SEARCH · Engineering Papers

Results for “Neuromorphic computing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6

All sources NASA NTRS DOE OSTI

DOE OSTI2023

Fluid learning: Mimicking brain computing with neuromorphic nanofluidic devices

Relentlessly rising energy demands in computing call for rethinking hardware paradigms with energy efficiency in mind. Nature’s example—the brain—raises the question: How can these natural computers achieve remarkable feats with minimal energy compared to supercomputers? Neuromorphic computing mimics the brain’s principles, but current neuromorphic concepts using electronic components face scalability and their own power consumption challenges. A potentially revolutionary approach is emerging: computing with ion transport in water through nanochannels. This field offers energy-efficient possibilities by imitating brain-like information processing with different types of ions as carriers. Finally, the goal is to converge advanced nanoscale architectures with brain-inspired efficiency, heralding a new era of computing.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2025

Neuromorphic ionic computing in droplet interface synapses

Ionic devices with memory capabilities can emulate neural functionality, enabling neuromorphic computing and biomedical applications. In this study, we report an ionic spiking synapse based on aqueous droplet interface bilayer assembly. Under stepwise triangular voltages, the device displays coupled memcapacitive-memristive behavior, showing noncrossing pinched hysteretic I-V loops. This hysteretic ion dynamics can be regulated by modifying bilayer components, reconstituting protein channels, or adjusting droplet assembly configuration. Droplet interface synapses (DIS) exhibit fundamental neuromorphic behaviors such as paired-pulse facilitation/depression, spike rate–dependent plasticity, Hebbian learning, and short-term associative learning under classical conditioning. We also used reservoir computing with DIS to implement two learning algorithms: a classification algorithm that recognizes handwritten digits and a reinforcement learning algorithm that learns to play a board game of tic-tac-toe.

Li, Zhongwu [Lawrence Livermore National Laborator↗

DOE OSTI2024

Neuromorphic overparameterisation and few-shot learning in multilayer physical neural networks

Abstract Physical neuromorphic computing, exploiting the complex dynamics of physical systems, has seen rapid advancements in sophistication and performance. Physical reservoir computing, a subset of neuromorphic computing, faces limitations due to its reliance on single systems. This constrains output dimensionality and dynamic range, limiting performance to a narrow range of tasks. Here, we engineer a suite of nanomagnetic array physical reservoirs and interconnect them in parallel and series to create a multilayer neural network architecture. The output of one reservoir is recorded, scaled and virtually fed as input to the next reservoir. This networked approach increases output dimensionality, internal dynamics and computational performance. We demonstrate that a physical neuromorphic system can achieve an overparameterised state, facilitating meta-learning on small training sets and yielding strong performance across a wide range of tasks. Our approach’s efficacy is further demonstrated through few-shot learning, where the system rapidly adapts to new tasks.

Science & Technology - Other Topics↗

DOE OSTI2022

ECRAM Materials, Devices, Circuits and Architectures: A Perspective

Abstract Non‐von‐Neumann computing using neuromorphic systems based on two‐terminal resistive nonvolatile memory elements has emerged as a promising approach, but its full potential has not been realized due to the lack of materials and devices with the appropriate attributes. Unlike memristors, which require large write currents to drive phase transformations or filament growth, electrochemical random access memory (ECRAM) decouples the “write” and “read” operations using a “gate” electrode to tune the conductance state through charge‐transfer reactions, and every electron transferred through the external circuit in ECRAM corresponds to the migration of ≈1 ion used to store analogue information. Like static dopants in traditional semiconductors, electrochemically inserted ions modulate the conductivity by locally perturbing a host's electronic structure; however, ECRAM does so in a dynamic and reversible manner. The resulting change in conductance can span orders of magnitude, from gradual increments needed for analog elements, to large, abrupt changes for dynamically reconfigurable adaptive architectures. In this in‐depth perspective, the history of ECRAM, the recent progress in devices spanning organic, inorganic, and 2D materials, circuits, architectures, the rich portfolio of challenging, fundamental questions, and how ECRAM can be harnessed to realize a new paradigm for low‐power neuromorphic computing are discussed.

Talin, A. Alec↗

DOE OSTI2020

Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching

Digital computing is nearing its physical limits as computing needs and energy consumption rapidly increase. Analogue-memory-based neuromorphic computing can be orders of magnitude more energy efficient at data-intensive tasks like deep neural networks, but has been limited by the inaccurate and unpredictable switching of analogue resistive memory. Filamentary resistive random access memory (RRAM) suffers from stochastic switching due to the random kinetic motion of discrete defects in the nanometer-sized filament. Here, this stochasticity is overcome by incorporating a solid electrolyte interlayer, in this case, yttria-stabilized zirconia (YSZ), toward eliminating filaments. Filament-free, bulk-RRAM cells instead store analogue states using the bulk point defect concentration, yielding predictable switching because the statistical ensemble behavior of oxygen vacancy defects is deterministic even when individual defects are stochastic. Both experiments and modeling show bulk-RRAM devices using TiO2-X switching layers and YSZ electrolytes yield deterministic and linear analogue switching for efficient inference and training. Bulk-RRAM solves many outstanding issues with memristor unpredictability that have inhibited commercialization, and can, therefore, enable unprecedented new applications for energy-efficient neuromorphic computing. Beyond RRAM, this work shows how harnessing bulk point defects in ionic materials can be used to engineer deterministic nanoelectronic materials and devices.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Controlled Formation of Conduction Channels in Memristive Devices Observed by X–ray Multimodal Imaging

Neuromorphic computing provides a means for achieving faster and more energy efficient computations than conventional digital computers for artificial intelligence (AI). However, its current accuracy is generally less than the dominant software-based AI. The key to improving accuracy is to reduce the intrinsic randomness of memristive devices, emulating synapses in the brain for neuromorphic computing. Here using a planar device as a model system, the controlled formation of conduction channels is achieved with high oxygen vacancy concentrations through the design of sharp protrusions in the electrode gap, as observed by X-ray multimodal imaging of both oxygen stoichiometry and crystallinity. Classical molecular dynamics simulations confirm that the controlled formation of conduction channels arises from confinement of the electric field, yielding a reproducible spatial distribution of oxygen vacancies across switching cycles. Furthermore, this work demonstrates an effective route to control the otherwise random electroforming process by electrode design, facilitating the development of more accurate memristive devices for neuromorphic computing.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Intrinsically stretchable neuromorphic devices for on-body processing of health data with artificial intelligence

For leveraging wearable technologies to advance precision medicine, personalized and learning-based analysis of continuously acquired health data is indispensable, for which neuromorphic computing could provide the most efficient implementation of artificial intelligence (AI) data processing. For realizing on-body neuromorphic computing, skin-like stretchability is required, but yet to be combined with the suite of desired neuromorphic metrics, including linear, symmetric weight update, and sufficient state retention, for achieving high computing efficiency. Here, we report an intrinsically stretchable neuromorphic device based on an electrochemical transistor, which provides a large number (>800) of states, linear/symmetric weight update, excellent switching endurance (>100 million), good state retention (>10 4 s), together with high stretchability of 100% strain. Further integration into a prototype array successfully realized the implementation of vector-matrix multiplication even at 100% strain. Finally, we demonstrate the feasibility of implementing AI-based classification of health signals (as exemplified by electrocardiograms) with a high accuracy that is minimally influenced by the stretched state of the neuromorphic hardware. Finally, this work breaks the ground for combining AI data analysis into skin-like wearable electronics for achieving human-integrated/mimetic intelligent systems.

60 APPLIED LIFE SCIENCES↗

DOE OSTI2023

Designing polar textures with ultrafast neuromorphic features from atomistic simulations

This review summarizes recent works, all using a specific atomistic approach, that predict and explain the occurrence of key features for neuromorphic computing in three archetypical dipolar materials, when they are subject to THz excitations. The main ideas behind such atomistic approach are provided, and illustration of model relaxor ferroelectrics, antiferroelectrics, and normal ferroelectrics are given, highlighting the important potential of polar materials as candidates for neuromorphic computing. Some peculiar emphases are made in this Review, such as the connection between neuromorphic features and percolation theory, local minima in energy path, topological transitions and/or anharmonic oscillator model, depending on the material under investigation. By considering three different and main polar material families, this work provides a complete and innovative toolbox for designing polar-based neuromorphic systems.

THz pulses↗

DOE OSTI2024

Characterization of ECRAM materials and devices

As the limits of Moore’s Law approaches, new computing paradigms are developing to breakthrough this bottleneck. One such computer architecture is neuromorphic computing, which models the brain. Electrochemical random-access memory (ECRAM) is a low power and energy efficient memory due to characteristics, such as in-memory compute, ion modulation of the channel conductance, and computation distribution with large scale array integration.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2025

NeuroCoreX: Brain-Inspired Computing from Code to Circuit

NeuroCoreX is an open-source codebase that enables the implementation of brain-inspired, energy-efficient neuromorphic computing models on FPGA hardware. Designed to support real-time learning, all-to-all neural connectivity, and flexible network architectures, NeuroCoreX offers a hands-on, accessible platform for exploring biologically inspired models of neural computation. It empowers researchers, students, and developers to implement and experiment with adaptive systems—bringing the power of neuromorphic computing to a broader community through a low-cost, scalable, and reconfigurable framework.

Gautam, Ashish [Oak Ridge National Laboratory (ORN↗

DOE OSTI2022

Virtual Neuron: A Neuromorphic Approach for Encoding Numbers

Neuromorphic computers perform computations by emulating the human brain and are expected to be indispensable for energy-efficient computing in the future. They are primarily used in spiking neural network-based machine learning applications. However, neuromorphic computers are unable to preprocess data for these applications. Currently, data is preprocessed on a CPU or a GPU-this incurs a significant cost of transferring data from the CPU/GPU to the neuromorphic processor and vice versa. This cost can be avoided if preprocessing is done on the neuromorphic processor. To efficiently preprocess data on a neuromorphic processor, we first need an efficient mechanism for encoding data that can lend itself to all general-purpose preprocessing operations. Current encoding approaches have limited applicability and may not be suitable for all preprocessing operations. In this paper, we present the virtual neuron as a mechanism for encoding integers and rational numbers on neuromorphic processors. We evaluate the performance of the virtual neuron on physical and simulated neuromorphic hardware and show that it can perform an addition operation using 23 nJ of energy on average using a mixed-signal, memristor-based neuromorphic processor. The virtual neuron encoding approach is the first step in preprocessing data on a neuromorphic processor.

Date, Prasanna↗

DOE OSTI2023

An FPGA-Based Neuromorphic Processor with All-to-All Connectivity

Neuromorphic computing is a promising paradigm for future energy-efficient computing. At present, however, it is in its nascent stages—most hardware implementations are research-grade, commercial products are not available, and the software tools are not production-ready. The lack of hardware and software tools makes neuromorphic computing inaccessible to researchers around the globe. To this extent, we intend to build a low-cost, open-source, FPGA-based digital neuromorphic processor that can be used by researchers worldwide. In this paper, we present a preliminary implementation of the processor on a Xilinx Artix-7 FPGA using SystemVerilog. Our implementation supports the integrate-and-fire neuron with two parameters each for neurons and synapses. It also features all-to-all connectivity among neurons on the hardware. We test our implementation on four cases: bars and stripes datasets, shortest path algorithm, logic gates, and 8-3 encoder. We also perform a scalability study to understand the resource utilization of the FPGA as the number of all-to-all connected neurons increases. With our implementation, the Artix- 7 supports 65 neurons with all-to-all connectivity. Moreover, all the test cases mentioned above achieve 100% accuracy.

Maheshwari, Disha↗

DOE OSTI2023

Mean Field Theory of Self‐Organizing Memristive Connectomes

Abstract Biological neuronal networks are characterized by nonlinear interactions and complex connectivity. Given the growing impetus to build neuromorphic computers, understanding physical devices that exhibit structures and functionalities similar to biological neural networks is an important step toward this goal. Self‐organizing circuits of nanodevices are at the forefront of the research in neuromorphic computing, as their behavior mimics synaptic plasticity features of biological neuronal circuits. However, an effective theory to describe their behavior is lacking. This study provides for the first time an effective mean field theory for the emergent voltage‐induced polymorphism of circuits of a nanowire connectome, showing that the behavior of these circuits can be explained by a low‐dimensional dynamical equation. The equation can be derived from the microscopic dynamics of a single memristive junction in analytical form. The effective model is tested on experiments of nanowire networks and show that it fits both the potentiation and depression of these synapse‐mimicking circuits. It is shown that this theory applies beyond the case of nanowire networks by formulating a general mean‐field theory of conductance transitions in self‐organizing memristive connectomes.

Caravelli, Francesco↗

DOE OSTI2024

Simultaneous Solid Electrolyte Deposition and Cathode Lithiation for Thin Film Batteries and Lithium Iontronic Devices

Here we show that the deposition of the solid-state electrolyte LiPON onto films of V 2 O 5 leads to their uniform lithiation of up to 2.2 Li per V 2 O 5 , without affecting the Li concentration in the LiPON and its ionic conductivity. Our results indicate that Li incorporation occurs during LiPON deposition, in contrast to earlier mechanisms proposed to explain postdeposition Li transfer between LiPON and LiCoO 2 . We use our discovery to demonstrate symmetric thin film batteries with a capacity of >270 mAh/g, at a rate of 20C, and 1600 cycles with only 8.4% loss in capacity. We also show how autolithiation can simplify fabrication of Li iontronic transistors attractive for emerging neuromorphic computing applications. Our discovery that LiPON deposition results in autolithiation of the underlying insertion oxide has the potential to substantially simplify and enhance the fabrication process for thin film solid state Li ion batteries and emerging lithium iontronic neuromorphic computing devices.

25 ENERGY STORAGE↗

DOE OSTI2021

Spatiotemporal characterization of the field-induced insulator-to-metal transition

Watching a metal filament grow Resistive switching is a process in which the electrical resistance of a sample changes abruptly in response to a voltage pulse, often by orders of magnitude. This process is at the heart of many neuromorphic computing approaches but visualizing it in both space and time is tricky. del Valle et al . monitored the resistive switching in three different vanadium oxide compounds by measuring time- and space-resolved optical reflectivity (see the Perspective by Hilgenkamp and Gao). A characteristic conducting filament was quickly nucleated on the inhomogeneities in the sample and then propagated due to Joule heating. —JS

Science & Technology - Other Topics↗

DOE OSTI2024

Proton Conducting Neuromorphic Materials and Devices

Neuromorphic computing and artificial intelligence hardware generally aims to emulate features found in biological neural circuit components and to enable the development of energy-efficient machines. In the biological brain, ionic currents and temporal concentration gradients control information flow and storage. It is therefore of interest to examine materials and devices for neuromorphic computing wherein ionic and electronic currents can propagate. Protons being mobile under an external electric field offers a compelling avenue for facilitating biological functionalities in artificial synapses and neurons. In this review, we first highlight the interesting biological analog of protons as neurotransmitters in various animals. We then discuss the experimental approaches and mechanisms of proton doping in various classes of inorganic and organic proton-conducting materials for the advancement of neuromorphic architectures. Since hydrogen is among the lightest of elements, characterization in a solid matrix requires advanced techniques. We review powerful synchrotron-based spectroscopic techniques for characterizing hydrogen doping in various materials as well as complementary scattering techniques to detect hydrogen. First-principles calculations are then discussed as they help provide an understanding of proton migration and electronic structure modification. Outstanding scientific challenges to further our understanding of proton doping and its use in emerging neuromorphic electronics are pointed out.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Hyperparameter Optimization and Feature Inclusion in Graph Neural Networks for Spiking Implementation

Graph convolutional networks leverage both graph structures and features on nodes and edges for improved learning performance in comparison with classical machine learning approaches. Spiking neuromorphic computers natively implement network-like computation and have been shown to be successful at implementing graph learning without features. Incorporating graph features brings the challenge of efficient feature representation and balancing the contribution of topology and features in learning. In this work, we present our design of a simulated network of spiking neurons to perform semi-supervised learning on graph data using both the graph structure and the node features. We explore various design choices, present preliminary results, and discuss the opportunities for using neuromorphic computers for this task in the future.

Cong, Guojing↗

DOE OSTI2025

Composite Behavior of Nanopore Array Large Memristors

Synthetic nanopores were recently demonstrated with memristive and nonlinear voltage-current behaviors, akin to ion channels in a cell membrane. Such ionic devices are considered a promising candidate for the development of brain-inspired neuromorphic computing techniques. In this work, we show the composite behavior of nanopore-array large memristors, formed with different membrane materials, pore sizes, electrolytes, and device arrangements. Anodic aluminum oxide (AAO) membranes with 5 nm and 20 nm diameter pores and track-etched polycarbonate (PCTE) membranes with 10 nm diameter pores are tested and shown to demonstrate memristive and nonlinear behaviors with approximately 107–1010 pores in parallel when electrolyte concentration across the membranes is asymmetric. Ion diffusion through the large number of channels induces time-dependent electrolyte asymmetry that drives the system through different memristive states. The behaviors of series composite memristors with different configurations are also presented. In addition to helping understand fluidic devices and circuits for neuromorphic computing, the results also shed light on the development of field-assisted ion-selection-membrane filtration techniques as well as the investigations of large neurons and giant synapses. Further work is needed to de-embed parasitic components of the measurement setup to obtain intrinsic large memristor properties.

Chemistry↗