Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “METASTABLE STATES”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Undercoolability and the exposure of metastable structures

The thermodynamic conditions for exposing metastable states are established by deenergizing a material, as in melt quenching, condensation, etc. When these conditions are met, metastable states may appear because they are kinetically preferred. The understanding of these kinetic preferences is reviewed. Formation of metastable structures by melt quenching requires high resistance to crystal nucleation to deep undercooling through the labile regime between the liquidus and configurational freezing temperature, Tg. Further, the growth of the most stable phase must be thermally activated (and therefore quench-suppressible) if the metastable state is to persist at T less than Tg. In metal systems, selective alloying is often crucial to the provision of the nucleation and/or growth resistance requisite to forming various metastable structures. These alloying effects are surveyed and interpreted.

Turnbull, David↗
DOE OSTI2025

Electromagnon Signatures of a Metastable Multiferroic State

Magnetoelectric multiferroic materials, particularly type-II multiferroics where ferroelectric polarizations arise from magnetic order, offer significant potential for the simultaneous control of magnetic and electric properties. However, it remains an open question as to how the multiferroic ground states are stabilized on the free-energy landscape in the presence of intricate competition between the magnetoelectric coupling and thermal fluctuations. Here, in this work, by using terahertz time-domain spectroscopy in combination with an applied magnetic field, photoexcitation, and single-shot detection, we reveal the spectroscopic signatures of a magnetic-field-induced metastable multiferroic state in a hexaferrite. This state remains robust until thermal influences cause the sample to revert to the original paraelectric state. Our findings shed light on the emergence of metastable multiferroicity and its interplay with thermal dynamics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Normal and abnormal evolution of argon metastable density in high-density plasmas

A controversial problem on the evolution of Ar metastable density as a function of electron density (increasing trend versus decreasing trend) was resolved by discovering the anomalous evolution of the argon metastable density with increasing electron density (discharge power), including both trends of the metastable density [Daltrini et al., Appl. Phys. Lett. 92, 061504 (2008)]. Later, by virtue of an adequate physical explanation based on a simple global model, both evolutions of the metastable density were comprehensively understood as part of the abnormal evolution occurring at low- and high-density regimes, respectively, and thus the physics behind the metastable evolution has seemed to be clearly disclosed. In this study, however, a remarkable result for the metastable density behavior with increasing electron density was observed: even in the same electron density regime, there are both normal and abnormal evolutions of metastable-state density with electron density depending on the measurement position: The metastable density increases with increasing electron density at a position far from the inductively coupled plasma antenna but decreases at a position close to the antenna. The effect of electron temperature, which is spatially nonuniform in the plasma, on the electron population and depopulation processes of Argon metastable atoms with increasing electron density is a clue to understanding the results. The calculated results of the global model, including multistep ionization for the argon metastable state and measured electron temperature, are in a good agreement with the experimental results.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2018

Low power adaptive synchronizer

A circuit adapts to the occurrence of metastable states. The circuit inhibits passing of the metastable state to circuits that follow, by clock gating the output stage. In order to determine whether or not to gate the clock of the output stage, two detect circuits may be used. One circuit detects metastability and another circuit detects metastability resolved to a wrong logic level. The results from one or both detector circuits are used to gate the next clock cycle if needed, waiting for the metastable situation to be resolved.

42 ENGINEERING↗
DOE OSTI2014

Investigation of deep-level defects in Cu(In,Ga)Se{sub 2} thin films by a steady-state photocapacitance method

The properties of defect levels located 0.8 eV above the valence band in Cu(In{sub 1−x},Ga{sub x})Se{sub 2} thin films were investigated by a steady-state photocapacitance method. When illuminated by light with a photon energy of 0.8 eV at 60 K, a fast increase, followed by a slow increase, was observed in the photocapacitance transients of all samples. Upon being re-exposed, samples with a low bandgap energy showed a slow decrease in photocapacitance transients. These observations were interpreted using a configuration coordinate model assuming two states for the 0.8 eV defect: a stable state D and its metastable state D* with a large lattice relaxation. The difference in the evolution mechanisms of the photocapacitance transients was attributed to the difference in the optical transition of carriers between the two states of the 0.8 eV defect and the valence and conduction bands.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Metastable charge-transfer state of californium( iii ) compounds

Among a series of anomalous physical and chemical properties of Cf(III) compounds revealed by recent investigations, the present work addresses the characteristics of the optical spectra of An(HDPA) 3 ·H 2 O (An = Am, Cm, and Cf), especially the broadband photoluminescence from Cf(HDPA) 3 ·H 2 O induced by ligand-to-metal charge transfer (CT). As a result of strong ion–ligand interactions and the relative ease of reducing Cf(III) to Cf(II), a CT transition occurs at low energy (<3 eV) via the formation of a metastable Cf(II) state. It is shown that the systematic trend in CT transitions of the lanthanide series is not paralleled by actinide elements lighter than Cf(III), and californium represents a turning point in the periodicity of the actinide series. Analyses and modeling of the temperature-dependent luminescence dynamics indicate that the metastable Cf(II) charge-transfer state undergoes radiative and non-radiative relaxations. Broadening of the CT transition arises from strong vibronic coupling and hole–charge interactions in the valence band. As a result, the non-radiative relaxation of the metastable CT state results from a competition between phonon-relaxation and thermal tunneling that populates the excited states of Cf(III).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Hydrogen Evolution on Restructured B-Rich WB: Metastable Surface States and Isolated Active Sites

Borides have been recently identified to be a class of earth-abundant and low-cost materials that are surprisingly active toward oxidative dehydrogenation and hydrogen evolution reaction (HER) catalysis. Here, we explain from first-principles calculations the HER activity of WB, an industrial material known for its superior physical properties and chemical inertness. We find that, compared to bulk termination, a major surface reconstruction takes place, leading to the off-stoichiometric B-rich surface termination that contains the active sites. The hydrogen adsorbate configurations are further investigated under various adsorbate coverages. Many competing configurations appear to be accessible in reaction conditions, and thus, a grand canonical ensemble is established to describe the catalytic system. A phase diagram of adsorbate coverages is constructed as a function of pH and the applied potential. A complex reaction network is presented based on the ensemble-averaged reaction rates, and the electrocatalytic activities are evaluated under different overpotentials. Here, the major contributors to the activity are found to be a few metastable surface states with a distinct electronic structure that are only accessible at high adsorbate coverages in reaction conditions. In addition, while the activity of the dominant active site is nearly the same as that on the unreconstructed WB, the B-rich formations play an important role of isolating the active sites and preventing the passivation of the surface with H 2 bubble formation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1995

Gas-Sensing Flip-Flop Circuits

Gas-sensing integrated circuits consisting largely of modified static random-access memories (SRAMs) undergoing development, building on experience gained in use of modified SRAMs as radiation sensors. Each SRAM memory cell includes flip-flop circuit; sensors exploit metastable state that lies between two stable states (corresponding to binary logic states) of flip-flop circuit. Voltages of metastable states vary with exposures of gas-sensitive resistors.

Buehler, Martin G.↗
DOE OSTI2017

In-situ X-Ray Analysis of Rapid Thermal Processing for Thin-Film Solar Cells: Closing the Gap between Production and Laboratory Efficiency

For materials synthesis, it is well known that the material final state may not reach equilibrium and depends on the synthetic process. In particular, processes that quickly remove the available energy from the material may leave it in a metastable state and the metastability may actually impart desirable functional properties. By its very nature, Rapid thermal processing (RTP) is ideally suited to produce such metastable materials. However, metastability and the dynamics of reaching a metastable state are poorly understood, since this is best accomplished through in situ monitoring. In this regard, RTP is particularly challenging as the processing time are very short (seconds to minutes). As a result, there is only poor understanding, and hence use, of RTP in industry. This is potentially a cost-increasing limitation, because RTP can decrease cost by decreasing processing time, and as such, increase throughput and decrease the total thermal budget of processing - a significant cost. RTP is already being used for key processing steps in PV technologies. With silicon wafer PV, it is used for establishing electrical contact between the Ag metal grid and the silicon (known as firing). In this process, a silicon wafer with deposited metal/frit in a grid pattern is heated rapidly to temperatures between 750 and 800 ºC. The processing time when the temperature is held above 600ºC is short (<5 seconds). This process has historically been optimized empirically and it is unclear how the thermal processing affects formation of the final contact between the metal and the silicon. In the case of thin-film PV, RTP has been demonstrated in the process of making absorber layers, i.e. CIGS and CZTS. Use of RTP can reduce the processing time from 10s of minutes to seconds, reducing the thermal budget and increasing the throughput significantly. The conversion from precursor material to final PV material is not well understood, and most of the process optimization is done empirically. Again, the proposed in situ monitoring will provide insight into the conversion process. We have developed a unique instrument for in situ monitoring of the reaction process during RTP. The most fundamental property to monitor is the atomic arrangement (for solids, crystalline structure) and thus we have focused on this property. The chamber was designed to collect X-ray diffraction (XRD) for crystal phase determination, although it has lent insight in the formation of liquids. We designed and constructed both inert (air) and reactive (S/Se) versions of this chamber. We have applied the RTP-XRD methodology to: silicon solar cell electrical contact formation; the reaction sequence for forming CIGS PV thin films from copper selenide and indium gallium selenide precursors; the phase sequence for forming HC(NH2)2PbI3 (FAPbI3) and CH3NH3PbI3 (MAPbI3) hybrid-perovskite PV thin films. The RTP instrument enables real-time collection of X-ray diffraction data with intervals as short as 100 ms, and while heating at ramp rates as high 100 ºCs-1 up to 1200 ºC. The system is portable and can be installed on a synchrotron beamline. The RTP reactor consists of a metallic body (front cap assembly, central block and end cap assembly) that houses a quartz reaction chamber. The sample is secured inside the reaction chamber on a sample holder connected to the front-cap assembly. Modifications of the chamber were made for safely handling sulfur and selenium vapor environments. A Se/S source holder was added to generate a Se/S over pressure in the chamber on heating and the entrance window is made wider in order to accommodate the detachable additional holder. Se/S are toxic in nature and therefore a proper Se/S trapping is used before releasing the gases to exhaust. Screen-printing provides an economically attractive means for making Ag electrical contacts to Si solar cells, but the use of Ag substantiates a significant manufacturing cost, and the glass frit used in the paste to enable contact formation contains Pb. To achieve optimal electrical performance and to develop pastes with alternative, abundant, and non-toxic materials requires understanding the contact formation process during firing. We use the RTP-XRD chamber during firing of Ag-Si contacts to reveal the reaction sequence for contact formation. The findings show that between 500 ºC and 650 ºC PbO in the frit etches the SiNx antireflective-coating on the solar cell, exposing the Si surface. Then, above 650 ºC, Ag+ dissolves into the molten glass frit – key for enabling deposition of metallic Ag on the emitter surface and precipitation of Ag nanocrystals within the glass. This clarifies contact formation mechanisms and can be used to suggest approaches for development of inexpensive, nontoxic solar cell contacting pastes. We used the RTP/XRD chamber to study the formation of CuInGaS/Se (CIGS) PV films by in-situ selenization of pre-deposited metal stacks and annealing of pre-deposited Cu-In-Ga-Se precursors. During the metal stack selenization, we observed that Se first reacts with the metals and forms selenides. We observed formation of intermetallics such as Cu2In and binary selenides during heating. On further annealing in a Se atmosphere, CuInSe2 and CuGaSe2 forms which on heating up to 550 °C reacts further to form the CIGS phase. On prolonged exposure to 550 °C for more than 5 mins or higher temperature, we see separation into Ga-rich and Ga-depleted CIGS phases. On introducing a holding step at 400 °C for 10 min during the annealing ramp, the CIGS phase (forms between 500-550 °C), appears to be less prone to decomposition into high-Ga and low-Ga phases during holding at peak temperature. Lead halide perovskites have emerged as successful optoelectronic materials with high photovoltaic power conversion efficiencies and low material cost. However, substantial challenges remain in the scalability, stability and fundamental understanding of the materials. We demonstrated the application of radiative thermal annealing, an easily scalable processing method, for synthesizing formamidinium lead iodide (FAPbI3) perovskite solar absorbers. Devices fabricated from films formed via radiative thermal annealing have equivalent efficiencies to those annealed using a conventional hotplate. By coupling results from in situ x-ray diffraction using a radiative thermal annealing system with device performances, we mapped the processing phase space of FAPbI3 and corresponding device efficiencies. Our map of processing-structure-performance space suggests the commonly used FAPbI3 annealing time, 10 min at 170 °C, can be significantly reduced to 40 s at 170 °C without affecting the photovoltaic performance. Applying the Johnson-Mehl-Avrami model to the decomposition into PbI2, the activation energy was determined. We also presented a well-controlled, manufacturing relevant annealing method, radiative thermal annealing, for the methylammonium lead triiodide films formed by solvent engineering process, with dimethylformamide (DMF) and dimethyl sulfoxide as solvent and diethyl ether as the antisolvent. Radiative thermal annealing can produce high quality perovskite films, evidenced by high efficiency solar cell devices, in a shorter time than the widely-used hotplate annealing. Using in-situ x-ray diffraction during the radiative annealing, we show that the role of the antisolvent is not to form an intermediate compound (a methylammonium iodide, lead iodide, and dimethyl sulfoxide compound) by washing of the main solvent (DMF) but to achieve a pin-hole free, uniform film of methylammonium lead iodide. We find that having the intermediate compound does not guarantee a high quality (pin-hole free) perovskite film. Our study was extended to reveal the effect of annealing environment, annealing temperature profile, and deposition substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Elastic model of dry friction

Friction of elastic bodies is connected with the passing through the metastable states that arise at the contact of surfaces rubbing against each other. Three models are considered that give rise to the metastable states. Friction forces and their dependence on the pressure are calculated. In Appendix A, the contact problem of elasticity theory is solved with adhesion taken into account.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2006

Floating the Ball: Advances in the Technology of Electrostatic Levitation

Electrostatic Levitation (ESL) is an emerging technology. The MSFC ESL is a NASA facility that supports investigations of refractory solids and melts. The facility can be used to process a wide variety of materials including metals, alloys, ceramics, glasses and semiconductors. Containerless processing via ESL provides a high-purity environment for the study of high temperature materials and access to metastable states. Scientific topics investigated in the facility include nucleation, undercooling, metastable state formation and metallic glass formation. Additionally, the MSFC ESL provides data for the determination of phase diagrams, time-temperature-transition diagrams, viscosity, surface tension, density, heat capacity and creep resistance. In order to support a diverse research community, the MSFC ESL facility has developed a number of technical capabilities, including a portable system for in situ studies of structural tran$hrmations during processing at the high-energy X-ray beamline at the Advanced Photon Source of Argonne National Laboratory. The capabilities of the MSFC ESL facilities will be discussed and selected results of materials processing and characterization studies will be presented.

Rogers, Jan R.↗
NASA NTRS1975

Scattering of 4.5 eV electrons by ground /x 3 Sigma g minus/ state and metastable /a 1 Delta g/ oxygen molecules

The paper reports on differential and integral cross sections for scattering of 4.5 eV electrons by ground state (x 3 Sigma g minus) and metastable (a 1 Delta g) oxygen molecules in the -2.0 eV to plus 2.0 eV energy loss range. The cross section for the (a 1 Delta g to b 1 Sigma g plus) transition was found to be more than an order of magnitude larger than that of the excitation of the b state from the ground state. It was found that the principle of detailed balance can be applied to the rotationally unresolved inelastic and superelastic electronic transitions between the (x 3 Sigma g minus) and (a 1 Delta g) states, which indicates that for this transition one may neglect the very different rotational level structure of the two states in estimating superelastic cross section from inelastic data to an accuracy of about 15 per cent.

Hall, R. I.↗
NASA NTRS1995

Solar photoionization as a loss mechanism of neutral interstellar hydrogen in interplanetary space

Two primary loss mechanisms of interstellar neutral hydrogen in interplanetary space are resonance charge exchange ionization with solar wind protons and photoionization by solar EUV radiation. The later process has often been neglected since the average photoionization rate has been estimated to be as much as 5 to 10 times smaller than the charge exchange rate. These factors are based on ionization rates from early measurements of solar EUV and solar wind fluxes. Using revised solar EUV and solar wind fluxes measured near the ecliptic plane we have reinvestigated the ionization rates of interplanetary hydrogen. The result of our analysis indicates that indeed the photoionization rate during solar minimum can be smaller than charge exchange by a factor of 5; however, during solar maximum conditions when solar EUV fluxes are high, and solar wind fluxes are low, photoionization can be over 60% of the charge exchange rate at Earth orbit. To obtain an accurate estimate of the importance of photoionization relative to charge exchange, we have included photoionization from both the ground and metastable states of hydrogen. We find, however, that the photoionization from the metastable state does not contribute significantly to the overall photoionization rate.

Ogawa, H. S.↗
DOE OSTI2015

Temperature-Dependent Light-Stabilized States in Thin-Film PV Modules: Preprint

Thin-film photovoltaic modules are known to exhibit light-induced transient behavior which interferes with accurate and repeatable measurements of power. Typically power measurements are made after a light exposure in order to target a 'light state' of the module that is representative of outdoor performance. Here we show that the concept of a unique light state is poorly defined for both CIGS and CdTe modules. Instead we find that their metastable state after a light exposure can depend on the temperature of the module during the exposure. We observe changes in power as large as 5.8% for a 20 degrees C difference in light exposure temperature. These results lead us to conclude that for applications in which reproducibility and repeatability are critical, module temperature should be tightly controlled during light exposure.

14 SOLAR ENERGY↗
DOE OSTI2022

Thermalization of Fluorescent Protein Exciton–Polaritons at Room Temperature

Fluorescent proteins (FPs) have recently emerged as a serious contender for realizing ultralow threshold room temperature exciton–polariton condensation and lasing. Here, this contribution investigates the thermalization of FP microcavity exciton–polaritons upon optical pumping under ambient conditions. Polariton cooling is realized using a new FP molecule, called mScarlet, coupled strongly to the optical modes in a Fabry–Pérot cavity. Interestingly, at the threshold excitation energy (fluence) of ≈9 nJ per pulse (15.6 mJ cm –2 ), an effective temperature is observed, T eff ≈ 350 ± 35 K close to the lattice temperature indicative of strongly thermalized exciton–polaritons at equilibrium. This efficient thermalization results from the interplay of radiative pumping facilitated by the energetics of the lower polariton branch and the cavity Q-factor. Direct evidence for dramatic switching from an equilibrium state into a metastable state is observed for the organic cavity polariton device at room temperature via deviation from the Maxwell–Boltzmann statistics at k || = 0 above the threshold. Thermalized polariton gases in organic systems at equilibrium hold substantial promise for designing room temperature polaritonic circuits, switches, and lattices for analog simulation.

36 MATERIALS SCIENCE↗