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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Optical detectors for GaAs MMIC integration: Technology assessment

Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

Claspy, P. C.↗
NASA NTRS1989

Microwave characteristics of GaAs MMIC integratable optical detectors

Interdigitated photoconductive detectors were fabricated on microwave device structures, making them easily integratable with Monolithic Microwave Integrated Circuits (MMIC). Detector responsivity as high as 2.5 A/W and an external quantum efficiency of 3.81 were measured. Response speed was nearly independent of electrode geometry, and all detectors had usable response at frequencies to 6 GHz. A small signal model of the detectors based on microwave measurements was also developed.

Claspy, Paul C.↗
NASA NTRS1989

Optical detectors for GaAs MMIC integration - Technology assessment

Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

Claspy, P. C.↗
NASA NTRS1991

MMIC integration technology investigation

Final technical report on NASA cooperative agreement NCC-167 is presented for the period March 5, 1990 to June 15, 1991. The following topics are included: (1) four to one power combiner for 20 GHz phased array antenna using RADC MMIC phase shifters; and (2) testing of indium phosphide devices.

Kapoor, Vik J.↗
NASA NTRS1992

Advances in MMIC technology for communications satellites

This paper discusses NASA Lewis Research Center's program for development of monolithic microwave integrated circuits (MMIC) for application in space communications. Emphasis will be on the improved performance in power amplifiers and low noise receivers which has been made possible by the development of new semiconductor materials and devices. Possible applications of high temperature superconductivity for space communications will also be presented.

Leonard, Regis F.↗
NASA NTRS1992

Two-dimensional thermal modeling of power monolithic microwave integrated circuits (MMIC's)

Numerical simulations of the two-dimensional temperature distributions for a typical GaAs MMIC circuit are conducted, aiming at understanding the heat conduction process of the circuit chip and providing temperature information for device reliability analysis. The method used is to solve the two-dimensional heat conduction equation with a control-volume-based finite difference scheme. In particular, the effects of the power dissipation and the ambient temperature are examined, and the criterion for the worst operating environment is discussed in terms of the allowed highest device junction temperature.

Fan, Mark S.↗
NASA NTRS1992

Miniature X-band GaAs MMIC analog and bi-phase modulators for spaceborne communications applications

The design concepts, analyses, and the development of GaAs monolithic microwave integrated circuit (MMIC) linear-phase and digital modulators for the next generation of spaceborne communications systems are summarized. The design approach uses a very compact lumped-element, quadrature hybrid, and MESFET-varactors to provide low-loss and well-controlled phase performance for deep-space transponder (DST) applications. The measured results of the MESFET-diode show a capacitance range of 2:1 under reverse bias, and a Q of 38 at 10 GHz. Three cascaded sections of hybrid-coupled reflection phase shifters have been modeled and simulations performed to provide an X-band (8415 +/- 50 MHz) DST phase modulator with +/-2.5 radians of peak phase deviation.

Mysoor, Narayan R.↗
NASA NTRS1991

Millimeter-wave pseudomorphic HEMT MMIC phased array components for space communications

Recent advances in pseudomorphic HEMT MMIC (PMHEMT/MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. This paper describes the development of PMHEMT/MMIC components at Ka-band and V-band. Specifically, the following PMHEMT/MMIC components will be described: power amplifiers at Ka-band; power amplifiers at V-band; and four-bit phase shifters at V-band. For the Ka-band amplifier, 125 mW output power with 5.5 dB gain and 21 percent power added efficiency at 2 dB compression point has been achieved. For the V-band amplifier, 112 mW output power with 6 dB gain and 26 percent power added efficiency has been achieved. And, for the V-band phase shifter, four-bit (45 deg steps) phase shifters with less than 8 dB insertion loss from 61 GHz to 63 GHz will be described.

Lan, G. L.↗
NASA NTRS1991

Application of Ka-band MMIC technology for an orbiter/ACTS communications experiment

A proposed Ka-band communications experiment between the Shuttle Orbiter and the Advanced Communications Technology Satellite (ACTS) is described. Monolithic Microwave Integrated Circuit (MMIC) technology is used in both the Orbiter and on the ground. A 25 dB gain circularly polarized phased array transmits low-bit-rate television to ground stations at the Johnson Space Center and the Lewis Research Center.

Arndt, Dickey↗
NASA NTRS1994

Wideband bandpass filters employing broadside-coupled microstrip lines for MIC and MMIC applications

Wideband bandpass filters employing half-wavelength broadside-coupled microstrip lines suitable for microwave and mm-wave integrated monolithic integrated circuits (MIC and MMIC) are presented. Several filters have been developed at X-band (8 to 12 GHz) with 1 dB insertion loss. Fair agreement between the measured and calculated results has been observed. The analysis of the broadside-coupled microstrip lines used in the filters, based on the quasi-static spectral domain technique, is also described.

Tran, M.↗
NASA NTRS1995

155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators

We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMTs (high-electron mobility transistors). These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 micron. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasi-optical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.

TRT-EXPERIMENTAL↗
NASA NTRS1996

Experimental and theoretical study of parasitic leakage/resonance in a K/Ka-band MMIC package

In this paper, electromagnetic leakage and spurious resonances in a K/Ka-band (18-40 GHz) MMIC hermetic package designed for a phase shifter chip are studied using the finite element method (FEM) and the numerical simulation results are compared with measured data. Both in measured and calculated data several spurious resonances are observed in the 18 to 24 GHz region and the origin of this phenomenon is identified by virtue of the modeling capability of the FEM.

Yook, Jong-Gwan↗
NASA NTRS1998

K-Band Power Enbedded Transmission Line (ETL) MMIC Amplifiers for Satellite Communication Applications

The design, fabrication, and performance of K-band high-efficiency, linear power pHEMT amplifiers implemented in Embedded Transmission Line (ETL) MMIC configuration with unthinned GaAs substrate and topside grounding are reported. A three-stage amplifier achieved a power-added efficiency of 40.5% with 264 mW output at 20.2 GHz. The linear gain is 28.5 dB with 1-dB gain compression output power of 200 mW and 31% power-added efficiency. The carrier-to-third-order intermodulation ratio is approx. 20 dBc at the 1-dB compression point. A RF functional yield of more than 90% has been achieved.

Tserng, Hua-Quen↗
NASA NTRS2003

Progress in GaAs Metamorphic HEMT Technology for Microwave Applications. High Efficiency Ka-Band MHEMT Power MMICs

This paper reviews recent progress in the development of GaAs metamorphic HEMT (MHEMT) technology for microwave applications. Commercialization has begun, while efforts to further improve performance, manufacturability and reliability continue. We also report the first multi-watt MHEMT MMIC power amplifiers, demonstrating up to 3.2W output power and record power-added efficiency (PAE) at Ka-band.

Smith, P. M.↗
NASA NTRS2004

Channel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs

A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).

Freeman, Jon C.↗
NASA NTRS2002

W-band InP based HEMT MMIC low noise amplifiers

This paper presents the designs and measurement results of a three-stage and a four-stage W-band monolithic microwave integrated circuits (MMIC) including a three-stage and a four-stage low noise amplifiers.

monolithic microwave integrated circuits low noise↗