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At least 109 records · Page 6

Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

The processing of wafer devices to form multilevel interconnects for microelectronic circuits is described. The method is directed to performing the sequential steps of etching the via, removing the photo resist pattern, back sputtering the entire wafer surface and depositing the next layer of interconnect material under common vacuum conditions without exposure to atmospheric conditions. Apparatus for performing the method includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a DC magnetron sputtering system. A gas inlet is provided in the chamber for the introduction of various gases to the vacuum chamber and the creation of various gas plasma during the sputtering steps.

Routh, D. E.

Monolithic microwave integrated circuits: Interconnections and packaging considerations

Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.

Bhasin, K. B.

Effect of Interfacial characteristics of metal clad polymeric substrates on electrical high frequency interconnection performance

Etched metallic conductor lines on metal clad polymeric substrates are used for electronic component interconnections. Significant signal losses are observed for microstrip conductor lines used for interconnecting high frequency devices. At these frequencies, the electronic signal travels closer to the metal-polymer interface due to the skin effect. Copper-teflon interfaces were characterized by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) to determine the interfacial properties. Data relating roughness of the copper film to signal losses was compared to theory. Films used to enhance adhesion are found, to contribute to these losses.

Bhasin, K. B.

Rupture testing for the quality control of electrodeposited copper interconnections in high-speed, high-density circuits

Printed Wiring Multilayer Board (PWMLB) structures for high speed, high density circuits are prone to failure due to the microcracking of electrolytic copper interconnections. The failure can occur in the foil that makes up the inner layer traces or in the plated through holes (PTH) deposit that forms the layer to layer interconnections. It is shown that there are some distinctive differences in the quality of Type E copper and that these differences can be detected before its use in a PWMLB. It is suggested that the strength of some Type E copper can be very low when the material is hot and that it is the use of this poor quality material in a PWMLB that results in PTH and inner layer microcracking. Since the PWMLB failure in question are induced by a thermal stress, and since the poorer grades of Type E materials used in these structures are susceptible to premature failure under thermal stress, the use of elevated temperature rupture and creep rupture testing is proposed as a means for screening copper foil, or its PTH equivalent, in order to eliminate the problem of Type E copper microcracking in advanced PWMLBs.

Zakraysek, Louis

A covariance analysis algorithm for interconnected systems

A covariance analysis algorithm for propagation of signal statistics in arbitrarily interconnected nonlinear systems is presented which is applied to six-degree-of-freedom systems. The algorithm uses statistical linearization theory to linearize the nonlinear subsystems, and the resulting linearized subsystems are considered in the original interconnection framework for propagation of the signal statistics. Some nonlinearities commonly encountered in six-degree-of-freedom space-vehicle models are referred to in order to illustrate the limitations of this method, along with problems not encountered in standard deterministic simulation analysis. Moreover, the performance of the algorithm shall be numerically exhibited by comparing results using such techniques to Monte Carlo analysis results, both applied to a simple two-dimensional space-intercept problem.

Cheng, Victor H. L.

Open System Interconnection - NASA program communications of the future

Open Systems Interconnection (OSI) standards are being developed by the ISO and the Consultative Committee on International Telephone and Telegraph with the support of industry. These standards are being developed to allow the interconnecting of computer systems and the interworking of applications such that the applications can be independent of any equipment manufacturer. Significant progress has been made, and the establishment of government OSI standards is being considered. There is considerable interest within NASA in the potential benefits of OSI and in communications standards in general. The OSI standards are being considered for possible application in the Space Station onboard data management system. The OSI standards have reached a high level of maturity, and it is now imperative that NASA plan for future migration to OSI where appropriate.

Brady, Charles D.

Surface emitting lasers for optical circuitry - Optical interconnect technology

Surface emitting (SE) lasers and their application in VLSI optical interconnect networks are considered. In particular, the advantages provided by SE lasers in optical interconnect circuits and monolithic integration are discussed. Some of the requirements, such as wavelength stability, power dissipation, emission angle, size, etc., are compared with respect to conventional laser diodes. It is noted that the operation of SE lasers will be critically dependent on the properties of the feedback reflectors. Experimental measurements of reflection spectra on AlGaAs/GaAs multilayer reflectors and InAlAs/InGaAs etalons formed with molecular beam epitaxy (MBE) are presented.

Yu, P. K. L.

Hybrid interconnection structures for real-time parallel processing

The use of hybrid interconnection structures that combine link connections and bus connections for real-time parallel processing is discussed. Idealistic parallel computation models for two real-time computing applications are described with attention given to a tightly coupled network model for object tracking and a network model for image processing. Consideration is given to the following different interconnection structures: the crossbar, the hypercube, the circular linked array, and the bus array.

Kim, K. H.

Five-Segment Interconnection For Electromigration Tests

Proposed integrated-circuit conductive pattern intended for use in electromigration lifetime testing of interconnection lines of integrated circuits. Designed for collection of statistics on electromigration from smallest possible area. Includes 5 interconnection segments with Kelvin voltage taps, with total of 12 contact pads, and provides for simultaneous measurements on all of segments. Attempts to minimize thermal gradients within each segment and conforms to guidelines on electromigration test structures promulgated by National Institute of Standards and Technology (NIST).

Hannaman, David J.

Comparative evaluation of optical waveguides as alternative interconnections for high performance packaging

A detailed comparison between optical and electrical interconnections is presented, with emphasis on advantages and drawbacks of optical link utilization. The impact of attenuation, dispersive degradation, and fan out on signal integrity is discussed. Reflections from discontinuities are taken into account in the section on fan out. According to our results, there is no obvious advantage of using optical interconnections for the distribution of digital signals containing significant frequency components in excess of 10 GHz, unless substantial distances are involved, for which low dispersion optical waveguides could provide a solution. The implementation of a polyimide optical waveguide in the MCNC package is discussed.

Schacham, S. E.

Reconfigurable optical interconnection network for multimode optical fiber sensor arrays

A single-source, single-detector architecture has been developed to implement a reconfigurable optical interconnection network multimode optical fiber sensor arrays. The network was realized by integrating LiNbO3 electrooptic (EO) gratings working at the Raman Na regime and a massive fan-out waveguide hologram (WH) working at the Bragg regime onto a multimode glass waveguide. The glass waveguide utilized the whole substrate as a guiding medium. A 1-to-59 massive waveguide fan-out was demonstrated using a WH operating at 514 nm. Measured diffraction efficiency of 59 percent was experimentally confirmed. Reconfigurability of the interconnection was carried out by generating an EO grating through an externally applied electric field. Unlike conventional single-mode integrated optical devices, the guided mode demonstrated has an azimuthal symmetry in mode profile which is the same as that of a fiber mode.

Chen, R. T.

TAB interconnects for space concentrator solar cell arrays

The Boeing Company has evaluated the use of Tape Automated Bonding (TAB) and Surface Mount Technology (SMT) for a highly reliable, low cost interconnect for concentrator solar cell arrays. TAB and SMT are currently used in the electronics industry for chip interconnects and printed circuit board assembly. TAB tape consists of sixty-four 3-mil/1-oz tin-plated copper leads on 8-mil centers. The leads are thermocompression gang bonded to GaAs concentrator solar cell with silver contacts. This bond, known as an Inner Lead Bond (ILB), allows for pretesting and sorting capability via nondestruct wire bond pull and flash testing. Destructive wire pull tests resulted in preferred mid-span failures. Improvements in fill factor were attributed to decreased contact resistance on TAB bonded cells. Preliminary thermal cycling and aging tests were shown excellent bond strength and metallurgical results. Auger scans of bond sites reveals an Ag-Cu-Tin composition. Improper bonds are identified through flash testing as a performance degradation. On going testing of cells are underway at Lewis Research Center. SMT techniques are utilized to excise and form TAB leads post ILB. The formed leads' shape isolates thermal mismatches between the cells and the flex circuit they are mounted on. TABed cells are picked and placed with a gantry x-y-z positioning system with pattern recognition. Adhesives are selected to avoid thermal expansion mismatch and promote thermal transfer to the flex circuit. TAB outer lead bonds are parallel gap welded (PGW) to the flex circuit to finish the concentrator solar cell subassembly.

Avery, J.

A reference model for space data system interconnection services

The widespread adoption of standard packet-based data communication protocols and services for spaceflight missions provides the foundation for other standard space data handling services. These space data handling services can be defined as increasingly sophisticated processing of data or information received from lower-level services, using a layering approach made famous in the International Organization for Standardization (ISO) Open System Interconnection Reference Model (OSI-RM). The Space Data System Interconnection Reference Model (SDSI-RM) incorporates the conventions of the OSIRM to provide a framework within which a complete set of space data handling services can be defined. The use of the SDSI-RM is illustrated through its application to data handling services and protocols that have been defined by, or are under consideration by, the Consultative Committee for Space Data Systems (CCSDS).

Pietras, John

Initial results for the silicon monolithically interconnected solar cell product

This proprietary technology is based on AstroPower's electrostatic bonding and innovative silicon solar cell processing techniques. Electrostatic bonding allows silicon wafers to be permanently attached to a thermally matched glass superstrate and then thinned to final thicknesses less than 25 micron. These devices are based on the features of a thin, light-trapping silicon solar cell: high voltage, high current, light weight (high specific power) and high radiation resistance. Monolithic interconnection allows the fabrication costs on a per watt basis to be roughly independent of the array size, power or voltage, therefore, the cost effectiveness to manufacture solar cell arrays with output powers ranging from milliwatts up to four watts and output voltages ranging from 5 to 500 volts will be similar. This compares favorably to conventionally manufactured, commercial solar cell arrays, where handling of small parts is very labor intensive and costly. In this way, a wide variety of product specifications can be met using the same fabrication techniques. Prototype solar cells have demonstrated efficiencies greater than 11%. An open-circuit voltage of 5.4 volts, fill factor of 65%, and short-circuit current density of 28 mA/sq cm at AM1.5 illumination are typical. Future efforts are being directed to optimization of the solar cell operating characteristics as well as production processing. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. These features make this proprietary technology an excellent candidate for a large number of consumer products.

Dinetta, L. C.

High-Performance Computing for the Electromagnetic Modeling and Simulation of Interconnects

The electromagnetic modeling of packages and interconnects plays a very important role in the design of high-speed digital circuits, and is most efficiently performed by using computer-aided design algorithms. In recent years, packaging has become a critical area in the design of high-speed communication systems and fast computers, and the importance of the software support for their development has increased accordingly. Throughout this project, our efforts have focused on the development of modeling and simulation techniques and algorithms that permit the fast computation of the electrical parameters of interconnects and the efficient simulation of their electrical performance.

Schutt-Aine, Jose E.

Interconnections For Stacked Parallel Computer Modules

Concept for interconnecting modules in parallel computers leads to cheaper, smaller, lighter, lower-power computing systems for aerospace, industrial, business, and consumer applications. Computer modules stacked and interconnected in various configurations. Connections among stacks controlled by switching within gateways and/or by addresses on buses.

Johannesson, Richard T.

Weaves as an Interconnection Fabric for ASIM's and Nanosatellites

Many of the micromachines under consideration require computer support, indeed, one of the appeals of this technology is the ability to intermix mechanical, optical, analog, and digital devices on the same substrate. The amount of computer power is rarely an issue, the sticking point is the complexity of the software required to make effective use of these devices. Micromachines are the nano-technologist's equivalent of 'golden screws'. In other words, they will be piece parts in larger assemblages. For example, a nano-satellite may be composed of stacked silicon wafers where each wafer contains hundreds to thousands of micromachines, digital controllers, general purpose computers, memories, and high-speed bus interconnects. Comparatively few of these devices will be custom designed, most will be stock parts selected from libraries and catalogs. The novelty will lie in the interconnections. For example, a digital accelerometer may be a component part in an adaptive suspension, a monitoring element embedded in the wrapper of a package, or a portion of the smart skin of a launch vehicle. In each case, this device must inter-operate with other devices and probes for the purposes of command, control, and communication. We propose a software technology called 'weaves' that will permit large collections of micromachines and their attendant computers to freely intercommunicate while preserving modularity, transparency, and flexibility. Weaves are composed of networks of communicating software components. The network, and the components comprising it, may be changed even while the software, and the devices it controls, are executing. This unusual degree of software plasticity permits micromachines to dynamically adapt the software to changing conditions and allows system engineers to rapidly and inexpensively develop special purpose software by assembling stock software components in custom configurations.

Gorlick, Michael M.

Electrical and Optical Performance Characteristics of 0.74-eV p/n InGaAs Monolithic Interconnected Modules

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74-eV InGaAs, have demonstrated V(sub oc) = 3.2 volts, J(sub sc) = 70 mA/sq cm, and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (greater than 2 micron) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55-eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

Wilt, David M.