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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Design of 1500V/200kW 99.6% Efficiency Dual Active Bridge Converters Based on 1700V SiC Power MOSFET Module

High efficiency, high density and galvanically isolated power converters are attractive for medium voltage high power applications. This paper presents a 1.5kV/200kW bidirectional Dual Active Bridge (DAB) converter using a newly developed 1.7kV SiC MOSFET module. The intended application is megawatt scale solid state transformer (SST) and 1500V PV inverter application using modular architecture. One novel model to estimate the turn-off loss using snubber capacitors is proposed and experimentally verified. An optimized PCB-based busbar design is introduced to reduce the voltage overshoot across the SiC device, making the design suitable for 1.5kVdc applications. The mechanism of how the optimized PCB-based busbar can reduce the voltage overshoot is quantitatively interpreted and experimentally verified. The DAB converter achieved an efficiency of 98.85% at 200kW and a maximum of 99.53% at 60kW. The maximum efficiency for series-resonant mode is 99.6% at 85kW and 99.3% at 200kW. The power density is 26W/inch3 (1.6MW/m3) which is much higher than traditional industry products.

Xu, Wei↗
DOE OSTI2021

3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with experimental current–voltage characteristics. For these 24-nm gate length devices, the electron distribution features a smeared energy peak with an extended tail. This extension of the tail results primarily from the Coulomb scattering within the channel. A fraction of electrons that enter the drain retains their energy, resulting in an out-of-equilibrium distribution in the drain region. The simulated density and average energy of the hot electrons correlate well with experimentally observed device degradation. We propose that the interaction of high-energy electrons with hydrogen-passivated phosphorus dopant complexes within the drain may provide an additional pathway for interface-trap formation in these devices.

42 ENGINEERING↗
DOE OSTI2020

A Novel Voltage Balancing Control With dv/dt Reduction for 10-kV SiC MOSFET-Based Medium Voltage Modular Multilevel Converter

Using high voltage (HV) silicon carbide (SiC) power semiconductors in a modular multilevel converter (MMC) is promising because it results in fewer submodules and lower switching loss compared to conventional Si based solutions. The nearest level pulsewidth modulation (NL-PWM) is commonly used in the MMC for medium voltage applications. However, with the NL-PWM and existing voltage balancing control, there are many submodules that switch their modes in a control cycle, resulting in a high dv/dt during the deadtime of the power semiconductor, which could be multiple times of the dv/dt of the single device. This poses great challenges on the noise immunity and insulation design in the MMC using HV SiC devices, which have very fast switching speed. A novel voltage balancing control, which ensures only two submodules switch their modes in a control cycle, is proposed in this article, limiting the maximum dv/dt to the dv/dt of a single power semiconductor and also maintaining the voltage balance performance. Furthermore, the proposed voltage balancing control is experimentally validated in a 10-kV SiC mosfet based MMC with four submodules per arm.

42 ENGINEERING↗
NASA NTRS1966

MOSFET analog memory circuit achieves long duration signal storage

Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches, triggered by an external voltage-sensing device.

Source record↗
NASA NTRS1968

MOSFET operation at 4.2 K.

N and p channel MOSFET operation at 4.2 K noting noise, AC gain, power dissipation and deterioration under thermal cycling from room temperature

Green, R. R.↗