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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Co 3 Ga 2 Ge 5 : Probing site mixing of the Ru 3 Sn 7 structure type with elements difficult to distinguish by diffraction

Co 3 Ga 2 Ge 5 was synthesized through arc-melting stoichiometric ratios of the elements, and a Ru 3 Sn 7 -type structure was confirmed by X-ray diffraction. Because Co 3 Ga 2 Ge 5 contains Ga and Ge, which have very similar X-ray and neutron scattering factors, any Ga/Ge crystallographic site preference cannot be determined with diffraction alone. The purpose of this study is to highlight the importance of using multiple techniques to characterize otherwise structurally ambiguous intermetallic compounds. Here, we utilize 71 Ga nuclear magnetic resonance spectroscopy and an analysis of the X-ray absorption fine structure to clarify the amount of Ga/Ge site mixing. Our combined use of X-ray diffraction and spectroscopy provides a comprehensive structural analysis of Ga site mixing across the Ge crystallographic sites, enhancing the understanding of the structure and properties of Co 3 Ga 2 Ge 5 .

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ga by Materials Project

Ga is Copper structured and crystallizes in the tetragonal I4/mmm space group. The structure is two-dimensional and consists of two Ga sheets oriented in the (0, 0, 1) direction. Ga is bonded in a distorted square co-planar geometry to four equivalent Ga atoms. All Ga–Ga bond lengths are 2.80 Å.

36 MATERIALS SCIENCE↗
NASA NTRS2021

GA-ASI Final Report and Program Wrap-up for NASA System Integration and Operationalization (SIO)

The NASA SIO demonstration flight of April 3, 2020 represents a successful culmination of 18 months of coordinated effort between GA-ASI, NASA, the FAA, Collins Aerospace, and Honeywell Aerospace to operate a Medium Altitude, Long Endurance (MALE) Unmanned Aircraft System (UAS) safely in the National Airspace System (NAS) using industry leading prototype technologies. The GA-ASI team consisted of technical experts, program managers, engineers, mechanics, flight technicians, flight crews, and numerous other subject matter experts. This final report describes the most significant and potentially impactful aspects of the planning, integration, test, and flight aspects of this effort. GA-ASI successfully integrated the key technologies needed for UAS to fly in the NAS onto our prototype SkyGuardian UAS, which was designed to meet the most stringent airworthiness standards applicable to an aircraft of its size category. A proven Detect and Avoid (DAA) system, developed by GA-ASI and utilizing Honeywell Aerospace technology was integrated onto SkyGuardian for the first time, along with datalink radios from Collins Aerospace that meet the new civil standard for Control and Non-Payload Communication (CNPC) links. GA-ASI also obtained approvals from the FAA and FCC to operate the reconfigured UAS. The SIO demonstration flight represented a commercial aerial surveying operation conducted at medium altitude (>10,000ft above mean sea level). The aircraft’s onboard sensors were used to capture photographic, infrared and radar imagery of public and commercial infrastructure and land, and to subsequently produce the types of data products that would provide business value to potential customers. These survey services would supplement or replace services currently provided by manned airplanes and helicopters, small drones or satellites. A “virtual” mission was also planned, to show what additional survey data could have been captured during the flight if additional sensors had been installed on the aircraft’s external hardpoints. This revision of the final report focuses on information of value to the wider UAS community, and avoids propriety data to facilitate broad dissemination. It also includes a description of GA-ASI’s engagement with the FAA following the SIO flight, which led to the award of an updated Special Airworthiness Certificate in the Experimental Category (SAC-EC) and a Certificate of Waiver or Authorization (COA) allowing operation of the SkyGuardian UAS using its DAA system to satisfy right-of-way rules, instead of a chase plane. The associated operational limitations are described to illustrate the further steps that would be needed to remove those limitations for unhindered commercial operations.

Flight demonstration↗
DOE OSTI2024

Trap‐Engineering the Persistent Luminescence of Ca 3 Ga 4 O 9 :Tb 3+ via Al 3+ Substitution for Optical Data Storage

Abstract Optically stimulated luminescence (OSL) materials hold great potential for optical data storage (ODS) and anticounterfeiting applications. Nevertheless, the scarcity of suitable luminescent materials with deep‐level traps remains a significant obstacle. Herein, a host substation strategy have been employed to tune the persistent luminescence (PersL) and OSL properties of Ca 3 Ga 4 O 9 :Tb 3+ by Al 3+ substitution through trap engineering and demonstrated their potential. Specifically, the photoluminescence of the Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ of Tb 3+ is first investigated due to its different occupancies of Ca 2+ . The influence of host substitution on the crystal structure, trap depth, trap density, PersL, and OSL properties have further investigated. A series of strong PersL and OSL peaks from the Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ with bluish‐green emissions have been observed. The Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ have shown controllable photon release upon thermal and optical stimuli, enhancing their performance for ODS. Thermally stimulated luminescence suggests that vacancy and defect concentrations inside the Ca 3‐x% (Ga 1‐y% Al y% ) 4 O 9 :x%Tb 3+ can be manipulated by Tb 3+ doping and Al 3+ substitution, which ultimately leads to the formation of deep traps and a broad distribution of traps with increased deep trap concentration. The work demonstrates that trap engineering through Al 3 ⁺ substitution is an effective method for tuning PersL and OSL properties of Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ for ODS.

Abeywickrama, Thulitha M. [Department of Chemistry↗
DOE OSTI2020

Enhanced negative thermal expansion of boron-doped Fe 43 Mn 28 Ga 28.97 B 0.03 alloy

Enhanced negative thermal expansion (NTE) properties are achieved by introducing a little amount of boron in the Fe 43 Mn 28 Ga 28.97 B 0.03 alloy. As a result, this alloy shows a giant NTE coefficient of alpha(1) = -79.7 x 10 -6 K -1 in a wide temperature range from 277 K to 136 K. Compared to the NTE characteristics in Fe 43 Mn 28 Ga 29 , the NTE operation temperature window has expanded by 74% with the corresponding coefficient of thermal expansion increased by 57% within the NTE temperature window for the boron-doped Fe 43 Mn 28 Ga28.97B0.03. Additionally, in-situ synchrotron high-energy X-ray diffraction results suggest that by boron substitution, the large unit cell volume change across martensitic transformation and the wide phase transition temperature interval are responsible for the pronounced NTE behavior in Fe 43 Mn 28 Ga 28.97 B 0.03 . Moreover, for the Fe 43 Mn 28 Ga 28.97 B 0.03 NTE material, the compressive strength and strain are significantly improved compared with that of Fe 43 Mn 28 Ga 29 . The present study indicates that Fe 43 Mn 28 Ga 28.97 B 0.03 with enhanced NTE across martensitic transformation may be used for practical application as thermal-expansion compensators.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Unveiling the nature of Ga-based chalcogenides for electrical switching selectors

Three-dimensional phase-change memory with stackable crossbar architecture is a promising technology to meet the urgent demands for high-density storage and rapid information processing in the era of explosive data growth. The performance depends strongly on the properties of ovonic threshold switching (OTS) selectors, which control the on/off states of memory units. Amorphous GaS serves as an outstanding OTS material, distinguished by its sizable mobility gap and high crystallization temperature, while the underlying mechanism continues to be inadequately comprehended. Here, in this work, we systematically studied the structural and electronic properties of amorphous Ga-X (X = S/Se/Te) using first-principles calculations. The results show that Ga atoms adopt tetrahedral motifs, while S/Se/Te atoms predominantly exhibit the structure of a distorted triangular pyramid. This structural arrangement is ascribed to the substantial dative bonds formed by the lone-pair electrons of the anions and the vacant sp3 orbitals around Ga atoms. Large mobility gaps (e.g., GaS: 2.43 eV, GaSe: 1.76 eV, GaTe: 1.26 eV) and distinct mid-gap states (e.g., ∼0.66 eV above valence band tail) ensure that these three chalcogenide glasses can be switched on under an external electric field while effectively suppressing leakage current without a bias, and the defect electronic states originate from short, robust Ga-Ga bonds due to the formation of distorted chain-like local structures. Our research elucidates the mechanisms of amorphous Ga-X as OTS materials, enriching the spectrum of electrical switching selectors by incorporating III-VI chalcogenides. This inclusion offers novel opportunities for the refinement and optimization of high-density integrated memory systems.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Low-pressure methanol synthesis from CO 2 over metal-promoted Ni-Ga intermetallic catalysts

Ni-Ga and M-Ni-Ga (M = Au, Co, Cu) catalysts were evaluated for methanol synthesis from CO 2 at 10 bar and 200-270°C. The following trend in turnover frequency (TOF) for CO 2 hydrogenation was observed: AuNiGa > CuNiGa > NiGa > CoNiGa, where TOF increased with decreasing catalyst affinity for CO. The presence of a third metal was found to influence both the formation of the Ni-Ga intermetallic phase as well as the number of available sites for CO chemisorption. Phase formation, catalyst composition and stability were evaluated using therm ogravimetric analysis (TGA), X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning transmission electron microscopy and energy dispersive X-ray spectroscopy (STEM-EDX). Au-Ni-Ga, which showed a nearly 4-fold improvement in TOF at 263°C and 10 bar compared to Ni-Ga, consisted of Ni 3 Ga particles decorated with Au, as evidenced by post catalysis characterization.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Engineering shallow and deep level defects in $\kappa$-Ga 2 O 3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments

Orthorhombic gallium oxide (κ-Ga 2 O 3 ) is an ultra-wide bandgap semiconductor with great potential in new generation electronics. Its application is hindered at present by the limited physical understanding of the relationship between synthesis and functional properties. This work discusses the effects of growth method (metal-organic vapour phase epitaxy and molecular beam epitaxy) as well as annealing treatments in different atmospheres (O 2 , H 2 ) on point defects in κ-Ga 2 O 3 layers epitaxially grown on c-plane sapphire. Comprehensive experimental characterization by X-ray diffraction, photo current-as well as photoluminescence excitation spectroscopy, and X-ray photo electron spectroscopy is combined with first principles calculations of the point defects’ formation and complex-dissociation energies. We demonstrate that for κ-Ga 2 O 3 the concentration of shallow and deep level defects can be sensitively controlled through annealing treatments at temperatures (T = 500 °C) well below the thermal stability threshold of this polymorph. In particular, our results suggest that hydrogen-related defects (e.g., H-interstitials, Ga-vacancies—H complexes) play a key role in this process. While we provide direct exemplary implications of our results for the performances of κ-Ga 2 O 3 based photodetectors, these findings are predicted to impact further application fields of κ-Ga 2 O 3 , such as high electron mobility transistors or memory devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Intrinsic property of defective β-Ga 2 O 3 to self-heal under ionizing irradiation

Damage evolution and phase stability in defective β-Ga 2 O 3 and an irradiation-converted γ-Ga 2 O 3 layer have been studied under ionizing irradiation at 300 K. By exploring athermal nonequilibrium processes in β-Ga 2 O 3 , we succeed in identifying a self-healing mechanism that enables recovery pre-existing damage, characterized by a recovery cross-section of ~0.17 nm 2 . Remarkably, this study further demonstrates that the crystallinity of the irradiation-converted γ-Ga 2 O 3 layer improves under ionizing irradiation. More importantly, X-ray diffraction analysis reveals that the highly-strained 𝛾 -phase transforms into a highly-crystalline structure without film disintegration, contrasting to that reported for isochronal annealing at 1000 K. The inelastic thermal spike calculations provide insights into the important effects of energy transfer to electrons in reordering the local atomic arrangement of both defective β- Ga 2 O 3 and 𝛾-Ga 2 O 3 . This behavior suggests a pathway for low-temperature crystallization, offering a promising strategy for fabricating ultrahigh-speed non-volatile memory devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

First-Principles Approach to Extracting Chemical Information from X-ray Absorption Near-Edge Spectra of Ga-Containing Materials

The X-ray absorption near-edge structure (XANES) can provide uniquely detailed information on the coordination environments of important Ga-containing materials with unknown structures, including catalytically active materials. In this work, the Ga K-edge XANES was simulated using first-principles-based methods for seven molecular Ga complexes as well β-Ga 2 O 3 , in order to explore the chemical origins of the experimentally observed features. The theoretical spectra were computed using FEFF, CASTEP, and StoBe, to assess the sensitivity of the results to the computational approach. While the XANES features depend on the Ga coordination environment, they are also sensitive to the electronegativity of the ligands and the symmetry at Ga. The white line position responds to changes in both the core state (due to differential screening) and the valence “p” states (arising from differences in ligand coordination).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Spectroscopic Investigation of Shallow Hole Traps in Ga- and B-doped Czochralski Silicon: Insight into Light-Induced Degradation

We report the minority carrier lifetime in B-doped Czochralski (Cz) Si declines upon carrier injection due to light-induced degradation (LID), which is attributed to the formation of a recombination-active boron-oxygen complex. Ga-doped Cz Si does not undergo LID. Previously, we showed that B-doped Cz Si undergoes a transition from paramagnetic to diamagnetic due to LID. Herein, we show that Ga-doped Cz Si remains paramagnetic upon carrier injection. This suggests that either the shallow hole traps that are formed in B-doped Cz Si are absent in Ga-doped Cz Si, or the negative-U centers in Ga-doped Cz Si do not transform into a recombination-active configuration, because the shallow acceptor trap state is shallower than the Ga acceptor level in the forbidden gap. In contrast to B-doped Cz Si, the defect signatures in Ga-doped Cz Si do not change upon light exposure, as detected by both electron paramagnetic resonance and deep-level transient spectroscopy.

14 SOLAR ENERGY↗
DOE OSTI2022

Donor doping of corundum (Al x Ga 1- x ) 2 O 3

We report corundum (Al x Ga 1-x ) 2 O 3 alloys have been proposed as a candidate ultrawide-bandgap oxide for a number of applications, but doping is unexplored. We examine the prospects for n-type doping with H, Si, Ge, Sn, Hf, Zr, and Ta in corundum (Al x Ga 1-x ) 2 O 3 alloys using first-principles calculations. All of the dopants are shallow donors in corundum Ga 2 O 3 . In the (Al x Ga 1-x ) 2 O 3 alloy, they transition from shallow to deep donors at Al compositions that are unique to each donor. Si and Hf remain shallow donors up to the highest Al contents in corundum (Al x Ga 1-x ) 2 O 3 alloys and are still shallow even as the (Al x Ga 1-x ) 2 O 3 bandgap exceeds 6.5 eV. Finally, we address the detrimental role of cation vacancies as compensating deep acceptors and suggest that doping in a hydrogen-rich environment under cation-rich conditions can be used to overcome this problem.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Enhancing the electron mobility in Si-doped (010) β-Ga 2 O 3 films with low-temperature buffer layers

We demonstrate a new substrate cleaning and buffer growth scheme in β-Ga 2 O 3 epitaxial thin films using metal–organic vapor phase epitaxy (MOVPE). For the channel structure, a low-temperature (LT, 600 °C) un-doped Ga 2 O 3 buffer was grown, followed by a transition layer to a high-temperature (HT, 810 °C) Si-doped Ga 2 O 3 channel layers without growth interruption. The (010) Ga 2 O 3 Fe-doped substrate cleaning uses solvent cleaning, followed by additional hydrofluoric acid (49% in water) treatment for 30 min before the epilayer growth. This step is shown to compensate the parasitic Si channel at the epilayer–substrate interface that originates from the substrate polishing process or contamination from the ambient. From secondary ion mass spectroscopy (SIMS) analysis, the Si peak atomic density at the substrate interface is found to be several times lower than the Fe atomic density in the substrate—indicating full compensation. The elimination of the parasitic electron channel at the epi–substrate interface was also verified by electrical (capacitance–voltage profiling) measurements. In the LT-grown (600 °C) buffer layers, it is seen that the Fe forward decay tail from the substrate is very sharp, with a decay rate of ∼9 nm/dec. X-ray off-axis rocking curve ω-scans show very narrow full width at half maximum (FWHM) values, similar to the as-received substrates. These channels show record high electron mobility in the range of 196–85 cm 2 /V⋅s in unintentionally doped and Si-doped films in the doping range of 2 × 10 16 –1 × 10 20 cm −3 . Si delta-doped channels were also grown utilizing this substrate cleaning and the hybrid LT buffers. Record high electron Hall mobility of 110 cm 2 /V⋅s was measured for sheet charge density of 9.2 × 10 12 cm −2 . This substrate cleaning, combined with the LT buffer scheme, shows the potential of designing Si-doped β-Ga 2 O 3 channels with exceptional transport properties for high-performance Ga 2 O 3 -based electron devices.

Bhattacharyya, Arkka↗
DOE OSTI2023

Mg and Al-induced phase transformation and stabilization of Ga 2 O 3 -based $\gamma$-phase spinels

Ga 2 O 3 films were deposited on (100) MgAl 2 O 4 spinel substrates at 550, 650, 750, and 850 °C using metal-organic chemical vapor deposition and investigated using x-ray diffraction and transmission electron microscopy. A phase-pure γ-Ga 2 O 3 -based material having an inverse spinel structure was formed at 850 °C; a mixture of the γ-phase and β-Ga 2 O 3 was detected in films grown at 750 °C. Only β-Ga 2 O 3 was determined in the films deposited at 650 and 550 °C. A β- to γ-phase transition occurred from the substrate/film interface during growth at 750 °C. The growth and stabilization of the γ-phase at the outset of film growth at 850 °C was affected by the substantial Mg and Al chemical interdiffusion from the MgAl 2 O 4 substrate observed in the energy-dispersive x-ray spectrum. Further, atomic-scale investigations via scanning transmission electron microscopy of the films grown at 750 and 850 °C revealed a strong tetrahedral site preference for Ga and an octahedral site preference for Mg and Al. It is postulated that the occupation of these atoms in these particular sites drives the β-Ga 2 O 3 to γ-phase transition and markedly enhances the thermal stability of the latter phase at elevated temperatures.

42 ENGINEERING↗
DOE OSTI2023

High field dielectric response in κ-Ga 2 O 3 films

κ-Ga 2 O 3 has been predicted to be a potential ferroelectric material. In this work, undoped Ga 2 O 3 films were grown by either plasma-enhanced atomic layer deposition (PEALD) or metal organic chemical vapor deposition (MOCVD) on platinized sapphire substrates. 50 nm thick PEALD films with a mixture of κ-Ga 2 O 3 and β-Ga 2 O 3 had a relative permittivity of ~27, a loss tangent below 2%, and high electrical resistivity up to ~1.5 MV/cm. 700 nm thick MOCVD films with predominantly the κ-Ga 2 O 3 phase had relative permittivities of ~18 and a loss tangent of 1% at 10 kHz. Neither film showed compelling evidence for ferroelectricity measured at fields up to 1.5 MV/cm, even after hundreds of cycles. Here, piezoresponse force microscopy measurements on bare κ-Ga 2 O 3 showed a finite piezoelectric response that could not be reoriented for electric fields up to 1.33 MV/cm.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Reliable operation of Cr 2 O 3 :Mg/ $β$-Ga 2 O 3 p–n heterojunction diodes at 600 °C

Beta gallium oxide (β-Ga 2 O 3 )-based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are, thus, promising for applications in power electronic devices and harsh environment sensors. However, the long-term reliability of these ultra-wideband gap (UWBG) semiconductor devices remains barely addressed and may be strongly influenced by chemical reactions at the p–n heterojunction interface. Here, we experimentally demonstrate operation and evaluate the reliability of Cr 2 O 3 :Mg/β-Ga 2 O 3 p–n heterojunction diodes during extended operation at 600 °C, as well as after 30 repeated cycles between 25 and 550 °C. The calculated pO 2 -temperature phase stability diagram of the Ga-Cr-O material system predicts that Ga 2 O 3 and Cr 2 O 3 should remain thermodynamically stable in contact with each other over a wide range of oxygen pressures and operating temperatures. The fabricated Cr 2 O 3 :Mg/β-Ga 2 O 3 p–n heterojunction diodes show room-temperature on/off ratios >104 at ±5 V and a breakdown voltage (V Br ) of -390 V. The leakage current increases with increasing temperature up to 600 °C, which is attributed to Poole–Frenkel emission with a trap barrier height of 0.19 eV. Over the course of a 140-h thermal soak at 600 °C, both the device turn-on voltage and on-state resistance increase from 1.08 V and 5.34 mΩ cm 2 to 1.59 V and 7.1 mΩ cm 2 , respectively. This increase is attributed to the accumulation of Mg and MgO at the Cr 2 O 3 /Ga 2 O 3 interface as observed from the time-of-flight secondary ion mass spectrometry analysis. These findings inform future design strategies of UWBG semiconductor devices for harsh environment operation and underscore the need for further reliability assessments for β-Ga 2 O 3 -based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using ( In , Ga ) N Alloy Quantum Barriers

We report on experimental and simulation-based results using ( In , Ga ) N alloy quantum barriers in c -plane green light-emitting diode (LED) structures as a means to improve vertical carrier transport and reduce forward voltage ( V F ) . Three-dimensional device simulations that include random alloy fluctuations are used to understand carrier behavior in a disordered potential. The simulated current density–voltage ( J - V ) characteristics and modified electron-hole overlap | F mod | 2 indicate that increasing the indium fraction in the ( In , Ga ) N quantum barriers leads to a reduced polarization discontinuity at the interface between the quantum barrier and quantum well, thereby reducing V F and improving | F mod | 2 . Maps of electron and hole current through the device show a relatively homogenous distribution in the X Y plane for structures using Ga N quantum barriers; in contrast, preferential pathways for vertical transport are identified in structures with ( In , Ga ) N barriers as regions of high and low current. A positive correlation between hole (electron) current in the p -side ( n -side) barrier and indium fraction reveals that preferential pathways exist in regions of high indium content. Furthermore, a negative correlation between the strain ε z z and indium fraction shows that high indium content regions have reduced strain-induced piezoelectric polarization in the Z direction due to the mechanical constraint of the surrounding lower indium content regions. Experimentally, multiple quantum well green LEDs with ( In , Ga ) N quantum barriers exhibit lower V F and blue-shifted wavelengths relative to LEDs with Ga N quantum barriers, consistent with simulation data. These results can be used to inform heterostructure design of low V F , long-wavelength LEDs and provide important insight into the nature of carrier transport in III-nitride alloy materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Effects of substitutional Ga on the phonons of δ -phase Pu based on density functional theory calculations

The delta phase of Pu is stabilized by Ga doping, but the mechanism of this stabilization remains an open question. Density functional theory calculations focused on how Ga doping affects the phonons sheds some light on the phonons' contribution to the stabilization. Here, the calculated phonon modes of Ga-doped delta phase Pu fall into two distinct types: localized, high frequency Ga-dominated phonon modes, and Pu-dominated modes at lower frequencies. Increasing the Ga concentration has an effect on the Pu-dominated phonon modes opposite to that of compression: higher-frequency modes soften, and lower-frequency modes stiffen. The latter provides an indication that the stabilization mechanism is not due to a thermodynamic contribution from the phonons. Furthermore, the stiffened phonon modes include candidate modes that describe possible pathways into low-temperature phases, suggesting that doping with Ga could impede such pathways.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗