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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

Using the Climbing Drum Peel (CDP) Test to Obtain a G(sub IC) value for Core/Facesheet Bonds

A method of measuring the Mode I fracture toughness of core/facesheet bonds in sandwich Structures is desired, particularly with the widespread use of models that need this data as input. This study examined if a critical strain energy release rate, G(sub IC), can be obtained from the climbing drum peel (CDP) test. The CDP test is relatively simple to perform and does not rely on measuring small crack lengths such as required by the double cantilever beam (DCB) test. Simple energy methods were used to calculate G(sub IC) from CDP test data on composite facesheets bonded to a honeycomb core. Facesheet thicknesses from 2 to 5 plies were tested to examine the upper and lower bounds on facesheet thickness requirements. Results from the study suggest that the CDP test, with certain provisions, can be used to find the GIG value of a core/facesheet bond.

Nettles, A. T.↗
NASA NTRS2013

The Carnegie Hubble Program: The Infrared Leavitt Law in IC 1613

We have observed the dwarf galaxy IC 1613 at multiple epochs in the midinfrared using Spitzer and the in the near-infrared using the new FourStar near-IR camera on Magellan. We have constructed Cepheid period luminosity relations in the J, H, Ks, [3.6] and [4.5] bands and have used the run of their apparent distance moduli as a function of wavelength to derive the line of sight reddening and distance to IC 1613. Using a nineband fit, we find E(BV ) = 0.050.01 mag and an extinction corrected distance modulus of 0 = 24.29 0.03statistical 0.03systematic mag. By comparing our multiband and [3.6] distance moduli to results from the tip of the red giant branch and red clump distance indicators, we find that metallicity has no measurable effect on Cepheid distances at 3.6 m in the metallicity range 1.0 [Fe/H] 0.2, hence derivations of the Hubble constant at this wavelength require no correction for metallicity.

Scowcroft, Victoria↗
NASA NTRS2013

Discovery of a 7 mHz X-Ray Quasi-Periodic Oscillation from the Most Massive Stellar-Mass Black Hole IC 10 X-1

We report the discovery with XMM-Newton of an approx.. = 7 mHz X-ray (0.3-10.0 keV) quasi-periodic oscillation (QPO) from the eclipsing, high-inclination black hole binary IC 10 X-1. The QPO is significant at >4.33 sigma confidence level and has a fractional amplitude (% rms) and a quality factor, Q is identical with nu/delta nu, of approx. = 11 and 4, respectively. The overall X-ray (0.3-10.0 keV) power spectrum in the frequency range 0.0001-0.1 Hz can be described by a power-law with an index of approx. = −2, and a QPO at 7 mHz. At frequencies approx. > 0.02 Hz there is no evidence for significant variability. The fractional amplitude (rms) of the QPO is roughly energy-independent in the energy range of 0.3-1.5 keV. Above 1.5 keV the low signal-to-noise ratio of the data does not allow us to detect the QPO. By directly comparing these properties with the wide range of QPOs currently known from accreting black hole and neutron stars, we suggest that the 7 mHz QPO of IC 10 X-1 may be linked to one of the following three categories of QPOs: (1) the "heartbeat" mHz QPOs of the black hole sources GRS 1915+105 and IGR J17091−3624, or (2) the 0.6-2.4 Hz "dipper QPOs" of high-inclination neutron star systems, or (3) the mHz QPOs of Cygnus X-3.

Oscillation↗
NASA NTRS2013

X-ray Properties of the Young Open Clusters HM1 and IC 2944-2948

Using XMM-Newton data, we study for the first time the X-ray emission of HM1 and IC 2944/2948. Low-mass, pre-main-sequence objects with an age of a few Myr are detected, as well as a few background or foreground objects. Most massive stars in both clusters display the usual high-energy properties of that type of objects, though with log [L(sub X)/L(sub BOL)] apparently lower in HM1 than in IC2944/2948. Compared with studies of other clusters, it seems that a low signal-to-noise ratio at soft energies, due to the high extinction, may be the main cause of this difference. In HM1, the two Wolf-Rayet stars show contrasting behaviors:WR89 is extremely bright, but much softer than WR87. It remains to be seen whether wind-wind collisions or magnetically confined winds can explain these emissions. In IC 2944/2948, the X-ray sources concentrate around HD 101205; a group of massive stars to the north of this object is isolated, suggesting that there exist two subclusters in the field-of-view.

X-ray properties↗
NASA NTRS2014

Electrical Characterization of 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design

This work reports DC electrical characterization of a 76 mm diameter 4H-SiC JFET test wafer fabricated as part of NASA's on-going efforts to realize medium-scale ICs with prolonged and stable circuit operation at temperatures as high as 500 degC. In particular, these measurements provide quantitative parameter ranges for use in JFET IC design and simulation. Larger than expected parameter variations were observed both as a function of position across the wafer as well as a function of ambient testing temperature from 23 degC to 500 degC.

Microelectronics↗
NASA NTRS2008

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 C

The fabrication and testing of the first semiconductor transistors and small-scale integrated circuits (ICs) to achieve up to 3000 h of stable electrical operation at 500 C in air ambient is reported. These devices are based on an epitaxial 6H-SiC junction field-effect transistor process that successfully integrated high temperature ohmic contacts, dielectric passivation, and ceramic packaging. Important device and circuit parameters exhibited less than 10% of change over the course of the 500 C operational testing. These results establish a new technology foundation for realizing durable 500 C ICs for combustion-engine sensing and control, deep-well drilling, and other harsh-environment applications.

Neudeck, Philip G.↗
NASA NTRS2016

Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 C to 700 C

Prolonged 500 degrees Celsius to 700 degrees Celsius electrical testing data from 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) are combined with post-testing microscopic studies in order to gain more comprehensive understanding of the durability limits of the present version of NASA Glenn's extreme temperature microelectronics technology. The results of this study support the hypothesis that T ≥ 500 degrees Celsius durability-limiting IC failure initiates with thermal-stress-related crack formation where dielectric passivation layers overcoat micron-scale vertical features including patterned metal traces.

high temperature↗
NASA NTRS2016

IC 751: A New Changing Look AGN Discovered by NuSTAR

We present results of five Nuclear Spectroscopic Telescope Array (NuSTAR) observations of the type 2 active galactic nucleus (AGN) in IC 751, three of which were performed simultaneously with XMM-Newton or Swift/ X-Ray Telescope. We find that the nuclear X-ray source underwent a clear transition from a Compton-thick (NH approx. = 2 x10(exp 24)/sq cm) to a Compton-thin ( N(sub H) approx. = 4 x10(exp 23)/sq cm) state on timescales of < or approx.3 months, which makes IC 751 the first changing look AGN discovered by NuSTAR. Changes of the line of sight column density at the approx.2 (sigma) level are also found on a timescale of approx. 48 hr (delta N(sub H approx. 10(exp 23)/sq cm). From the lack of spectral variability on timescales of approx.100 ks, we infer that the varying absorber is located beyond the emission-weighted average radius of the broad-line region (BLR), and could therefore be related either to the external part of the BLR or a clumpy molecular torus. By adopting a physical torus X-ray spectral model, we are able to disentangle the column density of the non-varying absorber (N(sub H) approx. 3.8 x10(exp 23)/sq cm) from that of the varying clouds [N(sub H) approx. (1- 150) x 10(exp 22)/sq cm], and to constrain that of the material responsible for the reprocessed X-ray radiation (N(sub H approx. 6 x 10(exp 24)/sq cm).24 -2). We find evidence of significant intrinsic X-ray variability, with the flux varying by a factor of five on timescales of a few months in the 2-10 and 10-50 keV band.

indivdual: Seyfert↗
NASA NTRS2016

IC 3639 - A New Bona Fide Compton-Thick AGN Unveiled By NuSTAR

We analyze high-quality NuSTAR observations of the local (z = 0.011) Seyfert 2 active galactic nucleus (AGN) IC 3639, in conjunction with archival Suzaku and Chandra data. This provides the first broadband X-ray spectral analysis of the source, spanning nearly two decades in energy (0.5-30 keV). Previous X-ray observations of the source below 10 keV indicated strong reflection/obscuration on the basis of a pronounced iron fluorescence line at 6.4 keV. The hard X-ray energy coverage of NuSTAR, together with self-consistent toroidal reprocessing models, enables direct broadband constraints on the obscuring column density of the source. We find the source to be heavily Compton-thick (CTK) with an obscuring column in excess of 3.6 x 10(exp 24) cm(exp −2), unconstrained at the upper end. We further find an intrinsic 2-10 keV luminosity of log(sub 10) (L(sub 2-10 keV) [erg s(exp -1)])= 43.4(+0.6/-1.1) to 90% confidence, almost 400 times the observed flux, and consistent with various multiwavelength diagnostics. Such a high ratio of intrinsic to observed flux, in addition to an Fe-K(alpha) fluorescence line equivalent width exceeding 2 keV, is extreme among known bona fide CTK AGNs, which we suggest are both due to the high level of obscuration present around IC 3639. Our study demonstrates that broadband spectroscopic modeling with NuSTAR enables large corrections for obscuration to be carried out robustly and emphasizes the need for improved modeling of AGN tori showing intense iron fluorescence.

galaxies: active – galaxies: nuclei – galaxies↗
NASA NTRS2018

Demonstration of 4H-SiC JFET Digital ICs Across 1000 °C Temperature Range Without Change to Input Voltages

Operational testing of prototype 4H-SiC JFET ICs across an unrivaled ambient temperature span in excess of 1000 °C, from -190 °C to +812 °C, has been demonstrated without any change/adjustment of input signal levels or power supply voltages. This unique ability is expected to simplify infusion of this IC technology into a broader range of beneficial applications.

Neudeck, Philip G.↗
NASA NTRS2023

Processing Choices for Achieving Long Term IC Operation at 500° C

The prospects for beneficial infusion of integrated circuits (ICs) into previously inaccessible extreme-temperature application environments has increased with recent NASA Glenn demonstrations of 4H-SiC Junction Field Effect Transistor & Resistor (JFET-R) chips functioning for over a year at 500 °C in air ambient [1]. This paper focuses on fabrication process choices believed key to demonstrated 500 °C durability that must be considered when porting this uniquely durable IC capability into commercial foundry manufacturing.

SiC, JFET, Integrated Circuits, High-Temperature, ↗
NASA NTRSDate not supplied

Early Burn-In Parasitic Conduction in 500 °C Durable SiC JFET ICs

All prior reports of long-term 500 °C operation of SiC JFET-R ICs have noted the existence of an initial “burn-in” period of changes in measured electrical characteristics for the first few hundred hours oven-testing. This work reports measurements of “burn-in parasitic MOSFET conduction” that can substantially impact the performance of some circuits during initial heat-up of JFET ICs, but then subsequently disappears after a few hours of operation at 500 °C. The behavior appears generally consistent with the known MOS phenomenon of bias-temperature driven redistribution of mobile ionic contamination. Approaches for further mitigating this initial burn-in conduction mechanism are discussed.

silicon carbide↗
NASA NTRSDate not supplied

Early Burn-In Parasitic Conduction in 500 °C Durable SiC JFET ICs

All prior reports of long-term 500 °C operation of SiC JFET-R ICs have noted the existence of an initial “burn-in” period of changes in measured electrical characteristics for the first few hundred hours oven-testing. This work reports measurements of “burn-in parasitic MOSFET conduction” that can substantially impact the performance of some circuits during initial heat-up of JFET ICs, but then subsequently disappears after a few hours of operation at 500 °C.

silicon carbide↗