Heavy Ion-Induced Single-Event Leakage Current and Burnout in Homojunction GaN PIN Diodes
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A novel deep-ridge laser structure with atomic-layer deposition (ALD) sidewall passivation was proposed that enhances the optical characteristics of 8-µm ridge width III-nitride violet lasers on freestanding m -plane GaN substrates. The internal loss was determined using the variable stripe length method, where the laser structure with ALD sidewall passivation showed lower internal loss compared to the conventional shallow-ridge laser design. ALD sidewall passivation plays a critical role in device improvements; compared to the lasers without ALD sidewall passivation, the lasers with ALD sidewall passivation yield improved optoelectrical performance and longer lifetime under continuous-wave operation at high current density. This work demonstrates the importance of ALD sidewall passivation to laser performance, which enables high energy efficiency.
In this project, Lumileds, the University of Michigan, the University of New Mexico, Sandia National Laboratories, and Ohio State University conducted a collaborative and comprehensive research effort to investigate the most promising approaches to improve green and yellow InGaN LEDs. Advanced LED characterization methods and predictive model calculations were applied to design optimization experiments more effectively and accelerate the pace of improvements.
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Research on AlScN ferroelectric capacitors with film thicknesses of 40 and 24 nm.
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