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At least 109 records · Page 6

MoO3 Cathodes for High-Temperature Lithium Thin-Film Cells

MoO3 has shown promise as a cathode material that can extend the upper limit of operating temperature of rechargeable lithium thin-film electrochemical cells. Cells of this type are undergoing development for use as energy sources in cellular telephones, wireless medical sensors, and other, similarly sized portable electronic products. The LiCoO2 and LiMn2O4 cathodes heretofore used in these cells exhibit outstanding cycle lives (of the order of hundreds of thousands of cycles) at room temperature, but operation at higher temperatures reduces their cycle lives substantially: for example, at a temperature of 150 C, cells containing LiCoO2 cathodes lose half their capacities in 100 charge/discharge cycles. The superiority of MoO3 as a cathode material was demonstrated in experiments on lithium thin-film cells fabricated on glass slides. Each cell included a layer of Ti (for adhesion to the glass slide), a patterned layer of Pt that served as a cathode current collector, a cathode layer of MoO3, a solid electrolyte layer of Li3.3 PO3.8 N0.22 ("LiPON"), and an anode layer of Li. All the layers were deposited by magnetron sputtering except for the Li layer, which was deposited by thermal evaporation. These cells, along with similar ones containing LiCoO2 cathodes, were subjected to several tests, including measurements of specific capacity in charge/discharge cycling at a temperature of 150 C. The results of these measurements, plotted in the figure, showed that whereas specific capacity of the cells containing LiCoO2 cathodes faded to about half its initial value after only 100 cycles, the specific capacity of the cells containing the MoO3 cathodes faded only slightly during the first few hundred cycles and thereafter not only recovered to its initial value but continued to increase up to at least 5,500 cycles.

West, William↗

Silicon Solar Cell Process Development, Fabrication and Analysis

Solar cells were constructed from polycrystalline silicon sheet material (10 cm x 10 cm). These cells were made using conventional aerospace methods and serve as the so-called baseline cell for analysis and comparison with cells to be made from similar material, but using optimized processing techniques. Before and during the processing of the baseline cells in a cleaned diffusion tube, control cells were built using the baseline method. All cells were measured on a solar simulator at air mass zero and 28 C. Average efficiency for the baseline cells was 9.5%. Efficiency was found to vary with location in the sheet. Center regions had higher efficiencies whereas corner and edge regions had lower efficiencies. In general, the efficiency falls off with distance from the center of the sheet.

Minahan, J. A.↗

Fabrication of OSOS cells by neutral ion beam sputtering

Oxide semiconductor on silicon (OSOS) solar cells have been fabricated from various indium tin oxide (In2O3)x(SnO2)1-x compositions sputtered onto p-type single crystal silicon substrates with a neutralized argon ion beam. High temperature processing or annealing was not required. The highest efficiency was achieved with x = 0.91 and was 12 percent. The cells are environmentally rugged, chemically stable, and show promise for still higher efficiencies. Moreover, the ion beam sputtering fabrication technique is amenable to low cost, continuous processing.

Burk, D. E.↗

Effect of copper impurity on polycrystalline silicon solar cells

The presence of copper impurity, up to 10 to the 15th atoms/cc, in single crystal silicon has been shown to have no deleterious effect on the p-n junction solar cell performance. However, in polycrystalline silicon, copper atoms tend to migrate to the defect sites because of the structural sensitive properties of copper. This study was undertaken to investigate the influence of this behavior of copper impurity on the performance of p-n junction solar cells fabricated from structurally imperfect silicon. Two sets of polycrystalline silicon substrates containing copper were examined. In one set of samples, copper was incorporated during growth, whereas in the other, copper was diffused. Solar cells were fabricated on both the sets of substrates by a standard process. Dark and light I-V and spectral response characteristics of the cells were measured and compared with copper-free polycrystalline silicon solar cells. The results and the model are discussed.

Daud, T.↗

Development and pilot line production of lithium doped silicon solar cells

Scaling up the BCl3 without O2 diffusion beyond 30 to 40 cells was investigated by using a 100 cell capacity diffusion boat which held the cells vertically. Sheet resistances and I-V curves were uniform with 10 to 20 cells spaced along the entire boat, so the quantity was increased to 40 and then 60 cells per diffusion. There was no change in cell output and uniformity going from 20 to 40 cells per diffusion; however only half the lithium cells fabricated from slices diffused in the 60 cell diffusion had efficiencies of 11% or better. Although uniform sheet resistances and I-V characteristic curves were obtained with up to 60 cells in the BCl3 with O2 diffusion, the short circuit currents were approximately 15% lower than the anticipated 135 to 140 mA. Consequently, work on this diffusion process has been aimed solely at increasing the short circuit current. The diffusion temperature was lowered from 1055 to 1000 and 950 C, and at each of these temperatures variations in diffusion time were investigated. At 1000 C short circuit currents were approximately 10 mA higher, 130 rather than 120 mA average.

Payne, P. A.↗

Research plans for solar power in space.

The developments in space solar power technology are reviewed, with the emphasis on solar power output improvement as the goal of further efforts. It is contended that the biggest pay-off should be expected not from cost cutting in solar cell fabrication but from versatile improvement of solar cell designs to a feasible maximum.

Cohn, E. M.↗

Directional solidification of silicon in carbon crucibles by an oscillating crucible technique

The quality of silicon cast by present techniques is limited by the presence of dislocations and grain boundaries in unseeded growth and by cellular structures with dislocation networks in the case of the seeded growth. To address these concerns, a new method of directional solidification called the oscillating crucible technique (OCT) is developed. During growth, a carbon crucible is oscillated to provide for effective stirring of the melt. This growth technique (seeded growth only), along with material characterization and solar-cell fabrication and testing, is described. Solar-cell efficiencies of up to 13 percent at 100 mW/sq cm area obtained in the single crystalline areas. Minority-carrier diffusion lengths exceeding 100 microns are measured even in the polycrystalline areas of the wafers. Limitations of the present setup and possible future improvements are discussed.

Daud, T.↗

Point contact silicon solar cells

The construction of a 22.2% efficient single-crystal silicon solar cell fabricated at Stanford University is described. The cell dimensions were 3 x 5 mm and 100 microns thick with a base lifetime of 500 microseconds. The cell featured light trapping between a texturized top surface and a reflective bottom surface, small point contact diffusions, alternating between n-type and p-type in a polka-dot pattern on the bottom surface, and a surface passivation on all surfaces between contact regions.

Swanson, R. M.↗

Electron and proton damage on InGaAs solar cells having an InP window layer

As part of a continuing program to determine the space radiation resistance of InP/ln(0.53)Ga(0.47)As tandem solar cells, n/p In(0.53)Ga(0. 47)As solar cells fabricated by RTI were irradiated with 1 MeV electrons and with 3 MeV protons. The cells were grown with a 3 micron n-lnP window layer to mimic the top cell in the tandem cell configuration for both AMO solar absorption and radiation effects. The results have been plotted against 'displacement damage dose' which is the product of the nonionizing energy loss (NIEL) and the particle fluence. A characteristic radiation damage curve can then be obtained for predicting the effect of all particles and energies. AMO, 1 sun solar illumination IV measurements were performed on the irradiated InGaAs solar cells and a characteristic radiation degradation curve was obtained using the solar cell conversion efficiency as the model parameter. Also presented are data comparing the radiation response of both n/p and p/n (fabricated by NREL) InGaAs solar cells as a function of base doping concentration. For the solar cell efficiency, the radiation degradation was found to be independent of the sample polarity for the same base doping concentration.

Messenger, Scott R.↗

Progress towards high efficiency polycrystalline thin-film GaAs AMOS solar cells

Results of Ge film recrystallization using focused laser beams and GaAs film growth on such layers in the making of high efficiency thin-film AMOS solar cells are discussed. Since a conversion efficiency of 14% was obtained for an AMOS cell fabricated on sliced bulk polycrystalline GaAs, high efficiency cells are being developed by chemically vapor-depositing GaAs films on previously recrystallized evaporated Ge films to minimize the grain boundary (GB) effects. Schottky barrier solar cells made on sliced polycrystalline GaAs wafers were studied to investigate the effects of grain boundaries on cell properties and the potential efficiency of GaAs thin-film cells. Ge film recrystallization and the chemical vapor deposition (CVD) of the 2 to 3 micron thick GaAs films are described. AMOS solar cells with 100 Angstrom thick Ag metallization were made on CVD GaAs/recrystallized Ge/W substrates with an energy conversion efficiency of 8%.

Yeh, Y. C. M.↗

A study of the factors which control the efficiency of ion-implanted silicon solar cells

The objective of this work was to determine experimentally the ion-implantation parameters and furnace annealing conditions required to produce high-efficiency solar cells. A comprehensive experimental study was conducted in which the optimum ion-implantation parameters were found by a systematic variation of the implant parameters followed by detailed studies of solar-cell devices. Two furnace heat-treatment techniques were found which effectively anneal the implanted layers and at the same time preserve or improve the diffusion length in the bulk silicon. Detailed characteristics of both the junction and bulk properties of solar cells fabricated over the spectrum of implant parameters are discussed. Optimized implant parameters and annealing conditions were found which allow for the fabrication of 14-15-percent (AM1) efficient solar cells.

Douglas, E. C.↗

A detailed study of the photo-injection annealing of thermally diffused InP solar cells

A detailed analysis of the annealing of thermally diffused InP solar cells fabricated by the Nippon Mining Co. is presented. The cells were irradiated with 1 MeV electrons, and the induced degradation is measured using deep level transient spectroscopy and low temperature (86 K) IV measurements. Clear recovery of the photovoltaic parameters is observed during low temperature (T is less than 300 K) solar illuminations (1 sun, AMO) with further recovery at higher temperatures (300 less than T less than 500 K). For example, the output of a cell which was irradiated up to a fluence of 1 x 10(exp 16) cm(sup -2) was observed to recover to within 5 percent of the pre-irradiation output. An apparent correlation between the recovery of I(sub sc) and the annealing of the H4 defect and of the minority carrier trapping centers is observed. An apparent correlation between the recovery of VO, and the annealing of the H5 defect is also observed. These apparent correlations are used to develop a possible model for the mechanism of the recovery of the solar cells.

Walters, R. J.↗

Alternate charging profiles for the onboard nickel cadmium batteries of the Explorer Platform/Extreme Ultraviolet Explorer

The Explorer Platform/Extreme Ultraviolet Explorer (EP/EUVE) spacecraft power is provided by the Modular Power Subsystems (MPS) which contains three 50 ampere-hour Nickel Cadmium (NiCd) batteries. The batteries were fabricated by McDonnell Douglas Electronics Systems Company, with the cells fabricated by Gates Aerospace Batteries (GAB), Gainesville, Florida. Shortly following launch, the battery performance characteristics showed similar signatures as the anomalous performance observed on both the Upper Atmosphere Research Satellite (UARS) and the Compton Gamma Ray Observatory (CGRO). This prompted the development and implementation of alternate charging profiles to optimize the spacecraft battery performance. The Flight Operations Team (FOT), under the direction of Goddard Space Flight Center's (GSFC) EP/EUVE Project and Space Power Applications Branch have monitored and managed battery performance through control of the battery Charge to Discharge (C/D) ratio and implementation of a Solar Array (SA) offset. This paper provides a brief overview of the EP/EUVE mission, the MPS, the FOT's battery management for achieving the alternate charging profile, and the observed spacecraft battery performance.

Rao, Gopalakrishna M.↗

Design and fabrication of solar cell modules

A program conducted for design, fabrication and evaluation of twelve silicon solar cell modules is described. The purpose of the program was to develop a module design consistent with the requirements and objectives of JPL specification and to also incorporate elements of new technologies under development to meet LSSA Project goals. Module development emphasized preparation of a technically and economically competitive design based upon utilization of ion implanted solar cells and a glass encapsulation system. The modules fabricated, tested and delivered were of nominal 2 X 2 foot dimensions and 20 watt minimum rating. Basic design, design rationale, performance and results of environmental testing are described.

Shaughnessy, T. P.↗

InP materials/cell fabrication

The main points of discussion, conclusions and recommendations of a workshop on InP materials and cell fabrication are given. The importance of assessing the quality of p-Inp crystals supplied by different vendors, back contacts to solar cells, junction formation, energy conversion efficiency, testing for radiation resistance, and future develpments were among the topics discussed.

Coutts, T. J.↗