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Microwave signals switched or modulated optically. Planar diode with transparent cathode made in BaAs, Si, and InSb versions. Depending on specific configuration and material, such diode used for optical modulation of microwave signal or as infrared detector. Transparent cathode fabricated on GaAs diode so diode illuminates to generate and control short-circuit current.
A double-barrier diode at room temperature has yielded oscillations with fundamental frequencies up to 56 GHz and second harmonics up to 87 GHz. The output powers at these frequencies were about 60 and 18 microW, respectively. These results are attributed to a recent improvement in the material parameters of the device and to the integration of the device into a waveguide resonator. The most successful diode to date has thin (about 1.5 nm) AlAs barriers, a 4.5-nm-wide GaAs quantum well, and 2 x 10 to the 17th/cu cm doping concentration in the n-GaAs outside the barriers. This particular diode is expected to oscillate at frequencies higher than those achieved by any reported p-n tunnel diode.
A compact device for spectrally combining many laser-diode beams into a single multi-wavelength beam has been developed for use in NASA's intersatellite communications programs. The prototype device combines seven 30 milliwatt beams into a single beam with 70 percent efficiency producing an output of approximately 150 milliwatts. All beams are coaxial and can be collimated with a single transmitter optical system. The combining technique is relatively insensitive to drifts in the laser-diode wavelength and provides both increased power output and laser-diode source redundancy. Combination of more than 100 laser-diodes producing an output greater than 5 watts appears feasible with this technique.
Diode formed by selective doping during epitaxial growth, starting with semi-insulating substrate. Use of high-mobility semiconductors like GaAs extends cutoff frequency. Either molecular-beam epitaxy (MBE) or organometallic chemical-vapor deposition used to form layers of diode. Planar growth process permits subsequent fabrication of arrays of diodes by standard photolithographic techniques, to achieve quasi-optical coupling of submillimeter radiation. Useful for generation of harmonics or heterodyne mixing in receivers for atmospheric and space spectroscopy operating at millimeter and submillimeter wavelengths. Used as frequency doublers or triplers, diodes of new type extend frequency range of present solid-state oscillators.
The Laboratory for Oceans is currently working on the development of compact laser diode array (LD) pumped Nd:YAG lasers for use in space-based altimetry and ranging. Laser diode-array pumping technology promises to increase the electrical to optical efficiency of solid state lasers by an order of magnitude with a lifetime increase of nearly three orders of magnitude relative to today's conventional flashlamp-pumped laser systems. The small size, efficiency, and ruggedness make LD-pumped solid state lasers ideal for space based applications. In an in-house RTOP effort, a novel multiple-pass LD-pumped Nd:YAG laser amplifier was designed and tested to increase the 100 microjoule output pulse energy of the Lightwave laser oscillator. Preliminary results have yielded a round trip amplifier gain of about 15 percent using 7 microjoule LD-pump energy. As a parallel activity, funding was recently obtained to investigate the possible use of custom made fiber optic arrays to obtain an efficient optical coupling mechanism between the emitting laser diode-arrays and the target solid state laser material. Fiber optic coupling arrays would allow for the easy manipulation of the spatial emitting pattern of the diode pump sources to match either an end or side pumping laser configuration.
Infrared spectroscopy of planetary atmospheres is performed at high spectral resolution comparable to that in the laboratory. This requires that laboratory spectroscopy use the highest resolution and the most accurate techniques. Tunable diode laser spectroscopy can supply many of the spectroscopic parameters needed by astronomers. In particular, line positions, line strengths, and collisional line widths are measured with diode lasers, and these are often among the best values available. Diode laser spectra are complimentary to lower resolution, broader-coverage Fourier transform spectra. Certain procedures must be adopted, however, when using diode lasers, for determining their output characteristics and for calibrating each spectrum against quality references.
In order to provide watt-level CW output power throughout the millimeter and submillimeter wave region, thousands of solid-state diodes have been monolithically integrated using a metal grid to produce a highly efficient frequency multiplier. Devices considered include GaAs Schottky diodes, thin MOS diodes, and GaAs Barrier-Intrinsic-N(+)diodes. The performance of the present compact low-cost device has been theoretically and experimentally validated.
The characteristics of a metal-oxide-metal (MOM) tunnel diode made of nickel, nickel-oxide, and gold, designed and fabricated by standard integrated circuit technology for use in FIR rectennas, are presented. The MOM tunnel diode was formed by overlapping a 0.8-micron-wide layer of 1000-A of nickel, which was oxidized to form a thin layer of nickel oxide, with a 1500 A-thick layer of gold. The dc current-voltage characteristics of the MOM diode showed that the current dependence on voltage was linear about zero bias up to a bias of about 70 mV. The maximum detection of a low-level signal (10-mV ac) was determined to be at a dc voltage of 70 mV across the MOM diode. The rectified output signal due to a chopped 10.6-micron CO2 laser incident upon the rectenna device was found to increase with dc bias, with a maximum value of 1000 nV for a junction bias of 100 mV at room temperature.
Header designed to contain laser diode. Output combined incoherently with outputs of other laser diodes in grating laser-beam combiner in optical communication system. Provides electrical connections to laser diode, cooling to thermally stabilize laser operation, and optomechanical adjustments that steer and focus laser beam. Range of adjustments provides for correction of worst-case decentering and defocusing of laser beam encountered with laser diodes. Mechanical configuration made simple to promote stability and keep cost low.
Information on laser diode array and transmission optics is given in viewgraph form. Information is given on coherent combining of laser diode arrays, amplification through a laser diode array, the far field pattern of a laser diode transmitter, and beam diameter at receiver vs. transmission distance.
A laser diode header has been fabricated for a grating laser beam combiner (GLBC). The laser diode header provides the thermal control, the drive electronics, and the optical system necessary for proper operation of the beam combiner. The diode header is required to provide diffraction limited optical performance while providing correction for worst case defocus aberration, 0.6 mrad excess divergence, and worst case decenter aberration, 1.0 mrad pointing error. The design of the header considered the mechanical design and the optical design together resulting in a small, self-contained header with 0.7 mrad range for focus correction and +/- 2.5 mrad of beam steering. The complete diode header is currently undergoing optical and mechanical performance testing.
A semiconductor diode structure useful for harmonic generation of millimeter or submillimeter wave radiation from a fundamental input wave is fabricated on a GaAs substrate. A heavily doped layer of n(sup ++) GaAs is produced on the substrate and then a layer of intrinsic GaAs on said heavily doped layer on top of which a sheet of heavy doping (++) is produced. A thin layer of intrinsic GaAs grown over the sheet is capped with two metal contacts separated by a gap to produce two diodes connected back to back through the n(sup ++) layer for multiplication of frequency by an odd multiple. If only one metal contact caps the thin layer of intrinsic GaAs, the second diode contact is produced to connect to the n(sup ++) layer for multiplication of frequency by an even number. The odd or even frequency multiple is selected by a filter. A phased array of diodes in a grid will increase the power of the higher frequency generated.
Available planar diodes for space-based applications at submillimeter wavelengths have not achieved either the required low junction capacitance or the low series resistance-junction capacitance product. Here, the development of a novel planar diode structure that overcomes both of these difficulties is outlined. The characteristics of these Schottky barrier mixer diodes are presented and electron micrographs are shown. The diode structure will allow planar technology to be extended throughout the submillimeter wavelength range.
A chemical vapor deposition (CVD) process has been used to produce device structures of n- and p-type 6H-SiC epitaxial layers on commercially produced single-crystal 6H-SiC wafers. Mesa-style p-n junction diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H-SiC diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 C. To observe avalanche breakdown of the p-n junction diodes, testing under a high-electrical-strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD-grown SiC diode.
Three positive/intrinsic/negative (PIN-diode) reflective CPW (coplanar waveguide) switches demonstrated. First includes series-mounted diode to bridge gap in center strip conductor of CPW. Second includes pair of diodes to short center strip conductor to ground planes. Third includes diode to switch between band-pass filter and notch filter. Isolation exceeds 20 dB, while insertion loss is less than 1 dB.
A new varactor diode process has been developed in which much of the processing is done from the back of an extremely thin semiconductor wafer laminated to a low-dielectric substrate. Back-to-back BNN diodes were fabricated with this technique; excellent DC and low-frequency capacitance measurements were obtained. Advantages of the new technique relative to other techniques include greatly reduced frontside wafer damage from exposure to process chemicals, improved capability to integrate devices (e.g. for antenna patterns, transmission lines, or wafer-scale grids), and higher line yield. BNN diodes fabricated with this technique exhibit approximately the expected capacitance-voltage characteristics while showing leakage currents under 10 mA at voltages three times that needed to deplete the varactor. This leakage is many orders of magnitude better than comparable Schottky diodes.
The applications of Q-switched lasers are well known, for example, laser radar, laser remote sensing, satellite orbit determination, Moon orbit and 'moon quake' determination, satellite laser communication, and many nonlinear optics applications. Most of the applications require additional properties of the Q-switched lasers, such as single-axial and/or single-transverse mode, high repetition rate, stable pulse shape and pulse width, or ultra compact and rugged oscillators. Furthermore, space based and airborne lasers for lidar and laser communication applications require efficient, compact, lightweight, long-lived, and stable-pulsed laser sources. Diode-pumped solid-state lasers (DPSSL) have recently shown the potential for satisfying all of these requirements. We will report on the operating characteristics of a diode-pumped, monolithic, self-Q-switched Cr,Nd:YAG laser where the chromium ions act as a saturable absorber for the laser emission at 1064 nm. The pulse duration is 3.5 ns and the output is highly polarized with an extinction ratio of 700:1. It is further shown that the output is single-longitudinal-mode with transform-limited spectral line width without pulse-to-pulse mode competition. Consequently, the pulse-to-pulse intensity fluctuation is less than the instrument resolution of 0.25 percent. This self-stabilization mechanism is because the lasing mode bleaches the distributed absorber and establishes a gain-loss grating similar to that used in the distributed feedback semiconductor lasers. A repetition rate above 5 KHz has also been demonstrated. For higher power, this laser can be used for injection seeding an amplifier (or amplifier chain) or injection locking of a power oscillator pumped by diode lasers. We will discuss some research directions on the master oscillator for higher output energy per pulse as well as how to scale the output power of the diode-pumped amplifier(s) to multi-kilowatt average power.
Narrowband radiation is produced from a pulsed alexandrite laser when injection seeded with the output of a low power, tunable, continuous wave single mode diode laser. Injection seeded power oscillators are easier to frequency stabilize than etalon narrowed lasers, are more efficient and less prone to optical damage. AlGaAs diode lasers are available with wavelengths from 760 to 770 nm in the oxygen A band that can be used for differential absorption lidar remote sensing of atmospheric pressure and temperature. Diodes with room temperature output at 740 nm may be cooled sufficiently to emit in the water vapor absorption band at 720-730 nm for humidity remote sensing. The diode laser linewidth of 200 MHz is sufficient to seed 2 or 3 longitudinal modes of the multi-transverse mode alexandrite laser, giving the pulsed laser a bandwidth of 0.007 to 0.014/cm.