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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Critical structural parameter determining magnetic phases in the F⁡e 2 ⁢M⁢o 3 ⁢O 8 altermagnet system

A systematic structural investigation of F⁡e 2 ⁢M⁢o 3⁢ O 8 as a function of pressure, temperature, and magnetic field reveals that the 𝑃⁢6 3 ⁢𝑚⁢𝑐 space group remains robust over a wide range of conditions. No changes in the long-range crystal structure are observed for pressures up to 10 GPa, temperatures between 11 K and 300 K, and magnetic fields up to 9 T. The magnetostructural response, quantified by Δ⁢𝑐/𝑐, is determined for magnetic fields applied transverse to the crystallographic 𝑐 axis, demonstrating strong magnetoelastic coupling. The well-known magnetic-field-induced transition is confirmed to be first order and isostructural, occurring between two distinct altermagnetic states. Importantly, this transition can also be accessed using magnetic fields applied within the 𝑎𝑏 plane. When expressed in terms of the 𝑐/𝑎 ratio, the structural evolution under pressure (0–10 GPa) maps continuously onto that observed across the full Zn substitution range in (F⁡e 1−𝑦⁢ Z⁢n 𝑦 )2 M⁢o 3 ⁢O 8 ⁢(0 ≤ 𝑦 ≤ 1), indicating a common underlying structural control parameter. Furthermore, these results demonstrate that the 𝑐-axis lattice parameter is the primary structural degree of freedom governing magnetic behavior under external tuning parameters. More broadly, they indicate that magnetic order in this family of complex oxides (𝐴 2 ⁢M⁢o 3 ⁢O 8 , 𝐴 = Co,Mn,Ni) can be systematically tuned via pressure. This tunability highlights these materials as promising platforms for controllable magnetic switching, particularly in thin films integrated with piezoelectric substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Half-Metal Spin Filter for Highly Polarized Emission from GaAs Photocathodes

GaAs-based photocathodes are one of the major sources of spin-polarized electrons and are crucial for the upcoming Electron-Ion collider experiments which includes study of proton spin and spin parity violation in the standard model. The theoretical polarization limit in unstrained GaAs photocathodes is 50 % but only 35 % is routinely achieved in experiments. Spin selective filtering allows to boost the spin polarization beyond the 50 % theoretical limit. In this work, first-principle electronic calculations using standard Density Functional Theory are performed to predict possible Heusler alloy half-metal candidates to be used as spin-filter. Simulations are also performed to investigate the half-metallicity as function of the magnetic spin direction. Several devices are experimentally fabricated using dedicated Molecular Beam Epitaxy growth system. We implemented Quantum Efficiency and Polarization testing of these half-metal/GaAs heterostructures using a dedicated Mott polarimeter system. Photoemission can also be seen on magnetically switching the spin-filter direction accompanied by a change in sign of the asymmetry which is a qualitative proof of the spin-filtering effect.

Poddar, S.↗
DOE OSTI2024

Frequency-independent optical spin injection in Weyl semimetals

We demonstrate that in Weyl semimetals, the momentum-space helical spin texture can couple to the chirality of the Weyl node to generate a frequency-independent optical spin injection. This frequency-independence is rooted in the topology of the Weyl node. Since the helicity and the chirality are always locked for Weyl nodes, the injected spin from a pair of Weyl nodes always add up, implying no symmetry requirements for Weyl semimetals. Finally, we show that such frequency-independent spin injection is robust against multiband corrections and lattice-regularization effect and capable of realizing all-optical magnetization switching in the THz regime.

Gao, Yang↗
DOE OSTI2023

IMS Rapid Response 2023-2 (RR 2023-RND-2): Magnetic order in layered bismuthide RhMnBi 3 (Final Report)

Microelectronics are technologies (mostly theoretical at this point) to create electronic circuits with components of atomic length scale. One of the key materials innovations enabling this technology is exfoliatable two-dimensional materials. These materials allow thin sheets of only a few atoms thick to be easily created in the laboratory. More and more of these materials are reported every year, but few have been characterized in detail. Thus a major goal in materials research in pursuit of microelectronic devices is characterizing newly discovered materials to evaluate their properties. The goal of this project was the measure and understand the magnetic order in a newly discovered van der Waals magnet RhMnBi 3 . Bulk property experiments indicated very complicated magnetic behavior, with multiple phase transitions between 2K and 300K (room temperature). This potentially indicated highly sensitive and tunable magnetism appropriate for single-layer magnetic switches and sensors.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Topological Surface and Bulk States in Dirac Semimetal Alpha-Sn Thin Films

Supported by this DOE grant, we made significant advancements in the study and application of topological surface states (TSS) in topological Dirac semimetal (TDS) α-Sn thin films. Our key findings include: (1) the successful growth of TDS α-Sn thin films via sputtering, an industry-friendly technique, on Si and InSb substrates, marking a breakthrough over previous molecular beam epitaxy methods, (2) the demonstration of enhanced damping in adjacent NiFe thin films due to the TSS of α-Sn, (3) the first observation of a strong bilinear magneto-electric resistance (BMER) effect in TDS materials at room temperature, with responses surpassing previous results, (4) the identification of quantum oscillations in α-Sn thin films associated with the TSS, revealing critical quantum transport characteristics such as Berry phase and quantum mobility, (5) the first experimental observation of negative magnetoresistance in α-Sn, and (6) the demonstration of spinorbit torque-driven, field-free magnetization switching in an α-Sn/Ag/CoFeB trilayer, achieving efficiency levels higher than conventional heavy-metal-based structures, highlighting the essential role of TSS in enabling the switching process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1984

Applications of excimer lasers for atmospheric species measurements

Excimer lasers are proven sources of high pulse energy and high average power coherent radiation at several wavelength regions throughout the ultraviolet spectrum. If designed properly, excimer lasers can be operated with both low divergence and narrow spectral bandwidth, and using an oscillator - injection-locked amplifier configuration they can be tuned over a 10 to 20 A bandwidth without appreciable loss in energy. Additional wavelength coverage from excimer lasers can be obtained by stimulated Raman scattering. With the development of magnetic switching for the high voltage, high power switches, the electric discharge excimer laser can also be operated reliably for extended periods of time at high pulse rates. All these features make excimer lasers ideal sources of ultraviolet radiation for a variety of remote and in-situ atmospheric species measurements.

Laudenslager, J. B.↗
NASA NTRS1984

Single longitudinal mode operation of an XeCl laser

Single longitudinal mode output from a directly tuned, long pulse, magnetically switched XeCl laser is reported for the first time. Mode control was achieved using spatial apertures and intracavity etalons. The narrow bandwidth laser output was diffraction limited with an optical pulse width of 30 ns, which would yield a transform limited bandwidth of 30 MHz.

Pacala, T. J.↗
NASA NTRS1989

Free electron lasers driven by linear induction accelerators: High power radiation sources

The technology of Free Electron Lasers (FELs) and linear induction accelerators (LIAs) is addressed by outlining the following topics: fundamentals of FELs; basic concepts of linear induction accelerators; the Electron Laser Facility (a microwave FEL); PALADIN (an infrared FEL); magnetic switching; IMP; and future directions (relativistic klystrons). This presentation is represented by viewgraphs only.

Orzechowski, T. J.↗
DOE OSTI2021

Integrated transmission electron microscope

An integrated transmission electron microscope comprising multiple electron sources for tuned beams of ultrafast, scanning probe, and parallel illumination in varied beam energies can be alternated within sub-microseconds onto a sample with dynamic ‘transient state’ processes to acquire atomic-scale structural/chemical data with site specificity. The various electron sources and condenser optics enable high-resolution imaging, high-temporal resolution imaging, and chemical imaging, using fast-switching magnets to direct the different electron beams onto a single maneuverable objective pole piece where the sample resides. Such multimodal in situ characterization tools housed in a single microscope have the potential to revolutionize materials science.

Jungjohann, Katherine L.↗
DOE OSTI2020

Giant Magnetoelectric Coupling and Magnetic-Field-Induced Permanent Switching in a Spin Crossover Mn(III) Complex

We investigate giant magnetoelectric coupling at a Mn 3+ spin crossover in [Mn III L]BPh 4 (L = (3,5-diBr-sal) 2 323) with a field-induced permanent switching of the structural, electric, and magnetic properties. An applied magnetic field induces a first-order phase transition from a high spin/low spin (HS-LS) ordered phase to a HS-only phase at 87.5 K that remains after the field is removed. We observe this unusual effect for DC magnetic fields as low as 8.7 T. The spin-state switching driven by the magnetic field in the bistable molecular material is accompanied by a change in electric polarization amplitude and direction due to a symmetry-breaking phase transition between polar space groups. The magnetoelectric coupling occurs due to a γη 2 coupling between the order parameter γ related to the spin-state bistability and the symmetry-breaking order parameter η responsible for the change of symmetry between polar structural phases. We also observe conductivity occurring during the spin crossover and evaluate the possibility that it results from conducting phase boundaries. We perform ab initio calculations to understand the origin of the electric polarization change as well as the conductivity during the spin crossover. Thus, in this work, we demonstrate a giant magnetoelectric effect with a field-induced electric polarization change that is 1/10 of the record for any material.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Hysteretic magnetoresistance in nanowire devices due to stray fields induced by micromagnets

Abstract We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local maximum or local minimum at zero magnetic field. Switching of microstrip magnetizations then results in positive or negative hysteretic dependence as conductance maxima or minima shift with respect to the global external field. Stray fields are found to be in the range of tens of millitesla, comparable to the scale over which the nanowire magnetoresistance develops. We observe that the stray field signal is similar to that obtained in devices with ferromagnetic contacts (spin valves). We perform micromagnetic simulations which are in reasonable agreement with the experiment. The use of locally varying magnetic fields may bring new ideas for Majorana circuits in which nanowire networks require control over field orientation at the nanoscale.

Materials Science↗
DOE OSTI2023

Voltage-controlled magnetic anisotropy enabled by resistive switching

The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present an approach of utilizing resistive switching to control magnetic anisotropy. We study a ferromagnetic oxide that exhibits an electrically triggered metal-to-insulator phase transition producing a volatile resistive switching. The switching occurs in a characteristic spatial pattern, the formation of an insulating barrier perpendicular to the current flow, which results in an unusual ferromagnetic/paramagnetic/ferromagnetic configuration. Further, the formation of this voltage-driven paramagnetic insulating barrier is accompanied by the emergence of a strong uniaxial magnetic anisotropy that overpowers the intrinsic material anisotropy. Our results demonstrate that resistive switching is an effective tool for manipulating magnetic properties. Because resistive switching can be induced in a broad range of materials, our findings could enable a new class of voltage-controlled magnetism systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Self-Cooling Multiferroic Magnetic Devices

Increasing switching frequency reduces magnetic volume, but conventional ferrites, used from tens to hundreds of kilohertz, cannot sustain the temperature and frequency ranges demanded by current and emerging wide bandgap and ultrawide bandgap devices. Here, this work presents a novel magnetic material architecture combining nanocrystalline magnetic material and multiferroic layers for megahertz power conversion. The high saturation flux density of nanocrystalline alloys supports miniaturization but is traditionally constrained by excessive losses above 10 kHz. A revolutionary multiferroic material with solid-state cooling via caloric materials is defined that will enable the next generation of magnetic devices for wide-bandgap-integrated designs. This letter highlights the fundamental physics behind this capability alongside early development of a finite element analysis for the multiferroic-based magnetic device using ANSYS, showing that the core achieves more uniform thermal distribution and reduces peak temperature by 9 ° C compared to conventional ferrites.

Soft magnetic materials↗