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At least 109 records · Page 6

Control Circuitry Using Electronic Emulation of a Synchro Signal for Accurate Control of Position and Rate of Rotation for Shafts

The invention herein disclosed is a digital circuit which emulates a synchro signal in a synchro-resolver follower system for precise control of shaft position and rotation at very low rotational rates. The subject invention replaces the synchro and drive motor in a synchroresolver follower system with a digital and analog synchro emulation circuit for generating the resolver control signal. The synchro emulation circuit includes amplitude modulation means to provide relatively high frequency resolver excitation signals for accurate resolver response even with very low shaft rotation rates.

Howard, David E.↗

Electronics Demonstrated for Low- Temperature Operation

The operation of electronic systems at cryogenic temperatures is anticipated for many NASA spacecraft, such as planetary explorers and deep space probes. For example, an unheated interplanetary probe launched to explore the rings of Saturn would experience an average temperature near Saturn of about 183 C. Electronics capable of low-temperature operation in the harsh deep space environment also would help improve circuit performance, increase system efficiency, and reduce payload development and launch costs. An ongoing research and development program on low-temperature electronics at the NASA Glenn Research Center at Lewis Field is focusing on the design of efficient power systems that can survive and exploit the advantages of low-temperature environments. The targeted systems, which are mission driven, include converters, inverters, controls, digital circuits, and special-purpose circuits. Initial development efforts successfully demonstrated the low-temperature operation and cold-restart of several direct-current/direct-current (dc/dc) converters based on different types of circuit design, some with superconducting inductors. The table lists some of these dc/dc converters with their properties, and the photograph shows a high-voltage, high-power dc/dc converter designed for an ion propulsion system for low-temperature operation. The development efforts of advanced electronic systems and the supporting technologies for low-temperature operation are being carried out in-house and through collaboration with other Government agencies, industry, and academia. The Low Temperature Electronics Program supports missions and development programs at NASA s Jet Propulsion Laboratory and Goddard Space Flight Center. The developed technologies will be transferred to commercial end users for applications such as satellite infrared sensors and medical diagnostic equipment.

Patterson, Richard L.↗

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗

Electro-optic architecture (EOA) for sensors and actuators in aircraft propulsion systems

Results of a study to design an optimal architecture for electro-optical sensing and control in advanced aircraft and space systems are described. The propulsion full authority digital Electronic Engine Control (EEC) was the focus for the study. The recommended architecture is an on-engine EEC which contains electro-optic interface circuits for fiber-optic sensors on the engine. Size and weight are reduced by multiplexing arrays of functionally similar sensors on a pair of optical fibers to common electro-optical interfaces. The architecture contains common, multiplex interfaces to seven sensor groups: (1) self luminous sensors; (2) high temperatures; (3) low temperatures; (4) speeds and flows; (5) vibration; (6) pressures; and (7) mechanical positions. Nine distinct fiber-optic sensor types were found to provide these sensing functions: (1) continuous wave (CW) intensity modulators; (2) time division multiplexing (TDM) digital optic codeplates; (3) time division multiplexing (TDM) analog self-referenced sensors; (4) wavelength division multiplexing (WDM) digital optic code plates; (5) wavelength division multiplexing (WDM) analog self-referenced intensity modulators; (6) analog optical spectral shifters; (7) self-luminous bodies; (8) coherent optical interferometers; and (9) remote electrical sensors. The report includes the results of a trade study including engine sensor requirements, environment, the basic sensor types, and relevant evaluation criteria. These figures of merit for the candidate interface types were calculated from the data supplied by leading manufacturers of fiber-optic sensors.

Glomb, W. L., Jr.↗

Interface Provides Standard-Bus Communication

Microprocessor-controlled interface (IEEE-488/LVABI) incorporates service-request and direct-memory-access features. Is circuit card enabling digital communication between system called "laser auto-covariance buffer interface" (LVABI) and compatible personal computer via general-purpose interface bus (GPIB) conforming to Institute for Electrical and Electronics Engineers (IEEE) Standard 488. Interface serves as second interface enabling first interface to exploit advantages of GPIB, via utility software written specifically for GPIB. Advantages include compatibility with multitasking and support of communication among multiple computers. Basic concept also applied in designing interfaces for circuits other than LVABI for unidirectional or bidirectional handling of parallel data up to 16 bits wide.

Culliton, William G.↗

Gated high speed optical detector

The design, fabrication, and test of two gated, high speed optical detectors for use in high speed digital laser communication links are discussed. The optical detectors used a dynamic crossed field photomultiplier and electronics including dc bias and RF drive circuits, automatic remote synchronization circuits, automatic gain control circuits, and threshold detection circuits. The equipment is used to detect binary encoded signals from a mode locked neodynium laser.

Green, S. I.↗

A Single-Chip Programmable Digital CMOS Imager with Enhanced Low Light Detection Capability

Low-power, low-cost, miniature and integrated digital imaging systems are expected to be widely used in consumer electronics in the near future. While CMOS technology has been responsible for the phenomenal growth in consumer electronics, micro-porcessors, memory, audio systems, and radio-frequency circuits (e.g. cellular phones), till recently, the video technology remained outside this mainstream.

digital↗

Improved reader for magnetically-encoded ID cards

Hybrid demodulator in electronic card reader for magnetically encoded identification cards, accommodates variations in insertion speeds, yet is simpler and less expensive than equivalent all-digital circuits.

Wu, T. T.↗

Micromachined TWTs for THz Radiation Sources

The Terahertz (THz) region of the electromagnetic spectrum (about 300 - 3000 GHz in frequency or about 0.1 - 1 mm free space wavelength) has enormous potential for high-data-rate communications, spectroscopy, astronomy, space research, medicine, biology, surveillance, remote sensing, industrial process control, etc. It has been characterized as the most scientifically rich, yet under-utilized, region of the electromagnetic spectrum. The most critical roadblock to full exploitation of the THz band is lack of coherent radiation sources that are powerful (0.001 - 1.0 W continuous wave), efficient (> 1%), frequency agile (instantaneously tunable over 1% bandwidths or more), reliable, and comparatively inexpensive. To develop vacuum electron device (VED) radiation sources satisfying these requirements, fabrication and packaging approaches must be heavily considered to minimize costs, in addition to the basic interaction physics and circuit design. To minimize size of the prime power supply, beam voltage must be minimized, preferably 10 kV. Solid state sources satisfy the low voltage requirement, but are many orders of magnitude below power, efficiency, and bandwidth requirements. On the other hand, typical fast-wave VED sources in this regime (e.g., gyrotrons, FELs) tend to be large, expensive, high voltage and very high power devices unsuitable for most of the applications cited above. VEDs based on grating or inter-digital (ID) circuits have been researched and developed. However, achieving forward-wave amplifier operation with instantaneous fractional bandwidths > 1% is problematic for these devices with low-energy (< 15 kV) electron beams. Moreover, the interaction impedance is quite low unless the beam-circuit spacing is kept particularly narrow, often leading to significant beam interception. One solution to satisfy the THz source requirements mentioned above is to develop micromachined VEDs, or "micro-VEDs". Among other benefits, micro-machining technologies provide superior high frequency wall conductivity as a result of superior surface smoothness compared with conventional mechanical or electric discharge machining approaches. Micro-VED technologies are already being applied to the development of millimeter-wave klystrons at Stanford Linear Accelerator Center and submillimeter-wave klystrons at the University of Leeds. We are investigating the use of micro-machining technologies to develop THz regime TWTs, with emphasis on folded-waveguide TWTs. The folded-waveguide TWT (FW-TWT) has several features that make it attractive for THz-regime micro-VED applications. It is a relatively simple circuit to design and fabricate, it is amenable to precision pattern replication by micro-machining, and it is has been demonstrated capable of forward-wave amplification with appreciable bandwidth. We are conducting experimental and computational studies of micro-VED FW-TWTs to examine their feasibility for applications at frequencies from 200 - 1000 GHz.

Booske, John H.↗

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Mueller, Carl↗

Phase-locked loops and their application

A collection of papers is presented on the characteristics and capabilities of phase-locked loops (PLLs), along with some applications of interest. The discussion covers basic theory (linear and nonlinear); acquisition; threshold; stability; frequency demodulation and detection; tracking; cycle slipping and loss of lock; phase-locked oscillators; operation and performance in the presence of noise; AGC, AFC, and APC circuits and systems; digital PLL; and applications and miscellaneous. With the rapid development of IC technology, PLLs are expected to be used widely in consumer electronics.

Lindsey, W. C.↗

Computer Interface For A Spectroreflectometer

FORTRAN program controls stepping motors and signal-processing electronics via S-100 computer bus. Group of spectroreflectometers modified to provide computer-controlled operation and data collection. Analog and digital signal-processing circuits enable use of computerized automatic data collection and analysis. Previously, spectroreflectometer data recorded on strip charts.

Hurd, William A.↗

Gas Flow Detection System

This system provides a portable means to detect gas flow through a thin-walled tube without breaking into the tubing system. The flow detection system was specifically designed to detect flow through two parallel branches of a manifold with only one inlet and outlet, and is a means for verifying a space shuttle program requirement that saves time and reduces the risk of flight hardware damage compared to the current means of requirement verification. The prototype Purge Vent and Drain Window Cavity Conditioning System (PVD WCCS) Flow Detection System consists of a heater and a temperature-sensing thermistor attached to a piece of Velcro to be attached to each branch of a WCCS manifold for the duration of the requirement verification test. The heaters and thermistors are connected to a shielded cable and then to an electronics enclosure, which contains the power supplies, relays, and circuit board to provide power, signal conditioning, and control. The electronics enclosure is then connected to a commercial data acquisition box to provide analog to digital conversion as well as digital control. This data acquisition box is then connected to a commercial laptop running a custom application created using National Instruments LabVIEW. The operation of the PVD WCCS Flow Detection System consists of first attaching a heater/thermistor assembly to each of the two branches of one manifold while there is no flow through the manifold. Next, the software application running on the laptop is used to turn on the heaters and to monitor the manifold branch temperatures. When the system has reached thermal equilibrium, the software application s graphical user interface (GUI) will indicate that the branch temperatures are stable. The operator can then physically open the flow control valve to initiate the test flow of gaseous nitrogen (GN2) through the manifold. Next, the software user interface will be monitored for stable temperature indications when the system is again at thermal equilibrium with the test flow of GN2. The temperature drop of each branch from its "no flow" stable temperature peak to its stable "with flow" temperature will allow the operator to determine whether a minimum level of flow exists. An alternative operation has the operator turning on the software only long enough to record the ambient temperature of the tubing before turning on the heaters and initiating GN2 flow. The stable temperature of the heated tubing with GN2 flow is then compared with the ambient tubing temperature to determine if flow is present in each branch. To help quantify the level of flow in the manifolds, each branch will be bench calibrated to establish its thermal properties using the flow detection system and different flow rates. These calibration values can then be incorporated into the software application to provide more detailed flow rate information.

Moss, Thomas↗

Simple photometer circuits using modular electronic components

Operational and peak holding amplifiers are discussed as useful circuits for bioluminescence assays. Circuit diagrams are provided. While analog methods can give a good integration on short time scales, digital methods were found best for long term integration in bioluminescence assays. Power supplies, a general photometer circuit with ratio capability, and variations in the basic photometer design are also considered.

Wampler, J. E.↗

Electron lithography STAR design guidelines. Part 1: The STAR user design manual

The STAR system developed by NASA enables any user with a logic diagram to design a semicustom digital MOS integrated circuit. The system is comprised of a library of standard logic cells and computer programs to place, route, and display designs implemented with cells from the library. Library cells of the CMOS metal gate and CMOS silicon gate technologies were simulated using SPICE, and the results are shown and compared.

Trotter, J. D.↗

Neural Networks Of VLSI Components

Concept for design of electronic neural network calls for assembly of very-large-scale integrated (VLSI) circuits of few standard types. Each VLSI chip, which contains both analog and digital circuitry, used in modular or "building-block" fashion by interconnecting it in any of variety of ways with other chips. Feedforward neural network in typical situation operates under control of host computer and receives inputs from, and sends outputs to, other equipment.

Eberhardt, Silvio P.↗