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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

High efficiency GaAs/Ge monolithic tandem solar cells

Two-terminal monolithic tandem cells consisting of a GaAs solar cell grown epitaxially on a Ge solar cell substrate are very attractive for space applications. Tandem cells of GaAs grown by metal-organic chemical vapor deposition on thin Ge were investigated to address both higher efficiency and reduced weight. Two materials growth issues associated with this heteroepitaxial system, autodoping of the GaAs layers by Ge and diffusion of Ga and As into the Ge substrate, were addressed. The latter appears to result in information of an unintentional p-n junction in the Ge. Early simulator measurements gave efficiencies as high as 21.7 percent for 4 cm2 GaAs/Ge cells, but recent high-altitude testing has given efficiencies of 18 percent. Sources of errors in simulator measurements of two-terminal tandem cells are discussed. A limiting efficiency of about 36 percent for the tandem cell at AMO was calculated. Ways to improve the performance of present cells, primarily by increasing the Isc and Voc of the Ge cell, are proposed.

Tobin, S. P.↗
DOE OSTI2023

High Efficiency Multijunction Devices: Solar Cells, Thermophotovoltaics, LEDs

High-efficiency III-V multijunction solar cells require multiple alloys with optimal bandgaps and excellent material quality. However, many useful alloys are lattice-mismatched to available substrates, and require strain-engineering tricks to enable efficient use. To this extent, we have developed low-dislocation density metamorphic material and optically-thick stress-balanced superlattices, enabling access to a wide variety of III-V alloys. Combined with transparent tunnel junctions, these components allow optimizing multijunction devices for a variety of applications. We have designed multijunction cells for the G173G-terrestrial and AM0-space spectra with record 39.5% and 34.2% efficiency, respectively, and also thermophotovoltaic cells for blackbody spectra that reach over 40% TPV-efficiency. Finally, using these PV components, we demonstrate a multijunction LED with high quantum efficiency.

high-efficiency↗
NASA NTRS1985

High-efficiency device research

Progress on research in high-efficiency silicon solar cells is presented. Topics addressed include: recombination measurement techniques, doped crystals, minority carrier transport, oxygen process in solar cells, solar cell models, loss mechanics in solar cells, high-efficiency metal insulators, dendritic web cells, and surface and bulk loss reduction by low-energy hydrogen doping.

Burger, D. R.↗
NASA NTRS1985

High-efficiency module design

Progress on the development of a high efficiency module is described. The effort includes development of high efficiency cells using crystalline silicon wafers from float zone silicon. Module-size cells, 53 sq cm in area, were fabricated with efficiency of 18%. Operating temperature reduction is also studied.

Spitzer, M. B.↗
NASA NTRS1994

Design of high-efficiency, radiation-hard, GaInP/GaAs solar cells

In recently years, Ga(0.5)In((0.5)P/GaAs cells have drawn increased attention both because of their high efficiencies and because they are well suited for space applications. They can be grown and processed as two-junction devices with roughly twice the voltage and half the current of GaAs cells. They have low temperature coefficients, and have good potential for radiation hardness. We have previously reported the effects of electron irradiation on test cells which were not optimally designed for space. From those results we estimated that an optimally designed cell could achieve 20 percent after irradiation with 10(exp 15) cm(exp -2) 1 MeV electrons. Modeling studies predicted that slightly higher efficiencies may be achievable. Record efficiencies for EOL performance of other types of cells are significantly lower. Even the best Si and InP cells have BOL efficiencies lower than the EOL efficiency we report here. Good GaAs cells have an EOL efficiency of 16 percent. The InP/Ga(0.5)In(0.5)As two-junction, two-terminal device has a BOL efficiency as high as 22.2 percent, but radiation results for these cells were limited. In this study we use the previous modeling and irradiation results to design a set of Ga(0.5)In(0.5)P/GaAs cells that will demonstrate the importance of the design parameters and result in high-efficiency devices. We report record AMO efficiencies: a BOL efficiency of 25.7 percent for a device optimized for BOL performance and two of different designs with EOL efficiencies of 19.6 percent (at 10(exp 15) cm(exp -2) 1MeV electrons). We vary the bottom-cell base doping and the top-cell thickness to show the effects of these two important design parameters. We get an unexpected result indicating that the dopant added to the bottom-cell base also increases the degradation of the top cell.

Kurtz, Sarah R.↗
DOE OSTI2025

Laboratory Testing and Performance Characterization of the High Efficiency Dehumidification System (HEDS) Technology

The high efficiency dehumidification system (HEDS) is a unique air handling unit (AHU) design with two water coils. Connected in series, these water coils can sensibly reheat the airstream after it is cooled and dehumidified, thereby mitigating (or sometimes eliminating) the need for conventional sensible reheat with additional energy from hot water, electric resistance or steam coils. Another unique design feature is the size of the HEDS primary cooling coil. While typical AHU cooling coils have a 6-row geometry, the HED's cooling coil has a deeper 10-row geometry enabling discharge air dew point temperatures at or below 55 degrees F despite warmer chilled water supply temperatures approaching (sometimes exceeding) 50 degrees F. The ability to meet acceptable discharge air dew points with warmer chilled water supply temperatures improves both operational efficiency and system resilience against chilled water plant operational or control issues. This report summarizes the 59 steady-state test results that form a comprehensive performance map of the HEDS technology including its reheat capability. The breadth of outdoor air conditions and flow rates over which the HEDS technology was tested and characterized encompasses the unit 1) operating as a dedicated outdoor air system or mixed air system and 2) controlled with constant air volume or variable air volume fan control.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
NASA NTRSDate not supplied

Electromagnetic Redesign of NASA’s High Efficiency Megawatt Motor

NASA’s High Efficiency Megawatt Motor (HEMM) is being developed to achieve the performance needed by single aisle class electrified aircraft. It is a 1.4 MW electric machine designed as a generator for NASA’s STARC-ABL concept vehicle. It has performance objectives of greater than 16 kW/kg electromagnetic specific power and efficiency of greater than 98%. A significant flaw in the preliminary electromagnetic design of HEMM was recently discovered. The stator teeth in the preliminary design cause the magnetic flux in the rotating components of HEMM to oscillate at a very high frequency (12,240 Hz). Two independent energy loss analyses are presented to show that the frequency is high enough to cause eddy current losses that significantly exceed the rotor’s loss limit (50 W), despite the very small magnitude of this flux oscillation (<0.01 T). To eliminate these rotor losses, while continuing to meet the target performance, it was determined that the stator teeth needed to be removed and the electromagnetic geometry of the motor needed to be revised. The revised, slotless HEMM motor design is summarized. Sensitivity of the new design to key unknown variables such as the temperature of and number of turns in the superconducting rotor coils and the stator winding’s average temperature.

Thomas T Tallerico↗
NASA NTRSDate not supplied

Risk Reduction Testing of Superconducting Coils for the High Efficiency Megawatt Motor

Second generation high temperature superconducting coils provide a very attractive level of performance for use in the field winding of electric machines for aircraft. Aside from maintaining these coils at cryogenic temperatures, much care must be taken to prevent damaging these relatively fragile materials due to excessive stress. Thermal stresses due to temperature cycling and mechanical stresses due to centrifugal forces are the most critical for the High Efficiency Megawatt Motor. This paper summarizes two test campaigns that were undertaken to reduce the risks posed by these loads. In one campaign, several superconducting coils were fabricated, thermally cycled up to 50~times, and electrically tested in liquid nitrogen to assess the change in superconductivity metrics throughout thermal cycling. In the other campaign, a full-scale superconducting coil was fabricated, a test article was designed to produce a representative stress environment in the coil, the test article and coil were rotated at room temperature up to a speed of 11,800~rpm, and the superconductivity metrics were measured in liquid nitrogen before and after each rotation. The experimental results demonstrate that the superconducting coils manufactured in house can survive both thermal cycling and high speed rotation with no appreciable degradation in superconducting performance.

partially superconducting electric machine↗
NASA NTRS1974

Highly efficient special sound absorbing solutions

Highly efficient special sound absorbing structures with the following criteria are considered: (1) A distribution surface of the sound absorbing material greater than that of the building element on which the structure is placed; (2) The highest possible absorption coefficient in the widest possible frequency band; and (3) adaptability to different construction and aesthetic conditions.

Ionescu, M.↗
NASA NTRS2002

Efficient High Order Central Schemes for Multi-Dimensional Hamilton-Jacobi Equations: Talk Slides

This viewgraph presentation presents information on the attempt to produce high-order, efficient, central methods that scale well to high dimension. The central philosophy is that the equations should evolve to the point where the data is smooth. This is accomplished by a cyclic pattern of reconstruction, evolution, and re-projection. One dimensional and two dimensional representational methods are detailed, as well.

Bryson, Steve↗
DOE OSTI2024

High Efficiency Powertrain for Heavy Duty Trucks Using Silicon Carbide (SiC) Inverter

The objective of the High Efficiency Propulsion (HEP) project is to research, develop, and demonstrate life cycle cost-effective Class 8 battery electric vehicles utilizing an 800 V high efficiency and compact 250 kW continuous power SiC inverter designed to support the commercial operations of the high continuous loads and challenging shock/vibration environment of heavy-duty trucks with an electrified axle specifically designed for high performance and efficiency in battery-electric Class 8 trucks used in medium range (~250 miles) distribution, and compared to the baseline Peterbilt 579 electric truck fleet performance using an IGBT inverter. The project was split into 3 budget periods, with the first two being design and development focused, and the final one is an on-vehicle demonstration phase of the high efficiency SiC traction drive inverter with daily mileage accumulation.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2022

High Efficiency InGaN LEDs Emitting in Green, Amber and Beyond (Final Report)

This project focuses on developing high efficiency light emitting diodes (LEDs) with green, amber, and longer wavelengths using two compatible material systems based on III-nitride and II-IV-nitride semiconductor heterostructures. The proposed approach uses low-indium-content InGaN and ZnGeN 2 or ZnSnN 2 heterostructure quantum wells (QWs) as the active regions for high efficiency green and amber LEDs, and therefore to advance high efficiency color-mixed white LED technology. This approach takes advantage of the increased flexibility, afforded by the incorporation of the II-IV-nitrides into the III-nitride layers, to tune the QW active region to lower the emission wavelengths and to increase the electron-hole wave function overlap. This strategy paves a new way to extend the InGaN QW LED emission wavelength without using high-indium-content InGaN. An industrially preferable metalorganic chemical vapor deposition (MOCVD) method was used to develop the growth of ZnGeN 2 and ZnSnN 2 that are compatible with the InGaN growth. The unique dual chamber MOCVD instrument at OSU was used in this project. This program created an opportunity for the two institutions (The Ohio State University and Case Western Reserve University) with complementary expertise to perform this work. Two graduate students (Md Rezaul Karim (OSU) and Benthara Hewage Dinushi Jayatunga (CWRU)) gained experience in MOCVD growth and various characterization methods including scanning electron microscopy, x-ray diffraction spectroscopy, x-ray photoemission spectroscopy, Hall measurements, cathodoluminescence and photoluminescence. Both students successfully defended their PhD dissertations in April/May 2021. Both Karim and Jayatunga have joined Intel as engineers in June/July 2021. Another two graduate students Kaitian Zhang (OSU) and Chenxi Hu (CWRU) joined the project team since spring 2021 to continue on this project. They were trained on MOCVD epitaxy of InGaN QWs and materials characterization including SEM, AFM, PL, CL, XRD, Hall measurements and electroluminescence. A third student, Vijay Gopal Thirupakuzi Vangipuram (OSU), who joined the group in fall 2021 to perform LED fabrication and characterization. The key research accomplishments of the project include: (1) Successful development of MOCVD epitaxy of single crystalline ZnGeN 2 and ZnSnN 2 . MOCVD growth parameters that determine the stoichiometry of ZnGeN 2 and ZnSnN 2 films were identified. (2) Experimentally determined the band offsets between GaN/ZnGeN 2 and GaN/ZnGaSnN 2 hetero-interfaces, which agree very well with the theoretical predictions. (3) Demonstrated the incorporation of thin ZnGeN 2 layer in InGaN QWs. Proof-of-concept of the InGaN-ZnGeN 2 QW design demonstrated as much as 80 nm of red shift without increasing In composition or QW thickness. (4) InGaN/ZnGeN 2 QWs emitting at 480 nm achieved IQE of 47%. Resulted from this project, 7 journal articles were published, and 9 conference papers were presented.

36 MATERIALS SCIENCE↗
NASA NTRS1980

Status of Rockwell-ERC high efficiency solar cell programs

Programs aimed at developing large area, high efficiency GaAs heteroface cells for low concentration space applications and high concentration terrestrial applications as well as other programs aimed at developing high efficiency multicolor devices for use in similar applications are described. An additional program aimed at achieving improved power to weight ratio by parting thin film solar cells from their growth substrates prior to their incorporation into an array assembly is also described. There is potential for multiple reuse of the substrates which could lead to reduced costs for such devices. Highlights of these programs and their interrelated contributions toward the goals of reducing specific weight, volume and cost of photovoltaic space power systems are discussed. Overall goals are summarized and current programs and their funding sources are listed.

Zehr, S. W.↗
DOE OSTI2026

Data Associated with "Identifying Suitable Front Contacts for High-Efficiency Cd(Se,Te) Solar Cells on Space-Qualified Cover Glass"

This is data associated with the publication " Identifying Suitable Front Contacts for High-Efficiency Cd(Se,Te) Solar Cells on Space-Qualified Cover Glass " by Aesha P. Patel, Ryan Muzzio, Matthew R. Young, Robert Morrissey, Suresh Chaulagain, B. Edward Sartor, Prabodika N. Kaluarachchi, Christian Velez, Joshua A. Brown, Joel N. Duenow, Stephen Glynn, Michael J. Heben, Zhaoning Song, Nikolas J. Podraza, Adam B. Phillips, Randy J. Ellingson, Matthew O. Reese. All data associated with each figure in the manuscript and supplementary should be available in this dataset. A readme file is also included to provide some guidance. Abstract: Deployment of photovoltaics in space requires devices that combine high-efficiency, low areal mass, and resilience to harsh environments. Historically, high-efficiency multijunction III–V materials have dominated space power systems; however, their high cost and limited manufacturing throughput motivate the exploration of scalable alternatives. While CdTe-based thin-film photovoltaics offer an attractive option, their performance on non-conventional substrates can suffer from front-contact instability under higher-temperature processing. Here, the role of front-contact chemistry in limiting cell performance is investigated using CdTe-based devices fabricated on 150 μm thick Ceria-doped space-qualified 0214 Corning glass. A matrix of four transparent conducting oxides (TCOs: CTO, AZO, ITO, IZO) combined with two n-type emitters (MZO, IGO) reveals chemical stability at the front interface—rather than absorber composition alone—governs recombination losses, voltage deficits, and device reproducibility. Chemically stable front-contact combinations suppress elemental diffusion and interfacial degradation, resulting in significantly improved carrier lifetimes and junction quality. These insights are validated through record-certified Cd(Se,Te) cell efficiencies of 18.4% under AM1.5G and 16.2% under AM0 illumination on ultra-thin glass. Beyond CdTe, this work provides a general framework for the rational selection of TCO/emitter interfaces in superstrate thin-film photovoltaics, including emerging technologies like metal halide perovskites, while enabling high-efficiency, lightweight photovoltaics for space applications.

14 SOLAR ENERGY↗
NASA NTRS1991

High-efficiency 20 GHz traveling wave tube development for space communications

A 75 watt CW high efficiency helix TWT operating at 20 GHz was developed for satellite communication systems. The purpose was to extend the performance capabilities of helix TWTs by using recent technology developments. The TWT described is a unique design because high overall efficiency is obtained with a low perveance beam. In the past, low perveance designs resulted in low beam efficiencies. However, due to recent breakthoughs in diamond rod technology and in collector electrode materials, high efficiencies can now be achieved with low perveance beams. The advantage of a low perveance beam is a reduction in space charge within the beam which translates to more efficient collector operation. In addition, this design incorporates textured graphite electrodes which further enhance collector operation by suppressing backstreaming secondaries. The diamond supported helix circuit features low RF losses, high interaction impedance, good thermal handling capability and has been designed to compensate for the low perveance beam. One more discussed tube feature is the use of a velocity taper in the output helix that achieves low signal distortion while maintaining high efficiency.

Aldana, S. L.↗
NASA NTRS2007

Design and Fabrication of High-Efficiency CMOS/CCD Imagers

An architecture for back-illuminated complementary metal oxide/semiconductor (CMOS) and charge-coupled-device (CCD) ultraviolet/visible/near infrared- light image sensors, and a method of fabrication to implement the architecture, are undergoing development. The architecture and method are expected to enable realization of the full potential of back-illuminated CMOS/CCD imagers to perform with high efficiency, high sensitivity, excellent angular response, and in-pixel signal processing. The architecture and method are compatible with next-generation CMOS dielectric-forming and metallization techniques, and the process flow of the method is compatible with process flows typical of the manufacture of very-large-scale integrated (VLSI) circuits. The architecture and method overcome all obstacles that have hitherto prevented high-yield, low-cost fabrication of back-illuminated CMOS/CCD imagers by use of standard VLSI fabrication tools and techniques. It is not possible to discuss the obstacles in detail within the space available for this article. Briefly, the obstacles are posed by the problems of generating light-absorbing layers having desired uniform and accurate thicknesses, passivation of surfaces, forming structures for efficient collection of charge carriers, and wafer-scale thinning (in contradistinction to diescale thinning). A basic element of the present architecture and method - the element that, more than any other, makes it possible to overcome the obstacles - is the use of an alternative starting material: Instead of starting with a conventional bulk-CMOS wafer that consists of a p-doped epitaxial silicon layer grown on a heavily-p-doped silicon substrate, one starts with a special silicon-on-insulator (SOI) wafer that consists of a thermal oxide buried between a lightly p- or n-doped, thick silicon layer and a device silicon layer of appropriate thickness and doping. The thick silicon layer is used as a handle: that is, as a mechanical support for the device silicon layer during micro-fabrication.

Pain, Bedabrata↗
NASA NTRS1985

Processing technology for high efficiency silicon solar cells

Recent advances in silicon solar cell processing have led to attainment of conversion efficiency approaching 20%. The basic cell design is investigated and features of greatest importance to achievement of 20% efficiency are indicated. Experiments to separately optimize high efficiency design features in test structures are discussed. The integration of these features in a high efficiency cell is examined. Ion implantation has been used to achieve optimal concentrations of emitter dopant and junction depth. The optimization reflects the trade-off between high sheet conductivity, necessary for high fill factor, and heavy doping effects, which must be minimized for high open circuit voltage. A second important aspect of the design experiments is the development of a passivation process to minimize front surface recombination velocity. The manner in which a thin SiO2 layer may be used for this purpose is indicated without increasing reflection losses, if the antireflection coating is properly designed. Details are presented of processing intended to reduce recombination at the contact/Si interface. Data on cell performance (including CZ and ribbon) and analysis of loss mechanisms are also presented.

Spitzer, M. B.↗