Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “junctions”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,063 records · Page 59

Polycrystalline or amorphous semiconductor photovoltaic device having improved collection efficiency

A body of semiconductor material having a first surface and a second surface spaced from the first surface includes a first layer along the first surface, a second layer along the second surface, a third layer between and contiguous to the first and second layers. The third layer is of a conductivity type opposite that of the first and second layers so as to form first and second P-N junctions respectively therebetween. The thickness of the third layer is at least twice the minority carrier diffusion length of the semiconductor material, so that carriers generated within the third layer have a high probability of being collected by one of the P-N junctions. The body includes means for electrically connecting the first and second P-N junctions and means for transferring the carriers collected at the first P-N junction to a portion of the first surface.

Kressel, Henry↗

Wire Crimp Connectors Verification using Ultrasonic Inspection

The development of a new ultrasonic measurement technique to quantitatively assess wire crimp connections is discussed. The amplitude change of a compressional ultrasonic wave propagating through the junction of a crimp connector and wire is shown to correlate with the results of a destructive pull test, which previously has been used to assess crimp wire junction quality. Various crimp junction pathologies (missing wire strands, incorrect wire gauge, incomplete wire insertion in connector) are ultrasonically tested, and their results are correlated with pull tests. Results show that the ultrasonic measurement technique consistently (as evidenced with pull-testing data) predicts good crimps when ultrasonic transmission is above a certain threshold amplitude level. A physics-based model, solved by finite element analysis, describes the compressional ultrasonic wave propagation through the junction during the crimping process. This model is in agreement within 6% of the ultrasonic measurements. A prototype instrument for applying the technique while wire crimps are installed is also presented.

Cramer, K. Elliott↗

GaAs Photovoltaics on Polycrystalline Ge Substrates

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Wilt, David M.↗

Exploration of CIGAS Alloy System for Thin-Film Photovoltaics on Novel Lightweight and Flexible Substrates

Thin-film photovoltaics (TFPV) on lightweight and flexible substrates offer the potential for very high solar array specific power (W/kg). ITN Energy Systems, Inc. (ITN) is developing flexible TFPV blanket technology that has potential for specific power greater than 2000 W/kg (including space coatings) that could result in solar array specific power between 150 and 500 W/kg, depending on array size, when mated with mechanical support structures specifically designed to take advantage of the lightweight and flexible substrates.(1) This level of specific power would far exceed the current state of the art for spacecraft PV power generation, and meet the needs for future spacecraft missions.(2) Furthermore the high specific power would also enable unmanned aircraft applications and balloon or high-altitude airship (HAA) applications, in addition to modular and quick deploying tents for surface assets or lunar base power, as a result of the high power density (W/sq m) and ability to be integrated into the balloon, HAA or tent fabric. ITN plans to achieve the high specific power by developing single-junction and two-terminal monolithic tandem-junction PV cells using thin-films of high-efficiency and radiation resistant CuInSe2 (CIS) partnered with bandgap-tunable CIS-alloys with Ga (CIGS) or Al (CIAS) on novel lightweight and flexible substrates. Of the various thin-film technologies, single-junction and radiation resistant CIS and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of TFPV device performance, with the best efficiency reaching 19.5% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys will achieve the highest levels of thin-film space and HAA solar array performance.

Woods, Lawrence M.↗

Multijunction Solar Cell Development and Production at Spectrolab

Development of multijunction space solar cells is much like that for any high technology product. New products face two major pressures from the market: improving performance while maintaining heritage. This duality of purpose is not new and has been represented since ancient times by the Roman god Janus.[1] This deity was typically represented as two faces on a single head: one facing forward and the other to the rear. The image of Janus has been used as symbolism for many combined forces of dual purpose, such as the balance in life between beginnings and endings, or between art and science. For our purposes, Janus represents our design philosophy balance between looking to the future for improvement while simultaneously blending past heritage. In the space photovoltaics industry there are good reasons for both purposes. Looking to the past, a product must have a space flight heritage to gain widespread use. The main reason being that this is an unforgiving business. Spacecraft are expensive to build, launch and operate. Typically once a satellite is launched, in-field service for a power systems problem is near impossible.[2Balanced with this is looking forward. New missions typically require more power than previous programs or attempt new objectives such as a new orbit. And there is always the cost pressure for both the satellite itself as well as the launch costs. Both of which push solar technology to improve power density at a lower cost. The consequence of this balance in a high-risk environment is that space PV develops as a series of infrequent large technology steps or generational changes interspersed with more frequent small technology steps or evolutionary changes. Figure 1 gives a bit of clarification on this point. It depicts the historical progress in space solar cells tracked by efficiency against first launch date for most major products introduced by Spectrolab. The first generation is the Si-based technology reaching a peak values near 15% AM0 (herein denoted for max. power, AM0, 1.353 W/cm2, 28 C). The GaAs single junction device generation supplanted this technology with first flight of GaAs on GaAs substrate in 1982.[3] More recently this generation has been supplanted by the multijunction solar cell GaInP/GaAs/Ge generation. The first launch of a commercial satellite powered by multijunction technology was in 1997 (Hughes HS 601HP) using solar arrays based on Spectrolab s dual junction (DJ) cells. The cells at that time were an impressive 21.5% efficient at beginning-of-life (BOL).[4] Eight years later, the multijunction device has evolved through several versions. The incorporation of an active Ge subcell formed the Triple Junction (TJ) product line at 25.1% efficient, on orbit since November 2001. The evolution of the TJ into the Improved Triple Junction (ITJ) at 26.8% efficient has been on orbit since June of 2002.[5]

Fetzer, Chris↗

Nanotechnology with Carbon Nanotubes: Mechanics, Chemistry, and Electronics

This viewgraph presentation reviews the Nanotechnology of carbon nanotubes. The contents include: 1) Nanomechanics examples; 2) Experimental validation of nanotubes in composites; 3) Anisotropic plastic collapse; 4) Spatio-temporal scales, yielding single-wall nanotubes; 5) Side-wall functionalization of nanotubes; 6) multi-wall Y junction carbon nanotubes; 7) Molecular electronics with Nanotube junctions; 8) Single-wall carbon nanotube junctions; welding; 9) biomimetic dendritic neurons: Carbon nanotube, nanotube electronics (basics), and nanotube junctions for Devices,

Srivastava, Deepak↗

Ka-Band TWT High-Efficiency Power Combiner for High-Rate Data Transmission

A four-port magic-T hybrid waveguide junction serves as the central component of a high-efficiency two-way power combiner circuit for transmitting a high-rate phase-modulated digital signal at a carrier frequency in the Ka-band (between 27 and 40 GHz). This power combiner was developed to satisfy a specific requirement to efficiently combine the coherent outputs of two traveling-wavetube (TWT) amplifiers that are typically characterized by power levels on the order of 100 W or more. In this application, the use of a waveguide-based power combiner (instead of a coaxial-cable- or microstrip-based power combiner, for example) is dictated by requirements for low loss, high power-handling capability, and broadband response. Combiner efficiencies were typically 90 percent or more over both the linear and saturated output power regions of operation of the TWTs . Figure 1 depicts the basic configuration of the magic-T hybrid junction. The coherent outputs of the two TWTs enter through ports 1 and 4. As a result of the orientations of the electromagnetic fields, which also provides a needed high port-to-port isolation, of these two input signals and the interior design of the magic-T junction, the input powers are divided so as to add in phase at one output port (port 2), and to be opposite in phase and hence cancel each other at the opposite coplanar output port (port 3). The net result is that the output power at port 2 is essentially double that of the output of one TWT, minus the power lost in the magic-T hybrid junction. Optimum performance as a high-efficiency power combiner thus requires a balance of both power and phase at the input ports of the magic-T. Replicas of this two-way combiner can be arranged in a binary configuration to obtain a 2n-way (where n is an integer) combiner. For example, Figure 2 illustrates the use of three two-way combiners to combine the outputs of four TWTs.

Wintucky, Edwin G.↗

Analysis of a Transonic Alternating Flow Phenomenon Observed During Ares Crew Launch Vehicle Wind Tunnel Tests

A transonic wind tunnel test of the Ares I-X Rigid Buffet Model (RBM) identified a Mach number regime where unusually large buffet loads are present. A subsequent investigation identified the cause of these loads to be an alternating flow phenomenon at the Crew Module-Service Module junction. The conical design of the Ares I-X Crew Module and the cylindrical design of the Service Module exposes the vehicle to unsteady pressure loads due to the sudden transition from separated to attached flow about the cone-cylinder junction with increasing Mach number. For locally transonic conditions at this junction, the flow randomly fluctuates back and forth between a subsonic separated flow and a supersonic attached flow. These fluctuations produce a square-wave like pattern in the pressure time histories which, upon integration result in large amplitude, impulsive buffet loads. Subsequent testing of the Ares I RBM found much lower buffet loads since the evolved Ares I design includes an ogive fairing that covers the Crew Module-Service Module junction, thereby making the vehicle less susceptible to the onset of alternating flow. An analysis of the alternating flow separation and attachment phenomenon indicates that the phenomenon is most severe at low angles of attack and exacerbated by the presence of vehicle protuberances. A launch vehicle may experience either a single or, at most, a few impulsive loads since it is constantly accelerating during ascent rather than dwelling at constant flow conditions in a wind tunnel. A comparison of a wind-tunnel-test-data-derived impulsive load to flight-test-data-derived load indicates a significant over-prediction in the magnitude and duration of the buffet load

Sekula, Martin K.↗

Current Pulses Momentarily Enhance Thermoelectric Cooling

The rates of cooling afforded by thermoelectric (Peltier) devices can be increased for short times by applying pulses of electric current greater than the currents that yield maximum steady-state cooling. It has been proposed to utilize such momentary enhancements of cooling in applications in which diode lasers and other semiconductor devices are required to operate for times of the order of milliseconds at temperatures too low to be easily obtainable in the steady state. In a typical contemplated application, a semiconductor device would be in contact with the final (coldest) somewhat taller stage of a multistage thermoelectric cooler. Steady current would be applied to the stages to produce steady cooling. Pulsed current would then be applied, enhancing the cooling of the top stage momentarily. The principles of operation are straightforward: In a thermoelectric device, the cooling occurs only at a junction at one end of the thermoelectric legs, at a rate proportional to the applied current. However, Joule heating occurs throughout the device at a rate proportional to the current squared. Hence, in the steady state, the steady temperature difference that the device can sustain increases with current only to the point beyond which the Joule heating dominates. If a pulse of current greater than the optimum current (the current for maximum steady cooling) is applied, then the junction becomes momentarily cooled below its lowest steady temperature until thermal conduction brings the resulting pulse of Joule heat to the junction and thereby heats the junction above its lowest steady temperature. A theoretical and experimental study of such transient thermoelectric cooling followed by transient Joule heating in response to current pulses has been performed. The figure presents results from one of the experiments. The study established the essential parameters that characterize the pulse cooling effect, including the minimum temperature achieved, the maximum temperature overshoot, the time to reach minimum temperature, the time while cooled, and the time between pulses. It was found that at large pulse amplitude, the amount of pulse supercooling is about a fourth of the maximum steady-state temperature difference. For the particular thermoelectric device used in one set of the experiments, the practical optimum pulse amplitude was found to be about 3 times the optimum steady-state current. In a further experiment, a pulse cooler was integrated into a small commercial thermoelectric threestage cooler and found to provide several degrees of additional cooling for a time long enough to operate a semiconductor laser in a gas sensor.

Snyder, G. Jeffrey↗

Methods of Fabricating Scintillators with Radioisotopes for Beta Battery Applications

Technology has been developed for a class of self-contained, long-duration power sources called beta batteries, which harvest the energy contained in the radioactive emissions from beta decay isotopes. The new battery is a significant improvement over the conventional phosphor/solar cell concept for converting this energy in three ways. First, the thin phosphor is replaced with a thick scintillator that is transparent to its own emissions. By using a scintillator sufficiently thick to completely stop all the beta particles, efficiency is greatly improved. Second, since the energy of the beta particles is absorbed in the scintillator, the semiconductor photodetector is shielded from radiation damage that presently limits the performance and lifetime of traditional phosphor converters. Finally, instead of a thin film of beta-emitting material, the isotopes are incorporated into the entire volume of the thick scintillator crystal allowing more activity to be included in the converter without self-absorption. There is no chemical difference between radioactive and stable strontium beta emitters such as Sr-90, so the beta emitter can be uniformly distributed throughout a strontium based scintillator crystal. When beta emitter material is applied as a foil or thin film to the surface of a solar cell or even to the surface of a scintillator, much of the radiation escapes due to the geometry, and some is absorbed within the layer itself, leading to inefficient harvesting of the energy. In contrast, if the emitting atoms are incorporated within the scintillator, the geometry allows for the capture and efficient conversion of the energy of particles emitted in any direction. Any gamma rays associated with secondary decays or Bremsstrahlung photons may also be absorbed within the scintillator, and converted to lower energy photons, which will in turn be captured by the photocell or photodiode. Some energy will be lost in this two-stage conversion process (high-energy particle to low-energy photons to electric current). The geometric advantage partially offsets this as well, since the absorption depth of high-energy beta radiation is much larger than the depth of a p-n junction. Thus, in a p-n junction device, much of the radiation is absorbed far away from the junction, and the electron- hole pairs are not all effectively collected. In contrast, with a transparent scintillator the radiation can be converted to light in a larger volume, and all of the light can be collected in the active region of the photodiode. Finally, the new device is more practical because it can be used at much higher power levels without unduly shortening its lifetime. While the crystal structure of scintillators is also subject to radiation damage, their performance is far more tolerant of defects than that of semiconductor junctions. This allows the scintillator- based approach to use both higher energy isotopes and larger quantities of the isotopes. It is projected that this technology has the potential to produce a radioisotope battery with up to twice the efficiency of presently used systems.

Rensing, Noa M.↗

Controlled, Site-Specific Functionalization of Carbon Nanotubes with Diazonium Salts

This work uses existing technologies to prepare a crossbar architecture of nano tubes, wherein one nanotube is fixed to a substrate, and a second nanotube is suspended a finite distance above. Both nano tubes can be individually addressed electrically. Application of opposite potentials to the two tubes causes the top tube to deform and to essentially come into contact with the lower tube. Contact here refers not to actual, physical contact, but rather within an infinitesimally small distance referred to as van der Walls contact, in which the entities may influence each other on a molecular and electronic scale. First, the top tube is physically deformed, leading to a potentially higher chemical reactivity at the point of deformation, based on current understanding of the effects of curvature strain on reactivity. This feature would allow selective functionalization at the junction via reaction with diazonium salts. Secondly, higher potential is achieved at the point of "cross" between the tubes. In a pending patent application, a method is claimed for directed self-assembly of molecular components onto the surface of metal or conductive materials by application of potential to the metal or conductive surface. In another pending patent application, a method is claimed for attaching molecules to the surface of nanotubes via the use of reactive diazonium salts. In the present invention, the directed functionalization of the crossed-nanotube junctions by applying a potential to the ends of the nanotubes in the presence of reactive diazonium slats, or other reactive molecular species is claimed. The diazonium salts are directed by the potential existing at the junction to react with the surface of the nanotube, thus placing functional molecular components at the junctions. The crossed nano tubes therefore provide a method of directly addressing the functionalized molecules, which have been shown to function as molecular switches, molecular wires, and in other capacities and uses. Site-specific functionalization may enable the use of nanotubes in molecular electronic applications because device functionality is critical at the cross points.

Tour, James M.↗

Systems and methods of adaptive two-wavelength single-camera imaging thermography (ATSIT) for accurate and smart in-situ process temperature measurement during metal additive manufacturing

A two-wavelength, single-camera imaging thermography system for in-situ temperature measurement of a target, comprising: a target light path inlet conduit for receiving a target light beam reflected from the target; a beam splitter installed in a splitter housing at a distal end of the target light path conduit, wherein the beam splitter divides the target light beam into a first light beam and a second light beam; a first light path conduit emanating from the splitter housing comprising a first aperture iris installed within the first light path conduit for aligning the first light beam; a first band pass filter installed within the first light path conduit for regulating the first light beam to a first wavelength λ1 and an optional half waveplate installed within the first light path conduit to modulate a polarization ratio of the first light beam of λ1 wavelength; a second light path conduit emanating from the splitter housing comprising a second aperture iris installed within the second light path conduit for aligning the second light beam; a second band pass filter installed within the second light path conduit for regulating the second light beam to a second wavelength λ2; a junction housing, wherein distal ends of each of the first and second light path conduits are connected to the junction housing; a polarizing beam splitter installed in the junction housing, wherein the polarizing beam splitter reflects the first light beam of λ1 wavelength along the same path or a parallel path of the second light beam of λ2 wavelength that passes directly through the polarizing beam splitter unreflected to create a merged light beam comprising light of λ1 and λ2 wavelengths; and a light path outlet conduit connected to the junction for directing the merged beam to a high-speed camera for imaging.

Zhao, Xiayun↗

Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs

Ultra-low voltage drop tunnel junctions (TJs) were utilized to enable multi-active region blue light emitting diodes (LEDs) with up to three active regions in a single device. The multi-active region blue LEDs were grown monolithically by metal-organic chemical vapor deposition (MOCVD) without growth interruption. This is the first demonstration of a MOCVD grown triple-junction LED. Optimized TJ design enabled near-ideal voltage and EQE scaling close to the number of junctions. Furthermore, this work demonstrates that with proper TJ design, improvements in wall-plug efficiency at high output power operation are possible by cascading multiple III-nitride based LEDs.

42 ENGINEERING↗

(abstract) All Epitaxial Edge-geometry SNS Devices with Doped PBCO and YBCO Normal Layers

We will present our results on tapered-edge-geometry SNS weak link fabricated from c-axis oriented base-, counterelectrode and normal layers using a variety of processing conditions. To date, we have employed a variety of different normal materials (Co-doped YBCO, Y-doped PBCO, Ca-doped PBCO). We have been examining the junction fabrication process in detail and we will present our methods. In particular, we have been examining both epitaxial and non-epitaxial milling mask overlayers and we will present a comparison of both methods. These devices behave similar to the expectations of the resisively shunted junction model and conventional SNS proximity effect models but with some differences which will be discussed. We will present the detailed systematics of our junctions including device parameters versus temperature, rf and dc magnetic response for the various processing conditions.

epitaxial doped PBCO YBCO junction fabrication mil↗

Understanding the Breakdown Behavior of Ultrawide-Bandgap Boron Nitride Power Diodes Using Device Modeling

Herein, a device study using technology computer-aided design simulation to theoretically analyze the electrical performance of ultrawide-bandgap boron nitride (BN)-based vertical junction devices is performed, including h-BN Schottky diode, h-BN pn diode, and h-BN/AlN pn diode; this is also the first demonstration of the BN power devices in simulation. The material properties of BN are defined with recently reported data, and the physical mechanisms of the device performance are systematically investigated. Additionally, the h-BN junctions in this simulation shows excellent performance, especially for breakdown behaviors. Schottky diode shows a turn-on voltage of 0.6 V for Pt Schottky contact and breakdown voltages over 450 V for 5 μm, 6 × 10 15 cm –3 p-type-doped drift layer; The h-BN pn diode shows a turn-on voltage of 6 V and breakdown voltages over 3 kV with a critical electric field of 13.6 MV cm –1 for 2.5 μm, 2 × 10 16 cm –3 p-type-doped drift layer. The h-BN/AlN heterojunction pn diode shows a turn-on voltage of 5.8 V and breakdown voltage over 2 kV for 2.5 μm, 2 × 10 16 cm –3 n-type-doped AlN drift layer. Herein, an understanding of the device principles of vertical BN junctions is provided, which can serve as a reference for the future development of robust BN power electronics.

36 MATERIALS SCIENCE↗

Perovskite Quantum Dot Solar Cells: Mapping Interfacial Energetics for Improving Charge Separation

Colloidal halide perovskite nanocrystals or quantum dots (QDs) show similar defect tolerance as thin film perovskite materials with added nanoscale phenomena. Perovskite QD solar cells have demonstrated efficiencies of 16.6%, greater than that of any other QD material system. While the efficiency lags behind the best thin-film perovskite devices, these solar cells could have advantages over the thin-film versions in terms of processability, phase stability, and high open-circuit voltages. However, some operating principles behind perovskite quantum dot device stacks and the associated electric field properties are still unknown. Here, we characterize the junction structure within perovskite QD solar cells, by exposing functioning cross-sections and using nanometer-scale Kelvin probe force microscopy to offer insight into the selection and performance of charge selective contacts. We also evaluated various solar cell device architectures with different selective contacts to isolate the role of each junction in device performance. We show that in high-performance n-i-p architectures, both electron- and hole-transport layer (HTL) interfaces possess a strong electric field, but in the case of the inverted p-i-n architecture, we find that high interfacial recombination at the HTL/QD junction is responsible for subpar device performance. Perovskite QD and thin film materials can synergistically be combined to offer more design flexibility in PV devices, and here we demonstrate that the interface between perovskite thin films and QDs are relatively benign and amenable for synergistic device design.

14 SOLAR ENERGY↗

Light-Matter Interaction in Ultrastable Tunneling Nanogaps

Light emission and detection through tunnel junctions have emerged as a promising platform for studying nanoscale light–matter interactions, including electroluminescence and photoassisted transport. However, controlling these interactions in the tunneling regime has been challenging due to complex underlying mechanisms that remain poorly understood. A major obstacle is the difficulty in forming stable junctions that can function reliably over extended periods. In this study, we fabricate ultrastable tunneling junctions consisting of epitaxial indium–tin-oxide, epitaxial lutetium oxide, and gold. With their stable and consistent tunneling currents, we investigate photon-assisted transport phenomena using simple direct-current detection. Our results demonstrate that optical rectification is the primary contributor to the laser-induced current, alongside thermal effects and hot-electron currents. Furthermore, owing to their epitaxial nature and high breakdown threshold, this ultrastable platform holds promise for future real-world applications, including nanoscale light sources and multifunctional photodetectors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

III-Nitride p-down green (520 nm) light emitting diodes with near-ideal voltage drop

We demonstrate p-down green emitting LEDs with low turn-on voltage enabled by efficient tunnel junctions. Due to the polarization field alignment in the (In,Ga)N/GaN interface with the p-down orientation, the electrostatic depletion barrier for electron and hole injection is reduced when compared with the conventional p-up LEDs. A single (In,Ga)N/GaN heterostructure quantum well active region with a GaN homojunction tunnel junction exhibited very low forward operating voltage of 2.42 V at 20 A/cm 2 with a peak electroluminescence emission wavelength of 520 nm for current densities above 100 A/cm 2 . Furthermore, the bottom tunnel junction with minimal voltage drop enabled excellent hole injection into the bottom p-GaN layer.

36 MATERIALS SCIENCE↗