Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor
Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa 1-x N). Multidimensional thermal characterization of an Al 0.30 Ga 0.70 N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al 0.30 Ga 0.70 N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of Al x Ga 1-x N may open the door for extreme temperature applications.