GaAs are responsible for the degradation of current space-PV. By contrast, negligible reduction in PL of the individual perovskite subcells even after the highest dose studied is observed. Studying the intensity-dependent PL of bare low-gap and high-gap perovskite absorbers, it is shown that the V OC , fill factor, and efficiency potentials remain identically high after irradiation. Radiation damage of all-perovskite tandems thus has a fundamentally different origin to traditional space PV.

14 SOLAR ENERGY↗
DOE OSTI2025

Halide perovskite-polymer composite film for bright and stable light-emitting devices

Stability is the primary hindrance for the application of halide perovskite material in light-emitting devices, solar cells, and other devices. In this work, halide perovskite and polymer composite film have been prepared for stable and bright light-emitting devices. Pure-phase Cs4PbBr6 crystals have been synthesized, and their photoluminescence (PL) properties and fluorescence lifetimes have been investigated. The Cs 4 PbBr 6 crystals exhibited high uniformity but underwent rapid photodegradation under light irradiation. To address this issue, we prepared bright light-emitting devices using composite of Cs 4 PbBr 6 crystals and polyethylene oxide (PEO) as the emission layer. The aim was to improve the optical and physical properties of halide perovskites, such as photodegradation and stability. PEO, with its excellent film-forming ability, created a uniform and dense film on the halide perovskite surface, filling microscopic defects and providing a protective barrier. FTIR, morphology, and PL analyses confirmed the protective role of the halide perovskite and polymer composite film. The composite film light-emitting devices demonstrated improved stability and higher PL brightness, with a peak brightness approaching 3 × 10 8 cd/m 2 , which was approximately 75% higher than the pure halide perovskite devices.

Composite film↗
DOE OSTI2025

Explainable artificial intelligence relates perovskite luminescence images to current-voltage metrics

As the demand for low-cost, high-efficiency solar energy technologies grows, metal halide perovskite (MHP) solar cells have emerged as a promising candidate for next-generation photovoltaics due to their high power conversion efficiencies. However, their poor durability and issues with manufacturing consistency remain significant barriers to commercialization. In this work, we develop deep learning models to support materials characterization and provide insight into features and processes influencing performance. The models are trained using transfer learning of a pretrained model to predict relevant current-voltage (IV) metrics based on different combinations of input electroluminescence (EL) and photoluminescence (PL) images of MHP devices. We examine which image types are most informative in accurately predicting different IV metrics. Additionally, we use explainable artificial intelligence (XAI) techniques to provide insights into specific spatial features in the devices that drive differences in performance. We find that stabilized luminescence images (e.g. those collected after biasing the devices for at least 1 min) are better for predicting metrics of open-circuit voltage (by PL) and short-circuit current (by PL with EL), but that predicting fill factor and overall power output may use the time-evolution of EL images. Based on attribution masks generated by integrated gradients for each device performance metric, we further suggest different loss mechanisms associated with categories of large and small spatial defects. Overall, this case study highlights the potential applicability of XAI methodology for streamlining MHP device analysis and accelerating detailed understanding of the relationships between spatial defects and impacts on performance.

14 SOLAR ENERGY↗
DOE OSTI2020

Size- and concentration-dependent Eu 2+ /Eu 3+ mixed luminescent characteristics of rare-earth-doped CaF 2 nanoparticles and their monolithic epoxy nanocomposites

CaF 2 is a promising luminescent host material for a wide range of applications, due to its high transparency, non-hygroscopy, low refractive index, low density, low backscattering efficiency, and abundance in nature. Here we report the photoluminescence (PL) and cathodoluminescence (CL) characteristics of rare-earth-doped CaF 2 nanoparticles and their composite monoliths with epoxy with visible emissions. The CaF 2 nanoparticles of ca. 36, 108 and 305 nm were prepared by a facile solution-mixing process and subsequent hydrothermal treatment. As the particle size decreases, the luminescence intensity increases for single-doped particles, while oppositely decreases for codoped particles because of energy transfer. Further, Eu 2+ - and Tb 3+ -codoped CaF 2 nanoparticles exhibit red emission, providing an efficient path for red emission through an energy transfer by Tb 3+ bridging without direct Eu 3+ doping. The effects of size and concentration are found to be pronounced in CL than PL, as the charge transfer between Eu 2+ and Eu 3+ reduces the concentration quenching in CL. The luminescence emission characteristics of epoxy/CaF 2 monoliths are different from those of particles due to the interactions with the epoxy molecules, and thus the energy transfer is hindered in PL while not in CL, enabling them for high-energy irradiation applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Critical role of solvation on CC13 porous organic cages for design of porous liquids

Efficient carbon capture requires the design of new materials with high CO 2 selectivity and gas adsorption capacity that can be incorporated into existing industrial processes. Porous liquids (PLs) are promising candidate materials that consist of a nanoporous host and a solvent forming a liquid with permanent porosity based on exclusion of the solvent from the interior of the nanoporous host. Stable PLs are based on solvent-nanoporous host interactions, which can be evaluated through molecular simulations. Here, time- and temperature-dependent density functional theory simulations were performed between four solvents, 2-bromophenol, 4-methylphenol, 2,4-dimethylphenol, and cyclohexanone and the CC13 porous organic cage (POC) as a prototypical PL composition. Overall, minimal reactions occurred in the PL including no changes in the POC structure. Additionally, POC-solvent coordination occurred through interactions of neighboring functional groups such as methyl/bromide and hydroxyl on the solvent molecules with the POC surface. Therefore, the location rather than the number of functional groups on the solvent molecule controls the POC-solvent interactions. Additionally, the POC pore window contracted or expanded up to 8% during solvation, which correlates with the experimental solubility and static solvent-POC binding, where solvents that caused less contraction of the POC pore window increased POC solubility. Finally, these results allow for the design of optimized POC-based PL compositions based on solvent-nanoporous host binding and variation in the pore window during solvation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗