SEARCH · Engineering Papers

Results for “JUNCTION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6

All sources NASA NTRS DOE OSTI

DOE OSTI2025

Magnetic force microscopy revealing long-range room temperature stable molecule bridge-induced magnetic ordering on magnetic tunnel junction (MTJ) pillars

Magnetic tunnel junctions (MTJs) can integrate novel single molecular device elements to overcome long-standing fabrication challenges, thus unlocking their novel potential. This study employs magnetic force microscopy (MFM) to demonstrate that organometallic molecules, when placed between two ferromagnetic electrodes along cross-junction shaped MTJ edges, dramatically altered the magnetic properties of the electrodes, affecting areas several hundred microns in size around the molecular junction vicinity at room temperature. These findings are supported by magnetic resonance and magnetometer studies on ∼7000 MTJ pillars. MFM on the pillar sample showed an almost complete disappearance of the magnetic contrast. The spatial magnetic image suggests that molecular channels significantly impacted the spin density of states in the ferromagnetic electrodes. This advancement in MTJ-based molecular devices paves the way for a new generation of commercially viable logic and memory devices controlled by molecular quantum states at near-room temperatures.

Tyagi, Pawan (ORCID:0000000275411344)↗

DOE OSTI2026

Predicted third-order sweet spots for phi-junction Josephson parametric amplifiers

Hybrid superconductor-semiconductor nanowire Josephson junctions exhibit skewed and phi-shifted current phase relations when an in-plane magnetic field is applied along the weak link's spin-orbit effective field direction. These junctions can have an asymmetric Josephson potential with odd-order nonlinearities. A dominant third-order nonlinearity can be achieved by tuning the magnetic field to a sweet spot. Sweet spots persist when higher order Josephson harmonics are included. This makes it possible to have a single Josephson junction dipole element with three-wave mixing capability, which is favorable for pump-efficient amplification. Electrostatic gate tunability of the semiconductor weak link can make it operable within an extended range of working frequencies, and the inclusion of micromagnets can facilitate near-zero magnetic field operation.

Reza, Tasnum [Univ. of Pittsburgh, PA (United Stat↗

NASA NTRS1973

Josephson junction interference grating.

The maximum current through multiple Josephson structures as a function of applied magnetic field is presented. Particular emphasis is placed on the Josephson penetration depth effects and geometrical considerations. The symmetrical and asymmetrical current feed two-, three-, four-, and five-junction gratings are analyzed and discussed. The Josephson penetration depth is shown to control the amplitude of the interference and diffraction patterns of the interference grating. In addition the interior-junction-length/interference-loop-area product is shown to control the operating mode of the interference grating. The dependence of the magnetic field sensitivity and interference pattern amplitude on the number of junctions is discussed.

Stuehm, D. L.↗

NASA NTRS1974

Surface-state spectra from thick-oxide MOS tunnel junctions

The conductance and capacitance of thick-oxide MOS tunnel junctions (SiO2 thickness 40 to 65 A) have been measured from 35 Hz to 210 kHz. It is demonstrated that the use of a thick-oxide MOS tunnel junction makes it possible to obtain the surface-state data throughout the whole silicon band gap with better resolution and better sensitivity than the conventional MOS capacitance techniques. A slight departure from equilibrium may occur in the voltage range where large tunnel current flows. Corrections to the energy scale must be made in this voltage range. A method for the evaluation of the junction quality is discussed. The simplified equivalent circuits necessary for the calculation of surface-state data are constructed under various bias conditions by an approach different from that used in a previously published work. The present work supports the model that at least some of the observed surface states are a consequence of the diffusion of contact metals into the oxide.

Ma, T. P.↗

NASA NTRS1974

The SNS Josephson junction with a third terminal

Discussion of the operating characteristics of a three-terminal thin-film SNS Josephson junction whose diameter is much greater than the electron pair coherence length in the N metal. It is shown that a junction of this type is essentially a two-terminal device even though the third terminal of the junction supplies the control current. The mechanism underlying this finding is discussed.

Prans, G. P.↗

NASA NTRS1975

Studies of silicon PN junction solar cells

Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed.

Lindholm, F. A.↗

NASA NTRS1977

Nonlinear optical response of metal-barrier-metal junctions

The optical response of metal-barrier-metal (MBM) junctions is discussed, with emphasis on the nonlinearity of response associated with reversal of polarity as optical intensity is increased. This nonlinear behavior can be used to measure correlation functions of optical pulses or to generate ultrashort electrical pulses. Expressions for the current flowing through the insulating barrier (junction), and for the rectification current, are given. Pulse signal and polarity of the electrical pulse evolves as the junction bias is varied about the null-signal bias. The apparatus used to obtain rectification pulse signals is described; the calculated evolution of the rectified pulse shape is found to correspond to that of pulse signals obtained experimentally. The generation of pulses six orders of magnitude smaller than a previously-obtained instrument-limited 1.6 nanosecond pulse has been observed.

Fan, B.↗

NASA NTRS1977

Developments in vertical-junction silicon solar cells

Non-reflective vertical junction silicon cells provide high conversion efficiency radiation-resistant solar cells. New techniques of oxidation growth and the use of photolithography enable the use of an orientation dependent etch producing grooves 5 to 10 microns wide over 100 microns deep. These silicon wafers are then processed into solar cells with all of the processes performed at temperatures compatible with producing high efficiency solar cells. Most of the photogenerated carriers are created in the walls where they are within a few microns of the collecting junction. Consequently, degradation of carrier diffusion length due to radiation has a considerably reduced effect on collection efficiency. These 2 cm x 2 cm vertical junction silicon solar cells have exceeded 13% AMO efficiency and have shown superior radiation resistance.

Lindmayer, J.↗

NASA NTRS1978

Recovery of shallow junction GaAs solar cells damaged by electron irradiation

Solar cells operated in space are subject to degradation from electron and proton radiation damage. It has been found that for deep junction p-GaAlAs/p-GaAs solar cells some of the electron radiation damage is removed by annealing the cells at 200 C. The reported investigation shows that shallow junction p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells irradiated with 1 MeV electrons show a more complete recovery of short-circuit current than do the deep junction cells. The heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells studied were fabricated using the etch-back epitaxy process.

Walker, G. H.↗

NASA NTRS1978

Photoinduced currents in metal-barrier-metal junctions

The fabrication and application of metal-barrier-metal tunneling junctions for radiative interactions are discussed. Particular attention is given to the photolithographic fabrication of small area devices and the coupling to such devices via surface plasmon waves which play an important role at infrared and optical frequencies. It has been shown that the junction electron tunneling currents can be strongly coupled to surface plasmon junction modes, and spontaneous and stimulated emission of the latter are possible as well as nonlinear interactions. Finally, results demonstrating the photo-excitation of electrons with subsequent tunneling induced by ultraviolet radiation are presented. It is estimated that quantum efficiencies of the order of 5% and higher are possible in the ultraviolet region.

Guedes, M. P.↗

NASA NTRS1981

An oven for many thermocouple reference junctions

Compact, lightweight oven designed with geometric and heating symmetry holds many junctions at stable temperature. Oven has cylindrical wall with all points equidistant from heating coil. Thermocouple junctions are inserted in holes bored radially in wall. Sensor controls power supplied to heating coil, maintaining cylinder wall and junctions at constant temperature.

Leblanc, L. P.↗

NASA NTRS1980

A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

Chi, J. Y.↗

NASA NTRS1981

Analysis of the photo voltage decay /PVD/ method for measuring minority carrier lifetimes in P-N junction solar cells

The photo voltage decay (PVD) method for the measurement of minority carrier lifetimes in P-N junction solar cells with cell thickness comparable to or even less than the minority carrier diffusion length is examined. The method involves the generation of free carriers in the quasi-neutral bulk material by flashes of light and the monitoring of the subsequent decay of the induced open-circuit voltages as the carriers recombine, which is dependent on minority carrier recombination lifetime. It is shown that the voltage versus time curve for an ordinary solar cell (N(+)-P junction) is proportional to the inverse minority carrier lifetime plus a factor expressing the ratio of diffusion length to cell thickness. In the case of an ideal back-surface-field cell (N(+)-P-P(+) junction) however, the slope is directly proportional to the inverse minority carrier lifetime. It is noted that since most BSF cells are not ideal, possessing a sizable back surface recombination velocity, the PVD measurements must be treated with caution and supplemented with other nonstationary methods.

Von Roos, O.↗

NASA NTRS1984

Development and fabrication of a solar cell junction processing system

A processing system capable of producing solar cell junctions by ion implantation followed by pulsed electron beam annealing was developed and constructed. The machine was to be capable of processing 4-inch diameter single-crystal wafers at a rate of 10(7) wafers per year. A microcomputer-controlled pulsed electron beam annealer with a vacuum interlocked wafer transport system was designed, built and demonstrated to produce solar cell junctions on 4-inch wafers with an AMI efficiency of 12%. Experiments showed that a non-mass-analyzed (NMA) ion beam could implant 10 keV phosphorous dopant to form solar cell junctions which were equivalent to mass-analyzed implants. A NMA ion implanter, compatible with the pulsed electron beam annealer and wafer transport system was designed in detail but was not built because of program termination.

Source record↗

NASA NTRS1983

Quantum shot noise in tunnel junctions

The current and voltage fluctuations in a normal tunnel junction are calculated from microscopic theory. The power spectrum can deviate from the familiar Johnson-Nyquist form when the self-capacitance of the junction is small, at low temperatures permitting experimental verification. The deviation reflects the discrete nature of the charge transfer across the junction and should be present in a wide class of similar systems.

Ben-Jacob, E.↗

NASA NTRS1984

Bipolar junction transistor models for circuit simulation of cosmic-ray-induced soft errors

This paper examines bipolar junction transistor models suitable for calculating the effects of large excursions of some of the variables determining the operation of a transistor. Both the Ebers-Moll and Gummel-Poon models are studied, and the junction and diffusion capacitances are evaluated on the basis of the latter model. The most interesting result of this analysis is that a bipolar junction transistor when struck by a cosmic particle may cause a single event upset in an electronic circuit if the transistor is operated at a low forward base-emitter bias.

Benumof, R.↗

NASA NTRS1986

Improved Solar-Cell Tunnel Junction

Efficiency of multiple-junction silicon solar cells increased by inclusion of p+/n+ tunnel junctions of highly doped GaP between component cells. Relatively low recombination velocity at GaP junction principal reason for recommending this material. Relatively wide band gap also helps increase efficiency by reducing optical losses.

Daud, T.↗

NASA NTRS1986

Dot junction solar cells

A design of solar cells with reduced junction area on the cell surface is investigated for reduction of saturation current and increase in open-circuit voltage. Equidiameter dot junctions distributed across the surface of the cell offer an efficient alternative, with variations in dot diameter and in the spacing between dots giving the required variations in the ratio of junction area to total surface area. A simplified analysis for short-circuit current and other cell parameters, which enables cell design optimization, is presented. Experimental solar-cell performance results, as functions of different area ratios, are presented and compared with the model. It is shown that saturation current reduction is possible for achieving efficiencies as high as 18 percent in flat-plate terrestrial applications.

Daud, T.↗