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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Inversion of dislocation-impurity interactions in α -Fe under magnetic state changes

Here, in this work, we investigate the dislocation-impurity interaction energies and their profiles for various 3d elements —V, Cr, Mn, Cu, Ni, and Co —in and around 1/2 $\langle111\rangle$ screw dislocations in α -Fe using ab initio methods. We consider the ferromagnetic and paramagnetic states, with the latter being modeled through both the disordered local moment model and a spin-wave approach. Our findings reveal that (1) magnetic effects are large compared to size misfit effects of substitutional impurities, and (2) dislocation-impurity interactions are dependent on the magnetic state of the matrix and thermal lattice expansion. In particular, Cu changes from core-attractive in the ferromagnetic state to repulsive in the paramagnetic state.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Effect of helium bubbles on the mobility of edge dislocations in copper

Abstract Helium bubbles can form in materials upon exposure to irradiation. It is well known that the presence of helium bubbles can cause changes in the mechanical behavior of materials. To improve the lifetime of nuclear components, it is important to understand deformation mechanisms in helium-containing materials. In this work, we investigate the interactions between edge dislocations and helium bubbles in copper using molecular dynamics (MD) simulations. We focus on the effect of helium bubble pressure (equivalently, the helium-to-vacancy ratio) on the obstacle strength of helium bubbles and their interaction with dislocations. Our simulations predict significant differences in the interaction mechanisms as a function of helium bubble pressure. Specifically, bubbles with high internal pressure are found to exhibit weaker obstacle strength as compared to low-pressure bubbles of the same size due to the formation of super-jogs in the dislocation. Activation energies and rate constants extracted from the MD data confirm this transition in mechanism and enable upscaling of these phenomena to higher length-scale models.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Temperature and dose rate effects on dislocation loop formation and decoration in self-ion irradiated high-purity Fe-Cr model alloys

Body-centered cubic (BCC) Fe-based alloys are promising candidate materials for advanced nuclear reactors. A widespread perception is that the addition of Cr favors the formation of ½ <111> dislocation loops. However, the Cr effects on dislocation loop formation/evolution remain unclear due to the limited experimental studies. In this study, we irradiate ultra-high purity bulk BCC Fe-xCr (x = 3, 5, and 8 wt%) with 6.7-8 MeV Fe ions over a wide range of temperatures (Tirr = 250-500 °C) and dose rates (10⁻⁵ to 10⁻³ dpa/s) to two midrange doses (0.35 and 3.5 dpa). The major irradiation-induced microstructures are loop decoration along non-screw dislocation lines at low temperatures and high dose rates as well as self-assembled loops at elevated temperatures. Post-irradiation Burgers vector analysis via g•b method on loops and electron tomography reveals that <001> preponderance is observable in all irradiated Fe-Cr samples at elevated temperature, resulting from stronger elastic energy originating from <001> edge.

Li, Yao [University of Tennessee (UT)]↗
DOE OSTI2025

Rationalization of the tensile creep behavior of the Nb45Ta25Ti15Hf15 bcc refractory complex concentrated alloy using Rao-Suzuki screw dislocation glide model

Published experimental tensile creep data for refractory body-centered cubic alloy Nb45Ta25Ti15Hf15 (NTTH) at temperatures ranging from 850–950 °C and applied tensile stresses 50–300 MPa are analyzed using the Rao-Suzuki screw dislocation glide model of solid solution strengthening. It is shown that the experimental creep data as well as transmission electron microscopy observations of post- creep deformation dislocation microstructure are in agreement with the model results. This suggests that the creep deformation of NTTH at 850–950 °C is controlled by screw dislocation glide.

Rao, Satish I↗
DOE OSTI2024

Data-driven modeling of dislocation mobility from atomistics using physics-informed machine learning

Dislocation mobility, which dictates the response of dislocations to an applied stress, is a fundamental property of crystalline materials that governs the evolution of plastic deformation. Traditional approaches for deriving mobility laws rely on phenomenological models of the underlying physics, whose free parameters are in turn fitted to a small number of intuition-driven atomic scale simulations under varying conditions of temperature and stress. This tedious and time-consuming approach becomes particularly cumbersome for materials with complex dependencies on stress, temperature, and local environment, such as body-centered cubic crystals (BCC) metals and alloys. In this paper, we present a novel, uncertainty quantification-driven active learning paradigm for learning dislocation mobility laws from automated high-throughput large-scale molecular dynamics simulations, using Graph Neural Networks (GNN) with a physics-informed architecture. We demonstrate that this Physics-informed Graph Neural Network (PI-GNN) framework captures the underlying physics more accurately compared to existing phenomenological mobility laws in BCC metals.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Influence of misfit dislocations on ionic conductivity at oxide interfaces

Mismatched complex oxide thin films and heterostructures have gained significant traction for use as electrolytes in intermediate temperature solid oxide fuel cells, wherein interfaces exhibit variation in ionic conductivity as compared to the bulk. Although misfit dislocations present at interfaces in these structures impact ionic conductivity, the fundamental mechanisms responsible for this effect are not well understood. To this end, a kinetic lattice Monte Carlo (KLMC) model was developed to trace oxygen vacancy diffusion at misfit dislocations in SrTiO 3 /BaZrO 3 heterostructures and elucidate the atomistic mechanisms governing ionic diffusion at oxide interfaces. The KLMC model utilized oxygen vacancy migration energy barriers computed using molecular statics. While some interfaces promote oxygen vacancy diffusion, others impede their transport. Fundamental factors such as interface layer chemistry, misfit dislocation structure, and starting and ending sites of migrating ions play a crucial role in oxygen diffusivity. Molecular dynamics (MD) simulations were further performed to support qualitative trends for oxygen vacancy diffusion. Overall, the agreement between KLMC and MD is quite good, though MD tends to predict slightly higher conductivities, perhaps a reflection of nuanced structural relaxations that are not captured by KLMC. The current framework comprising KLMC modeling integrated with molecular statics offers a powerful tool to perform mechanistic studies focused on ionic transport in thin film oxide electrolytes and facilitate their rational design.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Decay of skeins of dislocations in cholesterics: rewiring Conway's tangles into necklaces of bangles

Knotted and linked skeins of vortices and disclinations generated, respectively, by symmetry-breaking normal → superfluid and isotropic → nematic phase transitions are known to untie, by rewiring of their crossings, into independent unknots that finally shrink and collapse until the defect-free ground state is reached. We demonstrate that the decay of skeins of dislocations, generated by the isotropic → cholesteric phase transition within a cylinder/cylinder gap, leads to stable necklace-like states made of numerous minimal loops, called bangles, tethered to kinks of much larger loops called cargo. We analyze the topological decay of skeins of dislocations in terms of the Conway–Kauffman theory of knots, showing that the necklace state results from rewiring of crossings triggered by collisions of tangles with their numerator closure. We point out that, in general, for symmetry reasons, kinks on edge dislocations are chiral. Their handedness, right or left, directly depends on the sign of kinks on which they are localized. In cholesterics with intrinsic chirality, the energy of kinks bearing bangles depends on their handedness. For this reason, within necklaces, all bangles are tethered to kinks of the same sign.

Lee, Jun-Yong [International Institute for Sustain↗
DOE OSTI2024

Resolving crystallographic geometrically necessary dislocations in three dimensions in a hexagonal close packed titanium alloy

Abstract Geometrically necessary dislocation (GND) content is measured from mm 3 -scaled Ti7Al three-dimensional (3D) microstructural data using a theory extended for hexagonal close packed crystals, which accounts for basal, prismatic and pyramidal ⟨ c + a ⟩ type dislocation content. The Ti7Al samples have been mechanically pre-strained to two different strain levels, and will then be strained along the same axis in uniaxial tension during simulation. Both inter- and intragranular GNDs across the microstructures have been characterized, with a large contribution of pyramidal ⟨ c + a ⟩ GNDs, consistent with the relative slip activity involved in pre-straining. The spatially resolved crystallographic GND distributions within the 3D microstructures are used to instantiate a microstructure model for forward modeling deformation simulations by a dislocation density hardening elasto-viscoplastic fast Fourier transform framework. Coarsening the voxel resolution during the initial microstructure construction procedure is shown to strongly impact both the magnitude and spatial distribution of the GNDs and in turn the forward deformation response of the pre-strained material. This study indicates that the voxel resolution desired when transferring from measured to model microstructures need not only be proportionally scaled with the microstructure but also sufficiently fine to capture the subgranular orientation gradients that may already be present in the material.

Materials Science↗
DOE OSTI2025

Cross slip of extended dislocations in face-centered cubic metals through phase-field modeling

Cross slip is a dislocation mechanism that significantly impacts the mechanical behavior of engineering alloys. Here, in this work, we advance a 3D phase-field dislocation dynamics (PFDD) mesoscale technique to simulate cross slip across a broad range of face-centered cubic (FCC) metals. The formulation incorporates elastic anisotropy, an FCC numerical grid, and a high-fidelity representation of the entire γ -surface from density functional theory for eight FCC metals and no adjustable parameters or rules. The relaxed core structures under zero stress for all metals are predicted to extend in plane. The analytical model for stacking fault width agrees well with the PFDD result under the assumption of elastic isotropy but overestimates it under elastic anisotropy, when the degree of anisotropy is large. The dynamic simulations are designed to elucidate the material parameters that influence the propensity for cross slip. Whether cross slip occurs under a non-Schmid stress or to bypass a hard obstacle, the critical stress to cross slip scales strongly with the anisotropic energy coefficient for a screw dislocation.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Post Irradiation Examination Dislocation Defect Detection Software

This software provides dislocation-type defect identification and segmentation using a standard open source computer vision model, YOLOv8, that leverages transfer learning to create a highly effective dislocation defect quantification tool while using only a minimal number of expert annotated micrographs for training. This model demonstrates the ability to segment both dislocation lines and loops concurrently in micrographs with high pixel noise levels and on multiple alloys. It includes multiple layers of frozen layers used for transfer learning from multidisciplinary data and is extensible to alloys that are not included in the training dataset.

Anderson, MatthewW↗
NASA NTRS1976

On onsagers principle, dislocation motion and hydrogen embrittlement

Onsager's reciprocal relationships from the linear theory of irreversible thermodynamics are applied to hydrogen - dislocation interactions. Existing experimental evidence shows that dislocation motion causes localized hydrogen accumulation; thus, from the Onsager principle, localized hydrogen accumulations will affect dislocation motion and therefore the properties of metals and alloys exposed to hydrogen environments.

Louthan, M. R., Jr.↗
NASA NTRS1982

High purity low dislocation GaAs single crystals

Recent advances in GaAs bulk crystal growth using the LEC (liquid encapsulated Czochralski) technique are described. The dependence of the background impurity concentration and the dislocation density distribution on the materials synthesis and growth conditions were investigated. Background impurity concentrations as low as 4 x 10 to the 15th power were observed in undoped LEC GaAs. The dislocation density in selected regions of individual ingots was very low, below the 3000 cm .3000/sq cm threshold. The average dislocation density over a large annular ring on the wafers fell below the 10000/sq cm level for 3 inch diameter ingots. The diameter control during the program advanced to a diameter variation along a 3 inch ingot less than 2 mm.

Chen, R. T.↗
NASA NTRS1982

Liquid encapsulated Czochralski growth of low dislocation GaAs

The availability of high-quality, large-diameter GaAs substrates is key to the successful development and production of high-speed GaAs devices and high-efficiency GaAs solar cells. The liquid encapsulated Czochralski (LEC) technique has provided a means for producing large-diameter GaAs. Progress in improving the LEC growth process which has resulted in 3-inch GaAs crystals with exceptionally low dislocation densities and reduced propensity for twinning is reported. Undoped, semi-insulating GaAs ingots were grown in a Melbourn high-pressure LEC system. The effects of seed perfection, seed necking, cone angle, melt stoichiometry, ambient pressure, thickness of the B2O3 encapsulating layer, and diameter control on the dislocation density were investigated. The material was characterized by preferential etching and X-ray topography. It is shown that 3-inch diameter substrates can be produced with dislocation densities as low as 6000 per sq cm through proper selection and control of growth parameters. Also, the incidence of twinning can be reduced significantly by growing from slightly As-rich melts.

Kirkpatrick, C. G.↗
NASA NTRS1984

Fermi energy control of vacancy coalescence and dislocation density in melt-grown GaAs

A striking effect of the Fermi energy on the dislocation density in melt-grown GaAs has been discovered. Thus, a shift of the Fermi energy from 0.1 eV above to 0.2 eV below its intrinsic value (at high temperature, i.e., near 1100 K) increases the dislocation density by as much as five orders of magnitude. The Fermi energy shift was brought about by n-type and p-type doping at a level of about 10 to the 17th per cu cm (under conditions of optimum partial pressure of As, i.e., under optimum melt stoichiometry). This effect must be associated with the fact that the Fermi energy controls the charge state of vacancies (i.e., the occupancy of the associated electronic states) which in turn must control their tendency to coalesce and thus the dislocation density. It appears most likely that gallium vacancies are the critical species.

Lagowski, J.↗
NASA NTRS1986

Dislocations in extruded Co-49.3 at. pct Al

Polycrystalline Co-49.3 at. pct Al, which had been extruded at 1505 K, was examined using transmission electron microscopy. Diffraction contrast analysis showed that b = 100 as well as b = 111 line dislocations contribute to elevated temperature deformation in CoAl. Therefore, it was concluded that sufficient slip systems exist in CoAl to allow for general plasticity in the absence of diffusional mechanisms. Line dislocations of the type b = 001 were observed on both 110 and 100 planes while b = 111 line dislocations were observed on 1 -1 0 planes.

Yaney, D. L.↗
NASA NTRS1986

Dislocation dynamics during the growth of silicon ribbon

The thermal viscoplastic stresses and the dislocation densities in silicon ribbon are computed for an axially changing thermal profile by using an iterative finite difference method. A material constitutive equation (Haasen-Sumino model) which involves an internal variable (mobile dislocation density) is used. The results are interpreted as showing that there is a maximum width of silicon ribbon that can be grown when viscoplasticity and dislocations are considered. This maximum width limitation does not exist if the material behavior is elastic.

Dillon, O. W., Jr.↗
NASA NTRS1990

The equivalence between dislocation pile-ups and cracks

Cracks and dislocation pile-ups are equivalent to each other. In this paper, the physical equivalence between cracks and pile-ups is delineated, and the relationshps between crack-extension force, force on the leading dislocation, stress-intensity factor, and dislocation density are reviewed and summarized. These relations make it possible to extend quantitatively the recent advances in the concepts and practices of fracture mechanics to the studies of microfractures and microplastic deformations.

Liu, H. W.↗
NASA NTRS1989

The role of interfacial dislocation networks in high temperature creep of superalloys

The dislocation networks generated during high-temperature creep of several single-crystal nickel-based superalloys are analyzed. The networks continually evolve during creep at relatively low temperatures or eventually reach a more stable configuration at high temperatures. Specifically, the role of these networks in directional coarsening processes are studied, along with their formation kinetics, characteristics, and stability during creep. The results of this study combined with previous findings suggest that the directional coarsening process is strongly influenced by elastic strain energy. The dislocation networks formed during primary creep are found to be stable during all subsequent creep stages. Aspects of these dislocation networks are determined to be a product of both the applied creep stress and coherency strains.

Gabb, T. P.↗