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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Parametric studies of stream instability-induced higher harmonics in plasma ionization breakdown near an emissive dielectric surface

Here, in this work, we comprehensively investigate the generation of higher harmonic (HH) electric fields normal to the applied rf electric field in multipactor-coexisting plasma breakdown by fully kinetic particle-in-cell (PIC) simulations and a theoretical model. Firstly, a base case at driving frequency 1 GHz, transverse rf electric field amplitude 3 MV m –1 , and background gas pressure 0.2 Torr, is studied in detail. The enhanced harmonic frequency observed is around ten times the fundamental rf frequency, significantly lower than the Langmuir frequency. A theoretical model reveals that the fundamental mechanism of HHs generation is stream–plasma instability, which originates from stream-like secondary electron emission interacting with plasma. The resulting HH frequency and the growth rate of its oscillating amplitude from the theoretical model, agree well with the PIC simulations. With increasing pressure, the HH oscillations are found to be significantly reduced. This is because at higher pressure the gas ionization rate is higher, which causes a more rapidly increasing plasma density, leaving less time for the growth of instability. Furthermore, the parameter space in terms of background gas pressure and rf field amplitude within which the HHs appear is revealed. Finally, the effect of the driving rf frequency on HHs is also investigated, and it is found that the instability-induced oscillating HHs field remains when the driving frequency is increased to 2 GHz, however, it is highly reduced at higher driving frequency of 5 GHz, as oscillations at the fundamental frequency start playing a more important role.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

On the initiation and evolution of dielectric breakdown in auto-magnetizing liner experiments

Auto-magnetizing (AutoMag) liners are cylindrical tubes composed of discrete metallic helices encapsulated in insulating material; when driven with a ~2 MA, ~100-ns prepulse on the 20 MA, 100-ns rise time Z accelerator, AutoMag targets produced >150 T internal axial magnetic fields. Once the current rise rate of the pulsed power driver reaches sufficient magnitude, the induced electric fields in the liner cause dielectric breakdown of the insulator material and, with sufficient current, the cylindrical target radially implodes. The dielectric breakdown process of the insulating material in AutoMag liners has been studied in experiments on the 500–900 kA, ~100-ns rise time Mykonos accelerator. Multi-frame gated imaging enabled the first time-resolved observations of photoemission from dynamically evolving plasma distributions during the breakdown process in AutoMag targets. Using magnetohydrodynamic simulations, we calculate the induced electric field distribution and provide a detailed comparison to the experimental data. We find that breakdown in AutoMag targets does not primarily depend on the induced electric field in the gaps between conductive helices as previously thought. Finally, to better control the dielectric breakdown time, a 12–32 mJ, 170 ps ultraviolet (λ = 266 nm) laser was implemented to irradiate the outer surface of AutoMag targets to promote breakdown in a controlled manner at a lower internal axial field. Here, the laser had an observable effect on the time of breakdown and subsequent plasma evolution, indicating that pulsed UV lasers can be used to control breakdown timing in AutoMag.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Fast rise breakdown in dielectric filled air gap for surge protection

Electric discharge across an air gap can be self-healing, providing a unique capability for repetitive, fast, high-voltage/current switching applications through arc conduction. Furthermore, incorporating dielectric granules in the air gap stimulates gas ionization, which lowers the breakdown voltage and narrows breakdown voltage distribution, thereby enabling engineered surge protection from multiple lightning strikes on aerospace vehicles and sensitive solid-state electronics in critical systems. This study investigates the effect of the permittivity of dielectric granules, gap filling, surface roughness, and metal work function on fast-rising, high-voltage breakdowns. In addition to the air gap width, these factors play important roles in gas ionization, field concentration, and initiation of electrical discharge and arcing. Therefore, they could potentially be used to control and narrow operational breakdown voltages for practical applications. Additionally, a modified Langevin–Debye model is developed to correlate the breakdown voltage and the permittivity of the dielectric filler. These investigations identify and highlight key underpinning mechanisms governing the gas discharge behavior across a dielectric filled air gap during voltage surge events.

42 ENGINEERING↗
DOE OSTI2022

Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO 2 transistors

In this study, electrically detected magnetic resonance and near-zero-field magnetoresistance measurements were used to study atomic-scale traps generated during high-field gate stressing in Si/SiO 2 MOSFETs. The defects observed are almost certainly important to time-dependent dielectric breakdown. The measurements were made with spin-dependent recombination current involving defects at and near the Si/SiO 2 boundary. The interface traps observed are P b0 and P b1 centers, which are silicon dangling bond defects. The ratio of P b0 /P b1 is dependent on the gate stressing polarity. Electrically detected magnetic resonance measurements also reveal generation of E' oxide defects near the Si/SiO 2 interface. Near-zero-field magnetoresistance measurements made throughout stressing reveal that the local hyperfine environment of the interface traps changes with stressing time; these changes are almost certainly due to the redistribution of hydrogen near the interface.

42 ENGINEERING↗
DOE OSTI2021

Report on High Energy Arcing Fault Experiments: Experimental Results from Low-Voltage Switchgear Enclosures

This report documents an experimental program designed to investigate High Energy Arcing Fault (HEAF) phenomena for low-voltage metal enclosed switchgear containing aluminum conductors. This report covers full-scale laboratory experiments using representative nuclear power plant (NPP) three-phase electrical equipment. Electrical, thermal, and pressure data were recorded for each experiment and documented in this report. This report covers experiments performed on two low-voltage switchgear units with each unit consisting of two vertical sections. The data collected supports characterization of the low-voltage HEAF hazard and these results will be used to support potential improvements in fire probabilistic risk assessment (PRA) methods. The experiments were performed at KEMA Labs located in Chalfont, Pennsylvania. The experimental design, setup, and execution were completed by staff from the NRC, the National Institute of Standards and Technology (NIST), Sandia National Laboratories (SNL) and KEMA. In addition, representatives from the Electric Power Research Institute (EPRI) observed some of the experimental setup and execution. The HEAF experiments were performed between August 26 and Augsut 29, 2019 on nearidentical Westinghouse Type DS low-voltage metal-enclosed indoor switchgear. The threephase arcing fault was initiated on the aluminum main bus or in select cases on the copper bus stabs near the breaker. These experiments used either nominal 480 volts AC or 600 volts AC. Durations of the experiments ranged from approximately 0.4 s to 8.3 s with fault currents ranging from approximately 9.2 kA to 19.3 kA. Real-time electrical operating conditions, including voltage, current and frequency, were measured during the experiments. Heat fluxes and incident energies were measured with plate thermometers, radiometers, and slug calorimeters at various locations around the electrical enclosures. Environmental measurements of breakdown, conductivity and electromagnetics were also taken. The experiments were documented with normal and high-speed videography, infrared imaging and photography. The results, while limited, indicated the difficulty in maintaining and sustaining low-voltage arcs on aluminum components of sufficient duration and at a single point as observed operating experience.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2020

Reducing dielectric loss and enhancing electrical insulation for multilayer polymer films by nanoconfined ion transport under high poling electric fields

High temperature polar polymers have demonstrated potential for good thermal stability and high dielectric constant at the same time. However, polarization of contaminated impurity ions in polar polymers, even at the ppm level, can significantly increase the dielectric loss at high temperature and low frequencies. One effective strategy to mitigate this problem is to multilayer them with a high temperature nonpolar dielectric polymer to confine impurity ion transport at the nanometer scale. In this study, confined ion transport in high temperature polycarbonate (HTPC)/poly(vinylidene fluoride) (PVDF) multilayer films under high AC electric fields was studied using a direct analytical simulation method. Different from the ion transport under low fields, the ion diffusion model failed to describe the ion transport under high electric fields. An exponential ion distribution profile, which was observed for the DC poling situation, was employed to implement the direct analytical simulation. Confined impurity ion transport under high AC fields was quantitatively understood. As the AC field increased, the mobile ion concentration decreased whereas the diffusion coefficient increased. The decrease of mobile ion concentration was explained by the blockage of impurity ions by the HTPC layers. This knowledge helped in the determination of optimal conditions to polarize impurity ions from the PVDF layers into the HTPC layers. After cooling below the glass transition temperature of HTPC, polarized impurity ions were locked inside the HTPC layers. As a result, increased discharge efficiency and enhanced electrical insulation (i.e., increased dielectric breakdown strength) were achieved for the polarized multilayer films.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electricity Bill Calculator (elecprice) v0.1.0

The Electricity Bill Calculator Library is a generic tool for manipulating the tariffs of electricity, with an emphasis on commercial Time-Of-Use (TOU) rates in the U.S. and residential Net Energy Metering tariffs in CA. Typical uses of the package are price signal generation and bill computation. To generate price signals from a specific tariff and given a time window, the tool creates a pandas dataframes containing the various components of the electricity charges, at each time step. This is particularly useful for Demand Response (DR) applications, such as price-based optimization of energy in buildings. The tool also computes bills given a building's power consumption and a specific tariff and returning the corresponding cost of electricity, as well as a breakdown per type of rate.

Prakash, Anand Krishnan↗
DOE OSTI2024

Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga 2 O 3 Schottky diodes

Ga 2 O 3 unipolar devices are of high interest due to their ~8 MV/cm predicted breakdown fields, which have not yet been achieved due to premature device failure. Pre- and post-failure defect analysis of Ni–Ga 2 O 3 Schottky diodes in ultrahigh vacuum (UHV) and air were performed using depth-resolved cathodoluminescence, high angle annular dark field scanning transmission electron microscopy, and energy dispersive x-ray analysis to understand the physical mechanisms that precede premature breakdown. The breakdown voltage in UHV was dramatically reduced by nearly 40% compared with the breakdown in air. This reduction in the breakdown voltage correlated with post-breakdown differences in Ni distribution, indicating that the coordination and bonding of Ni contribute strongly to electrical behavior in Ni–Ga 2 O 3 Schottky diodes. Breakdown studies in UHV revealed that Ni diffuses away more from the metal–semiconductor interface than with air breakdown, where Ni localizes more near the interface, indicative of the preferential formation of a Ni oxide under O-poor conditions. These measurements also identified the formation of divacancy-interstitial complexes and their characteristic luminescence signature ~150 nm from the interface, the densities of which correlated with breakdown fields. These findings show that electric-field-induced degradation occurs via the rearrangement of native point defects, which act as an additional precursor to device failure. Macroscopically, they show the impact of both vacuum conditions and metal reactivity on Ga 2 O 3 device fabrication.

36 MATERIALS SCIENCE↗
DOE OSTI2022

In situ detection of RF breakdown on microfabricated surface ion traps

We report microfabricated surface ion traps are a principal component of many ion-based quantum information science platforms. The operational parameters of these devices are pushed to the edge of their physical capabilities as the experiments strive for increasing performance. When the applied radio-frequency (RF) voltage is increased excessively, the devices can experience damaging electric discharge events known as RF breakdown. We introduce two novel techniques for in situ detection of RF breakdown, which we implemented while characterizing the breakdown threshold of surface ion traps produced at Sandia National Laboratories. In these traps, breakdown did not always occur immediately after increasing the RF voltage, but often minutes or even hours later. This result is surprising in the context of the suggested mechanisms for RF breakdown in vacuum. Additionally, the extent of visible damage caused by breakdown events increased with the applied voltage. To minimize the probability for damage when RF power is first applied to a device, our results strongly suggest that the voltage should be ramped up over the course of several hours and monitored for breakdown.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Computational prediction of dielectric breakdown strength of a transformer paper in oil with uncertainty quantification

The determination of the dielectric breakdown strengths of microstructurally heterogeneous materials has been a primarily experimental endeavor. We report the development of a microstructure-level model for computationally predicting the breakdown strength and analyzing the interactions between electromagnetic pulses (EMP) and the constituents in a composite of cellulose-based paper and mineral oil found in electrical transformers. The model allows explicit simulation of the material breakdown process by tracking the transition of dielectric constituents from non-conductive to conductive states. The focus is on the electric fields induced in the materials and the overall conditions for dielectric breakdown (defined as the onset of avalanche) caused by the electric field induced in the composite. Responses to three distinct pulse shapes, i.e., Steep Front (SF), Lightning (L), and AC with spectra spanning 60–9 × 105 Hz are considered. It is found that the breakdown strength of the material is significantly affected by microstructure heterogeneities, the spatial variations of the constituent properties, and the pulse shapes. A probabilistic characterization of the breakdown strength is computationally obtained and compared with experimental measurements. Although one particular material is analyzed, the model and approach are applicable to other heterogeneous materials as well.

breakdowns↗
DOE OSTI2025

Electrical and structural characterization of in situ MOCVD Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs

This study investigates the electrical and structural properties of metal–oxide–semiconductor capacitors (MOSCAPs) with in situ metal-organic chemical vapor deposition-grown Al2O3 dielectrics deposited at varying temperatures on (010) β-Ga2O3 and β-(AlxGa1−x)2O3 films with different Al compositions. The Al2O3/β-Ga2O3 MOSCAPs exhibited a strong dependence of electrical properties on Al2O3 deposition temperature. At 900 °C, reduced voltage hysteresis (∼0.3 V) with improved reverse breakdown voltage (74.5 V) was observed, corresponding to breakdown fields of 5.01 MV/cm in Al2O3 and 4.11 MV/cm in β-Ga2O3 under reverse bias. In contrast, 650 °C deposition temperature resulted in higher voltage hysteresis (∼3.44 V) and lower reverse breakdown voltage (38.8 V) with breakdown fields of 3.69 and 2.87 MV/cm in Al2O3 and β-Ga2O3, respectively, but exhibited impressive forward breakdown field, increasing from 5.62 MV/cm at 900 °C to 7.25 MV/cm at 650 °C. High-resolution scanning transmission electron microscopy (STEM) revealed improved crystallinity and sharper interfaces at 900 °C, contributing to enhanced reverse breakdown performance. For Al2O3/β-(AlxGa1−x)2O3 MOSCAPs, increasing Al composition (x) from 5.5% to 9.2% reduced net carrier concentration and improved reverse breakdown field contributions from 2.55 to 2.90 MV/cm in β-(AlxGa1−x)2O3 and 2.41 to 3.13 MV/cm in Al2O3. The electric field in Al2O3 dielectric under forward bias breakdown also improved from 5.0 to 5.4 MV/cm as Al composition increased from 5.5% to 9.2%. The STEM imaging confirmed the compositional homogeneity and excellent stoichiometry of both Al2O3 and β-(AlxGa1−x)2O3 layers. These findings demonstrate the robust electrical performance, high breakdown fields, and excellent structural quality of Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs, highlighting their potential for high-power electronic applications.

Bhuiyan, A. F. M. Anhar Uddin (ORCID:0000000334212↗
DOE OSTI2022

Microgap breakdown with floating metal rod perturbations

Here, we report the characterization of microgap breakdown with perturbations from a metal rod floating between anode and cathode electrodes. The effects of the metal rod on the electric field distribution and the field enhancement factor are evaluated by numerical simulation and the conformal mapping method, and they indicate that the field emission regime is not reached. The breakdown voltages in the Townsend discharge regime are determined based on the voltage–current characteristics, which are obtained from two-dimensional fluid simulations. It is found that the breakdown characteristics can be significantly modulated by the floating metal rod, and the breakdown curve (breakdown voltage vs the net gap distance) is no longer U-shaped, which deviates from the conventional Paschen's law. The underlying physical mechanisms are related to the electric field enhancement, curved breakdown path, and nonuniform ion flux caused by the electric shielding effect. The results provide insights into breakdown characteristics in microscale discharges, which may promote conventional investigation of simplified clean gaps toward more complex conditions (e.g., with floating microparticles) in miniaturized plasma devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Study on Electrostatic Separation of Quinoline Insolubles from Coal Tar Pitch

The feasibility of electrical separation in the removal of quinoline insoluble (QI) particles from coal tar pitch (CTP) was experimentally investigated. QI particle involvement prohibits the effective fabrication of high-quality value-added products, such as carbon fibers, from CTP. A substantial and sustainable CTP market exists around the world; therefore, a strong incentive exists to develop a viable technical approach to effectively and economically remove QI particles from CTP. The electrical separation method shows promise to achieve this technical goal (Cao et al., 2012). Even with the given setup (wire- cylinder adapted), critical issues remain to be addressed for this method to be applicable to the CTP: (1) identifying the wash oil used in the original QI separation, (2) understanding the mechanism of QI separation, (3) characterizing the deposit, and (4) identifying the QI. This study integrated a set of experimental and analysis techniques into the electrical separation tests to address the aforementioned issues. Key findings are as follows: 1. Electric current responses: • The electric current level of the CTP–wash oil solution reported by Cao et al. (2012) can be attained by using a mixture of 25% quinoline and 75% toluene for the CTPs examined in this study under the same electrical load condition. • The electric current tends to decrease during the test period because of the decreasing number of charged particles. • The reversed field corresponded to the configuration of electrostatic precipitation for positive corona discharge. The high electric field can result in dielectric breakdown and lead to an abrupt current surge. 2 Deposit response and solvent candidates: • Deposit of particles in CTP mixture can be effectively implemented in a wire-cylinder configuration as proposed and examined in this study. • Deposit depends on the solvents. Among the solvents tested, two- and three-part solvents that included quinoline and ethanol (i.e., 25% quinoline and 75% toluene; 50% quinoline and 50% toluene; and 33% wash oil, 33% BTX, and 34% ethanol) produced the highest deposit weight. • The deposit process examined in this study is derived from the charged particles. An appreciable relation exists between deposit weight and electric charge. 3. QI removal efficiency (RE): • The RE of the electrostatic separation can reach as high as 76.2% for Carbores, and 61.6% for Koppers. • The RE can be further enhanced if the field level increases from 0.16 kV/mm that was used in the current study to 0.23 kV/mm, according to the relation established between the RE and the electric field. 4. Testing of the modeling system: • The motion of particles is originally driven by the charge-based electric force in the cases tested. The solid particle separation mechanism is similar to that of QI deposition in CTP. • The mechanical movement of solid particles can be strongly affected by the gravitational and viscous forces in the electric field. 5. EDS analysis and chemical compositions: • The main chemical composition of deposit QI matches that of as-prepared CTP QI. The deposit QI is derived from the same group of the CTP QI. • In addition to carbon, the QI contains oxygen, sodium, aluminum, silicon, iron, and sulfur. The work for the near future is also discussed.

01 COAL, LIGNITE, AND PEAT↗
DOE OSTI2023

7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management

Devices based on gallium nitride (GaN) have great potential for high power switching applications due to the high breakdown field and high electron mobility. In this work, we present a vertical GaN-on-GaN PN power diode using high dielectric constant material, BaTiO3, for electrical field management and high breakdown voltages, in together with an optimized guard-ring and field plate design. Numerical simulation shows that with high-k dielectrics implemented, the peak electrical field at the PN interface is mitigated from 3.5 to 3.1 MV/cm under a reverse bias of −9.05 kV. The device design with BaTiO3 shows a breakdown voltage of 9.65 kV or about 600 V improvement. The fabricated diodes with a 57 μm thick drift layer demonstrate a breakdown voltage of 7.86 kV on a bulk GaN substrate. The device has an on-resistance of 2.8 mΩ cm2 and a Baliga figure of merit of 22 GW/cm2.

Physics↗
DOE OSTI2021

Bulk dissipation in the quantum anomalous Hall effect

Even at the lowest accessible temperatures, measurements of the quantum anomalous Hall (QAH) effect have indicated the presence of parasitic dissipative conduction channels. There is no consensus whether parasitic conduction is related to processes in the bulk or along the edges. Here, we approach this problem by comparing transport measurements of Hall bar and Corbino geometry devices fabricated from Cr-doped (BiSb) 2 Te 3 . We identify bulk conduction as the dominant source of dissipation at all values of temperature and in-plane electric field. Furthermore, we observe identical breakdown phenomenology in both geometries, indicating that breakdown of the QAH phase is a bulk process. The methodology developed in this study could be used to identify dissipative conduction mechanisms in new QAH materials, ultimately guiding material development towards realization of the QAH effect at higher temperatures

36 MATERIALS SCIENCE↗
DOE OSTI2023

An efficient solution of low-frequency magnetic problems with voltage sources using all-frequency stable formulation

The modeling and simulation of magnetic problems at low frequencies are considered in this paper. When excited with a voltage source, conduction current is induced in the circuit of interest, which generates the magnetic field. This type of problems is modeled using the all-frequency stable formulation, which employs the potential description of fields with an inhomogeneous Coulomb gauge. With the aid of the stable formulation, the low-frequency breakdown problem is circumvented and both electric and magnetic fields can be solved in a single simulation. To solve large magnetic problems efficiently, it is necessary to employ an iterative solver with an efficient preconditioner. In this work, a preconditioner based on the incomplete LU decomposition is constructed and applied in a wide frequency range. Several numerical examples are given to demonstrate the performance of the proposed method.

Mekonnen, Minyechil↗
DOE OSTI2021

Hybrid BaTiO 3 /SiN x /AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance

In this Letter, we demonstrate hybrid GaN lateral Schottky barrier diodes with enhanced breakdown characteristics and a low turn-on voltage. These diodes incorporate a lateral Schottky barrier in combination with a high permittivity material beneath the field plate, enabling high average breakdown fields and a low turn-on voltage. Average electric fields up to 2.38 MV/cm were achieved for devices with an anode–cathode spacing of 4 μm, while maintaining with a turn-on voltage of 0.48 V. In contrast, SiN x /AlGaN/GaN control lateral Schottky diodes displayed an average breakdown field of ~0.7 MV/cm for devices with similar dimensions with a turn-on voltage of 0.46 V. The use of a high-permittivity dielectric can more effectively utilize the high breakdown fields in wide bandgap materials by proper management of the electric field. This demonstration provides an innovative way to integrate high-permittivity materials with GaN lateral devices for improved breakdown and resistance characteristics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Estimating the Electric Fields Driving Lightning Dart Leader Development With BIMAP‐3D Observations

Abstract In this paper, a numerical dart leader model has been implemented to understand the leader's development and the corresponding electric field changes observed by the 3D broadband mapping and polarization (BIMAP‐3D) system. The model assumes the extending leader channel is equipotential and has a linear charge distribution induced by an ambient electric field. The charge distribution induced by the ambient field can be used to model the electric field change at the ground. We then find the ambient electric field which best fits the field change measurements at the two BIMAP stations. The estimated ambient electric field decreases in the direction of dart leader propagation. Our observations and modeling results are consistent with our earlier hypothesis that dart leader speed is proportional to the electric field at the leader tip. The model also supports our earlier analysis that leader speed variations near branch junctions were due to previous charge deposits near the junctions. The modeled tip electric field is generally lower than the breakdown field unless the pre‐dart‐leader channel has a significant temperature of 3,000 K. This is consistent with the fact that dart leaders typically do not form new branches into the virgin air. Furthermore, the tip field is generally close to the negative streamer stability field at ambient temperatures, explaining the nature of the narrow and well‐defined channel structure. In addition to the charge distribution and the ambient and tip electric field, the development of the channel potential and current distribution are also presented.

3D lightning mapping↗