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At least 109 records · Page 6

Developing affordable and efficient heating devices for enhanced live cell imaging in confocal microscopy

Temperature control is crucial for live cell imaging, particularly in studies involving plant responses to high ambient temperatures and thermal stress. This study presents the design, development, and testing of two cost-effective heating devices tailored for confocal microscopy applications: an aluminum heat plate and a wireless mini-heater. The aluminum heat plate, engineered to integrate seamlessly with the standard 160 mm × 110 mm microscope stage, supports temperatures up to 36°C, suitable for studies in the range of non-stressful warm temperatures (e.g., 25-27°C forArabidopsis thaliana) and moderate heat stress (e.g., 30-36°C forA. thaliana). We also developed a wireless mini-heater that offers rapid, precise heating directly at the sample slide, with a temperature increase rate over 30 times faster than the heat plate. The wireless heater effectively maintained target temperatures up to 50°C, ideal for investigating severe heat stress and heat shock responses in plants. Both devices performed well in controlled studies, including the real-time analysis of heat shock protein accumulation and stress granule formation inA. thaliana. Our designs are effective and affordable, with total construction costs lower than $300. This accessibility makes them particularly valuable for small laboratories with limited funding. Future improvements could include enhanced heat uniformity, humidity control to mitigate evaporation, and more robust thermal management to minimize focus drift during extended imaging sessions. These modifications would further solidify the utility of our heating devices in live cell imaging, offering researchers reliable, budget-friendly tools for exploring plant thermal biology.

Plant Sciences

Infrared rocket observations.

IR telescope for rocket observations using liquid nitrogen coolant to eliminate terrestrial and telescope radiation, using InAs and InSb detectors

Harwit, M.

Technique for depositing silicon dioxide on indium arsenide improves adhesion

Planar array processing of indium arsenide wafers includes dicing into a prescribed geometry, then cleaning and drying, and finally pre-oxidizing in an oxygen atmosphere at 500 degrees C. The last step forms an oxide interface between the InAs surface and a glow discharge deposited layer of silicon dioxide.

Source record

Investigation of the Kramers-Kronig analysis - Revised optical constants of AgCl

White and Straley (1968) have reported room-temperature optical constants for AgCl that exhibit negative, unphysical dips at the band edge. Because Morrison (1961) also obtained such behavior for InAs, InSb, and GaAs, a study is made of the possible sources of this anomaly. An artifact of the experimental reflectance data near this energy is found to be responsible. No defect in the Kramers-Kronig transform or its use is implied, contrary to some suggestions. The corrected optical constants of AgCl were modified by about 10% up to 5 eV, whereas at higher energies they were barely affected. Thus Kramers-Kronig-deduced optical constants that exhibit unusual structure are not affected by this structure at other energies. The new AgCl results are presented, and assignments are briefly discussed.

Bauer, R. S.

Optimum bandgap of several III-V heterojunction solar cells

Results of computer analysis of AlAs/Ga(1-x)As n-on-p heterojunction solar cells are presented with particular consideration given to interface recombination effects. It is found that, for an AlAs window layer, GaAs appears to be the optimum semiconductor for the active layer. Furthermore, even if the interface recombination is neglected, GaAs comes so close to being the optimum III-V active layer material that the additional effort required to incorporate a few percent of InAs into the active layer appears to be much greater than any expected efficiency increase.

Sutherland, J. E.

Phase transitions in Group III-V and II-VI semiconductors at high pressure

The structures and transition pressures of Group III-V and II-VI semiconductors and of a pseudobinary system (Ga/x/In/1-x/Sb) have been investigated. Results indicate that GaP, InSb, GaSb, GaAs and possible AlP assume Metallic structures at high pressures; a tetragonal, beta-Sn-like structure is adopted by only InSb and GaSb. The rocksalt phase is preferred in InP, InAs, AlSb, ZnO and ZnS. The model of Van Vechten (1973) gives transition pressures which are in good agreement with measured values, but must be refined to account for the occurrence of the ionic rocksalt structure in some compounds. In addition, discrepancies between the theoretical scaling values for volume changes at the semiconductor-to-metal transitions are observed.

Yu, S. C.

Large volume multiple path nuclear lasing of /He-3/-Ar

Output power of 550 W has been achieved from a nuclear-pumped multiple path laser system containing (He-3)-Ar by using the (He-3)(n, p)3(H) nuclear reaction for power deposition. Lasing was achieved in Ar at 1790 nm. The complex beam profile was resolved by an InAs array detector. Laser output was directly proportional to thermal neutron flux, and also increased proportionally with increasing (He-3) pressure up to 292.6 kPa. The variation of the laser output power with the number of passes through the excited medium was found to peak at 5-7 passes.

De Young, R. J.

Method for refurbishing and processing parachutes

A system and method for refurbishing and processing parachutes is discussed including an overhead monorail conveyor system on which the parachute is suspended for horizontal conveyance. The parachute is first suspended in partially open tented configuration wherein open inspection of the canopy is permitted to remove debris and inspect all areas. Following inspection, the parachute is transported by the monorail conveyor to a washing and drying station with the parachute canopy mounted on the conveyor ina systematic arrangement which permits water and air to pass through the ribbonlike material of the canopy. Following drying of the parachute, the parachute is conveyed into an interior space where it is finally inspected and removed from the monorail conveyor and laid upon a table for folding.

Crowell, R. T.

Purely coronal flare-like variations

Quasiperiodic X-ray, UV, microwave, and metric-wave variations after a solar flare on November 6, 1980 are reported and analyzed, based on observational data from SMM (HXRBS, UVSP, HXIS), GOES-2, the 100-m radiotelescope at Bonn, and the Nancay radioheliograph. The maxima of the 13 brightenings observed are listed and characterized; a comparison is made with a 'normal' flare at 17:26 UT on the same day. The HXIS and UVSP data are discussed in terms of the physical properties, X-ray flux, O V flux, and H-alpha flux. The variations are found to be mainly thermal and purely coronal, with no chromospheric (H-alpha) participation (in contrast to the 17:26 flare). Since strong X-ray emissions were observed which should have involved the chromosphere through magnetic-field-line heat conduction, it is proposed that the variations wre produced ina coronal plasmoid magnetically separate from the chromosphere. A mechanism for the evolution of such a plasmoid from the upper loops of a giant X-ray arch is discussed. An iterative HXIS-image-deconvolution process is presented in an appendix.

Svestka, Z.

The atomic geometries of GaP(110) and ZnS(110) revisited - A structural ambiguity and its resolution

The atomic geometries of GaP(110) and ZnS(110) are reexamined using the R-factor minimization procedure, developed for GaAs(110) and previously applied to GaSb(110), ZnTe(110), InAs(110), and AlP(110), to analyze experimental elastic low-energy electron diffraction intensities. Unlike most of the earlier cases, both GaP(110) and ZnS(110) exhibit two distinct minimum-Rx structures which cannot be distinguished by analysis of the shapes of the intensity profiles alone. One region of best-fit structures exhibits top-layer displacements normal to the surface characterized by a small bond-length-conserving, top-layer rotation (omega aproximately 2-3 deg), a small relaxation of the top layer away from the surface, and a 10 percent expansion of the top-layer bond length. The other region of best-fit structures is the conventional one: nearly bond-length-conserving rotations of omega = 26-28 deg in the top layer and a small (approximately 0.1 A) contraction of the uppermost layer spacing. This ambiguity may be removed, however, by consideration of the integrated beam intensities. The conventional region of structural parameters provides a decisively better description of the relative magnitudes of the integrated beam intensities and hence is the preferred structure.

Duke, C. B.

Experiments with phase transitions at very high pressure

A diamond anvil cell is described which was developed for studying hydrogen and other materials to pressure above 100 PGa, including measurements at low temperature. The benefits of X-ray diffraction using synchrotron radiation and using a fixed anode source are examined as well as the optimization of X-ray diffraction at low temperature. A Ge diode detector was incorporated into apparatus for measuring optical absorption, reflectance, and fluorescence in order to enable luminescence studies and Raman spectra were obtained. Results of experiments on Si, Ge, GaP, InAs, hydrogen, benzene, nitrogen, graphite, and the superconductor CeCu2Si2 are given.

Spain, I. L.

Mark 4A project training evaluation

A participant evaluation of a Deep Space Network (DSN) is described. The Mark IVA project is an implementation to upgrade the tracking and data acquisition systems of the dSN. Approximately six hundred DSN operations and engineering maintenance personnel were surveyed. The survey obtained a convenience sample including trained people within the population in order to learn what training had taken place and to what effect. The survey questionnaire used modifications of standard rating scales to evaluate over one hundred items in four training dimensions. The scope of the evaluation included Mark IVA vendor training, a systems familiarization training seminar, engineering training classes, a on-the-job training. Measures of central tendency were made from participant rating responses. Chi square tests of statistical significance were performed on the data. The evaluation results indicated that the effects of different Mark INA training methods could be measured according to certain ratings of technical training effectiveness, and that the Mark IVA technical training has exhibited positive effects on the abilities of DSN personnel to operate and maintain new Mark IVA equipment systems.

Stephenson, S. N.

Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements

A technique of arsenic-induced RHEED intensity oscillations has been used to accurately measure arsenic incorporation rates as a function of substrate temperature during the homoepitaxial growths of both GaAs and InAs by molecular beam epitaxy (MBE). Measurements were made at growth temperatures from 350 to 650 C and at arsenic fluxes of 0.1 to 10.0 monolayer/s. The method measures only the arsenic actually incorporated into the growing film and does not include the arsenic lost in splitting the arsenic tetramers or lost by evaporation from the sample.

Lewis, B. F.

Determination of carrier saturation velocity in high-performance In(y)Ga(1-y)As/Al(x)Ga(1-x)As modulation-doped field-effect transistors (with y between 0 and 0.2)

The relation between the intrinsic transconductance per unit gate width and the carrier saturation velocity, v(sat), is used to determine v(sat) for several high-performance pseudomorphic MODFET's with different InAs mole fractions (y). Measurements of In(y)Ga(1-y)As/AlGaAs MODFET's grown by MBE were found to give accurate v(sat) values at 77 K. Devices with y between 0 and 0.20 were shown to have higher v(sat) than conventional GaAs/AlGaAs MODFET's. An optimum y value for peak v(sat), which may optimize overall device performance, is expected.

Henderson, T. S.

Strain-Layer-Superlattice Light Modulator

Conceptual device combines resonant reflection and photovoltaic action to enable one light beam to impose spatial and temporal modulation on another light beam. Such spatial light modulator, with high speed and multiplicity of parallel signal channels, used in image processing or similar computation requiring high data-throughput rates. Microstructures of GaAs and InAs with multiple quantum wells and compositional superlattices grown by molecular-beam epitaxy. Enhanced electro-optical properties of arrangement of alternating layers enables writing light beam to modulate reading light beam.

Maserjian, Joseph