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Test were conducted to measure the performance of the 20-GHz solid state, proof-of-concept amplifier. The amplifier operates over the 17.7 to 20.2-GHz frequency range and uses high power gallium arsenide field effect transistors. The amplifier design and test methods are briefly described. NASA and contractor performance data are compared.
Improved grid-array amplifiers operating at millimeter and submillimeter wavelengths developed for use in communications and radar. Feedback suppressed by making input polarizations orthogonal to output polarizations. Amplifier made to oscillate by introducing some feedback. Several grid-array amplifiers concatenated to form high-gain beam-amplifying unit.
A noncryogenic, S-band parametric amplifier operating in the 2.2 to 2.3 GHz band and having an average input noise temperature of less than 30 K was built and tested. The parametric amplifier module occupies a volume of less than 1-1/4 cubic feet and weighs less than 60 pounds. The module is designed for use in various NASA ground stations to replace larger, more complex cryogenic units which require considerably more maintenance because of the cryogenic refrigeration system employed. The amplifier can be located up to 15 feet from the power supply unit. Optimum performance was achieved through the use of high-quality unpackaged (chip) varactors in the amplifier design.
The engineering development of a solid state transmitter amplifier operating in the 20 GHz frequency band using GaAs field effect transistors (FETs) was detailed. The major efforts include GaAs FET device development, single-ended amplifier stage, balanced amplifier stage, cascaded stage and radial combiner designs, and amplifier integration and test. A multistage GaAs FET amplifier capable of 8.2 W CW output over the 17.9 to 19.1 GHz frequency band was developed. The GaAs FET devices developed represent state of the art FET power device technology. Further device improvements are necessary to increase the bandwidth to 2.5 GHz, improve dc-to-RF efficiency, and increase power capability at the device level. Higher power devices will simplify the amplifier combining scheme, reducing the size and weight of the overall amplifier.
This report discusses the performance of silicon germanium, wideband gain amplifiers under extreme temperatures. The investigated devices include Texas Instruments THS4304-SP and THS4302 amplifiers. Both chips are manufactured using the BiCom3 process based on silicon germanium technology along with silicon-on-insulator (SOI) buried oxide layers. The THS4304-SP device was chosen because it is a Class V radiation-tolerant (150 kRad, TID silicon), voltage-feedback operational amplifier designed for use in high-speed analog signal applications and is very desirable for NASA missions. It operates with a single 5 V power supply [1]. It comes in a 10-pin ceramic flatpack package, and it provides balanced inputs, low offset voltage and offset current, and high common mode rejection ratio. The fixed-gain THS4302 chip, which comes in a 16-pin leadless package, offers high bandwidth, high slew rate, low noise, and low distortion [2]. Such features have made the amplifier useful in a number of applications such as wideband signal processing, wireless transceivers, intermediate frequency (IF) amplifier, analog-to-digital converter (ADC) preamplifier, digital-to-analog converter (DAC) output buffer, measurement instrumentation, and medical and industrial imaging.
The engineering development of a solid state transmitter amplifier operating in the 20 GHz frequency band. The development effort involved a variety of disciplines including IMPATT device development, circulator design, simple and multiple diode circuits designs, and amplifier integration and test.
The engineering development of a solid-state transmitter amplifier operating in the 20-GHz frequency range is described. This effort involved a multitude of disciplines including IMPATT device development, circulator design, multiple-diode circuit design, and amplifier integration and test. The objective was to develop a transmitter amplifier demonstrating the feasibility of providing an efficient, reliable, lightweight solid-state transmitter to be flown on a 30 to 20 GHz communication demonstration satellite. The work was done under contract from NASA/Lewis Research Center for a period of three years. The result was the development of a GaAs IMPACT diode amplifier capable of an 11-W CW output power and a 2-dB bandwidth of 300 MHz. GaAs IMPATT diodes incorporating diamond heatsink and double-Read doping profile capable of 5.3-W CW oscillator output power and 15.5% efficiency were developed. Up to 19% efficiency was also observed for an output power level of 4.4 W. High performance circulators with a 0.2 dB inserting loss and bandwidth of 5 GHz have also been developed. These represent a significant advance in both device and power combiner circuit technologies in K-band frequencies.
A blanker system that may be used with audio noise limiters or automatic noise limiters was described. The system employs a pair of silicon diodes and two RC filters connected across the feedback impedance of an operational amplifier so as to counteract impulse noise interference caused by local spherics activity or 60 Hz harmonics radiated from ac motor control systems. The following information is given: circuit diagram and description, operating details, evaluation, discussion of other noise blanking methods.
Miniature amplifier for bioelectronic instrumentation consumes only about 100 mW and has frequency response flat to within 0.5 dB from 0.14 to 450 Hz. Device consists of five thin film substrates, which contain eight operational amplifiers and seven field-effect transistor dice.
Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.
Planetary exploration missions and deep space probes require electrical power management and control systems that can operate efficiently and reliably in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units to maintain the surrounding temperature of the onboard electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures would not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures. Thereby, such electronics would reduce system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results because semiconductor and dielectric materials have better behavior and tolerance in their electrical and thermal properties at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center is focusing on the research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and in deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial off-the-shelf as well as developed components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, dc-dc converters, operational amplifiers, and oscillators are also being investigated for potential use in low-temperature applications. For example, the output response of an advanced oscillator at room temperature and at -190 C is shown. Most oscillators can operate at temperatures down to only -55 C. It can be seen that, for this oscillator, the low temperature of -196 C changed the leading and trailing edges of the oscillator pulses by producing overshoot. The research and development efforts performed under the Low Temperature Electronics Program at Glenn are being carried out through collaboration with other Government agencies, industrial and aerospace companies, and academia. The program supports missions as well as technology development efforts at NASA's Goddard Space Flight Center and Langley Research Center, and the Jet Propulsion Laboratory.
In support of two infrared astronomy space projects, the IRAS satellite and the IRT on Spacelab 2, low-background tests were carried out on the performance and characterization of Si:Ga, Si:As, Si:Sb and Ge:Ga photoconductive detectors. These test results represent a useful appraisal of this family of detectors when operated at 1.8-4.2 K and at background power levels of 10 to the -14th to 10 to the -13th W. In addition to detector performance data, results are also presented on cryogenically cooled MOSFET amplifiers operated in the source follower and in the balanced-dc-TIA configurations.
The analysis and prototype results of a dual-amplifier circuit for measuring blade-tip clearance in turbine engines are presented. The capacitance between the blade tip and mounted capacitance electrode within a guard ring of a probe forms one of the feedback elements of an operational amplifier (op amp). The differential equation governing the circuit taking into consideration the nonideal features of the op amp was formulated and solved for two types of inputs (ramp and dc) that are of interest for the application. Under certain time-dependent constraints, it is shown that (1) with a ramp input the circuit has an output voltage proportional to the static tip clearance capacitance, and (2) with a dc input, the output is proportional to the derivative of the clearance capacitance, and subsequent integration recovers the dynamic capacitance. The technique accommodates long cable lengths and environmentally induced changes in cable and probe parameters. System implementation for both static and dynamic measurements having the same high sensitivity is also presented.
A completely general active RC network synthesis technique using a grounded gyrator and a summing amplifier is described. The technique overcomes serious limitations of previous RC-gyrator realizations and offers advantages o ver other general active RC synthesis methods. The technique is well suited for construction using thin-film RC networks and integrated circuit operational amplifiers, and provides a configuration which is quite insensitive to element variations.
A broad-area AlGaAs amplifier operating CW has delivered 425 mW of total power with 342 mW in a single lobe diverging at 1.02 times the diffraction limit (FWHM 0.483 deg, 87.4-micron actual aperture) for a master oscillator input power of 70 mW. The spatial coherence of the amplifier output is 0.97, and the mutual spatial coherence between the oscillator and the amplifier is 0.96.
Comparator continuously and automatically adjusts noise immunity period. High-gain amplifier used in conjunction with multivibrator 4 to provide clear pulse to multivibrator 1 at first negative-going zero crossing of input signal. Once multivibrator 1 cleared, output goes to zero volts and not retriggered until next time positive input exceeds reference level. Since input signal noise at zero crossing does not exceed reference level, no effect on multivibrator 1 operation. Circuit fabricated using standard solid-state operational amplifiers, multivibrators, OR gates, and passive elements.
A waveguide structure for combining the outputs of four amplifiers operating at 35 GHz (Ka band) is based on a similar prior structure used in the X band. The structure is designed to function with low combining loss and low total reflected power at a center frequency of 35 GHz with a 160 MHz bandwidth. The structure (see figure) comprises mainly a junction of five rectangular waveguides in a radial waveguide. The outputs of the four amplifiers can be coupled in through any four of the five waveguide ports. Provided that these four signals are properly phased, they combine and come out through the fifth waveguide port.
This work presents a measurement system to characterize the pulsed response of high-power GaN amplifiers for use in space-based SAR platforms that require very strict amplitude and phase stability. The measurement system is able to record and analyze data on three different time scales: fast, slow, and long, which allows for greater detail of the mechanisms that impact amplitude and phase stability. The system is fully automated through MATLAB, which offers both instrument control capability and in-situ data processing. To validate this system, a high-power GaN HEMT amplifier operated in saturation was characterized. The fast time results show that variations to the amplitude and phase are correlated to DC supply transients, while long time characteristics are correlated to temperature changes.