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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
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DOE OSTI2026

Flash electropolishing for TEM: Reducing FIB‐induced defects in tungsten with protocols for new materials

Focused ion beam (FIB) milling has become the dominant approach for site-specific transmission electron microscopy (TEM) specimen preparation; however, FIB damage remains a critical limitation for reliable microstructural characterisation, particularly in radiation effects studies. Tungsten is especially susceptible to FIB damage due to its high nuclear stopping power, which promotes the formation and strong diffraction contrast of FIB-induced ‘black spot’ defects that are indistinguishable from very fine irradiation-induced loops/defects resulting from low to intermediate temperature neutron irradiation. In this work, flash electropolishing is systematically evaluated as a post-FIB treatment for minimising preparation-induced artefacts for TEM analysis of tungsten-based alloys. Using a range of non-, ion-, and neutron-irradiated tungsten materials, the effectiveness of flash electropolishing has been assessed through direct comparison with conventional FIB and plasma-FIB preparation including low-energy Ga, Ar, Xe ion cleaning. The results demonstrate that flash electropolishing effectively removes FIB-damaged layers and ‘black spot’ defects, thereby enabling reliable observation of irradiation-induced dislocation structures. Key processing parameters governing flash electropolishing quality – including lamella thickness, applied voltage, polishing duration, electrolyte chemistry, and cathode geometry – have been systematically evaluated, and clear criteria were established for determining when flash electropolishing is required to ensure reliable microstructural analysis. This work also provides practical guidance for implementing flash electropolishing as an artefact-controlled specimen-preparation approach for TEM characterisation of FIB-produced specimens. The systematic protocol can be extended to other, non-tungsten materials.

TEM sample preparation↗
DOE OSTI2025

Explainable artificial intelligence relates perovskite luminescence images to current-voltage metrics

As the demand for low-cost, high-efficiency solar energy technologies grows, metal halide perovskite (MHP) solar cells have emerged as a promising candidate for next-generation photovoltaics due to their high power conversion efficiencies. However, their poor durability and issues with manufacturing consistency remain significant barriers to commercialization. In this work, we develop deep learning models to support materials characterization and provide insight into features and processes influencing performance. The models are trained using transfer learning of a pretrained model to predict relevant current-voltage (IV) metrics based on different combinations of input electroluminescence (EL) and photoluminescence (PL) images of MHP devices. We examine which image types are most informative in accurately predicting different IV metrics. Additionally, we use explainable artificial intelligence (XAI) techniques to provide insights into specific spatial features in the devices that drive differences in performance. We find that stabilized luminescence images (e.g. those collected after biasing the devices for at least 1 min) are better for predicting metrics of open-circuit voltage (by PL) and short-circuit current (by PL with EL), but that predicting fill factor and overall power output may use the time-evolution of EL images. Based on attribution masks generated by integrated gradients for each device performance metric, we further suggest different loss mechanisms associated with categories of large and small spatial defects. Overall, this case study highlights the potential applicability of XAI methodology for streamlining MHP device analysis and accelerating detailed understanding of the relationships between spatial defects and impacts on performance.

14 SOLAR ENERGY↗
DOE OSTI2022

Time series anomaly detection in power electronics signals with recurrent and ConvLSTM autoencoders

The anomalies in the high voltage converter modulator (HVCM) remain a major down time for the spallation neutron source facility, that delivers the most intense neutron beam in the world for scientific materials research. In this work, we propose neural network architectures based on Recurrent AutoEncoders (RAE) to detect anomalies ahead of time in the power signals coming from the HVCM. Bi-directional gated recurrent unit, bi-directional long-short term memory (LSTM), and convolutional LSTM (ConvLSTM) are developed, trained, and tested using real experimental signals from the HVCM module. The results show a good performance of the proposed RAE models, achieving precision up to 91%, recall up to 88%, false omission rate as low as 20% (i.e. 80% of the anomalies were detected), and area under the ROC curve up to 0.9. The three RAE models provide very comparable performance, with LSTM showing slightly better performance than GRU and ConvLSTM. The RAE models are benchmarked against other anomaly detection methods, including isolation forest, support vector machine, local outlier factor, feedforward and convolutional autoencoders, and others; showing a better performance. Here, the results of this study demonstrate the promising potential of RAE in anomaly detection for real-world power systems, and for increasing the reliability of the HVCM modules in the spallation neutron source.

42 ENGINEERING↗
DOE OSTI2026

GaN Core-shell Nanofin Vertical Transistor (CoNVerT): A New Direction for Power Electronics (Final Scientific/Technical Report)

A novel power transistor architecture, the GaN c ore-shell n anofin ver tical transistor (CoNVerT) to address fundamental challenges in realizing the ultimate limit of GaN power transistor performance was explored experimentally. This technology promises ultra-high-efficiency high voltage/high power applications (e.g. DC/DC converters, motor control, fast charging, actuation), as well as to operate in harsh environments. The device exploits a vertical superjunction structure based on an experimentally-validated core-shell nanofin growth process in which lateral p-n heterojunctions are formed in a single growth step, while still maintaining vertical current flow for compact die size and low cost. The concept leverages the best properties of GaN for mid-range voltage applications: high mobility, high breakdown voltage, and native heterojunction enhancement-mode operation. Due to the crystallographic nature of the nanofin growth by molecular beam epitaxy, the sidewall heterojunctions occur on non-polar planes, resulting in ultra-smooth interfaces for high mobility, no sidewall etch damage and related surface/interface states, and elimination of piezoelectric effects that can limit reliability in conventional structures. This also facilitates superjunction formation for maximum device performance, and the selective-area growth of the nanofin results in dislocation-free growth, even on low-cost Si (111) substrate. In this program, core-shell nanofins were grown by molecular beam epitaxy, test structures to evaluate the doping, resistivity, and other electrical properties were fabricated, and the material and test structures were characterized in detail. The work identified clear potential (e.g., the doping was well controlled as required for superjunction concepts), but also additional areas that require additional effort to resolve (some unexpected crystal defects were encountered that require additional engineering to overcome). Simulation studies of the proposed concept validate that the fundamental approach is very promising, but additional effort in experimental realization is needed.

42 ENGINEERING↗
DOE OSTI2020

Non-contact Current-Voltage (I-V) Tracer for Photovoltaics

This report presents a non-contact approach to simultaneously obtain current-voltage (I-V) curves of photovoltaic (PV) substrings and modules in a string without the need of disconnecting the individual modules from the string. There are two types of I-V curve tracers currently available in the marketplace, capacitor-based and electronic load-based. The primary requirement of these conventional I-V tracers is the disconnection of individual modules in the string so the individual modules contacted through the connectors of the individual modules. These contact-tracers have three major limitations in the utility scale power plants: First limitation – Weather and Accuracy: The mass-produced commercial contact-tracers cannot obtain the I-V curves of both string and its modules (as high as 30 modules), almost simultaneously (within about 5 minutes) at, practically, a single irradiance level, a single module temperature, a single spectrum and a single AOI (angle of incidence). This inability of the contact-tracers forces the testing personnel to wait for an extended or multiple sunny (>800 W/m 2 ) duration(s) of a cloudy day. This is a serious limitation as waiting for the sunny conditions or days is a huge practical challenge in almost all locations, except desert locations. Also, since the I-V curves are obtained at different prevailing weather conditions, it becomes critical to translate all the measured I-V curves of 30 modules in the string to a single test condition, for example STC (standard test conditions), so the underperforming modules can be identified. The accuracy of translation equations is heavily influenced by the irradiance level and temperature, spectral and AOI ranges; Second limitation - Safety: The second limitation is related to the high voltage electrical safety of the test personnel during disconnecting and reconnecting of individual modules or cable connectors from the string under daylight conditions and damaging of the original module connectors (especially the field aged connectors) during the disconnecting and reconnecting process; Third limitation – Labor: The third limitation is related to the enormous amount of time and hardship for the test personnel under prevailing (often harsh) protracted field conditions. This project was executed by Arizona State University in collaboration with its industry partner, PV Measurements Inc. (PVM). To mitigate all the three challenges of the state-of-the-art equipment indicated above, we utilized a non-contact I-V (NCIV) tracer approach. In this approach, we utilized an electrostatic voltmeter (ESV) and voltage sensor/probe combination to obtain I-V curves. The ESV units are extensively used in the high voltage industry but not in the PV industry. To obtain the simultaneous I-V curves of the substrings and modules within a string, we utilized multiple commercial ESV-Probe sets. In this approach, we utilized a non-contact voltage sensor (called, Probe) placed on the glass surface of the module (above the last cell of the module). This probe senses the module voltage (with respect to ground) through measured capacitance which is dictated by the surface charges (which in turn is dictated by the module voltage) and transmits the sensed voltage to the voltmeter (called, ESV or NCV, non-contact voltmeter). The current is sensed by a non-contact hall sensor. In a 30-module string, the 30th probe obtains the entire string I-V along with the string I-V obtained by the electronic load. so that the I-V curves of the substrings and modules can be obtained by NCIV without the need of disconnecting the individual modules in the string. The string I-V curves obtained by the electronic load and NCIV can be compared for the accuracy determination. One can use 30 ESV units and 30 Probes to obtain 30 I-V curves of a 30-module string or use just 5 ESV units and 30 Probes in conjunction with 5 six-channel switchboxes (called, 6:1 switchboxes). To reduce the equipment cost, we utilized the 6:1 switchbox approach so the number of ESV units is reduced from 30 to 5. The approaches, achievements and challenges of this project are detailed in this report.

14 SOLAR ENERGY↗
DOE OSTI2022

Hexagonal Distributed Embedded Energy Converters (HexDEECs)

The HexDEEC is a small, characteristic length approximating a centimeter, energy transducer that converts the dynamic deformations of its elastomer housing into electricity through a variable capacitance charging-discharging cycle. This device is a type of Distributed Embedded Energy Converter Technology (DEEC-Tec), a new domain for marine renewable energy research that utilizes a conglomeration of small distributed embedded energy converters (DEECs) that, in aggregate, form larger metamaterial frameworks. These resulting DEEC-Tec metamaterials can then, in turn, be used to construct flexible ocean wave energy converters called flexWECs, which can utilize a broad band of ocean wave frequencies and lack highly loaded rigid bodies. These systems also provide new avenues of wave energy harvesting such as actively transforming topologies (e.g., shape and form) and morphologies (e.g., stiffness and damping throughout its entire structure) in real time. Presented, is one specific type of DEEC: the HexDEEC, which is currently being developed by the United States National Renewable Energy Laboratory. This transducer shows promise in aiding the adoption and further development of the DEEC-Tec domain. The following presentation focuses on the promise of this technology and current work being done to analyze the performance of an individual HexDEEC design. The HexDEEC is composed of a hyperelastic hexagonal housing, nominally silicon rubber, with six electrodes on its inner faces. The upper three electrodes share the same charge while the lower three electrodes oppose the upper electrode charges. Externally, the HexDEEC has two arms extending away from the middle vertices of the hexagon. Via principles governing the relationship between electrical capacitance and electrical potential (voltage and charge), electricity is generated when the HexDEEC's arms are dynamically pulled or released under tensile loading, as doing so causes the distance between the upper and lower sets of electrodes to change - varying the energy converter's overall capacitance. Analytical and numerical modeling is being used to evaluate the mechanics and electrical energy generated by the HexDEEC. Equations to describe the capacitance and electrostatic forces acting on this unique system have been developed and implemented into the numerical modeling software STAR-CCM+, along with models to describe its hyperelastic material, such as the Mooney-Rivlin 3-parameter model. So far, an initial design has been analyzed and we plan to further optimize it to increase power production. Individual HexDEECs have been fabricated by drawing uncured liquid silicon rubber into molds via vacuum pressure. To simplify manufacturing, HexDEEC sub-components - e.g., electrodes, wires - can be placed within those molds such that they are directly embedded into the hexagonal housing during the curing process. Furthermore, DEEC-Tec metamaterials can be created by interweaving or sequentially layering multiple HexDEEC strands together. The HexDEEC based metamaterial could then generate electricity through its gross deformations. Ultimately, HexDEECs represent a specific type of energy transducer that can be leveraged, by the DEEC-Tec domain, to create metamaterials used to construct novel flexWECs.

DEEC-Tec↗
DOE OSTI2025

Electric Drive Technologies Consortium (EDTC)/ Cost competitive, high-Performance, highly Reliable (CPR) Power Devices on 4H-SiC (Final Report)

4H-Silicon carbide (4H-SiC) is a wide bandgap semiconductor that offers superior material properties over silicon, including higher critical electric field, thermal conductivity, and electron saturation velocity. These advantages make 4H-SiC highly attractive for high-voltage, high-efficiency power electronics. However, realizing the full potential of SiC requires device technologies that are not only high-performing but also manufacturable and reliable under real-world operating conditions. This report summarizes the outcomes of a five-year R&D effort funded by the U.S. Department of Energy (DOE) under the Electric Drive Technologies Consortium (EDTC), focused on developing cost-competitive, high-performance, and highly reliable (CPR) power devices on 4H-SiC substrates. The program targeted scalable and manufacturable 1.2 kV-class SiC MOSFETs optimized for next-generation electric vehicles, renewable energy systems, and industrial power conversion. The project delivered transformative advancements in SiC power device performance and ruggedness. Particularly, Specific on-resistance (R on,sp ) was reduced by up to 37%, from ~4.0 m$\Omega \cdot$cm 2 in earlier designs to an industry-leading 2.40 m$\Omega \cdot$cm 2 , driven by optimized doping, refined JFET widths, and layout engineering. Breakdown voltages (BV) exceeded 1600 V, marking improvement over legacy baselines, and demonstrating the robustness of newly implemented junction profiles and edge terminations. Short-circuit withstand time (SCWT) saw a remarkable 4$\times$ increase, from ~2 $\mu$s to over 8 $\mu$s, achieved through the successful deployment of deep P-well structures (~1.8–2.0 $\mu$m) via channeling implantation. This innovative process breakthrough enabled precise junction formation without MeV-class implantation tools, reduced leakage under high field stress, and allowed even the shortest-channel devices (down to 0.3 $\mu$m) to achieve both high BV and excellent ruggedness—breaking the traditional trade-off between conduction efficiency and blocking capability. Several novel architectures pushed the performance envelope further. JBSFETs—featuring embedded Schottky portions—eliminated bipolar degradation and drastically reduced third-quadrant leakage, while Ladder MOSFETs introduced a clever orthogonal conduction path that achieved a 15.4% reduction in R on,sp over standard linear designs. Switching performance reached new benchmarks: short-channel devices showed a 31% reduction in total switching energy compared to 0.5 $\mu$m counterparts, while maintaining manageable gate drive requirements. Layout-optimized structures not only improved transconductance but also accelerated switching transitions, pointing to real-world benefits in converter-level efficiency. The devices also passed rigorous reliability validation. Stress-tested across TDDB, HTGB, HTRB, HVP, and burn-in, the devices screened under 30 V/10 hr and 43 V/1 s protocols consistently exhibited tighter lifetime distributions and long-term oxide robustness. These screening techniques proved effective in identifying latent defects and ensuring deployment-grade reliability. Meanwhile, advanced 3D TCAD simulations revealed and resolved electric field hotspots—particularly in HEXFET corners—where fields exceeding 4.8 MV/cm were mitigated through geometry-aware layout corrections. Overall, the results of this project demonstrate a manufacturable and scalable SiC power device platform that addresses key DOE performance targets for efficient, robust, and reliable 1.2kV 4H-SiC Power Devices. The developed technologies represent a meaningful step forward in the commercial readiness of high-voltage SiC solutions and provide a strong foundation for continued advancement in wide bandgap power electronics.

42 ENGINEERING↗
DOE OSTI2024

SMART SiC Power ICs: Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits (Final Technical Report)

This collaborative project was initiated with the goal of developing Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits (SMART SiC Power ICs). In pursuit of this objective, innovative designs and fabrication processes were implemented, enabling the development of large-scale (>1 cm²) SiC Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuits and high-voltage (400–600 V) lateral power MOSFETs (HV-LDMOS) on 150 mm 4H-SiC substrates. The resulting SMART SiC Power ICs are tailored to support a wide range of applications requiring diverse voltage and power levels, including automotive systems, industrial equipment, electronic data processing, energy harvesting, and power conditioning. To achieve the proposed ‘SMART’ technology for SiC ICs, the team focused on 1) the Development of highly scalable CMOS (with high channel mobilities for n-type and p-type MOSFETs), LDMOS (~600V, 10A rated), and IC technologies, 2) Establishment of a manufacturable process baseline in a production-grade-, 150mm, SiC fabrication facility, and 3) Demonstration of SMART SiC ICs. The project initially comprised of fabricating 5 lots. In lot 1 monolithic integration using a single process was achieved. Here, we were able to successfully accomplish Integrated HV NMOSFET with LV CMOS on N-epi/N+ Substrate. The HV NMOS demonstrated a Breakdown Voltage (BV) more than 600V. Circuit demonstration of CMOS was also another achievement from this lot. In lot 2, priority was in place for isolation and integration. Here we addressed the isolation concerns and integrated the HV NMOS and LV CMOS using the N-epi/P-epi/N+ substrate. Similar to the lot 1, we were able to achieve a BV of 600 V for HV NMOS. Optimized gate oxide process with high channel mobilities, better gate oxide reliability, development of SPICE models, successful ohmic process development, novel wafer area saving design layouts, P+ isolation schemes with channeling implantations and high temperature operational circuits demonstrations are some of the key highlights from lot 1 and lot2. In lot 3, discrete device performances of HV NMOS with a BV ~700V and reliable LV CMOS performances were achieved. Also, novel architectural solutions were successfully implemented to suppress the electric field crowding at the gate oxide for reliable operations. In lot 4, half bridge power driver ICs with a conversion efficiency of (target 90% to 95%) in the 1-5MHz switching frequency range for output power between 25 W to 3 kW have been included in. However, due to the unfortunate events of sudden foundry shutdown (SiCamore Semi) the processing of lot 4 wafers came to a complete stop (January 2024). Arrangements have recently been made to shift the fabrication to another foundry, General Electric Aerospace. The fabrication process now on course (as of December 2024). Characterizations are delayed due to this unfortunate circumstance. The proposed trench architectural-based devices and ICs (lot 5) underwent modifications from the original project proposal. This change was necessitated by limitations in the availability of trench-based processes at commercial production-grade fabrication facilities in the US. Apart from above achievements, a Process Development Kit (PDK) was successfully developed for planar type SiC CMOS/LDMOS.

42 ENGINEERING↗
DOE OSTI2025

Simulations of the fault current limiting operation of a long-length REBCO CORC ® superconducting cable cooled by helium gas

Conductor-on-round-core (CORC®) cables composed of rare-earth-barium-copper-oxide high-temperature superconducting (HTS) tapes are of great interest for power transmission applications due to their many advantages such as high power density, light weight, and low loss. Closed circulation loops of cryogenic helium gas can be used to cool HTS cables down to low temperatures to significantly improve their current-carrying capacity. Coupled circuit-electromagnetic-thermal finite element simulations implemented in the COMSOL Multiphysics package were developed, validated, and then used for simulating the fault current limiting (FCL) performance and the cooling processes of an 8-layer CORC® cable cooled with a flow of cryogenic helium gas. In the simulations, the temperature dependence of the electrical and thermal properties of all component materials is implemented for improved accuracy. To overcome computational challenges caused by the considerable difference in geometrical scales (i.e. few-µm-thick HTS layers versus 10 m-long HTS cable), the model is divided into two separate simulations. The first simulation is performed on the transverse cross-section of the cable to calculate the electric field, heating power and temperature rise in each component of a CORC® cable during FCL operation. The heating power calculated in the first simulation is transferred to the second model to simulate the cooling of a 10 m-long cable after the fault is cleared. The effect of the helium gas flow rate on the cooling process is also investigated to develop strategic approaches for optimizing cooling systems for HTS cables with FCL capability. The simulations indicated that a 40 ms fault with a voltage drop of 20 V m −1 along the cable can result in a temperature increase from 60 K to about 165 K inside the cable, and it takes about 500 s to cool the cable back to nearly 60 K with a flow of cold helium gas at a rate of 5 g s −1 .

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS2012

SpaceCube Mini

This version of the SpaceCube will be a full-fledged, onboard space processing system capable of 2500+ MIPS, and featuring a number of plug-andplay gigabit and standard interfaces, all in a condensed 3x3x3 form factor [less than 10 watts and less than 3 lb (approximately equal to 1.4 kg)]. The main processing engine is the Xilinx SIRF radiation- hardened-by-design Virtex-5 FX-130T field-programmable gate array (FPGA). Even as the SpaceCube 2.0 version (currently under test) is being targeted as the platform of choice for a number of the upcoming Earth Science Decadal Survey missions, GSFC has been contacted by customers who wish to see a system that incorporates key features of the version 2.0 architecture in an even smaller form factor. In order to fulfill that need, the SpaceCube Mini is being designed, and will be a very compact and low-power system. A similar flight system with this combination of small size, low power, low cost, adaptability, and extremely high processing power does not otherwise exist, and the SpaceCube Mini will be of tremendous benefit to GSFC and its partners. The SpaceCube Mini will utilize space-grade components. The primary processing engine of the Mini is the Xilinx Virtex-5 SIRF FX-130T radiation-hardened-by-design FPGA for critical flight applications in high-radiation environments. The Mini can also be equipped with a commercial Xilinx Virtex-5 FPGA with integrated PowerPCs for a low-cost, high-power computing platform for use in the relatively radiation- benign LEOs (low-Earth orbits). In either case, this version of the Space-Cube will weigh less than 3 pounds (.1.4 kg), conform to the CubeSat form-factor (10x10x10 cm), and will be low power (less than 10 watts for typical applications). The SpaceCube Mini will have a radiation-hardened Aeroflex FPGA for configuring and scrubbing the Xilinx FPGA by utilizing the onboard FLASH memory to store the configuration files. The FLASH memory will also be used for storing algorithm and application code for the PowerPCs and the Xilinx FPGA. In addition, it will feature highspeed DDR SDRAM (double data rate synchronous dynamic random-access memory) to store the instructions and data of active applications. This version will also feature SATA-II and Gigabit Ethernet interfaces. Furthermore, there will also be general-purpose, multi-gigabit interfaces. In addition, the system will have dozens of transceivers that can support LVDS (low-voltage differential signaling), RS-422, or SpaceWire. The SpaceCube Mini includes an I/O card that can be customized to meet the needs of each mission. This version of the SpaceCube will be designed so that multiple Minis can be networked together using SpaceWire, Ethernet, or even a custom protocol. Scalability can be provided by networking multiple SpaceCube Minis together. Rigid-Flex technology is being targeted for the construction of the SpaceCube Mini, which will make the extremely compact and low-weight design feasible. The SpaceCube Mini is designed to fit in the compact CubeSat form factor, thus allowing deployment in a new class of missions that the previous SpaceCube versions were not suited for. At the time of this reporting, engineering units should be available in the summer 2012.

Michael Lin↗
DOE OSTI2025

A proposed high-intensity radiometer calibration method using concentrated solar radiation

Accurate calibration of irradiance measurement devices, or radiometers, is essential for ensuring the reliability of measurements in high heat applications such as concentrating solar power (CSP), aerospace, defense, and pulsed power systems. Despite the critical need, existing calibration standards and service providers are limited to irradiance levels below 100 kW/m 2 and specific radiation sources, which is insufficient for many applications. For instance, CSP technologies, particularly those under the Department of Energy’s Solar Energy Technologies Office (SETO) Gen 3 program, require accurate measurements of broadband irradiance at levels exceeding 2000 kW/m 2 . In even more extreme scenarios, such as re-entry vehicles, heat levels can surpass 10000 kW/m 2 . Current ISO standards, specifically ISO 14934–2 and ISO 14934–3, are constrained to lower irradiance levels and dependent on black body heat sources, limiting their applicability for high-intensity broadband irradiance measurements, particularly in concentrated solar applications. Here, to address this shortfall, the National Solar Thermal Test Facility (NSTTF) at Sandia National Laboratories (SNL) proposes a calibration method and facility capable of characterizing radiometers up to 2750 kW/m 2 using concentrated solar irradiance. Calibrating with concentrated sunlight is important for solar applications as it aligns the calibration process with the solar spectrum. This alignment is crucial for minimizing systematic errors and avoiding the need for additional corrections that may arise when radiometers designed for solar applications are calibrated using black-body or electrical sources. This paper presents the present day NSTTF characterization facility and procedure, detailing the proposed calibration method and uncertainty quantification. The presented method builds upon 1980′s NSTTF methodology and involves both theoretical and empirical methods to establish a robust relationship between gauge voltage output and irradiance intensity, quantifying both measurement and fitting errors. By addressing the limitations of existing standards and extending the characterization range, this work provides an advancement in the field of high-intensity irradiance measurement and instrumentation characterization.

Gardon gauge↗
DOE OSTI2026

Experimental and simulation study of target biasing effects on plasma transport in linear plasma device MPS-LD

Linear plasma devices (LPDs) are important experimental platforms for investigating plasma–material interactions (PMI). In PMI experiments, it has been found that applying a target bias not only effectively modifies the incident ion energy, but also induces significant changes in the electron density and electron temperature, whereby the evolution of these plasma parameters is primarily governed by plasma transport processes. However, at present, the physical process and mechanism underlying such bias-induced variations remain unclear. In this work, biasing experiments under argon plasma discharge conditions were first carried out on the MPS-LD device. For the corresponding experiments, an electric potential model was newly developed based on the BOUT++ LPD module, enabling self-consistent simulations of plasma transport under biased conditions. Numerical simulations were then performed to reproduce the experimental results and to validate the accuracy of the proposed model. Finally, by combining experimental measurements with numerical simulations, a bias-voltage scan was performed to investigate how the electron density and electron temperature vary with the bias voltage (U bias ). The results show that applying negative bias decreases the target electron density (n e,T ) while increasing the target electron temperature (T e,T ). In contrast, positive bias increases both n e,T and T e,T ; however, at high positive bias, n e,T first reaches a maximum and subsequently decreases with further increases in U bias . The underlying physical mechanisms are analyzed using particle flux, momentum, and energy conservation. It indicates that the applied bias regulates the parallel electric field, thereby changing ion and electron velocities, and consequently affecting the electron density. At high positive bias, the ion velocity is further influenced by ion viscosity, leading to the reversal in n e,T . Meanwhile, the enhanced parallel electric field drives stronger currents, significantly increasing ion–electron frictional work and converting the input bias power into electron energy, which raises the electron temperature. In conclusion, these results contribute to a deeper understanding of the effects and mechanisms of biasing on plasma transport in the MPS-LD device.

BOUT++ simulation↗
DOE OSTI2026

Upgrading Biogas through in situ Conversion of Carbon Dioxide to Biomethane in Anaerobic Digesters

Organic waste streams generated by wastewater treatment plants, agricultural operations, and food processing industries represent an important yet underutilized opportunity for renewable energy production in the United States. Through anaerobic digestion, these waste streams can produce biogas, a mixture primarily composed of methane (CH4) and carbon dioxide (CO2), that can be upgraded to pipeline-quality natural gas. However, most existing upgrading technologies remove CO2 from biogas rather than utilizing it, leaving a significant portion of the potential energy unused. This project investigates a novel biological upgrading approach that converts CO2 into additional CH4 by supplying hydrogen (H2) to specialized microorganisms capable of performing hydrogenotrophic methanation. The main challenges associated with biological biogas upgrading are related to hydrogen supply, gas-liquid mass transfer, and process stability. First, due to the high cost of hydrogen gas, it is preferable that H2 be produced on-site using renewable energy sources such as wind or solar power. Second, hydrogen has low solubility in liquids, which limits its availability to microorganisms and requires strategies to improve gas dissolution and transfer within the reactor. Third, process inhibition may occur as a result of increased pH caused by CO2 consumption or elevated H2 partial pressure, both of which can negatively affect methanogenic activity. Although research in these areas has advanced during the course of this project, these challenges have not yet been fully resolved. To date, the biological systems that have achieved the highest methane concentrations are typically ex-situ reactors, where operational conditions can be more easily controlled. For this reason, the findings of the present project remain highly relevant. The project goal was to develop an innovative system that can accomplish biogas upgrading via biological conversion of CO2 to CH4, in a novel hybrid approach that combines the advantages of both in-situ and ex-situ systems. The proposed system employs a three-phase upflow anaerobic bioreactor with H2 delivery through a gas-permeable membrane, enabling efficient hydrogen transfer and microbial conversion. Under optimized operating conditions, the system achieved 99% H2 consumption and 90% CO2 conversion. A subsequent gas cleaning stage was implemented to further improve gas quality and meet target purity standards. The upgraded gas composition reached 97.7% CH4, 2.2% CO2, and 0.97% O2, while H2S concentrations remained below detection limits. In addition, a flue gas-driven inorganic thermoelectric generator (TEG) system was designed and experimentally validated as a potential source of electricity for H2 production. The system consisted of six TEG modules connected in series and achieved an open-circuit voltage of 4.5 V and a maximum power output of 224 mW at a temperature difference of approximately 53.5 °C, demonstrating effective conversion of waste heat into electrical power under simulated flue gas conditions. Finally, a comprehensive techno-economic analysis was completed to evaluate the capital and operating costs associated with the proposed system. The results provide important insights to guide future scale-up, optimization, and potential deployment of integrated biological biogas upgrading technologies.

09 BIOMASS FUELS↗
DOE OSTI2021

Effect of electrode rinse solutions on the electrodialysis of concentrated salts

The data presented indicate that modest attention to the chemistry of the electrode rinse solution can yield as much as 56% improvement in process efficiency. When operating electrodialysis (ED) with salt concentrations greater than 10,000 mg/l (as NaCl) the amperage can be relatively high even at low voltages. To maximize the overall rate of ion transport from diluate to concentrate, there is a need to minimize resistances in the electrode cells since these can represent as much as 30% of the total resistances in the entire process and in this particular ED unit, represented resistance roughly equivalent to that within the membrane stack. This work describes the performance of a 10-cell pair, 200 cm 2 (0.02 m 2 ) per membrane, pilot ED unit operated in batch mode at 5 V potential. The feedstock to the stack was varied from 0.5% to 6% NaCl. Results from Volt-amp profiles (2.0–15 V) were used as the rationale for choosing the preferred electrode rinse solution, 90 g/l (kg/m 3 ) disodium sulfate at pH 12.5. The recommended solution of 30 g/l (kg/m 3 ) disodium sulfate at neutral pH was tested against stronger solutions (60, 90, and 120 g/l (kg/m 3 ) disodium sulfate) at neutral pH and with 1 g/l (kg/m 3 ) sodium hydroxide added to yield solutions at pH 12.5. There were stark differences in the performance of the ED unit between the solutions at pH 7 and those at pH 12.5. The slopes of the Volt-amp profiles improved indicating less resistance to ion flow at pH 12.5. Most of the difference can be attributed to the greater conductivity of sodium hydroxide compared to disodium sulfate, where even a modest addition of 1 g/l (kg/m 3 ) sodium hydroxide increased the conductivity of the solution between 8 and 20% depending on the concentration of disodium sulfate. Most notably, the initiation voltage was 2.39 ± 0.08 V with solutions at pH 7 and 1.99 V ± 0.04 V when the rinse solutions were around pH 12.5, a difference of around 0.42 V. Since the full batch runs were performed at 5.0 V, this 0.42 V differential represented a loss of 8% in process efficiency. A series of tests showed a shift in initiation voltage occurred between pH 11.5 and 12.5. Nernst equations for water electrolysis are coupled with a simple flux model that estimates the concentration of hydroxide and hydronium ions at the electrode surfaces. This model indicates that the potential demanded by the electrodes is directly linked to the current. Furthermore, there is a steep drop in the potential demanded by the anode when there is sufficient hydroxide available to generate oxygen from hydroxide as opposed to generation from water. The voltage demand is minimal at pH 12.5 and reflective of the reference standard voltage (just over 1.23 V predicted at 0.1 amps). However, the flux model predicts that the voltage demanded by the electrodes at pH 7 is 1.61 V at 0.1 amps (the lowest amperage measurable with the power pack). In conclusion, comparing this result to the reference standard (E 0 = -1.23 V) yields a satisfactory explanation for the observed difference below reference standard of 0.42 V.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Collaborative R&D with REEL Solar Inc (REEL) to Understand and Overcome Performance Limitations in CdTe Solar Cells: Cooperative Research and Development (Final Report)

This CRADA will focus on processing, advanced characterization, and testing of photovoltaic materials and devices to understand and improve REEL CdTe solar technology. This will include examining process variations and different buffer, absorber, and contact layers from REEL and NLR to maximize performance. The unique and diverse advanced characterization tools at NLR, such as time-resolved photoluminescence, capacitance-voltage measurements, electron beam scattered diffraction, cathodoluminescence, electron microscopy, TOF-SIMS, and other measurements will be applied to characterize REEL processing to improve understanding and guide experimental directions. Accelerated stability and potential induced degradation tests will be used to analyze metastability, short-and-long term degradation, and improve bankability. A second and major thrust this period will be joint development of Si/CdTe tandem solar cells to overcome industry wide terrestrial solar efficiency limits with the two lowest cost and manufacturable solar materials today. This will include developing novel transparent back contacts that can be incorporated into tandem structures and other novel solar applications, detailed analysis of designs and configurations for CdTe/Si tandem modules, and prototyping REEL CdTe Technology with Si bottom cells in tandem structures.

14 SOLAR ENERGY↗
DOE OSTI2025

Fluorinated polythiophenes with ester side chains for boosting the V OC and efficiency in non-fullerene polymer solar cells

As the power conversion efficiency (PCE) of organic photovoltaics (OPVs) approximates the 19 % threshold, wide bandgap (WBG) polythiophenes (PTs) have gained increasing attention due to their simple chemical structures and ease of synthesis, making them promising candidates for large-scale production. However, the benchmark polymer poly(3-hexylthiophene) (P3HT) is limited by its high-lying HOMO energy level, which restricts the open-circuit voltage (V OC ) in solar cells. Here, in this study, we introduce a novel series of PT derivatives (PDC8-T, PDC8-3T, PDC16-3T, and PDC16-3T-2F) featuring ester side chains designed to fine-tune electronic properties through a streamlined three-step synthesis. Additionally, we incorporated a π-spacer to reduce steric hindrance and elongated alkyl side chains to improve solubility and processability. Compared to P3HT, these PT derivatives demonstrate a significant reduction in HOMO energy levels, lowering by approximately 0.3–0.4 eV. Among them, PDC16-3T-2F—with fluorine atom substitution—achieves the lowest HOMO energy level, induces a coplanar molecular conformation, and enhances polymer aggregation behavior. We evaluated these PT derivatives in inverted non-fullerene bulk-heterojunction (NFA BHJ) OPVs. The PDC8-3T device showed a relatively low PCE of 0.69 %, with a V OC of 0.76 V, a short-circuit current density (J SC ) of 3.32 mA/cm 2 , and a fill factor (FF) of 27.3 %. In contrast, the PDC16-3T-2F device achieved an impressive PCE of 7.21 %, with a V OC of 0.85 V, a J SC of 14.60 mA/cm 2 , and an FF of 58.4 %. This remarkable improvement is attributed to the fluorine substitution, which not only enhances molecular orientation but also downshifts the HOMO energy level and further boosts the V OC . Hence, these molecular design strategies have led to a fibrillar bicontinuous interpenetrating network with optimal nanoscale phase separation within the active layer.

14 SOLAR ENERGY↗
NASA NTRS2004

Resolving the Issues with Flywheel Position Sensors

For the past few years, the Advanced Electrical Systems Branch here at NASA Glenn has been pursuing research in the area of flywheels. The purpose of these pursuits has been t o explore the potential for flywheels to replace current battery-powered systems in space. So far it has been learned that flywheels offer large momentum storage capacity, comparatively small volume, high durability, and near- complete discharge capabilities, all of which are advancements over the existing nickel hydrogen and nickel cadmium batteries. Another significant advantage of flywheels is the potential they offer for combining the function of attitude control with energy storage. During the summer of 2004, I worked with Dr. Barbara Kenny in the Advanced Electrical Systems Branch, supporting the work she is doing by analyzing and testing some new components for the new Generation-2 flywheel. To monitor the speed and angular position of the flywheel rotor, a once-around (OAR) signal along with a sensorless algorithm is used. The OAR signal is used for the magnetic bearings that keep the flywheel suspended for frictionless operation. The sensorless algorithm is used for the flywheel motor/generator control. The OAR is generated from position sensors that monitor a circular plate. The plate has a cut down the middle such that one half of the circle is on a slightly lower level than the other. Every half-turn, or 180, the sensors detect the "cut" on the plate, and trigger the OAR, telling the computer that the rotor has made half a revolution. This, however, doesn't provide needed detailed information about the angular position of the rotor, since it only provides a signal alert every half- revolution. This is enough information for the magnetic bearing control but is insufficient for the motor/generator control. A new resolver was designed such that it would give continuous angle information rather than the 180 degree information of the OAR. The new resolver has two separate observable pieces: a flat middle section to monitor vertical motion, and an angled section around the circumference, which, when observed from above, produces a sine-wave displacement through the entire 360" revolution. My first job when I arrived this summer was to calibrate the sensors that would be mounted on the inside of the flywheel casing to monitor the position (angular and vertical) of the shaft. After calibration, I used the sensors to evaluate voltage outputs created by position differences between two pairs of sensors on the angled portion of the resolver for eight different angular positions, moving the resolver vertically and laterally through its entire potential range of motion. The results of these tests will be used to determine the rotor angular (and axial) position from the sensor readings once the new flywheel unit is assembled. The sensorless algorighm mentioned above consists of two operations: the signal injection method and the back electro-motive force (EMF). The signal injection is meant to work at low speeds, while the back EMF algorithm is meant to work at higher speeds. Both work together to determine the correct estimate of rotor position and speed based on the measured motor/generator current. It was determined that we wanted to know exactly how accurate our estimation methods were, and so a resolver (a commercially available mechanical sensor mounted to the motor/generator shaft to measure rotor position and speed) and a "Resolver to Digital" (R2D) circuit board was purchased to make the comparison to the existing estimation. My work related to the R2D board has included the following: creating two connector cables (one to power the circuit and one to get readable output off the board), writing Simulink code to process the board's output, and building a dSpace panel to control and monitor the circuit. The next step in the process will be to perform tests to compare the estimated rotor position and speed from the sensorless algorithm to the actual rotor and speed from the resolver signal.

Fehrmann, Elizabeth A.↗
DOE OSTI2022

Hexagonal Distributed Embedded Energy Converters (HexDEECs)

Distributed Embedded Energy Converter Technologies (DEEC-Tec) is a new domain for marine renewable energy research that utilizes a conglomeration of small distributed embedded energy converters (DEECs) that, in aggregate, form larger metamaterial frameworks. These resulting DEEC-Tec metamaterials can then, in turn, be used to construct flexible ocean wave energy converters called flexWECs. DEEC-Tec enables flexWECs: (i) to be inherently broad-banded ocean wave frequency energy converters and (ii) to have an inherent lack of highly loaded rigid bodies. The DEEC-Tec domain also benefits the marine renewable energy domain by inherently availing ways that marine energy can be harvested and converted that heretofore has not yet been considered possible: real-time execution of transforming topologies (e.g., actively changing a flexWEC's shape and form) and morphologies (e.g., actively changing a flexWEC's stiffness and damping throughout its entire structure). Presented, is one specific type of DEEC, a HexDEEC, that shows promise in aiding the adoption and further development of the DEEC-Tec domain - it is a small energy transducer being developed by the United States National Renewable Energy Laboratory. The HexDEEC is a small (characteristic length approximating a centimeter) energy transducer that converts the dynamic deformations of an elastomer into electricity through a charging-discharging cycle of a capacitor whose capacitance is varied by those elastic deformations. The HexDEEC is composed of a hyperelastic hexagonal housing (nominally silicon rubber) with six electrodes on its inner faces. The upper three electrodes share the same charge while the lower three electrodes oppose the upper electrode charges. Externally, the HexDEEC has two arms extending away from the middle vertices of the hexagon. Via principles governing the relationship between electrical capacitance and electrical potential (voltage and charge), electricity is generated when the HexDEEC's arms are dynamically pulled or released under tensile loading as doing so causes the distance between the upper and lower sets of electrodes to change - varying the energy converter's overall capacitance. Analytical and numerical modeling have already been used to estimate the electrical energy produced by a HexDEEC. The cursory models approximate the HexDEEC as a parallel plate variable capacitor - simplifying from six to two opposing plates with a constant dielectric volume between those two plates. To account for the elastic HexDEEC material properties, software such as SolidWorks and STAR-CCM+ have been used to generate hyperelastic models; notably, Mooney-Rivlin based models. Individual HexDEECs have been fabricated by drawing uncured liquid silicon rubber into molds via vacuum pressure. To simplify manufacturing, HexDEEC sub-components - e.g., electrodes, wires - can be placed within those molds such that they are directly embedded into the hexagonal housing during the curing process. Furthermore, DEEC-Tec metamaterials can be created by interweaving or sequentially layering multiple HexDEEC strands together. The HexDEEC based metamaterial could then generate electricity through its gross deformations. Ultimately, HexDEECs represent a specific type of energy transducer that can be leveraged, by the DEEC-Tec domain, to create metamaterials used to construct novel flexWECs.

DEEC-Tec↗