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Results for “Dislocation mobility”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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101 records · Page 6

All sources NASA NTRS DOE OSTI

DOE OSTI2021

Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates

A high-conductivity two-dimensional (2D) hole gas is the enabler of wide-bandgap p-channel transistors. Compared to commonly used AlN template substrates with high dislocation densities, the recently available single-crystal AlN substrates are promising to boost the speed and power handling capability of p-channel transistors based on GaN/AlN 2D hole gases (2DHGs) thanks to the much lower dislocation densities and the absence of thermal boundary resistance. Using plasma-assisted molecular beam epitaxy, we report the observation of polarization-induced high-density 2DHGs in undoped pseudomorphic GaN/AlN heterostructures on the single-crystal AlN substrates with high structural quality and atomic steps on the surface. The high-density 2DHG persists down to cryogenic temperatures with a record high mobility exceeding 280 cm 2 /V s and a density of 2.2 × 10 13 /cm 2 at 10 K. These results shed light on aspects of improving 2D hole mobilities and indicate significant potential of GaN/AlN 2DHG grown on bulk AlN substrates for future high performance wide-bandgap p-channel transistors.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Thermal diffusivity recovery and defect annealing kinetics of self-ion implanted tungsten probed by insitu transient grating spectroscopy

Tungsten is a promising candidate material for plasma-facing armour components in future fusion reactors. A key concern is irradiation-induced degradation of its normally excellent thermal transport properties. In this comprehensive study, thermal diffusivity degradation in ion-implanted tungsten and its evolution from room temperature (RT) to 1073 K is considered. Five samples were exposed to 20 MeV self-ions at RT to achieve damage levels ranging from 3.2 x 10 -4 to 3.2 displacements per atom (dpa). Transient grating spectroscopy with in-situ heating was then used to study thermal diffusivity evolution as a function of temperature. Using a kinetic theory model, an equivalent point defect density is estimated from the measured thermal diffusivity. The results showed a prominent recovery of thermal diffusivity between 450 K and 650 K, which coincides with the onset of mono-vacancy mobility. After 1073 K annealing samples with initial damage of 3.2 x 10 -3 dpa or less recover close to the pristine value of thermal diffusivity. For doses of 3.2 x 10 -2 dpa or higher, on the other hand, a residual reduction in thermal diffusivity remains even after 1073 K annealing. Transmission electron microscopy reveals that this is associated with extended, irradiation-induced dislocation structures that are retained after annealing. A sensitivity analysis shows that thermal diffusivity provides an efficient tool for the assessing total defect content in tungsten up to 1000 K.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Precipitation Hardening in Ferroelectric Ceramics

Domain wall motion in ferroics, similar to dislocation motion in metals, can be tuned by well-concepted microstructural elements. In demanding high-power applications of piezoelectric materials, the domain wall motion is considered as a lossy hysteretic mechanism that should be restricted. Current applications for so-called hard piezoelectrics are abundant and hinge on the use of an acceptor-doping scheme. However, this mechanism features severe limitations due to enhanced mobility of oxygen vacancies at moderate temperatures. By analogy with metal technology, the authors present here a new solution for electroceramics, where precipitates are utilized to pin domain walls and improve piezoelectric properties. Through a sequence of sintering, nucleation, and precipitate growth, intragranular precipitates leading to a fine domain structure are developed as shown by transmission electron microscopy, piezoresponse force microscopy, and phase-field simulation. This structure impedes the domain wall motion as elucidated by electromechanical characterization. As a result, the mechanical quality factor is increased by ≈50% and the hysteresis in electrostrain is suppressed considerably. This is even achieved with slightly increased piezoelectric coefficient and electromechanical coupling factor. This novel process can be smoothly implemented in industrial production processes and is accessible to simple laboratory experimentation for microstructure optimization and implementation in various ferroelectric systems.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO 2

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials' limitations with regard to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep-UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved doping and transport properties. As an example, we discuss the case of rutile GeO2 (r-GeO 2 ), a water-insoluble GeO 2 polytype, which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than β-Ga 2 O 3 . The subsequent realization of single-crystalline r-GeO 2 thin films by molecular beam epitaxy provides the opportunity to realize r-GeO 2 for electronic applications. Future efforts toward the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled doping in high-quality thin films with lower dislocation densities and optimized film properties.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Degradation of electrical resistivity of tungsten following shielded neutron irradiation

A major challenge for heat transfer in nuclear materials is to ensure thermal mobility after high amounts of neutron irradiation. Tungsten is widely selected as a heat transfer material in fusion reactors. In metals, thermal conductivity is dominated by electrons’ ability to transfer energy. Neutron irradiation generates point defects, clusters, and solid transmutation (e.g.rhenium and osmium in tungsten), which inhibit electron motion. The purpose of this work is to quantify the irradiation-induced change in electron mobility and deconvolute transmutation and microstructural effects on observed changes to electron mobility. Single and polycrystalline tungsten were fast neutron irradiated in the High Flux Isotope Reactor at Oak Ridge National Laboratory to doses between 0.2 and 0.7 displacements per atom (dpa) and temperatures from 500 °C to 1000 °C. Grain growth was observed in all samples. Microstructure and transmutation were quantified. The geometric orientation of samples with elongated grains has been shown to affect electrical resistivity. A mathematical model was developed and used to deconvolute solid-solution transmutation, grain, and temperature-dependent lattice effects on resistivity. At ~0.4 dpa at ~590 °C, the combined resistivity degradation due to voids, vacancies, interstitials, and dislocations is estimated to be greater than the contribution from solid solution Re transmutation, which is greater than the contribution from grain boundaries. At doses of ~0.7 dpa at ~750 °C, solid solution Re contributions are greater than all other effects combined. As a result, this work establishes a basis to predict the effects of irradiation temperature and transmutation on thermal properties of tungsten and highlights the importance of irradiation temperature.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Approach and rotation of reconnecting topological defect lines in liquid crystal

Topological defects are a universal concept across many disciplines, such as crystallography, liquid-crystalline physics, low-temperature physics, cosmology, and even biology. In nematic liquid crystals, topological defects called disclinations have been widely studied. For their three-dimensional (3D) dynamics, however, only recently have theoretical approaches dealing with fully 3D configurations been reported. Further, recent experiments have observed 3D disclination line reconnections, a phenomenon characteristic of defect line dynamics, but detailed discussions were limited to the case of approximately parallel defects. In this paper, we focus on the case of two disclination lines that approach at finite angles and lie in separate planes, a more fundamentally 3D reconnection configuration. Observing and analyzing such reconnection events, we find the square-root law of the distance between disclinations and the decrease of the interdisclination angle over time. We compare the experimental results with theory and find qualitative agreement on the scaling of distance and angle with time, but quantitative disagreement on distance and angle relative mobilities. To probe this disagreement, we derive the equations of motion for systems with reduced twist constant and also carry out simulations for this case. These, together with the experimental results, suggest that deformations of disclinations may be responsible for the disagreement. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗

DOE OSTI2021

Irradiation-enhanced diffusion and diffusion-limited creep in U 3 Si 2

U 3 Si 2 is an advanced fuel candidate due to its relatively high fissile density and attractive thermal properties. Compared to standard UO 2 fuel, there are significant data gaps for the thermophysical and thermomechanical properties of U 3 Si 2 . Point defect concentrations and mobilities under irradiation govern a number of important fuel performance properties, such as creep and fission gas release. In this work, we utilized density functional theory (DFT) data to inform a cluster dynamics framework to predict point defect concentrations in U 3 Si 2 under irradiation. Molecular dynamics (MD) simulations were used to examine the contribution of atomic mixing during ballistic cascades to diffusion, as well as the diffusivity of U and Si at grain boundaries. These atomic scale models for diffusivity were then used to inform a creep model based on bulk (Nabarro-Herring) and grain boundary (Coble) diffusional creep, and climb-limited dislocation creep. The model compares well against available experimental data and has been implemented in the BISON fuel performance code. Finally, a demonstration case using simple power profiles has been carried out, showing that negligible creep occurs due to the low temperatures experienced by U 3 Si 2 in-reactor, a consequence of its high thermal conductivity.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2025

Back to functional hydrides: Effects of neutron-irradiated microstructure on hydrogen retention in yttrium hydride

Functional hydrides are promising candidates for advanced nuclear reactors, particularly in portable or transportable applications, due to their high hydrogen-retention capabilities, enabling efficient neutron moderation, and compact reactor design. However, hydrogen mobility in hydrides at elevated irradiation temperatures poses significant technological challenges, necessitating a comprehensive understanding of their irradiation behavior. Furthermore, this study investigated the microstructural and chemical stability of neutron-irradiated yttrium hydrides to assess their hydrogen-retention capacity. A targeted literature review was also conducted to contextualize neutron-irradiation effects on functional hydrides with regards to structural stability and hydrogen retention. Experimental characterizations revealed that, at high temperatures, irradiated hydrides retained their phase stability, which was likely enhanced by irradiation-induced microstructure evolution. Notably, an amorphous yttrium and oxygen -rich surface layer was present at the free surface of the hydride. Its thickness decreased while a continuous crystalline Y-O-rich layer was formed with increasing neutron damage. Additionally, the number density of dislocation loops and cavities generally increased as a function of neutron dose. First-principles calculations of hydrogen behavior within yttrium vacancy clusters in yttrium hydrides demonstrated vacancy-size-dependent hydrogen stability and configuration, highlighting the role of vacancy geometry in regulating hydrogen retention. Thus, the presence of irradiation-induced dislocation loops and cavities were hypothesized to improve hydrogen retention. Collectively, these findings advance the understanding of hydride behavior under neutron irradiation as well as their technological readiness for portable or transportable nuclear reactors.

Defect clusters↗

DOE OSTI2024

Structural anisotropy in Sb thin films

Sb thin films have attracted wide interest due to their tunable band structure, topological phases, high electron mobility, and thermoelectric properties. We successfully grow epitaxial Sb thin films on a closely lattice-matched GaSb(001) surface by molecular beam epitaxy. We find a novel anisotropic directional dependence on their structural, morphological, and electronic properties. The origin of the anisotropic features is elucidated using first-principles density functional theory (DFT) calculations. The growth regime of crystalline and amorphous Sb thin films was determined by mapping the surface reconstruction phase diagram of the GaSb(001) surface under Sb 2 flux, with confirmation of structural characterizations. Crystalline Sb thin films show a rhombohedral crystal structure along the rhombohedral (211) surface orientation parallel to the cubic (001) surface orientation of the GaSb substrate. At this coherent interface, Sb atoms are aligned with the GaSb lattice along the [1̄10] crystallographic direction but are not aligned well along the [110] crystallographic direction, which results in anisotropic features in reflection of high-energy electron diffraction patterns, misfit dislocation formation, surface morphology, and transport properties. Our DFT calculations show that the preferential orientation of the rhombohedral Sb (211) plane may originate from the GaSb surface, where Sb atoms align with the Ga and Sb atoms on the reconstructed surface. The formation energy calculations confirm the stability of the experimentally observed structures. Our results provide optimal film growth conditions for further studies of novel properties of Bi 1-x Sb x thin films with similar lattice parameters and an identical crystal structure, as well as functional heterostructures of them with III–V semiconductor layers along the (001) surface orientation, supported by a theoretical understanding of the anisotropic film orientation.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Small uranium and oxygen interstitial clusters in UO 2 : An empirical potential study

The aggregation of defect clusters in UO 2 under irradiations creates dislocation loops and cavities, which in turn contribute to swelling of the fuels, leading to detrimental pellet-clad mechanical interactions. The kinetics of the defect clusters, however, have received less attention and are not well understood. As such, using two interatomic potentials, the Morelon potential and a many-body model by Cooper, Rushton, and Grimes (CRG), the energetics and kinetics of small uranium interstitial clusters, with and without bound oxygen interstitials, are investigated with molecular dynamics and accelerated molecular dynamics simulations. For the single bound anti-Schottky interstitial cluster (U i 2O i ), both potentials find the interstitialcy migration mechanism to be a low barrier migration mechanism. However, for the CRG potential, an oxygen Frenkel pair assisted interstitial cluster migration mechanism with a lower migration barrier is identified during accelerated molecular dynamics simulations. For the Morelon potential, the interstitial clusters have geometrically compact structures, and small interstitial clusters (two and three anti-Schottky clusters) are more mobile than the single bound anti-Schottky interstitial cluster; for the CRG potential, the interstitial clusters have geometrically non-compact structures, yielding a more complex energy landscape. The rapid migration of interstitials and interstitial clusters are important for the irradiation response of UO 2 and correlates well with the very low barriers reported in a few historic experimental studies.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

DOE OSTI2024

Direct observation of annealing-driven recrystallization behavior in magnesium alloy at low strain condition

Grain-twin interactions are significant in texture modification under thermodynamic driving force. In this study, annealing-driven twinning/detwinning behavior, grain growth, and corresponding texture evolution in a pre-deformed AZ31 magnesium alloy were systematically tracked and investigated via in-situ heating synchrotron X-ray diffraction and quasi in-situ electron backscattered diffraction techniques. A twinning texture is generated in the pre-deformed sample due to the activation of {$10\bar{1}2$} tensile twinning. During annealing, dislocation annihilation occurs between 100 and 280 °C, and recrystallization occurs above 280 °C, manifesting as the initial residual matrix and twins being competitively swallowed by each other, forming a bimodal texture. The recrystallization process is completed by boundary movement, which depends on the energy difference across the boundary. In addition, it is found that the grain boundaries favor movement towards the side with higher stored energy, regardless of the boundary type or the boundary energy.

In-situ observation↗