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At least 109 records · Page 6

Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs

Ultra-low voltage drop tunnel junctions (TJs) were utilized to enable multi-active region blue light emitting diodes (LEDs) with up to three active regions in a single device. The multi-active region blue LEDs were grown monolithically by metal-organic chemical vapor deposition (MOCVD) without growth interruption. This is the first demonstration of a MOCVD grown triple-junction LED. Optimized TJ design enabled near-ideal voltage and EQE scaling close to the number of junctions. Furthermore, this work demonstrates that with proper TJ design, improvements in wall-plug efficiency at high output power operation are possible by cascading multiple III-nitride based LEDs.

42 ENGINEERING↗

Vertical full-colour micro-LEDs via 2D materials-based layer transfer

Micro-LEDs (µLEDs) have been explored for augmented and virtual reality display applications that require extremely high pixels per inch and luminance. However, conventional manufacturing processes based on the lateral assembly of red, green and blue (RGB) µLEDs have limitations in enhancing pixel density. Recent demonstrations of vertical µLED displays have attempted to address this issue by stacking freestanding RGB LED membranes and fabricating top-down, but minimization of the lateral dimensions of stacked µLEDs has been difficult. Here we report full-colour, vertically stacked µLEDs that achieve, to our knowledge, the highest array density (5,100 pixels per inch) and the smallest size (4 µm) reported to date. This is enabled by a two-dimensional materials-based layer transfer technique that allows the growth of RGB LEDs of near-submicron thickness on two-dimensional material-coated substrates via remote or van der Waals epitaxy, mechanical release and stacking of LEDs, followed by top-down fabrication. The smallest-ever stack height of around 9 µm is the key enabler for record high µLED array density. We also demonstrate vertical integration of blue µLEDs with silicon membrane transistors for active matrix operation. Furthermore, these results establish routes to creating full-colour µLED displays for augmented and virtual reality, while also offering a generalizable platform for broader classes of three-dimensional integrated devices.

42 ENGINEERING↗

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using ( In , Ga ) N Alloy Quantum Barriers

We report on experimental and simulation-based results using ( In , Ga ) N alloy quantum barriers in c -plane green light-emitting diode (LED) structures as a means to improve vertical carrier transport and reduce forward voltage ( V F ) . Three-dimensional device simulations that include random alloy fluctuations are used to understand carrier behavior in a disordered potential. The simulated current density–voltage ( J - V ) characteristics and modified electron-hole overlap | F mod | 2 indicate that increasing the indium fraction in the ( In , Ga ) N quantum barriers leads to a reduced polarization discontinuity at the interface between the quantum barrier and quantum well, thereby reducing V F and improving | F mod | 2 . Maps of electron and hole current through the device show a relatively homogenous distribution in the X Y plane for structures using Ga N quantum barriers; in contrast, preferential pathways for vertical transport are identified in structures with ( In , Ga ) N barriers as regions of high and low current. A positive correlation between hole (electron) current in the p -side ( n -side) barrier and indium fraction reveals that preferential pathways exist in regions of high indium content. Furthermore, a negative correlation between the strain ε z z and indium fraction shows that high indium content regions have reduced strain-induced piezoelectric polarization in the Z direction due to the mechanical constraint of the surrounding lower indium content regions. Experimentally, multiple quantum well green LEDs with ( In , Ga ) N quantum barriers exhibit lower V F and blue-shifted wavelengths relative to LEDs with Ga N quantum barriers, consistent with simulation data. These results can be used to inform heterostructure design of low V F , long-wavelength LEDs and provide important insight into the nature of carrier transport in III-nitride alloy materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Research note: LED lighting – A global enterprise

There is considerable focus on technology manufacturing locations and the value in funding innovation when upstream products are not manufactured within a domestic economy. Light-emitting diodes (LEDs) are such an upstream product. Here, we evaluate the value added along the supply chain of luminaires, a product that utilizes LEDs, using bottom-up cost modelling. Coupling the results with analysis of shipping cost and time, this analysis examines how advances in LEDs can incentivize LED luminaire adoption leading to the potential for significant domestic manufacturing effects even if the upstream products are produced in other economies.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Dimming LEDs with Phase-Cut Dimmers: The Specifier's Process for Maximizing Success

This report reviews how phase-cut dimmers work, how LEDs differ from the incandescent lamps that the dimmers were historically designed to control, and how these differences can lead to complications when trying to dim LEDs. Compatibility between a specific LED source and a specific phase-cut dimmer is often unknown and difficult to assess, and ensuring compatibility adds complexity to the design, specification, bidding, and construction observation phases for new buildings and major remodel projects. To maximize project success, this report provides both general guidance and step-by-step procedures for designing phase-controlled LED dimming on both new and existing projects, as well as real-world examples of how to use those procedures.

0-10V↗

Long-term Testing Results for the 2008 Installation of LED Luminaires at the I-35 West Bridge in Minneapolis

This document reports the long-term testing results from an extended GATEWAY project that was first reported in “Demonstration Assessment of Light-Emitting Diode (LED) Roadway Lighting at the I-35W Bridge, in Minneapolis, MN,” August 2009. That original report presented the results of lighting the newly reconstructed I 35W Bridge using LEDs in place of conventional high-pressure sodium (HPS) roadway luminaires, comparing energy use and illuminance levels with a simulated baseline condition. That installation was an early stage implementation of LED lighting and remains one of the oldest installations in continued operation today. This document provides an update of the LED system’s performance since its installation in September 2008.

LED Roadway Lighting↗

Demonstration Assessment of Light-Emitting Diode (LED) Roadway Lighting, I-35W Bridge, Minneapolis, Minnesota, Phase II Report

On the I-35W Bridge in Minneapolis, Minnesota, the GATEWAY program conducted a two-phase demonstration of LED roadway lighting on the main span, which is one of the country's oldest continuously operated exterior LED lighting installations. The Phase II report documents longer-term performance of the LED lighting system that was installed in 2008, and is the first report on the longer-term performance of LED lighting in the field.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Wide range yellow emission Sr8MgLa(PO4)7: Eu2+, Mn2+, Tb3+ phosphors for near ultraviolet white LEDs

Highlights: • The wide range of the emission spectra of Sr{sub 8}MgLa(PO{sub 4}){sub 7}: Eu{sup 2+}{sub 0.03} were clarified by Van Uitert equation and the crystal field strength equation. • The Mn{sup 2+} and Tb{sup 3+} had enhanced the total PL intensity up to 30% comparing to only Eu{sup 2+} doped phosphor. • W-LEDs using Sr{sub 8}MgLa(PO{sub 4}){sub 7}: Eu{sup 2+}{sub 0.03}, Mn{sup 2+}{sub 0.06}, Tb{sup 3+}{sub 0.06} and BAM: Eu{sup 2+} resulted in an excellent CRI of 89 and CIE coordinates of (0.3463, 0.3898). - Abstract: A series of single phased phosphors Sr{sub 8}MgLa(PO{sub 4}){sub 7}: Eu{sup 2+}, Mn{sup 2+}, Tb{sup 3+} were synthesized by solid state reaction methods for applications of white light emitting diodes(w-LEDs). The broad absorption band at the near ultraviolet (NUV) region of 250–450 nm was obtained, which is ascribed to the 4f{sup 7}→ 4f{sup 6}5d{sup 1} electronic transition of the Eu{sup 2+} ions. Under NUV excitation, the broad yellow emission was obtained from tri-activated Sr{sub 8}MgLa(PO{sub 4}){sub 7} phosphors via combining three emission bands centered at 500, 550, and 600 nm contributed by Eu{sup 2+}, Tb{sup 3+} and Mn{sup 2+}, respectively. The optimized concentrations of Mn{sup 2+} and Tb{sup 3+} were 6 mol%, respectively, which enhanced the total PL intensity up to 30% comparing to only Eu{sup 2+} doped phosphor. Moreover, the quantum efficiency of Sr{sub 8}MgLa(PO{sub 4}){sub 7}: Eu{sup 2+}, Mn{sup 2+}, Tb{sup 3+} phosphor had achieved up to 52%. The combination of a NUV chip with compound of Sr{sub 8}MgLa(PO{sub 4}){sub 7}: Eu{sup 2+}, Mn{sup 2+}, Tb{sup 3+} and BaMgAl{sub 10}O{sub 17}:Eu{sup 2+} achieved tunable w-LEDs with high CRI. The results suggest that this single phased Sr{sub 8}MgLa(PO{sub 4}){sub 7}: Eu{sup 2+}, Mn{sup 2+}, Tb{sup 3+} phosphor can be a key for the phosphor converted w-LEDs for warm white light emission.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A portable time-domain LED fluorimeter for nanosecond fluorescence lifetime measurements

Fluorescence lifetime measurements are becoming increasingly important in chemical and biological research. Time-domain lifetime measurements offer fluorescence multiplexing and improved handling of interferers compared with the frequency-domain technique. In this paper, an all solid-state, filterless, and highly portable light-emitting-diode based time-domain fluorimeter (LED TDF) is reported for the measurement of nanosecond fluorescence lifetimes. LED based excitation provides more wavelengths options compared to laser diode based excitation, but the excitation is less effective due to the uncollimated beam, less optical power, and longer latency in state transition. Pulse triggering and pre-bias techniques were implemented in our LED TDF to improve the peak optical power to over 100 mW. The proposed pulsing circuit achieved an excitation light fall time of less than 2 ns. Electrical resetting technique realized a time-gated photo-detector to remove the interference of the excitation light with fluorescence. These techniques allow the LED fluorimeter to accurately measure the fluorescence lifetime of fluorescein down to concentration of 0.5 μM. In addition, all filters required in traditional instruments are eliminated for the non-attenuated excitation/emission light power. These achievements make the reported device attractive to biochemical laboratories seeking for highly portable lifetime detection devices for developing sensors based on fluorescence lifetime changes. The device was initially validated by measuring the lifetimes of three commercial fluorophores and comparing them with reported lifetime data. It was subsequently used to characterize a ZnSe quantum dot based DNA sensor.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth

This study reports a method to reuse GaAs substrates with a batch process for thin film light emitting diode (TF-LED) production. The method is based on an epitaxial lift-off technique. With the developed reclaim process, it is possible to get an epi-ready GaAs surface without additional time-consuming and expensive grinding/polishing processes. The reclaim and regrowth process was investigated with a one layer epitaxial test structure. The GaAs surface was characterized by an atomic force microscope directly after the reclaim process. The crystal structure of the regrown In{sub 0.5}(Ga{sub 0.45}Al{sub 0.55}){sub 0.5}P (Q{sub 55}) layer was investigated by high resolution x-ray diffraction and scanning transmission electron microscopy. In addition, a complete TF-LED grown on reclaimed GaAs substrates was electro-optically characterized on wafer level. The crystal structure of the epitaxial layers and the performance of the TF-LED grown on reclaimed substrates are not influenced by the developed reclaim process. This process would result in reducing costs for LEDs and reducing much arsenic waste for the benefit of a green semiconductor production.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

From lab to lamp: Understanding downconverter degradation in LED packages

Downconverters, primarily inorganic phosphors, are critical components in white solid-state LED-based lighting and liquid crystal display backlights. Research efforts have led to a fundamental understanding of a downconverter's absorption, photoluminescence, and efficiency as a function of composition, structure, and processing conditions. However, considerably less work has focused on the reliability of phosphors once they are incorporated into LED packages. Solving these issues is often the final step before the commercialization of new materials, but the significant resources and time required to evaluate and mitigate materials failure are rarely discussed in the literature. In this Perspective, we discuss the need for conducting downconverter reliability testing and the potential of accelerating, screening, and understanding downconverter failure modes. Our focus highlights the mechanisms of failure and discusses how this influences materials selection and the design of different LED packages. We also stress the potential for accelerated reliability testing protocols and note the potential role first-principles calculations and data-driven models could play in establishing the compositional-processing trends for different aspects of downconverter reliability. In conclusion, we close with possible research directions that could improve downconverter reliability and emphasize the importance of assessing a material's (chemical) stability where multiple manufacturing and processing steps can dictate system performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

The nonuniform hole distribution between InGaN quantum wells (QWs) of light emitting diodes (LEDs) has a negative impact on LED efficiency. The uniformity can be increased by using lateral hole injection through sidewalls of V-defects, which form at threading dislocations. However, the inherent coupling between the V-defects and dislocations might affect efficiency of the hole injection and nonradiative recombination. In this work, we have tested the possible impact of the dislocations on the injection and recombination by means of scanning near-field electroluminescence and photoluminescence spectroscopy on single green-emitting InGaN QW LEDs containing large (∼0.5 μm) V-defects. The measurements have not provided any evidence of a lower hole injection efficiency or enhanced nonradiative recombination at the dislocations located at the V-defect facets or their apexes. This shows that large V-defects are excellent volumetric injectors for long wavelength InGaN LEDs. Furthermore, it was established that V-defects are preferential hole injectors even in single quantum well devices. Compared to vertical injection, the V-defect injection allows lowering the operating voltage, which should contribute to an enhanced wall plug efficiency.

42 ENGINEERING↗

PMT calibration for the JSNS^2-II far detector with an embedded LED system

The JSNS^2-II (the second phase of JSNS^2, J-PARC Sterile Neutrino Search at J-PARC Spallation Neutron Source) is an experiment aimed at searching for sterile neutrinos. Here, this experiment has entered its second phase, employing two liquid scintillator detectors located at near and far positions from the neutrino source. Recently, the far detector of the experiment has been completed and is currently in the calibration phase. The following properties of all functioning Photo-Multiplier-Tubes (PMTs) to detect the neutrino events in the far detector have been calibrated: PMT gain, its dependence of supplied High Voltage (HV), Peak-to-Valley (PV), and signal timing. This paper presents a detailed description of the calibration process utilizing the LED system. The LED system of the far detector uses two Ultra-Violet (UV) LEDs, which are effective in calibrating all of the PMTs at once. The UV light is converted into the visible light wavelengths inside liquid scintillator via the wavelength shifters, providing pseudo-isotropic light. To achieve a good energy resolution for physics events, a relative gain adjustment of up to 10% is required for all functioning PMTs. This will be achieved using the HV curves measured and the results of the LED calibration. The Peak-to-Valley (PV) ratio values, which distinguish the single photo-electron signal from the pedestal, are similar to those from the production company. Additionally, the precision of the PMT signal timing is measured to be 2.1 ns. This meets the event reconstruction requirement of 10 ns.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

High-power LEDs based on InGaAsP/InP heterostructures

High-power light-emitting diodes (LEDs) with mesa diameters of 100, 200, and 300 μm are developed on the basis of InGaAsP/InP heterostructures. The mesas are close in shape to a truncated cone with a generatrix inclination angle of ∼45° in the vicinity of the active region of the LED, with a ring etched around the mesa serving as a reflector. The emission spectra and directivity patterns of these LEDs are studied in a wide range of current densities and it is shown that radiative recombination is dominant to a current density of ∼5000 A/cm{sup 2}, which makes these structures promising for the development of high-power LEDs. An emission power of ∼14 mW is obtained in the continuous-wave mode (I = 0.2 A, λ = 1.1 μm), and that of 77 mW, in the pulsed mode (I = 2 A, λ = 1.1 μm), which corresponds to external quantum efficiencies of 6.2 and 3.4%, respectively.

36 MATERIALS SCIENCE↗

Patterns of Variation in the External Quantum Efficiency of InGaN/GaN Green LEDs during Accelerated Tests

The causes and mechanisms of variation in the quantum efficiency and other characteristics of InGaN/GaN heterostructures are actively investigated in various operating modes. The results are presented from an experimental study of the variation in the external quantum efficiency of low-power InGaN/GaN green light-emitting diodes with and without a quantum well in the space–charge region (SCR) of the heterostructure in the accelerated test mode. It is found that after 8 hours of testing at a temperature of 300 K in the pulse mode with a pulse amplitude of 0.5 A, a pulse duration of 100 µs, and a duty cycle of 100, the external quantum efficiency grows for all LEDs without a quantum well in the SCR and diminishes for LEDs with a quantum well throughout the range of operating currents. It is shown that at a low level of injection, the intensity of emission of light emitting diodes without a quantum well in the SCR is determined by recombination processes according to the Shockley–Read–Hall mechanism, while that of LEDs with a quantum well is determined by tunneling–recombination processes. Current training of green LEDs based on InGaN/GaN heterostructures in the forced pulse mode for 4 hours can be used as a technological operation for stabilizing their lighting characteristics, and for identifying potentially unreliable products under conditions of mass production.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

High-Voltage AlInGaN LED Chips

A high-voltage light-emitting diode (LED) flip chip based on an AlInGaN heterostructure is developed and fabricated. The LED flip chip consists of 16 elements connected in series, each of which is a convential LED. The chip with a total area of 1.25 × 1.25 mm is intended for a working current of 20 mA and a forward voltage of 48 V. To improve the current-distribution uniformity over the active region of the chip elements and to minimize the losses of the element area occupied by the n-type contact, the n-type contact pads in them are arranged inside the p-type contact region due to the two-level metallization layout with an intermediate insulating layer of dielectric. The arrangement topology of the contact pads is developed using numerical simulation. An increase in the quantum efficiency of the chip is provided by the application of combinations of metals with a high reflectance at the LED emission wavelength, which are used when fabricating n- and p-type contacts as well as current-carrying strips.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The Energy and Operational Impacts of Using 0-10V Control for LED Streetlights

Lighting systems have historically utilized either a proprietary control method, or one of a handful of standardized methods (e.g., 0-10V, DALI, DMX512) aimed at facilitating vendor interoperability. The utility and market success of the standardized methods has been limited for a variety of reasons. Although 0-10V is presently the most commonly available control interface for indoor and outdoor products in North America – even after the emergence of LED products and “connected lighting systems” with more modern network interfaces and luminaire-level sensors and intelligence – the use of 0-10V methods has significant tradeoffs. For instance, it is difficult to predict relative luminaire light output and input power at any particular control voltage, and performance across luminaires is inconsistent. This study characterizes 23 LED streetlights that claimed dimmability via a 0-10V interface, quantifies the performance variation found in market-available LED drivers, and explores the potential impact of the most recent 0-10V voluntary standard (ANSI C137.1-2022). Notably, the tested products were all manufactured prior to the release of this standard, and thus do not make compliance claims. Variation in response to 0-10V control voltages was expected to be more significant across different make/model luminaires than different units of the same make/model; the test population was structured based on this expectation. The 23 tested luminaires comprised 21 unique make/model streetlights from 14 different manufacturers. Three samples of one make/model streetlight were included in the test population to facilitate a limited exploration of unit-to-unit variation. The 21 unique make/model luminaires contained 20 unique make/model LED drivers from eight different driver manufacturers. Luminaire input power and current were measured at 11 control voltages (0.5 V and 1–10 V in 1 V increments).

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Upgrading Linear Fluorescent Fixtures to LED in Schools

Lighting is a key component to creating a functional and high-quality learning environment for students and staff. Light-emitting diode or LED lighting fixtures have gained traction in common commercial building applications and quality replacement options for common fixture types are widely available. Compared to most fluorescent lighting systems, using LEDs can reduce energy consumption and therefore decrease carbon dioxide emissions, reduce maintenance and operation cost, and improve the visual appearance and lighting quality of the classroom and school environments. When additional controls are considered, more energy can be saved and some controls, like dimming, can offer amenities to occupants. As LEDs become an even more prominent lighting technology, fluorescent equipment may become challenging or expensive to replace. Additionally, school buildings are typically in use for many decades; maintaining a long-term view can be important when deciding which upgrade path to take. This fact sheet provides guidance on the various factors to consider when deciding on an LED upgrade for fluorescent lighting systems.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗