High performance Nb Josephson Devices for Petaflops Computing
In this paper, we review the state of the art of Nb circuit fabrication and discuss the requirements for significantly improving circuit density and speed.
superconducting↗
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New quantum oscillations in current driven small junctions
The response of current-biased Josephson and normal tunnel junctions (JJs and NTJs) such as those fabricated by Voss and Webb (1981) is predicted from a quantum-mechanical description based on the observation that the response of a current-driven open system is equivalent to that of a closed system subject to an external time-dependent voltage bias. Phenomena expected include voltage oscillations with no dc voltage applied, inverse Shapiro steps of dc voltage in the presence of microwave radiation, voltage oscillation in a JJ and an NTJ coupled by a capacitance to a current-biased junction, JJ voltage oscillation frequency = I/e rather than I/2e, and different NTJ resistance than in the voltage-driven case. The effects require approximate experimental parameter values Ic = 15 nA, C = 1 fF, and T much less than 0.4 K for JJs and Ic = a few nA, C = 1 fF, and R = 3 kiloohms for 100-microV inverse Shapiro steps at 10 GHz in NTJs.
Ben-Jacob, E.↗
Interaction of the AC Josephson current surface plasmons.
LF surface plasmons in tunnel junctions coupling to AC Josephson current, discussing I-V characteristics
Economou, E. N.↗
A 100 GHz Josephson mixer using resistively-shunted Nb tunnel junctions
The authors describe preliminary mixer results using resistively shunted Nb/AlO(x)/Nb tunnel junctions in a 100-GHz waveguide mixer mount. The mixer utilizes robust, lithographically defined devices which have nonhysteretic I-V curves. A receiver temperature of 390 K (DSB) has been obtained with a conversion loss of -6.5 dB. The receiver's behavior agrees qualitatively with the behavior predicted by the resistively shunted junction model. Substantial improvements in performance are expected with the use of better-optimized shunted junctions, and numerical simulations suggest that, if devices with higher ICRN (critical current-normal state resistance) products can be obtained, Josephson effect mixers could be competitive with SIS mixers at high frequencies.
Schoelkopf, R. J.↗
Far infrared heterodyne systems
Three far infrared detectors, the InSb hot electron bolometer, the GaAs Schottky diode and the Josephson point contact junction, were incorporated as mixers into sensitive heterodyne systems. The performances of existing heterodyne receivers/radiometers using these detectors are described and compared. Other applications of submillimeter heterodyne techniques are discussed.
Tannenwald, P. E.↗
High-T(sub c) Superconductor-Normal-Superconductor Junctions with Polyimide-Passivated Ambient Temperature Edge Formation
The ability to controllably fabricate High-Temperature Superconductor (HTS) S-Normal-S (SNS) Josephson Juntions (JJ's) enhances the possibilities fro many applications, including digital circuits, SQUID's, and mixers. A wide variety of approaches to fabricating SNS-like junctions has been tried and analyzed in terms of proximity effect behavior.
HTS SNS Josephson Junction JJ polyimide films poly↗
(abstract) Epitaxial High-T(sub c) SNS Weak Links on Silicon-on-Sapphire Substrates
High-T(sub c) SNS weak links are expected to prove useful as high frequency sources and detectors. Recent studies with low-T(sub c) Josephson mixers using shunted tunnel junctions at 100 GHz show good initial performance, and modeling suggests that these results should extrapolate to higher frequencies if larger I(sub c)R(sub n) products can be achieved. Progress on this work will be reported.
high frequency sources detectors Josephson silicon↗
All-YBa2Cu3O(7-x) edge-geometry weak links
High quality YBa2Cu3O(7-x)/normal-metal/YBa2Cu3O(7-x) edge-geometry weak links are fabricated using nonsuperconducting Y-Ba-Cu-O barrier layers deposited by laser ablation at reduced growth temperatures. Devices incorporating 25-100-A-thick barrier layers exhibit current-voltage characteristics consistent with the resistively-shunted-junction model, as well as ac Josephson steps. Magnetic field modulation of the critical currents shows Fraunhofer-like behavior with a periodicity which scales with device area. The critical currents vary exponentially with barrier thickness indicating an effective normal metal coherence length of 20 A. The average resistances scale linearly with Y-Ba-Cu-O interlayer thickness and device area. The scaling behavior of the device parameters combined with the well-behaved magnetic field modulation of the critical currents demonstrates good barrier-layer uniformity with low pinhole densities. Near the transition temperature, the critical currents exhibit a temperature dependence proportional to (1 - T/Tc) squared.
Hunt, B. D.↗
Noise in Josepson effect mixers and the RSJ model
Josephson effect mixers have previously been observed to display 'excess' noise both in experiments with point contacts and in numerical simulations using the resistively shunted junction (RSJ) model. This excess noise causes the mixer noise temperature to be a factor of typically 20-100 times the physical temperature of the device. Previously, this excess was ascribed to conversion from unwanted sidebands of the local oscillator and Josephson frequencies and their harmonics. Our numerical modeling of the RSJ equations has led to a new understanding of the excess noise, which is simply due to the intrinsic Josephson oscillations of the device. In addition, we have extended the modeling to include the previously ignored case of finite device capacitance (i.e. RSJ capacitance parameter beta(sub c) does not equal 0, which is more realistic for lithographically defined Josephson such as shunted tunnel junctions or SNS bridges. For some cases, this yields an improvement of a factor of two in noise temperature from the zero capacitance models. We will discuss the device parameters which optimize the mixer performance for frequencies approaching the characteristic frequency of the device, which is given by the Josephson frequency at the I(sub c)R(sub n) voltage (nu = 2eI(sub c)R(sub n)/h). These modeling results predict good conversion efficiency and a noise temperature within a factor of a few of the physical temperature. Experiments are in progress to determine the accuracy of this modeling using a waveguide mixer at 100 GHz with optimized, resistively shunted Nb tunnel junctions. If the modeling results are valid, they are particularly encouraging for mixers in the submillimeter regime, given the possibility of obtaining non-hysteretic Josephson devices with I(sub c)R(sub n) products in excess of a millivolt, using for instance, high-T(sub c) SNS bridges. We discuss the modifications to the classical RSJ model which are necessary in the quantum regime (h nu greater than kT), and conclude the Josephson mixers may attain noise temperatures less than ten times the quantum limit at high frequencies.
Schoelkopf, R.↗
Geometrical dependence of the maximum dc Josephson current
Josephson maximum DC current plot for linear overlap junctions, discussing junction area geometry to current perimetric proportionality
Stuehm, D. L.↗
Method Producing an SNS Superconducting Junction with Weak Link Barrier
A method of producing a high temperature superconductor Josephson element and an improved SNS weak link barrier element is provided. A YBaCuO superconducting electrode film is deposited on a substrate at a temperature of approximately 800 C. A weak link barrier layer of a nonsuperconducting film of N-YBaCuO is deposited over the electrode at a temperature range of 520 C. to 540 C. at a lower deposition rate. Subsequently a superconducting counter-electrode film layer of YBaCuO is deposited over the weak link barrier layer at approximately 800 C. The weak link barrier layer has a thickness of approximately 50 A and the SNS element can be constructed to provide an edge geometry junction.
Hunt, Brian D.↗
Measurements of noise in Josephson-effect mixers
We present new heterodyne receiver results obtained at 100 GHz using resistively-shunted Nb and NbN tunnel junctions. In addition, we have carried out accurate measurements of the available noise power of these devices at the L-band (1.5 GHz) IF (infrasonic) frequency. Both the heterodyne and the output noise measurements show that the noise of these devices can be a factor of five or more higher than that predicted by the simple current-biased RSJ model. The noise approaches the appropriate thermal or thermal and shot noise limits for bias voltages where the nonlinearity is not strong (i.e., V greater than I(sub C)R(sub N)), but as expected from the RSJ model, can be significantly higher at the low voltages where the mixers are typically biased. The bias voltage dependence of the noise shows structure which is associated with resonances in the RF embedding circuit. Surprisingly, we find that changes in the high-frequency (100 GHz) impedance presented to the junction can dramatically affect the magnitude and voltage dependence of the low-frequency (1.5 GHz) noise. This emphasizes the necessity of very closely matching the junction to free space over a wide frequency range.
NOISE MEASUREMENT↗
Superconducting Al-trilayer tunnel junctions for use as X-ray detectors
Photolithographic techniques have been developed to fabricate high-quality Al-Al oxide-Al superconducting tunnel junctions for use in X-ray detectors. These devices are designed to incorporate about 1-micron-thick superconducting X-ray absorbers for the detection of less than 10-keV single photons. In an effort to increase energy resolution, superconductor bandgap engineering with lateral and vertical trapping has been used to shorten quasi-particle tunneling times and diffusion lengths and to prevent quasi-particle diffusion away from the tunnel junction. Methods that have been developed for overcoming materials imcompatibility and device degradation upon thermal cycling are reported. The authors also report on the use of a nonrectangular tunnel junction geometry which reduces the magnetic field needed to suppress the Josephson current for stable biasing. Work in progress to measure the energy resolution of these X-ray detectors at 0.35 K is also discussed.
Gaidis, M. C.↗
Characterization of NbN films and tunnel junctions
Properties of NbN films and NbN/MgO/NbN tunnel junctions are discussed. NbN junctions are being developed for use in high-frequency, SIS quasiparticle mixers. To properly design mixer circuits, junction and film properties need to be characterized. The specific capacitance of NbN/MgO/NbN junctions has been measured as a function of the product of the normal-state resistance and the junction area (RnA), and it is found to vary by more than a factor of two (35-85 fF/sq microns) over the range of RnA measured (1000-50 ohm sq microns). This variation is important because the specific capacitance determines the RC speed of the tunnel junction at a given RnA value. The magnetic penetration depth of NbN films deposited under different conditions is also measured. The magnetic penetration depth affects the design of microstrip line used in RF tuning circuits. Control of the magnetic penetration depth is necessary to fabricate reproducible tuning circuits. Additionally, the critical current uniformity for arrays of 100 junctions has been measured. Junction uniformity will affect the design of focal-plane arrays of SIS mixers. Finally, the relevance of these measurements to the design of Josephson electronics is discussed.
Stern, J. A.↗
A capacitively shunted superconducting microbridge
A superconducting microbridge small enough to exhibit the Josephson effect has been shunted by a large external capacitance. Surprisingly little capacitive hysteresis is observed in its I-V characteristic. Prominent subgap structures are seen. The resistively shunted junction (RSJ) model fails to explain the observations.
Chiao, R. Y.↗
Effect of an applied magnetic field on the performance of a SIS receiver near 300 GHz
A superconductor-insulator-superconductor (SIS) receiver has been successfully constructed and tested for operation at 265 - 280 GHz using 1 micron/sq area Nb-AlO(x)-Nb tunnel junctions fabricated at Stony Brook. The best performance to date is a double sideband (DSB) receiver noise temperature of 129 K at 278 GHz. It is found that suppression of the Josephson pair currents with a magnetic field is essential for good performance and a stable dc bias point. Fields as high as 280 gauss have been used with no degradation of mixing performance. The improvement in the intermediate frequency output stability with progressively increasing magnetic fields is illustrated.
Mallison, W. H.↗
Design of Cryocoolers for Microwatt Superconducting Devices
The primary applications of the cryocoolers are for cooling various Josephson devices such as SQUID magnetometers and amplifiers, voltage standards, and microwave mixers and detectors. The common feature of these devices is their extremely low inherent bias power requirement, of the order of 10/1 W per junction. This provides the possibility of designing compact, low-power cryocoolers for these applications. Several concepts were explored and a number of laboratory model cryocoolers were built. These include low-power nonmagnetic regenerative machines of the Stirling or Gifford-McMahon type, three or four-stage Joule-Thomson machines, liquid-helium dewars with integral small cryocoolers to reduce the evaporation rate, and liquid-helium dewars with integral continuously or intermittently operated small helium liquefiers to permit operation of cryogenic devices for indefinite time periods.
Zimmerman, J. E.↗
YBa2Cu3O(7-delta)/Au/Nb sandwich geometry SNS weak links on c-axis oriented YBa2Cu3O(7-delta)
Sandwich geometry superconductor/normal metal/superconductor structures have been fabricated on LaAlO3 and cubic zirconia with laser-ablated, c-axis-oriented YBa2Cu3O(7-delta) base electrodes, 100-600 A of Au, and Nb counter electrodes, all formed in situ without breaking vacuum. Junctions range in size from 5 to 50 micron on a side. Four probe I-V measurements at 4.2 K show RnA products as low as 6 x 10 to the -9th sq cm and critical current densities up to 5.2 kA/sq cm. AC Josephson steps were observed with the application of 10-GHz radiation. The temperature dependence of Jc and the observation of the AC Josephson effect suggest that true supercurrents are present and that they do indeed represent the characteristics of the YBa2Cu3O(7-delta)/Au/Nb structure. The best results were obtained when the devices were annealed at about 450 C in O2 for 30 min after Au deposition.
Foote, M. C.↗