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Results for “MEMORY DEVICES”
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Tantalum Oxide Resistive Memory Devices by Ion Assisted Deposition.
Abstract not provided.
Evaluating Resistive Memory Devices for Neuromorphic Computing Using Ultrashort Voltage Pulses.
Abstract not provided.
Evaluating Resistive Memory Devices for Neuromorphic Computing Using Ultrashort Voltage Pulses.
Abstract not provided.
High-Resolution Characterization of Josephson Junctions and Magnetic Multilayers for Low-Power Superconducting Logic and Memory Devices.
Abstract not provided.
Impact of Linearity and Write Noise of Analog Resistive Memory Devices in a Neural Algorithm Accelerator.
Abstract not provided.
Compact Model of Resistive Memory Devices for Pulsed Analog and Neuromorphic Applications.
Abstract not provided.
Resistive switching memory device
Provided herein are resistive switching devices comprising a nanocomposite, an inert electrode and an active electrode. Also provided are methods for preparing and using the disclosed resistive switching devices.
Accelerating machine learning using analogue materials memory devices and circuits.
Abstract not provided.
Method and apparatus for data protection in memory devices
An apparatus and method for efficiently transmitting data are described. A transmitter sends data to a receiver. An encoder of the transmitter divides a received first block of data into multiple sub-blocks. The encoder selects a portion of each sub-block to compare to one another. A portion in a particular sub-block has a same offset and a same size as other portions of other sub-blocks. If the encoder determines the multiple portions match one another, the encoder sends, to the receiver, a second block of data corresponding to the first block of data. The second block of data has a same size as a size of the received first block of data, and the second block of data includes security data from one of multiple error correction schemes. Therefore, the second block of data provides security without increasing an amount of data to transmit.
Investigation of new concepts of adaptive devices
Memory device whose threshold voltage can be altered reproducibly by applied voltage pulse
High-performance ultra-low power VLSI analog processor for data compression
An apparatus for data compression employing a parallel analog processor. The apparatus includes an array of processor cells with N columns and M rows wherein the processor cells have an input device, memory device, and processor device. The input device is used for inputting a series of input vectors. Each input vector is simultaneously input into each column of the array of processor cells in a pre-determined sequential order. An input vector is made up of M components, ones of which are input into ones of M processor cells making up a column of the array. The memory device is used for providing ones of M components of a codebook vector to ones of the processor cells making up a column of the array. A different codebook vector is provided to each of the N columns of the array. The processor device is used for simultaneously comparing the components of each input vector to corresponding components of each codebook vector, and for outputting a signal representative of the closeness between the compared vector components. A combination device is used to combine the signal output from each processor cell in each column of the array and to output a combined signal. A closeness determination device is then used for determining which codebook vector is closest to an input vector from the combined signals, and for outputting a codebook vector index indicating which of the N codebook vectors was the closest to each input vector input into the array.
Metal-organic molecular device for non-volatile memory storage
Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.
Accessing memory
A disclosed example method involves performing simultaneous data accesses on at least first and second independently selectable logical sub-ranks to access first data via a wide internal data bus in a memory device. The memory device includes a translation buffer chip, memory chips in independently selectable logical sub-ranks, a narrow external data bus to connect the translation buffer chip to a memory controller, and the wide internal data bus between the translation buffer chip and the memory chips. A data access is performed on only the first independently selectable logical sub-rank to access second data via the wide internal data bus. The example method also involves locating a first portion of the first data, a second portion of the first data, and the second data on the narrow external data bus during separate data transfers.
A visual-display and storage device
Memory and display device uses cathodochromic material to store visual information and fast phosphor to recall information for display and electronic processing. Cathodochromic material changes color when bombarded with electrons, and is restored to its original color when exposed to light of appropiate wavelength.
Memory access statistics monitoring
Systems, apparatuses, and methods related to memory access statistics monitoring are described. A host is configured to map pages of memory for applications to a number of memory devices coupled thereto. A first memory device comprises a monitoring component configured to monitor access statistics of pages of memory mapped to the first memory device. A second memory device does not include a monitoring component capable of monitoring access statistics of pages of memory mapped thereto. The host is configured to map a portion of pages of memory for an application to the first memory device in order to obtain access statistics corresponding to the portion of pages of memory upon execution of the application despite there being space available on the second memory device and adjust mappings of the pages of memory for the application based on the obtained access statistics corresponding to the portion of pages.
Research on a non-destructive fluidic storage control device
Fluidic memory device with associated fluidic alpha numerical display