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A phase insensitive ultrasonic transducer which includes a CdS crystal that is annealed for a selected period of time and at a selected temperature to provide substantially maximum acoustic attenuation at the operating frequency of the transducer is described. Two electrodes are attached to the crystal with amplifier means and a signal processing system connected to one of the electrodes to provide an ultrasonic receiver.
The Computerized Design Synthesis (CDS) system under development at McDonnell Douglas Helicopter Company (MDHC) is targeted to make revolutionary improvements in both response time and resource efficiency in the conceptual and preliminary design of rotorcraft systems. It makes the accumulated design database and supporting technology analysis results readily available to designers and analysts of technology, systems, and production, and makes powerful design synthesis software available in a user friendly format.
A Gated CDS Integrator (GCI) may amplify low-level signals without introducing excessive offset and noise. The GCI may also amplify the low level signals with accurate and variable gain. The GCI may include a modulator preceding a linear amplifier such that offset or noise present in a signal path between the modulator and a demodulator input is translated to a higher out of band frequency.
A Gated CDS Integrator (GCI) may amplify low-level signals without introducing excessive offset and noise. The GCI may also amplify the low level signals with accurate and variable gain. The GCI may include a modulator preceding an amplifier such that offset or noise present in a signal path between the modulator and a demodulator input is translated to a higher out of band frequency, and thereafter reduced by a double sampled discrete time integrator which also reduces thermal noise. The thermal noise may also be reduced by averaging the output of the discrete time integrator.
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In this research, nanocrystalline cadmium sulfide thin films were produced by the spray pyrolysis technique on glass substrates. The effects of substrate temperature in the range 400–550 °C on the structural, morphological, optical, and electrical properties of the thin films were investigated. The thin films have been characterized by investigating their X-ray diffraction, field emission scanning electron microscope (FE-SEM), and optical absorption (UV–Vis) measurements. X-ray analysis revealed that thin films were a polycrystalline structure with the hexagonal phase in all cases and by increasing in substrate temperature, crystallite size decreases, and dislocation density increases. The FE-SEM images showed that the surface of the thin films is uniform, homogeneous and without cracks. The average sizes of the grains are at the range of 210–235 nm. The obtained values for optical band gap have been in the range of 2.18–2.41 eV, where the value of optical band gap for the thin films decreases by increasing substrate temperature. The Urbach energies of the thin films increase as the substrate temperature is increased. When substrate temperature increased from 400 to 550 °C, electrical resistivity increased from 531 to 2817 Ω cm, carrier concentration decreased from 15.96 × 10{sup 14} to 3.71 × 10{sup 14} cm{sup −3}, Hall mobility decreased from 7.37 to 5.98 cm{sup 2}/V s. Hall effect analysis indicated that the thin films exhibited n-type conductivity.
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