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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Testing device stretches elastic materials biaxially over large deformation ranges and varies strain ratios in two perpendicular directions. The device is used in conjunction with a tensile testing machine, which holds the specimen and permits control over the direction and magnitude of the stresses applied.
Vitreous material builds up as series of solidified layers on inside walls of sealed quartz ampoule containing molten constituents of material, and forms well defined shapes to close dimensional tolerances. Ampoules are made of material which does not react with melt and has lower thermal expansion coefficient than solidified layer.
Thermoelectric materials based on tetrahedrite structures for thermoelectric devices and methods for producing thermoelectric materials and devices are disclosed. The thermoelectric device has a pair of conductors and a p-type thermoelectric material disposed between the conductors. The thermoelectric material is at least partially formed of a hot pressed high energy milled tetrahedrite formed of tetrahedrite ore and pure elements to form a tetrahedrite powder of Cu12-xMxSb4S13 disposed between the conductors, where M is at least one of Zn and Fe.
Thermoelectric materials based on tetrahedrite structures for thermoelectric devices and methods for producing thermoelectric materials and devices are disclosed.
The application of advanced electric power system technology to an all electric airplane results in an estimated reduction of the total takeoff gross weight of over 23,000 pounds for a large airplane. This will result in a 5 to 10 percent reduction in direct operating costs (DOC). Critical to this savings is the basic electrical power system component technology. These advanced electrical power components will provide a solid foundation for the materials, devices, circuits, and subsystems needed to satisfy the unique requirements of advanced all electric aircraft power systems. The program for the development of advanced electrical power component technology is described. The program is divided into five generic areas: semiconductor devices (transistors, thyristors, and diodes); conductors (materials and transmission lines); dielectrics; magnetic devices; and load management devices. Examples of progress in each of the five areas are discussed. Bipolar power transistors up to 1000 V at 100 A with a gain of 10 and a 0.5 microsec rise and fall time are presented. A class of semiconductor devices with a possibility of switching up to 100 kV is described. Solid state power controllers for load management at 120 to 1000 V and power levels to 25 kW were developed along with a 25 kW, 20 kHz transformer weighing only 3.2 kg.
The application of advanced electric power system technology to an all electric airplane results in an estimated reduction of the total takeoff gross weight of over 23,000 pounds for a large airplane. This will result in a 5 to 10 percent reduction in direct operating costs (DOC). Critical to this savings is the basic electrical power system component technology. These advanced electrical power components will provide a solid foundation for the materials, devices, circuits, and subsystems needed to satisfy the unique requirements of advanced all electric aircraft power systems. The program for the development of advanced electrical power component technology is described. The program is divided into five generic areas: semiconductor devices (transistors, thyristors, and diodes); conductors (materials and transmission lines); dielectrics; magnetic devices; and load management devices. Examples of progress in each of the five areas are discussed. Bipolar power transistors up to 1000 V at 100 A with a gain of 10 and a 0.5 microsec rise and fall time are presented. A class of semiconductor devices with a possibility of switching up to 100 kV is described. Solid state power controllers for load management at 120 to 1000 V and power levels to 25 kW were developed along with a 25 kW, 20 kHz transformer weighing only 3.2 kg. Previously announced in STAR as N83-24764
Methods, materials systems, and devices for inhibiting the infiltration and penetration of molten salts into solid materials, including porous materials at temperatures above the solidus temperature of the molten salt. The methods, materials systems, and devices utilize a non-wetted solid that is introduced into pores having entrances at an exterior surface of a porous solid material adapted to contact the molten salt.
The efficient utilization of materials is critical to certain device applications such as silicon for photovoltaics or diodes and gallium-gadolinium-garnet for memories. A variety of slicing techniques has been investigated to minimize wafer thickness and wafer kerf. This paper presents the results of analyses of ID wafering of rotated ingots based on predicted fracture behavior of the wafer as a result of forces during wafering and the properties of the device material. The analytical model indicated that the minimum wafer thickness is controlled by the depth of surface damage and the applied cantilever force. Both of these factors should be minimized. For silicon, a minimum thickness was found to be approximately 200 x 10 - 6th m for conventional sizes of rotated ingot wafering. Fractures through the thickness of the wafer rather than through the center supporting column were found to limit the minimum wafer thickness. The model suggested that the use of a vacuum chuck on the wafer surface to enhance cleavage fracture of the center supporting core and, with silicon, by using 111-line-type ingots could have potential for reducing minimum wafer thickness.
This task has been expanded since the last 25th Project Integration Meeting (PIM) to include process research in addition to device research. The objective of this task is to assist the Flat-plate Solar Array (FSA) Project in meeting its near- and long-term goals by identifying and implementing research in the areas of device physics, device structures, measurement techniques, material-device interactions, and cell processing. The research efforts of this task are described and reflect the deversity of device research being conducted. All of the contracts being reported are either completed or near completion and culminate the device research efforts of the FSA Project. Optimazation methods and silicon solar cell numerical models, carrier transport and recombination parameters in heavily doped silicon, development and analysis of silicon solar cells of near 20% efficiency, and SiN sub x passivation of silicon surfaces are discussed.
Comprehensive survey is given of the thermal aspects of phase change material devices. Fundamental mechanisms of heat transfer within the phase change device are discussed. Performance in zero-g and one-g fields are examined as it relates to such a device. Computer models for phase change materials, with metal fillers, undergoing conductive and convective processes are detailed. Using these models, extensive parametric data are presented for a hypothetical configuration with a rectangular phase change housing, using straight fins as the filler, and paraffin as the phase change material. These data are generated over a range of realistic sizes, material properties, and thermal boundary conditions. A number of illustrative examples are given to demonstrate use of the parametric data. Also, a complete listing of phase change material property data are reproduced herein as an aid to the reader.
Metal-Organic Frameworks have shown great promise for memristive synaptic devices because of their adaptable electrical properties and inherent porosity, which help in efficient ion transport and storage of functional molecules. However, the limited conductivity and sensitivity to moisture associated with most MOF materials hinder their use in electronic applications. In this study, MOFs derived from metabolites have been synthesized, using ZnO as a self-sacrificial metallic source to grow Zeolitic Imidazolate Framework-8 (ZIF-8), forming ZnO@ZIF-8 heteronanostructures for neuromorphic applications. These hybrids ZnO@ZIF-8 act as promising candidates for advanced electronic applications. Through systematic investigations, including a comparison of ZnO@ZIF-8 bilayer devices with ZnO single-layer counterparts, a significant discovery emerged. The bilayer synaptic devices outperformed their single layer counterparts in electrical characteristics, as evidenced by Current-Voltage curve analysis and Long-Term Potentiation/Long Term Depression (LTP/LTD) measurements. Additionally, the ZnO layer thickness (10, 30, 50 nm) has been emphasized and the effects of annealing at 300°C in a vacuum were carefully studied for Neuromorphic Synaptic Devices. Remarkably, the 10 nm ZnO layer exhibited the lowest set voltage and a consistent On/Off ratio. This work marks a significant advancement in understanding bilayer synaptic devices, highlighting the crucial role of ZIF-8 in shaping the future of neuromorphic systems
Solution-processable dielectric materials are provided, along with precursor compositions and processes for preparing the same. Composites and electronic devices including the dielectric materials also are provided.
Thermoelectric materials, which can convert waste heat into electricity or act as solid‐state Peltier coolers, are emerging as key technologies to address global energy shortages and environmental sustainability. However, discovering materials with high thermoelectric conversion efficiency is a complex and slow process. The emerging field of high‐throughput material discovery demonstrates its potential to accelerate the development of new thermoelectric materials combining high efficiency and low cost. The synergistic integration of high‐throughput material processing and characterization techniques with machine learning algorithms can form an efficient closed‐loop process to generate and analyze broad datasets to discover new thermoelectric materials with unprecedented performances. Meanwhile, the recent development of advanced manufacturing methods provides exciting opportunities to realize scalable, low‐cost, and energy‐efficient fabrication of thermoelectric devices. This review provides an overview of recent advances in discovering thermoelectric materials using high‐throughput methods, including processing, characterization, and screening. Advanced manufacturing methods of thermoelectric devices are also introduced to realize the broad impacts of thermoelectric materials in power generation and solid‐state cooling. In the end, this article also discusses the future research prospects and directions.
Knowledge of how heat flows anisotropically in van der Waals (vdW) materials is crucial for thermal management of emerging 2D materials devices and design of novel anisotropic thermoelectric materials. Despite the importance, anisotropic heat transport in vdW materials is yet to be systematically studied and is often presumably attributed to anisotropic speeds of sound in vdW materials due to soft interlayer bonding relative to covalent in-plane networks of atoms. In this work, we investigate the origins of the anisotropic heat transport in vdW materials, through time-domain thermoreflectance (TDTR) measurements and first-principles calculations of anisotropic thermal conductivity of three different phases of MoTe 2 . MoTe 2 is ideal for the study due to its weak anisotropy in the speeds of sound. We find that even when the speeds of sound are roughly isotropic, the measured thermal conductivity of MoTe 2 along the c-axis is 5–8 times lower than that along the in-plane axes. We derive meaningful characteristic heat capacity, phonon group velocity, and relaxation times from our first principles calculations for selected vdW materials (MoTe 2 , BP, h-BN, and MoS 2 ), to assess the contributions of these factors to the anisotropic heat transport. Interestingly, we find that the main contributor to the heat transport anisotropy in vdW materials is anisotropy in heat capacity of the dominant heat-carrying phonon modes in different directions, which originates from anisotropic optical phonon dispersion and disparity in the frequency of heat-carrying phonons in different directions. Further, the discrepancy in frequency of the heat-carrying phonons also leads to ~2 times larger average relaxation times in the cross-plane direction, and partially explains the apparent dependence of the anisotropic heat transport on the anisotropic speeds of sound. This work provides insight into understanding of the anisotropic heat transport in vdW materials.
Two factors which limit the complexity of GaAs MESFET VLSI circuits are considered. Power dissipation sets an upper complexity limit for a given logic circuit implementation and thermal design. Uniformity of device characteristics and the circuit configuration determines the electrical functional yield. Projection of VLSI complexity based on these factors indicates that logic chips of 15,000 gates are feasible with the most promising static circuits if a maximum power dissipation of 5 W per chip is assumed. While lower power per gate and therefore more gates per chip can be obtained by using a popular E/D FET circuit, yields are shown to be small when practical device parameter tolerances are applied. Further improvements in materials, devices, and circuits wil be needed to extend circuit complexity to the range currently dominated by silicon.
The steady-state linear device “Material Plasma Exposure eXperiment” (MPEX) is currently under construction at Oak Ridge National Laboratory with the goal of enabling Plasma-Material Interaction studies at future fusion reactor relevant plasma conditions. In this work, a newly in-house developed hybrid Particle-In-Cell code-PICOS++ is applied to understand the experimental results obtained from the prototype of MPEX referred to as the “Proto-MPEX” during its helicon-only and helicon with ion cyclotron resonance heating (ICRH) experiments. This study explains the physics of the experimentally observed plasma density-drop at the divertor target in Proto-MPEX device during ICRH. In contrast to previous work on ICRH in MPEX, this study demonstrates that the mirror force plays a central role in the Proto-MPEX plasma transport during ICRH, which has new features not previously explored. Force balance analyses reveal that the temperature anisotropy produced by ICRH leads to a significant increase in the mirror force downstream of the resonance where the magnetic field is diverging. This force accelerates ions toward the target and leads to a drop in plasma density to ensure conservation of particle flux. Simulations with ICRH where the magnetic field divergence downstream of the resonance has been removed, do not produce plasma acceleration nor density drop at the target despite efficient ion heating at the resonance. Moreover, simulation results demonstrate that for a given ICRH power, lowering the source rate produces ions with increased perpendicular energy which interact with the mirror force to produce higher plasma acceleration which increases the strength of the density-drop at the target. The strength of the density drop appears to reach an asymptotic limit at a certain threshold ICRH power. Simulations show that this threshold power increases with increasing particle source rate.
Controlling nanoscale tip‐induced material removal is crucial for achieving atomic‐level precision in tomographic sensing with atomic force microscopy (AFM). While advances have enabled volumetric probing of conductive features with nanometer accuracy in solid‐state devices, materials, and photovoltaics, limitations in spatial resolution and volumetric sensitivity persist. This work identifies and addresses in‐plane and vertical tip‐sample junction leakage as sources of parasitic contrast in tomographic AFM, hindering real‐space 3D reconstructions. Novel strategies are proposed to overcome these limitations. First, the contrast mechanisms analyzing nanosized conductive features are explored when confining current collection purely to in‐plane transport, thus allowing reconstruction with a reduction in the overestimation of the lateral dimensions. Furthermore, an adaptive tip‐sample biasing scheme is demonstrated for the mitigation of a class of artefacts induced by the high electric field inside the thin oxide when volumetrically reduced. This significantly enhances vertical sensitivity by approaching the intrinsic limits set by quantum tunneling processes, allowing detailed depth analysis in thin dielectrics. The effectiveness of these methods is showcased in tomographic reconstructions of conductive filaments in valence change memory, highlighting the potential for application in nanoelectronics devices and bulk materials and unlocking new limits for tomographic AFM.
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