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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Extracellular vesicles of calcifying turkey leg tendon characterized by immunocytochemistry and high voltage electron microscopic tomography and 3-D graphic image reconstruction

To gain insight into the structure and possible function of extracellular vesicles in certain calcifying vertebrate tissues, normally mineralizing leg tendons from the domestic turkey, Meleagris gallopavo, have been studied in two separate investigations, one concerning the electron microscopic immunolocalization of the 66 kDa phosphoprotein, osteopontin, and the other detailing the organization and distribution of mineral crystals associated with the vesicles as determined by high voltage microscopic tomography and 3-D graphic image reconstruction. Immunolabeling shows that osteopontin is related to extracellular vesicles of the tendon in the sense that its initial presence appears coincident with the development of mineral associated with the vesicle loci. By high voltage electron microscopy and 3-D imaging techniques, mineral crystals are found to consist of small irregularly shaped particles somewhat randomly oriented throughout individual vesicles sites. Their appearance is different from that found for the mineral observed within calcifying tendon collagen, and their 3-D disposition is not regularly ordered. Possible spatial and temporal relationships of vesicles, osteopontin, mineral, and collagen are being examined further by these approaches.

NASA Discipline Musculoskeletal↗
DOE OSTI2025

Thermal processing to modulate surface chemistry and bulk charge distribution in nickel-rich layered lithium positive electrodes

The broader application of nickel-rich layered oxides as positive electrode materials for lithium-ion batteries has been hindered by their high manufacturing cost and inferior cycling stability. Thermal processing, which is integral to electrode materials manufacturing and fundamental in materials science, has not been fully utilized to design advanced positive electrode materials. Herein, we demonstrate the capability of using quenching heat treatment to regulate Li distribution and modulate electronic structure near particle surface. The resulting materials exhibit less parasitic reactions with the electrolyte and an improved charge distribution homogeneity in secondary particles, leading to more stable cycling performance at high voltages (4.5 V vs Li/Li + ). Our synchrotron X-ray analyses reveal the underlying interplay between surface structure and bulk charge distribution in positive electrode materials particles. While strategies used to stabilize positive electrode materials through compositional control, surface modification, and electrolyte engineering have become mature, thermal processing can be advantageous to further improve positive electrode materials manufacturing.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Voltage waveform tailoring for high aspect ratio plasma etching of SiO 2 using Ar/CF 4 /O 2 mixtures: Consequences of ion and electron distributions on etch profiles

The quality of high aspect ratio (HAR) features etched into dielectrics for microelectronics fabrication using halogen containing low temperature plasmas strongly depends on the energy and angular distribution of the incident ions (IEAD) onto the wafer, as well as potentially that of the electrons (EEAD). Positive ions, accelerated to high energies by the sheath electric field, have narrow angular spreads and can penetrate deeply into HAR features. Electrons typically arrive at the wafer with nearly thermal energy and isotropic angular distributions and so do not directly penetrate deeply into features. These differences can lead to positive charging of the insides of the features that can slow etching rates and produce geometric defects such as twisting. In this work, we computationally investigated the plasma etching of HAR features into SiO 2 using tailored voltage waveforms in a geometrically asymmetric capacitively coupled plasma sustained in an Ar/CF 4 /O 2 mixture at 40 mTorr. The tailored waveform consisted of a sinusoidal wave and its higher harmonics with a fundamental frequency of 1 MHz. We found that some degree of control of the IEADs and EEADs is possible by adjusting the phase of higher harmonics φ through the resulting generation of electrical asymmetry and electric field reversal. However, the IEADs and EEADs cannot easily be separately controlled. The control of IEADs and EEADs is inherently linked. The highest quality feature was obtained with a phase angle φ = 0° as this value generated the largest (most negative) DC self-bias and largest electric field reversal for accelerating electrons into the feature. That said, the consequences of voltage waveform tailoring (VWT) on etched features are dominated by the change in the IEADs. Although VWT does produce EEADs with higher energy and narrower angular spread, the effect of these electrons on the feature compared to thermal electrons is not large. Finally, this smaller impact of VWT produced EEADs is attributed to thermal electrons being accelerated into the feature by electric fields produced by the positive in-feature charging.

47 OTHER INSTRUMENTATION↗
NASA NTRS2016

Degradation of Leakage Currents and Reliability Prediction for Tantalum Capacitors

Two types of failures in solid tantalum capacitors, catastrophic and parametric, and their mechanisms are described. Analysis of voltage and temperature reliability acceleration factors reported in literature shows a wide spread of results and requires more investigation. In this work, leakage currents in two types of chip tantalum capacitors were monitored during highly accelerated life testing (HALT) at different temperatures and voltages. Distributions of degradation rates were approximated using a general log-linear Weibull model and yielded voltage acceleration constants B = 9.8 +/- 0.5 and 5.5. The activation energies were Ea = 1.65 eV and 1.42 eV. The model allows for conservative estimations of times to failure and was validated by long-term life test data. Parametric degradation and failures are reversible and can be annealed at high temperatures. The process is attributed to migration of charged oxygen vacancies that reduce the barrier height at the MnO2/Ta2O5 interface and increase injection of electrons from the MnO2 cathode. Analysis showed that the activation energy of the vacancies' migration is ~ 1.1 eV.

acceleration factors↗
NASA NTRS2003

Characterization of Downstream Ion Energy Distributions From a High Current Hollow Cathode in a Ring Cusp Discharge Chamber

The presence of energetic ions produced by a hollow cathodes operating at high emission currents (greater than 10 Angstroms) has been documented in the literature. As part of an ongoing effort to uncover the underlying physics of the formation of these ions, ion efflux from a high current hollow cathode operating in an ion thruster discharge chamber was investigated. Using a spherical sector electrostatic energy analyzer located downstream of the discharge cathode, the ion energy distribution over a 0 to 60 eV energy range was measured. The sensitivity of the ion energy distribution function to zenith angle was also assessed at 3 different positions: 0, 15, and 25 degrees. The measurements suggest that the majority of the ion current at the measuring point falls into the analyzer with an energy approximately equal to the discharge voltage. The ion distribution, however, was found to be quite broad. The high energy tail of the distribution function tended to grow with increasing discharge current. Sensitivity of the profiles to flow rate at fixed discharge current was also investigated. A simple model is presented that provides a potential mechanism for the production of ions with energies above the discharge voltage.

Foster, John E.↗
DOE OSTI2022

DLMP of Competitive Markets in Active Distribution Networks: Models, Solutions, Applications, and Visions

Traditionally, the electric distribution system operates with uniform energy prices across all system nodes. However, as the adoption of distributed energy resources (DERs) propels a shift from passive to active distribution network (ADN) operation, a distribution-level electricity market has been proposed to manage new complexities efficiently. In addition, distribution locational marginal price (DLMP) has been established in the literature as the primary pricing mechanism. The DLMP inherits the LMP concept in the transmission-level wholesale market but incorporates characteristics of the distribution system, such as high $R/X$ ratios and power losses, system imbalance, and voltage regulation needs. The DLMP provides a solution that can be essential for competitive market operation in future distribution systems. This article first provides an overview of the current distribution-level market architectures and their early implementations. Next, the general clearing model, model relaxations, and DLMP formulation are comprehensively reviewed. The state-of-the-art solution methods for distribution market clearing are summarized and categorized into centralized, distributed, and decentralized methods. Then, DLMP applications for the operation and planning of DERs and distribution system operators (DSOs) are discussed in detail. Finally, visions of future research directions and possible barriers and challenges are presented.

42 ENGINEERING↗
DOE OSTI2021

A Zonal Volt/VAR Control Mechanism for High PV Penetration Distribution Systems

This paper presents a zonal Volt/VAR control scheme for regulating voltage in unbalanced 3-phase distribution systems using inverter-based resources (IBR). First, the dependency between nodal voltage changes and IBR reactive power injections is derived via voltage sensitivity studies. Then, a fast-incremental clustering method is used to divide the distribution circuit into weakly-coupled zones based on correlations between nodal voltage sensitivities. The weak-coupling allows the voltage to be regulated independently within each zone using a rule-based voltage controller to dispatch IBR for voltage corrections. Simulation results on actual distribution feeder show that the proposed zone-based Volt/VAR control method maintains system voltages within their operational limits while reducing the runtime of the Volt/VAR controller from tens of second to a couple of milliseconds compared with centralized, optimization-based Volt/VAR control methods.

Alrushoud, Asmaa↗
DOE OSTI2021

OCHRE: The Object-oriented, Controllable, High-resolution Residential Energy Model for Dynamic Integration Studies

Electrification and the growth of distributed energy resources (DERs), including flexible loads, are changing the energy landscape of electric distribution systems and creating new challenges and opportunities for electric utilities. Changes in demand profiles require improvements in distribution system load models, which have not historically accounted for device controllability or impacts on customer comfort. Although building modeling research has focused on these features, there is a need to incorporate them into distribution load models that include DERs and can be used to study grid-interactive buildings. In this paper, we present the Object-oriented, Controllable, High-resolution Residential Energy (OCHRE) model. OCHRE is a controllable thermal-electric residential energy model that captures building thermal dynamics, integrates grid-dependent electrical behavior, contains models for common DERs and end-use loads, and simulates at a time resolution down to 1 minute. It includes models for space heaters, air conditioners, water heaters, electric vehicles, photovoltaics, and batteries that are externally controllable and integrated in a co-simulation framework. Using a proposed zero energy ready community in Colorado, we co-simulate a distribution grid and 498 all-electric homes with a diverse set of efficiency levels and equipment properties. We show that controllable devices can reduce peak demand within a neighborhood by up to 73% during a critical peak period without sacrificing occupant comfort. We also demonstrate the importance of modeling load diversity at a high time resolution when quantifying power and voltage fluctuations across a distribution system.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS2006

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗
DOE OSTI2022

Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Polarization-induced (Pi) distributed or bulk doping in GaN, with a zero dopant ionization energy, can reduce temperature or frequency dispersions in impurity-doped p–n junctions caused by the deep-acceptor-nature of Mg, thus offering GaN power devices promising prospects. Before comprehensively assessing the benefits of Pi-doping, ideal junction behaviors and high-voltage capabilities should be confirmed. In this work, we demonstrate near-ideal forward and reverse I–V characteristics in Pi-doped GaN power p–n diodes, which incorporates linearly graded, coherently strained AlGaN layers. Hall measurements show a net increase in the hole concentration of 8.9 × 1016 cm−3 in the p-layer as a result of the polarization charge. In the Pi-doped n-layer, a record-low electron concentration of 2.5 × 1016 cm−3 is realized due to the gradual grading of Al0-0.72GaN over 1 μm. The Pi-doped p–n diodes have an ideality factor as low as 1.1 and a 0.10 V higher turn-on voltage than the impurity-doped p–n diodes due to the increase in the bandgap at the junction edge. A differential specific on-resistance of 0.1 mΩ cm2 is extracted from the Pi-doped p–n diodes, similar with the impurity-doped counterpart. The Pi-doped diodes show an avalanche breakdown voltage of ∼1.25 kV, indicating a high reverse blocking capability even without an ideal edge-termination. This work confirms that distributed Pi-doping can be incorporated in high-voltage GaN power devices to increase hole concentrations while maintaining excellent junction properties.

Nomoto, Kazuki↗
DOE OSTI2024

Voltage Mining for (De)lithiation-Stabilized Cathodes and a Machine Learning Model for Li-Ion Cathode Voltage

Advances in lithium-metal anodes have inspired interest in discovery of Li-free cathodes, most of which are natively found in their charged state. This is in contrast to today's commercial lithium-ion battery cathodes, which are more stable in their discharged state. In this study, we combine calculated cathode voltage information from both categories of cathode materials, covering 5577 and 2423 total unique structure pairs, respectively. The resulting voltage distributions with respect to the redox pairs and anion types for both classes of compounds emphasize design principles for high-voltage cathodes, which favor later Period 4 transition metals in their higher oxidation states and more electronegative anions like fluorine or polyanion groups. Generally, cathodes that are found in their charged, delithiated state are shown to exhibit voltages lower than those that are most stable in their lithiated state, in agreement with thermodynamic expectations. Deviations from this trend are found to originate from different anion distributions between redox pairs. In addition, a machine learning model for voltage prediction based on chemical formulas is trained and shows state-of-the-art performance when compared to two established composition-based ML models for material properties predictions, Roost and CrabNet.

25 ENERGY STORAGE↗
DOE OSTI2021

Probabilistic Voltage Sensitivity based Preemptive Voltage Monitoring in Unbalanced Distribution Networks

With increasing penetration of renewable energy and active consumers, control and management of power distribution networks has become challenging. Renewable energy sources can cause random voltage fluctuations as their output power depends on weather conditions. Conventional voltage control schemes such as tap changers and capacitor banks lack the foresight required to quickly alleviate voltage violations. Thus, there is an urgent need for effective approaches for predicting and mitigating voltage violations as a result of random fluctuations in power injections. This work proposes a novel voltage monitoring approach based on low-complexity, data-driven probabilistic voltage sensitivity analysis. The usefulness of this work is not only in predicting voltage violations in unbalanced distribution grids, but also in opening up the door for optimal voltage control. Using system data and forecasts, the proposed approach predicts the distribution of system node voltages which is then used to to identify nodes that may violate the nominal operational limits with high probability. The method is tested on the IEEE 37 node distribution system considering integrated distributed solar energy sources. The method is validated against the classic load flow based method and offers over 95% accuracy in predicting voltage violations.

Abujubbeh, Mohammad↗
NASA NTRS1979

Current leakage for low altitude satellites - Modeling applications

To simulate the behavior of a high voltage solar cell array in the ionospheric plasma environment, the large (90 ft x 55 ft diameter) vacuum chamber was used to measure the high-voltage plasma interactions of a 3 ft x 30 ft conductive panel. The chamber was filled with Nitrogen and Argon plasma at electron densities of up to 1,000,000 per cu cm. Measurements of current flow to the plasma were made in three configurations: (a) with one end of the panel grounded, (b) with the whole panel floating while a high bias was applied between the ends of the panel, and (c) with the whole panel at high negative voltage with respect to the chamber walls. The results indicate that a simple model with a constant panel conductivity and plasma resistance can adequately describe the voltage distribution along the panel and the plasma current flow. As expected, when a high potential difference is applied to the panel ends more than 95% of the panel floats negative with respect to the plasma.

Konradi, A.↗
DOE OSTI2024

Method for Spatiotemporal Solar Power Profile Estimation for a Proposed U.S.–Caribbean–South America Super Grid under Hurricanes

Solar photovoltaic (PV) generation technology stands out as a scalable and cost-effective solution to enable the transition toward decarbonization. However, PV solar output, beyond the daily solar irradiance variability and unavailability during nights, is very sensitive to weather events like hurricanes. Hurricanes nucleate massive amounts of clouds around their centers, shading hundreds of kilometers in their path, reducing PV power output. This research proposes a spatiotemporal method, implemented in MATLAB R2023b coding, to estimate the shading effect of hurricanes over a wide distribution of PV solar plants connected to a high-voltage power infrastructure called the U.S.–Caribbean–South America super grid. The complete interconnection of the U.S., the Caribbean, and South America results in the lowest power valley levels, i.e., an overall percentual reduction in PV power output caused by hurricane shading. The simulations assess the impact of hurricanes in 10 synthetic trajectories spanning from Texas to Florida. The Caribbean would also experience lower power valleys with expanded interconnectivity schemes. The U.S.–Caribbean–South America super grid reduces Caribbean variability from 37.8% to 8.9% in the case study. The proposed spatiotemporal method for PV power profile estimation is a valuable tool for future solar power generation expansion, transmission planning, and system design considering the impact of hurricanes.

14 SOLAR ENERGY↗
NASA NTRS1982

Airphoto Interpretation and the Selection of a Powerchain Right-of-way in Vermont

The analysis of 1:42,000 scale color infrared aerial photographs was performed to acquire data on land use, wetlands, geology, population distribution, and transportation for the purpose of locating a high voltage powerline. Maps and reference literature augmented these data with information concerning historic sites, biologically or geologically sensitive areas, planning, and zoning. With the combined data, twenty-nine corridor segments, one mile wide and varying lengths were identified.

Klunder, H.↗
NASA NTRS1997

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗
NASA NTRS2004

Reproducible Growth of High-Quality Cubic-SiC Layers

Semiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗