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At least 1,063 records · Page 59

Improving the damage tolerance of Si 3 N 4 by forming laminate composites with refractory metals

The objective of this research was to demonstrate that the damage tolerance of Si 3 N 4 could be significantly improved by forming laminate composites with refractory metals, providing materials that undergo graceful failure, rather than the fast-fracture mechanism exhibited by monolithic Si 3 N 4 . A damage tolerant Si 3 N 4 could be used as a ring material in an all-ceramic bearing, decreasing the chance for catastrophic failure if the ring is stressed in tension during operation. The technical approach formed a laminate composite material using alternating Si 3 N 4 -metallic layers, with both outer layers being Si 3 N 4 to take advantage of its greater wear resistance, chemical stability, and thermal stability. The metallic layers are designed to arrest any cracks in the outer layers, thus producing a toughened Si 3 N 4 and avoiding the catastrophic failure behavior exhibited by monolithic ceramics. The laminate composites were fabricated using a combination of tape-casting Si 3 N 4 and metals from slurries, as well as metal foils, followed by hot pressing at 1500°C. The metallic materials employed were chromium, titanium, and tantalum. Analysis confirmed that the interfaces were well formed, and the laminates with chromium and titanium formed intermetallic compounds more readily than the composites with tantalum. The Si 3 N 4 -Ta laminates demonstrated crack deflection and bridging behavior during failure and flexural strength of 800–900 MPa. The hardness and elastic modulus of Si 3 N 4 -Ta laminates measured by nanoindentation were similar to those reported in literature. The hardness across the interface of the Si 3 N 4 -Ta composite varied according to the composition of the interface, which displayed a profile indicative of a diffusion bond.

36 MATERIALS SCIENCE↗

Compositional Design of Soft Magnetic High Entropy Alloys by Minimizing Magnetostriction Coefficient in (Fe 0.3 Co 0.5 Ni 0.2 ) 100-x (Al 1/3 Si 2/3 ) x System

Developing cost-effective soft magnetic alloys with excellent mechanical properties is very important to energy-saving industries. This study investigated the magnetic and mechanical properties of a series of (Fe 0.3 Co 0.5 Ni 0.2 ) 100–x (Al 1/3 Si 2/3 ) x high-entropy alloys (HEAs) (x = 0, 5, 10, 15, and 25) at room temperature. The Fe 0.3 Co 0.5 Ni 0.2 base alloy composition was chosen since it has very the smallest saturation magnetostriction coefficient. It was found that the (Fe 0.3 Co 0.5 Ni 0.2 ) 95 (Al 1/3 Si 2/3 ) 5 alloy maintains a simple face-centered cubic (FCC) solid solution structure in the states of as-cast, cold-rolled, and after annealing at 1000 °C. The alloy after annealing exhibits a tensile yield strength of 235 MPa, ultimate tensile strength of 572 MPa, an elongation of 38%, a saturation magnetization (Ms) of 1.49 T, and a coercivity of 96 A/m. The alloy not only demonstrates an optimal combination of soft magnetic and mechanical properties, it also shows advantages of easy fabrication and processing and high thermal stability over silicon steel and amorphous soft magnetic materials. Therefore, the alloy of (Fe 0.3 Co 0.5 Ni 0.2 ) 95 (Al 1/3 Si 2/3 ) 5 holds good potential as next-generation soft magnets for wide-range industrial applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Shuttle active thermal control system development testing. Volume 7: Improved radiator coating adhesive tests

Silver/Teflon thermal control coatings have been tested on a modular radiator system projected for use on the space shuttle. Seven candidate adhesives have been evaluated in a thermal vacuum test on radiator panels similar to the anticipated flight hardware configuration. Several classes of adhesives based on polyester, silicone, and urethane resin systems were tested. These included contact adhesives, heat cured adhesives, heat and pressure cured adhesives, pressure sensitive adhesives, and two part paint on or spray on adhesives. The coatings attached with four of the adhesives, two silicones and two urethanes, had no changes develop during the thermal vacuum test. The two silicone adhesives, both of which were applied to the silver/Teflon as transfer laminates to form a tape, offered the most promise based on application process and thermal performance. Each of the successful silicone adhesives required a heat and pressure cure to adhere during the cryogenic temperature excursion of the thermal-vacuum test.

Reed, M. W.↗

Automated Array Assembly, Phase 2

The Automated Array Assembly Task, Phase 2 of the Low Cost Silicon Solar Array Project is a process development task. The contract provides for the fabrication of modules from large area tandem junction cells (TJC). During this quarter, effort was focused on the design of a large area, approximately 36 sq cm, TJC and process verification runs. The large area TJC design was optimized for minimum I squared R power losses. In the TJM activity, the cell-module interfaces were defined, module substrates were formed and heat treated and clad metal interconnect strips were fabricated.

Carbajal, B. G.↗

CCD research

The fundamental problems encountered in designing, fabricating, and applying CCD's are reviewed. Investigations are described and results and conclusions are given for the following: (1) the development of design analyses employing computer aided techniques and their application to the design of a grapped structure; (2) the role of CCD's in applications to electronic functions, in particular, signal processing; (3) extending the CCD to silicon films on sapphire (SOS); and (4) all aluminum transfer structure with low noise input-output circuits. Related work on CCD imaging devices is summarized.

Gassaway, J. D.↗

Array Automated Assembly Task for the Low Cost Solar Array Project, Phase 2

Using silk screened evaporated and sputtered Al as the metal source, the formation of Al back surface fields was studied. The most satisfactory results were those obtained with the sputtered A1 and in which open circuit voltages (V sub oc) of 0.585 v (12 ohm cm FZ silicon) were achieved. The ultrasonic interconnect process is discussed. The process is shown to be satisfactory, but increased pull-strength may be obtained if some form of sintering is carried out on the metallized contacts. Plasma etching is shown to be feasible as a replacement for wet chemical cleaning prior to diffusion. Initial results on cells prepared by using electroless Pd/Ni plus either electroplated Ag or Cu show slightly poor performance than cells with the baseline evaporated Ti/Pd/Ag system. A mask designed for the 1.6 x 7.0 cm and 2.0 x 7.0 cm cells is described. This mask has a lower area coverage and total lower resistive loss than the previous mask design. It is also shown that the cell width should not exceed 2.0 - 3.0 cm for optimum efficiency.

Campbell, R. B.↗

A Module Experimental Process System Development Unit (MEPSDU)

The technical readiness of a cost effective process sequence that has the potential for the production of flat plate photovoltaic modules which met the price goal in 1986 of $.70 or less per Watt peak was demonstrated. The proposed process sequence was reviewed and laboratory verification experiments were conducted. The preliminary process includes the following features: semicrystalline silicon (10 cm by 10 cm) as the silicon input material; spray on dopant diffusion source; Al paste BSF formation; spray on AR coating; electroless Ni plate solder dip metallization; laser scribe edges; K & S tabbing and stringing machine; and laminated EVA modules.

Source record↗

Chemical Vapor Deposition of Germanium of Silicon

Experimental work shows chemical vapor deposition (CVD) by pyrolysis of gaseous germanium tetrahydride provides epitaxial layers of germanium on silicon. Relatively low temperature of CVD process (500 degrees to 900 degrees C) reduces stresses that occur at layer/substrate interface during growth and cooling.

Aharoni, H.↗

Semiconductor technology program: Progress briefs

Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

Galloway, K. F.↗

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Valco, G. J.↗

Method of increasing minority carrier lifetime in silicon web or the like

A silicon dendrite is grown as a ribbon forming two silicon crystal layers which are separated by an interface layer which contains a large number of defects. Significant increase of minority carrier lifetime with homogeneous distribution at the outer surfaces of the two silicon crystal layers is achieved by processing the web in an atmosphere of a selected gas, e.g., oxygen, nitrogen or an inert gas, for about 30 minutes to several hours at a temperature preferably on the order of 900 to 1200 C.

Liu, J. K.↗

High-Strength, Low-Shrinkage Ceramic Tiles

Addition of refractory fibers and whiskers to insulating tiles composed primarily of fibrous silica, such as those used on the skin of Space Shuttle orbiter, greatly improves properties. New composition suitable for lightweight, thermally-stable mirror blanks and as furnace and kiln insulation. Improved tiles made with current tile-fabrication processes. For given density, tiles containing silicon carbide and boron additives stronger in flexure than tiles made from silica alone. In addition, tiles with additives nearly immune to heat distortion, whereas pure-silica tiles shrink and become severely distorted.

Wheeler, W. H.↗

Iron impurities in Si3N4 processing

The atomic environment of iron impurities is investigated during the processing cycle of reaction-bonding silicon nitride (RBSN). Several analysis techniques are utilized, including X-ray photoelectron spectroscopy (XPS), extended X-ray absorption fine structure (EXAFS), and electron spin resonance (ESR), to examine iron impurities in the starting silicon powder, in sintered silicon compacts, and in RBSN materials. Results indicate that iron impurities in as-received metallurgical grade silicon powder are incorporated in the silicon bulk as a highly distorted FeSi2 compound. No surface iron or iron-based particulate is observed in the starting material. Upon sintering, the iron environment becomes an ordered FeSi2 structure. In the RBNS material, the FeSi2 structure is again distorted, as observed by both EXAFS and ESR.

Bouldin, C. E.↗

The feasibility of silicon on garnet technology

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Functional MOSFETs have been fabricated on top of bubble films coated with 1-micron thick SiO2 layers. The large grain silicon necessary for these devices is obtained by laser recrystallization of polycrystalline silicon (polysilicon). The laser-recrystallization process causes changes in the magnetic properties of the bubble film; however, these changes can be reversed by subsequent thermal anneals. The required temperature treatments after laser annealing are compatible with the MOSFET fabrication process.

Rasky, P. H. L.↗