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A new 0D metal halide (TEP)InBr 4 is reported. Structural and electronic properties were studied. The fabricated X-ray detector using a (TEP)InBr 4 single crystal showed a detection sensitivity of 569.85 μC Gy −1 cm −2 atE= 100 V mm −1 .
Here, we report the detail synthesis, single crystal structure characterization and magnetic properties of KLnSe 2 series obtained via solid state molten flux growth method. The crystal structures were characterized using single crystal x-ray diffraction. The KLnSe 2 (Ln = La, Ce, Pr and Nd) series crystallizes in the trigonal crystal system with the space group of R-3m (No. 166). The overall structure contains two-dimensional (2D) layers made from edged shared LnSe 6 -octahedra. Ln 3+ ions form a perfect triangular magnetic lattice which propagates along ab-plane. These triangular lattices are separated by the K + ions. The magnetic properties confirm that, Ce, Pr and Nd do not show any long-range ordering down to 0.4 K indicating frustrated magnetism in the KLnSe 2 series.
The advent of next-generation synchrotron radiation sources and X-ray free-electron lasers calls for high-quality Bragg-diffraction crystal optics to preserve the X-ray beam coherence and wavefront. This requirement brings new challenges in characterizing crystals in Bragg diffraction in terms of Bragg-plane height errors and wavefront phase distortions. Here, a quantitative methodology to characterize crystal optics using a state-of-the-art at-wavelength wavefront sensing technique and statistical analysis is proposed. The method was tested at the 1-BM-B optics testing beamline at the Advanced Photon Source for measuring silicon and diamond crystals in a self-referencing single-crystal mode and an absolute double-crystal mode. The phase error sensitivity of the technique is demonstrated to be at the λ/100 level required by most applications, such as the characterization of diamond crystals for cavity-based X-ray free-electron lasers.
Solvent extractions are used to separate actinide elements from fission products in nuclear waste streams and the successful isolation of specific species utilize subtle differences in metal ligand binding. Metal ligand binding is also important in crystallization of metal organic materials and herein we explore the importance of competitive binding in the tetrahydrofuran-2,3,4,5-tetracarboxylic acid (THFTCA) system. This ligand has been previously evaluated for the selective extraction of uranium from other lanthanides and actinides and in the current research, we evaluate the crystallization of uranyl-THFTCA complexes in the presence of Cu 2+ , Sr 2+ , Th 4+ , and Ce 3+ . Three major phases were formed in the crystallization experiments and characterized with single crystal X-ray diffraction, powder X-ray diffraction, thermogravimetric analysis, and Raman spectroscopy. Two of the resulting phases were novel (UTHF1 ((C 4 H 10 N 2 )[UO 2 (C 8 H 8 O 9 ) 2 ]∙2H 2 O) and UTHF2 (Na[(UO 2 )(C 8 H 5 O 9 )(H 2 O)]∙ 3.5 H 2 O)), whereas the third (CuTHF1) was previously reported in the literature. Raman spectroscopy was utilized to evaluate spectral changes in the mother liquor of UTHF1, UTHF2, and CuTHF1 over time to assess the crystallization process. Further, isothermal titration calorimetry was used to determine the binding constants for UO 2 2+ and Cu 2+ to the THFTCA ligand in solution and evaluate the role of competitive metal binding in this system. The thermodynamic parameters and the crystallographic data were used to justify the formation of a weaker UO 2 2+ -THFTCA complex. Formation of a weaker UO 2 2+ -THFTCA complex supports our findings that UTHF1 only forms in homomeric systems, but suggests that the crystallization of UTHF2 and CuTHF1 is reliant on the presence of additional counter ions and ligands to change the amount of available THFTCA ligand.
Eu(II)-containing chalcogenides are an emerging class of materials that are of great interest due to their high optical activity and intriguing magnetism. Here, we synthesized Eu 2 SiSe 4 as red-colored single crystals and characterized its structure with single-crystal X-ray diffraction, confirming the reported chiral monoclinic P2 1 symmetry at room temperature. The crystal structure of Eu 2 SiSe 4 comprises distorted SiSe 4 tetrahedral units and charge-balancing Eu(II) cations. Here, we develop a two-step solid-state synthesis method for Eu 2 SiSe 4 and compare it to the known boron chalcogenide method. We find the second-harmonic generation (SHG) activity of polycrystalline Eu 2 SiSe 4 to be ∼7 × AgGaS 2 , placing it among the highest-known SHG-active chalcogenides. No symmetry lowering is observed down to 100 K in single-crystal X-ray diffraction, although an anomalous expansion in the b-axis lattice parameter occurs and may be correlated to lattice modes of the SiSe 4 tetrahedra. We investigate the physical properties of Eu 2 SiSe 4 using magnetometry and heat capacity measurements and find a transition to an antiferromagnetic ground state at T N ≈ 5.5 K. The low-temperature transition releases less entropy than expected, which may be due to the complex crystal electric field effects of Eu(II).
Rock 71597, a coarse-grained plagioclase-poikilitic basalt that contains 15.8% MgO and 19.3% modal olivine, is described. Olivine and ilmenite crystals occur in two size generations, and large subequant olivine crystals, small 'matrix' olivines, and large ilmenite crystals are characterized. Since large olivine and ilmenite crystals with skeletal habits suggestive of crystallization under relatively rapid cooling are found in a rock whose texture is consonant with slower cooling, it is suggested that the large skeletal crystals formed toward the more rapidly cooled margin of a flow and accumulated by gravitational crystal settling toward the flow's interior. In support of this hypothesis, calculations indicate that the observed olivine compositions are approximately 10 mol% too Fe-rich to have crystallized from a melt of composition corresponding to that of 71597.
The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions.
The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. Significant effects of gravity vector orientation on the growth crystal morphology and point defect distribution were observed.
As a part of the Artemis mission, Gateway will be a long duration space station in a near rectilinear halo orbit around the Moon. Gateway will be exposed to a variety of external contamination sources, which can degrade external hardware / surfaces and impact science utilization objectives. Requirements and methodologies addressing material outgassing, chemical and electric thruster plumes, vacuum venting, and visiting vehicle interactions have been developed by the Gateway Induced Environments team to ensure vehicle performance and mission success. The external contamination requirements and integration process are described along with required data deliverables. Integrated external contamination analyses are conducted by the Gateway Environments Team to assess compliance with external contamination requirements. This paper provides a current status of integration activities and analysis results, as well as future plans to improve external contamination characterization.
As a part of the Artemis mission, Gateway will be a long duration space station in a near rectilinear halo orbit around the Moon. Gateway will be exposed to a variety of external contamination sources, which can degrade external hardware / surfaces and impact science utilization objectives. Requirements and methodologies addressing material outgassing, chemical and electric thruster plumes, vacuum venting, and visiting vehicle interactions have been developed by the Gateway Induced Environments team to ensure vehicle performance and mission success. The external contamination requirements and integration process are described along with required data deliverables. Integrated external contamination analyses are conducted by the Gateway Environments Team to assess compliance with external contamination requirements. This paper provides a current status of integration activities and analysis results, as well as future plans to improve external contamination characterization.
As a part of the Artemis mission, Gateway will be a long duration space station in a near rectilinear halo orbit around the Moon. Gateway will be exposed to a variety of external contamination sources, which can degrade external hardware / surfaces and impact science utilization objectives. Requirements and methodologies addressing material outgassing, chemical and electric thruster plumes, vacuum venting, and visiting vehicle interactions have been developed by the Gateway Induced Environments team to ensure vehicle performance and mission success. The external contamination requirements and integration process are described along with required data deliverables. Integrated external contamination analyses are conducted by the Gateway Environments Team to assess compliance with external contamination requirements. This paper provides a current status of integration activities and analysis results, as well as future plans to improve external contamination characterization.
ZnSe single crystals of high quality and low impurity levels are desired for use as substrates in optoelectronic devices. This is especially true when the device requires the formation of homoepitaxial layers. While ZnSe is commercially available, it is at present extremely expensive due to the difficulty of growing single crystal boules with low impurity content and the resultant low yields. Many researchers have found it necessary to heat treat the crystals in liquid Zn in order to remove the impurities, lower the resistivity and activate the photoluminescence at room temperature. The physical vapor transport method (PVT) has been successfully used at MSFC to grow many single crystals of II-VI semiconducting materials including ZnSe. The main goal at NASA has been to try to establish the effect of gravity on the growth parameters. To this effect, crystals have been grown vertically upwards or horizontally. Both (111) and (110) oriented ZnSe crystals have been obtained via unseeded PVT growth. Preliminary characterization of the horizontally grown crystals has revealed that Cu is a major impurity and that the low temperature photoluminescence spectra is dominated by the copper peak. The ratio of the copper peak to the free exciton peak is being used to determine variations in composition throughout the crystal. It was the intent of this project to map the copper composition of various crystals via photoluminescence first, then measure their electrical resistivity and capacitance as a function of frequency before proceeding with a heat treatment designed to remove the copper impurities. However, equipment difficulties with the photoluminescence set up, having to establish a procedure for measuring the electrical properties of the as-grown crystals and time limitations made us re-evaluate the project goals. Vertically grown samples designated as ZnSe-25 were chosen to be measured electrically since they were not expected to show as much variation in their composition through their cross-section as the horizontally grown samples.
Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.
The microgravity conditions of space travel result in unique physiological demands on the human body. In particular, the absence of the continual mechanical stresses on the skeletal system that are present on Earth cause the bones to decalcify. Trabecular structure decreases in thickness and increases in spacing, resulting in decreased bone strength and increased risk of injury. Thus, monitoring bone health is a high priority for long-term space travel. A single probe covering all frequency bands of interest would be ideal for such measurements, and this would also minimize storage space and eliminate the complexity of integrating multiple probes. This invention is an ultrasound transducer for the structural characterization of bone. Such characterization measures features of reflected and transmitted ultrasound signals, and correlates these signals with bone structure metrics such as bone mineral density, trabecular spacing, and thickness, etc. The techniques used to determine these various metrics require measurements over a broad range of ultrasound frequencies, and therefore, complete characterization requires the use of several narrowband transducers. This is a single transducer capable of making these measurements in all the required frequency bands. The device achieves this capability through a unique combination of a broadband piezoelectric material; a design incorporating multiple resonator sizes with distinct, overlapping frequency spectra; and a micromachining process for producing the multiple-resonator pattern with common electrode surfaces between the resonators. This device consists of a pattern of resonator bars with common electrodes that is wrapped around a central mandrel such that the radiating faces of the resonators are coplanar and can be simultaneously applied to the sample to be measured. The device operates as both a source and receiver of acoustic energy. It is operated by connection to an electronic system capable of both providing an excitation signal to the transducer and amplifying the signal received from the transducer. The excitation signal may be either a wide-bandwidth signal to excite the transducer across its entire operational spectrum, or a narrow-bandwidth signal optimized for a particular measurement technique. The transducer face is applied to the skin covering the bone to be characterized, and may be operated in through-transmission mode using two transducers, or in pulse-echo mode. The transducer is a unique combination of material, design, and fabrication technique. It is based on single-crystal lead magnesium niobate lead titanate (PMN-PT) piezoelectric material. As compared to the commonly used piezoceramics, this piezocrystal has superior piezoelectric and elastic properties, which results in devices with superior bandwidth, source level, and power requirements. This design necessitates a single resonant frequency. However, by operating in a transverse length-extensional mode, with the electric field applied orthogonally to the extensional direction, resonators of different sizes can share common electrodes, resulting in a multiply-resonant structure. With carefully sized resonators, and the superior bandwidth of piezocrystal, the resonances can be made to overlap to form a smooth, wide-bandwidth characteristic.
ZnSe and ZnSeTe single crystals were grown by physical vapor transport (PVT) technique horizontally and vertically. The grown ZnSe and ZnSeTe single crystals were characterized by low temperature photoluminescence at 5 to 10 K using the 3.4 eV emission of an argon laser. The intensity of the sharp near band edge defect lines at 2.799, 2.783 eV and the intrinsic free exciton line at 2.802 eV were mapped on various crystal surfaces with different orientations to the gravitational field. The results show the effects of gravity vector orientation on the defect segregation. Comparison of the photoluminescence spectra of the ZeSe crystal before and after annealing in the Zn vapor shows that the 2.783 eV line of ZnSe crystal is related to the zinc vacancy. The photoluminescence spectra of the ternary ZnSeTe crystal were characterized by a single broad band from 2.2 to 2.4 eV, with a Full Width at Half Maximum (FWHM) of about 100 meV. The temperature dependence of the peak position and intensity were determined from 7 to 150 K.
Polymorphism is an issue troubling numerous scientific fields. A phenomenon where molecules can arrange in different orientations in a crystal lattice, polymorphism in the field of organic photovoltaic materials can dramatically change electronic properties of these materials. Rubrene is a benchmark photovoltaic material showing high carrier mobility in only one of its three polymorphs. To use rubrene in devices, it is important to quantify the polymorph distribution arising from a particular crystal growth method. However, current methods for characterizing polymorphism are either destructive or inefficient for batch scale characterization. Lattice phonon Raman spectroscopy has the ability to distinguish between polymorphs based on low frequency intermolecular vibrations. Here, we present here the addition of microscopy to lattice phonon Raman spectroscopy, which allows us to not only characterize polymorphs efficiently and nondestructively through Raman spectroscopy but also concurrently gain information on the size and morphology of the polymorphs. We provide examples for how this technique can be used to perform large, batch scale polymorph characterization for crystals grown from solution and physical vapor transport.We end with a case study showing how Raman microscopy can be used to efficiently optimize a green crystal growth method, selecting for large orthorhombic crystals desired for rubrene electronic device applications.
A quantitative real time image processing system has been developed which can be software-reconfigured for semiconductor processing and characterization tasks. In thermal imager mode, 2D temperature distributions of semiconductor melt surfaces (900-1600 C) can be obtained with temperature and spatial resolutions better than 0.5 C and 0.5 mm, respectively, as demonstrated by analysis of melt surface thermal distributions. Temporal and spatial image processing techniques and multitasking computational capabilities convert such thermal imaging into a multimode sensor for crystal growth control. A second configuration of the image processing engine in conjunction with bright and dark field transmission optics is used to nonintrusively determine the microdistribution of free charge carriers and submicron sized crystalline defects in semiconductors. The IR absorption characteristics of wafers are determined with 10-micron spatial resolution and, after calibration, are converted into charge carrier density.
In this project, we attempted to make CdTe homojunctions using single crystal p-type doped substrates and closed-space sublimation epitaxy (CSSE) n-type doped films. The project included modeling which determined the ideal thickness for the n-type layer as being <200 nm. Boules of high concentration indium-doped CdTe and CdSe 0.4 Te 0.6 (CST) were grown using modified vertical Bridgman (MVB) methods. Similarly, iodine-doped CdTe crystals were grown for the first time. Washington State University (WSU) stock phosphorus-doped CdTe was used as the p-type substrate layer. The crystals were characterized by Hall effect and time-resolved photoluminescence (TRPL, for electrical properties), photoluminescence microscopy (for uniformity), X-ray diffraction (for crystal structure), and glow discharge mass spectrometry (GDMS, for dopant and impurity concentration). CdTe:I crystals were also characterized by visible and infrared transmission measurements, and various Cd or Te heat treatments were performed to assess changes in optical and electrical properties. The grown n-type materials – CdTe:In, CdSe0.4Te0.6:In, and CdTe:I – were provided to the National Renewable Energy Laboratory (NREL) for growth of CSSE thick films for characterization by two photon TRPL (for carrier lifetime), electron back-scatter diffraction (EBSD, to assess epitaxy), and Hall effect. Several measurements of secondary ion mass spectroscopy (SIMS) were performed. Nearly 100% of the indium from the crystal was incorporated into the measured thick films, while only ~2-22% of the iodine from the crystal was incorporated. The net result of the diffusion issue is that homojunction devices created using CSSE have a buried homojunction, as indicated by the near infrared peak in the external quantum efficiency (EQE). Various parameterization of front and back contacts suggested that the poor device performance was primarily a result of this buried junction and not due to other effects. There may also be an issue with the CSSE film lifetime in addition to the dopant profile.