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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

EL2 and related defects in GaAs - Challenges and pitfalls

The incorporation process of nonequilibrium vacancies in melt-grown GaAs is strongly complicated by deviations from stoichiometry, and the presence of two sublattices. Many of the microdefects originating in these vacancies and their interactions introduce energy levels (shallow and deep) within the energy gap. The direct identification of the chemical or structural signature of these defects and its direct correlation to their electronic behavior is not generally possible. It is therefore necessary to rely on indirect methods and phenomenological models and be confronted with the associated pitfalls. EL2, a microdefect introducing a deep donor level, has been in the limelight in recent years because it is believed to be responsible for the semi-insulating behavior of undoped GaAs. Although much progress has been made towards understanding its origin and nature, some relevant questions remain unanswered. An attempt is made to assess the present status of understanding of EL2 in the light of the most recent results.

Gatos, H. C.↗
NASA NTRS1986

Optical and electrical characterizations of laser-chemical-vapor-deposited aluminum oxynitride films

Composition-dependent optical and electrical properties of L-CVD (Al2O3)1-c-(AlN)c composite films are examined. The optical properties exhibit a continuous change from Al2O3 to AlN with increasing value of the composition parameter c from zero to one. There is a critical concentration value of about 0.3 below and above which Al2O3- and AlN-like optical properties are observed. The impurity absorption regions are 5.1-6.7 eV for Al2O32 and 4.6-6.0 for AlN, while the energy gap is about 6.7 eV for Al2O3 and 6.0 eV for AlN. The electrical properties of Al-insulator n-Si MIS structures display externally programmable states when bulk-controlled electron emission occurs from the traps. In the high-field region a persistent polarization field is established within the insulator. C-V characteristics of the samples are more sensitive to the concentration factor c than the I-V characteristics. A large clockwise hysteresis is observed for AlN, but a smaller counterclockwise one is observed for Al2O3.

Demiryont, H.↗
NASA NTRS1985

Neutron stars as cosmic hadron physics laboratories

Extensive observations of Her-1 with the Exosat satellite have led to a new understanding of both the dynamics of neutron-star superfluids and the free precession of neutron stars. Detailed microscopic calculations on neutron matter and the properties of the pinned crustal superfluid are provided to serve as a basis for comparing theory with observation on neutron stars. Topics discussed include the Hadron matter equation of state, neutron star structure, Hadron superfluids, the vortex creep theory, Vela pulsar glitches, astrophysical constraints on neutron matter energy gaps, the 35 day periodicity of Her-1, and the neutron matter equation of state. It is concluded that since the post-glitch fits and the identification of the 35th periodicity in Her X-1 as stellar wobble require a rigid neutron matter equation of state, the astrophysical evidence for such an equation seems strong, as well as that for an intermediate Delta(rho) curve.

Pines, D.↗
NASA NTRS1986

Theoretical temperature dependence of solar cell parameters

A simple formulation has been derived for the temperature dependence of cell parameters for any solar cell material. Detailed calculations have been performed for high-quality monocrystalline GaAs, Si and Ge cells. Preliminary experimental data for GaAs and Si cells are close to the calculated values. In general, the higher the energy gap of a material, the small is the temperature dependence of its solar cell parameters.

Fan, John C. C.↗
NASA NTRS1987

Line mixing in a N2-broadened CO2 Q branch observed with a tunable diode laser

Line-mixing effects have been observed in the infrared Q branch of the (11/1/0,03/1/0)I-00/0/0 band of CO2 at 2076/cm. A tunable diode laser spectrometer was used to record spectra of CO2 broadened by N2 and O2 at total pressures ranging from 100 to 720 torr. The observed absorption coefficients are up to 65 percent lower than those calculated using an isolated Lorentzian line approximation. A simple energy gap scaling law is used to determine the off-diagonal relaxation matrix elements from the known pressure-broadening coefficients. The spectra calculated using these matrix elements reproduces the observed absorption coefficients to within several percent.

Gentry, Bruce↗
NASA NTRS1987

Ultraviolet quantum detection efficiency of potassium bromide as an opaque photocathode applied to microchannel plates

The quantum detection efficiency (QDE) of potassium bromide as a photocathode applied directly to the surface of a microchannel plate over the 250-1600 A wavelength range has been measured. The contributions of the photocathode material in the channels and on the interchannel web to the QDE have been determined. Two broad peaks in the QDE centered at about 450 and about 1050 A are apparent, the former with about 50 percent peak QDE and the latter with about 40 percent peak QDE. The photoelectric threshold is observed at about 1600 A, and there is a narrow QDE minimum at about 750 A which correlates with 2X the band gap energy for KBr. The angular variation of the QDE from 0 to 40 deg to the channnel axis has also been examined. The stability of Kbr with time is shown to be good with no significant degradation of QDE at wavelengths below 1216 A over a 15-day period in air.

Siegmund, Oswald H. W.↗
NASA NTRS1987

IOS and ECS line coupling calculation for the CO-He system - Influence on the vibration-rotation band shapes

Line coupling coefficients resulting from rotational excitation of CO perturbed by He are computed within the infinite order sudden approximation (IOSA) and within the energy corrected sudden approximation (ECSA). The influence of this line coupling on the 1-0 CO-He vibration-rotation band shape is then computed for the case of weakly overlapping lines in the 292-78 K temperature range. The IOS and ECS results differ only at 78 K by a weak amount at high frequencies. Comparison with an additive superposition of Lorentzian lines shows strong modifications in the troughs between the lines. These calculated modifications are in excellent quantitative agreement with recent experimental data for all the temperatures considered. The applicability of previous approaches to CO-He system, based on either the strong collision model or exponential energy gap law, is also discussed.

Boissoles, J.↗
NASA NTRS1988

Spin-bag mechanism of high-temperature superconductivity

A new approach to the theory of high-temperature superconductivity is proposed, based on the two-dimensional antiferromagnetic spin correlations observed in these materials over distances large compared to the lattice spacing. The spin ordering produces an electronic pseudogap which is locally suppressed by the addition of a hole. This suppression forms a bag inside which the hole is self-consistently trapped. Two holes are attracted by sharing a common bag. The resulting pairing interaction leads to a superconducting energy gap which is nodeless over the Femri surface.

Schrieffer, J. R.↗
NASA NTRS1987

Effects of radiation damage on the silicon lattice

Silicon was irradiated with both proton and electron particle beams in order to investigate changes in the structural and optical properties of the lattice as a result of the radiation damage. Lattice expansions occurred when large strain fields (+0.34 percent) developed after 1- and 3-MeV proton bombardment. The strain was a factor of three less after 1-MeV electron irradiation. Average increases of approximately 22 meV in the 3.46-eV interband energy gap and 14 meV in the Lorentz broadening parameter were measured after the electron irradiation.

Dumas, Katherine A.↗
NASA NTRS1988

Accurate experimental and theoretical comparisons between superconductor-insulator-superconductor mixers showing weak and strong quantum effects

A systematic study of the gain and noise in superconductor-insulator-superconductor mixers employing Ta based, Nb based, and Pb-alloy based tunnel junctions was made. These junctions displayed both weak and strong quantum effects at a signal frequency of 33 GHz. The effects of energy gap sharpness and subgap current were investigated and are quantitatively related to mixer performance. Detailed comparisons are made of the mixing results with the predictions of a three-port model approximation to the Tucker theory. Mixer performance was measured with a novel test apparatus which is accurate enough to allow for the first quantitative tests of theoretical noise predictions. It is found that the three-port model of the Tucker theory underestimates the mixer noise temperature by a factor of about 2 for all of the mixers. In addition, predicted values of available mixer gain are in reasonable agreement with experiment when quantum effects are weak. However, as quantum effects become strong, the predicted available gain diverges to infinity, which is in sharp contrast to the experimental results. Predictions of coupled gain do not always show such divergences.

Mcgrath, W. R.↗
NASA NTRS1988

Extreme ultraviolet quantum efficiency of opaque alkali halide photocathodes on microchannel plates

Comprehensive measurements are presented for the quantum detection efficiency (QDE) of the microchannel plate materials CsI, KBr, KCl, and MgF2, over the 44-1800 A wavelength range. QDEs in excess of 40 percent are achieved by several materials in specific wavelength regions of the EUV. Structure is noted in the wavelength dependence of the QDE that is directly related to the valence-band/conduction-band gap energy and the onset of atomic-like resonant transitions. A simple photocathode model allows interpretation of these features, together with the QDE efficiency variation, as a function of illumination angle.

Siegmund, O. H. W.↗
NASA NTRS1989

Millimeter wave transmission studies of YBa2Cu3O7-delta thin films in the 26.5 to 40.0 GHz frequency range

Millimeter wave transmission measurements through YBa2Cu3O(7-delta) thin films on MgO, ZrO2 and LaAlO3 substrates, are reported. The films (approx. 1 micron) were deposited by sequential evaporation and laser ablation techniques. Transition temperatures T sub c, ranging from 89.7 K for the Laser Ablated film on LaAlO3 to approximately 72 K for the sequentially evaporated film on MgO, were obtained. The values of the real and imaginary parts of the complex conductivity, sigma 1 and sigma 2, are obtained from the transmission data, assuming a two fluid model. The BCS approach is used to calculate values for an effective energy gap from the obtained values of sigma sub 1. A range of gap values from 2 DELTA o/K sub B T sub c = 4.19 to 4.35 was obtained. The magnetic penetration depth is evaluated from the deduced values of sigma 2. These results are discussed together with the frequency dependence of the normalized transmission amplitude, P/P sub c, below and above T sub c.

Miranda, F. A.↗
NASA NTRS1989

Optical dispersion relations for diamondlike carbon films

Ellipsometric measurements on plasma deposited diamondlike amorphous carbon (a-C:H) films were taken in the visible, (E=1.75 to 3.5 eV). The films were deposited on Si and their properties were varied using high temperature (up to 750 C) anneals. The real (n) and imaginary (k) parts of the complex index of refraction N were obtained simultaneously. Following the theory of Forouhi and Bloomer, a least squares fit was used to find the dispersion relations n(E) and k(E). Reasonably good fits were obtained, showing that the theory can be used for a-C:H films. Moreover, the value of the energy gap (Eg) obtained in this way was compared to the Eg value using conventional Tauc plots and reasonably good agreement was obtained.

Alterovitz, Samuel A.↗
NASA NTRS1988

Advances in SIS receiver technology

Significant advances in SIS receiver technology since the last Asilomar meeting include: superconductor materials, integrated inductive tuning elements, and planar mounting structures. The effect of these advances is to push the upper frequency operating limit from about 600 to 1500 GHz, and to enhance the feasibility of focal plane arrays of heterodyne receivers. A fundamental high frequency operating limit of SIS mixers is set by the superconducting energy gap. A practical limitation for high frequency operation of SIS junctions is their parasitic capacitance and resistance. The performance of the mixer will be degraded by the Resistor-Capacitor rolloff. Several designs were reported for inductive elements integrated on the same substrate as the SIS junctions to tune out the bulk junction capacitance. Most millimeter SIS-based heterodyne receivers have used waveguide coupling structures. Technology has advanced to the state where programs that have a high probability of success can be defined to produce arrays of SIS receivers for frequencies as high as 1500 GHz.

Frerking, M. A.↗
NASA NTRS1989

Alternating gradient photodetector

A far infrared (FIR) range responsive photodetector is disclosed. There is a substrate of degenerate germanium. A plurality of alternating impurity-band and high resistivity layers of germanium are disposed on the substrate. The impurity-band layers have a doping concentration therein sufficiently high to include donor bands which can release electrons upon impingement by FIR photons of energy hv greater than an energy gap epsilon. The high resistivity layers have a doping concentration therein sufficiently low as to not include conducting donor bands and are depleted of electrons. Metal contacts are provided for applying an electrical field across the substrate and the plurality of layers. In the preferred embodiment as shown, the substrate is degenerate n-type (N++) germanium; the impurity-band layers are n+ layers of germanium doped to approximately the low 10(exp 16)/cu cm range; and, the high resistivity layers are n-layers of germanium doped to a maximum of approximately 10(exp)/cu cm. Additionally, the impurity-band layers have a thickness less than a conduction-electron diffusion length in germanium and likely to be in the range of 0.1 to 1.0 micron, the plurality of impurity-bands is of a number such that the flux of FIR photons passing therethrough will be substantially totally absorbed therein, the thickness of the high resistivity layers is such compared to the voltage applied that the voltage drop in each the high resistivity layers controls the occurence of impact ionization in the impurity-band layers to a desired level.

Overhauser, Albert W.↗
NASA NTRS1990

Investigation of ultra wideband multi-channel dichroic beamsplitters from 0.3 to 52 microns

The development of a set of multi-channel dichroics which includes a 6 channel dichroic operating over the wavelength region from 0.3 to 52 microns is described. In order to achieve the optimum performance, the optical constraints of PbTe, Ge, and CdTe coatings in the strongly absorptive region have been determined by use of a new iterative method using normal incidence reflectance measurement of the multilayer together with initial values of energy gap and infinite refractive index for the semiconductor model. The design and manufacture of the dichroics is discussed and the final results are presented.

Zhang, K. Q.↗
NASA NTRS1990

Non-Abelian geometric phase and long-range atomic forces

It is shown how gauge fields, or geometric phases, manifest as observable effects in both bound and free diatom systems. It is shown that, in addition to altering energy splittings in bound systems, geometric phases induce transitions in levels separated by a finite-energy gap. An example is given where the non-Abelian gauge field couples nondegenerate electronic levels in a diatom. This gauge-field coupling gives rise to an observable effect. It is shown that when the diatom is 'pulled apart', the non-Abelian geometric phase manifests as a long-range atomic force.

Zygelman, B.↗
NASA NTRS1990

Optical dispersion relations for diamondlike carbon films

Ellipsometric measurements on plasma deposited diamondlike amorphous carbon (a-C:H) films were taken in the visible, (E = 1.75 to 3.5 eV). The films were deposited on Si and their properties were varied using high temperature (up to 750 C) anneals. The real (n) and imaginary (k) parts of the complex index of refraction, N, were obtained simultaneously. Following the theory of Forouhi and Bloomer, a least squares fit was used to find the dispersion relations n(E) and k(E). Reasonably good fits were obtained, showing that the theory can be used for a-C:H films. Moreover, the value of the energy gap, Eg, obtained in this way was compared the the Eg value using conventional Tauc plots and reasonably good agreement was obtained.

Alterovitz, Samuel A.↗