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At least 1,063 records · Page 59

Co thickness dependence of structural and magnetic properties in spin quantum cross devices utilizing stray magnetic fields

We investigate the Co thickness dependence of the structural and magnetic properties of Co thin-film electrodes sandwiched between borate glasses in spin quantum cross (SQC) devices that utilize stray magnetic fields. We also calculate the Co thickness dependence of the stray field between the two edges of Co thin-film electrodes in SQC devices using micromagnetic simulation. The surface roughness of Co thin films with a thickness of less than 20 nm on borate glasses is shown to be as small as 0.18 nm, at the same scanning scale as the Co film thickness, and the squareness of the hysteresis loop is shown to be as large as 0.96–1.0. As a result of the establishment of polishing techniques for Co thin-film electrodes sandwiched between borate glasses, we successfully demonstrate the formation of smooth Co edges and the generation of stray magnetic fields from Co edges. Theoretical calculation reveals that a strong stray field beyond 6 kOe is generated when the Co thickness is greater than 10 nm at a junction gap distance of 5 nm. From these experimental and calculation results, it can be concluded that SQC devices with a Co thickness of 10–20 nm can be expected to function as spin-filter devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Study on the frequency characteristics of nanogap electron devices

Ballistic electron transport in the nanogap devices will make it practical to combine the advantages of solid-state devices and vacuum electron devices including high integration and high frequency characteristics. Although a number of experiments have been exploited on frequency characteristic in nanogap, less modeling or calculations were investigated at such scale yet. In this paper, the concept of mean flight time is proposed in order to theoretically determine the frequency in nanoscale. Traditionally, we have to first determine the frequency response diagram and then deduce the cut-off frequency. This work presents a new method for exploring the frequency characteristics of electron transport in a nanogap structure by calculations and numerical simulations. A double-gate structure was applied in the simulations, and the results suggest that the nanogap structure can perform in the THz range. Additionally, an equivalent circuit model was adopted to demonstrate the validity of this method. Our results provide a model for the intrinsic ballistic transportation of electrons inside the nanogap electron devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Charge transport studies in donor-acceptor block copolymer PDPP-TNT and PC71BM based inverted organic photovoltaic devices processed in room conditions

Diketopyrrolopyrole-naphthalene polymer (PDPP-TNT), a donor-acceptor co-polymer, has shown versatile behavior demonstrating high performances in organic field-effect transistors (OFETs) and organic photovoltaic (OPV) devices. In this paper we report investigation of charge carrier dynamics in PDPP-TNT, and [6,6]-phenyl C{sub 71} butyric acid methyl ester (PC71BM) bulk-heterojunction based inverted OPV devices using current density-voltage (J-V) characteristics, space charge limited current (SCLC) measurements, capacitance-voltage (C-V) characteristics, and impedance spectroscopy (IS). OPV devices in inverted architecture, ITO/ZnO/PDPP-TNT:PC71BM/MoO{sub 3}/Ag, are processed and characterized at room conditions. The power conversion efficiency (PCE) of these devices are measured ∼3.8%, with reasonably good fill-factor 54.6%. The analysis of impedance spectra exhibits electron’s mobility ∼2 × 10{sup −3} cm{sup 2}V{sup −1}s{sup −1}, and lifetime in the range of 0.03-0.23 ms. SCLC measurements give hole mobility of 1.12 × 10{sup −5} cm{sup 2}V{sup −1}s{sup −1}, and electron mobility of 8.7 × 10{sup −4} cm{sup 2}V{sup −1}s{sup −1}.

36 MATERIALS SCIENCE↗

All-optical switching of magnetoresistive devices using telecom-band femtosecond laser

Ultrafast all-optical switching of the magnetization of various magnetic systems is an intriguing phenomenon that can have tremendous impact on information storage and processing. Here, we demonstrate all-optical switching of GdFeCo alloy films using a telecom-band femtosecond fiber laser. We further fabricate Hall cross devices and electrically readout all-optical switching by measuring anomalous Hall voltage changes. The use of a telecom laser and the demonstrated all-optical switching of magnetoresistive devices represent the first step toward integration of opto-magnetic devices with mainstream photonic devices to enable novel optical and spintronic functionalities.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation

Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Synaptic devices based on purely electronic memristors

Memristive devices have been widely employed to emulate biological synaptic behavior. In these cases, the memristive switching generally originates from electrical field induced ion migration or Joule heating induced phase change. In this letter, the Ti/ZnO/Pt structure was found to show memristive switching ascribed to a carrier trapping/detrapping of the trap sites (e.g., oxygen vacancies or zinc interstitials) in ZnO. The carrier trapping/detrapping level can be controllably adjusted by regulating the current compliance level or voltage amplitude. Multi-level conductance states can, therefore, be realized in such memristive device. The spike-timing-dependent plasticity, an important Hebbian learning rule, has been implemented in this type of synaptic device. Compared with filamentary-type memristive devices, purely electronic memristors have potential to reduce their energy consumption and work more stably and reliably, since no structural distortion occurs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide

We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdO{sub x} bilayer system. Bipolar set and reset operations have been clearly observed in the Pt/GdO{sub x} system similarly in the vertical device based on GdO{sub x}. Interestingly, we were able to observe a clear bipolar switching also in a ferromagnetic CoFeB nano-gap electrode with better stability compared to the Pt/GdO{sub x} device. The superior performance of the CoFeB/GdO{sub x} device implies the importance of the spin on the resistive switching.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Metal nanoparticle mediated space charge and its optical control in an organic hole-only device

We reveal the role of localized space charges in hole-only devices based on an organic semiconductor with embedded metal nanoparticles (MNPs). MNPs act as deep traps for holes and reduce the current density compared to a device without MNPs by a factor of 10{sup 4} due to the build-up of localized space charge. Dynamic MNPs charged neutrality can be realized during operation by electron transfer from excitons created in the organic matrix, enabling light sensing independent of device bias. In contrast to the previous speculations, electrical bistability in such devices was not observed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Prime factorization using magnonic holographic devices

Determining the prime factors of a given number $N$ is a problem that requires super-polynomial time for conventional digital computers. A polynomial-time algorithm was invented by Shor for quantum computers. In this paper, we present experimental data that demonstrate prime factorization using spin-wave interference but without quantum entanglement. Prime factorization includes three major steps. First, a general-type computer calculates the sequence of numbers m k mod($N$), where $N$ is the number to be factorized, m is a randomly chosen positive integer, and k = 1, 2, 3, 4, 5, 6…. Next, the period of the calculated sequence $r$ is determined by exploiting spin-wave interference. Finally, the general-type computer determines the primes based on the obtained $r$. The experiment for period finding was conducted on a six-terminal Y 3 Fe 2 (FeO 4 ) 3 device. We chose number 15 for testing and determined its primes using a sequence of measurements. The obtained experimental data for a micrometer-sized prototype aimed to demonstrate the benefits of using spin-wave devices to solve complex computational problems. Scalability is one of the major strengths inherent in this type of wave-based device, which may provide a route to nanometer-sized logic circuits. We discuss the physical and technological limitations of this approach, which define the maximum size of N and the computational speed. Although this classical approach cannot compete with the quantum algorithm in terms of efficiency, magnonic holographic devices can potentially be used as complementary logic units aimed at speeding up prime factorization for classical computers.

97 MATHEMATICS AND COMPUTING↗

High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell

We consider a near-field electroluminescent refrigeration device. The device uses a GaAs light emitting diode as the cold side, and a Si photovoltaic cell as the hot side. The two sides are brought in close proximity to each other across a vacuum gap. The cooling is achieved by applying a positive bias on the GaAs light emitting diode. We show that the choice of GaAs and Si here can suppress the non-idealities for electroluminescent cooling purposes: GaAs has a wide bandgap with low Auger recombination, and Si is a non-polar semiconductor which leads to significantly reduced sub-bandgap heat transfer. We show that by using this configuration in the near-field regime, the cooling power density can reach 10 5 W/m 2 even in the presence of realistic Auger recombination and Shockley-Read-Hall recombination. In addition, with photovoltaic power recovery from the Si cell, the efficiency of the device can be further improved. Our work points to the significant potential of combining near-field heat transfer with active semiconductor devices for the control of heat flow.

14 SOLAR ENERGY↗

Effects of interfacial ligand type on hybrid P3HT:CdSe quantum dot solar cell device parameters

In this work, a series of CdSe quantum dot acceptors possessing six different ligand frameworks (i.e., pivalic acid, pyridine, butylamine, tert-butylthiol, thiophenol, and tetrahydrothiophene) were used as platforms for investigating the influence of quantum dot surface chemistry on the performance of hybrid poly(3-hexythiophene-2,5-diyl) (P3HT):CdSe quantum dot bulk heterojunction (BHJ) solar cells. We confirm that the device parameters used to evaluate solar cell performance are significantly influenced by the nature of the quantum dot surface ligand. The dependence of short circuit current density ($J_{SC}$) on the CdSe ligand type was probed using ultrafast time-resolved photoluminescence (PL) measurements, and good correlations between the ligand-dependent trends in $J_{SC}$ and excited state lifetime were found, in which the P3HT:CdSe quantum dot BHJs with the shortest PL lifetimes possess the largest device current densities. The frontier energy levels of the quantum dot acceptors are significantly influenced by surface ligands, wherein the device open circuit potentials (VOC) were found to linearly correlate with the energy difference ($ΔE_{DA}$) between the HOMO of the P3HT donor and the electrochemically determined LUMO of the CdSe quantum dot acceptors over a range of 220 mV. This work demonstrates the versatility of quantum dot ligand engineering for tuning the device parameters and performance of hybrid solar cells.

14 SOLAR ENERGY↗

Advances in terahertz solid-state physics and devices

Terahertz (THz) science and technology have attracted tremendous attention owing to their potential applications in areas including high-speed communications, nondestructive evaluation, biological and medical sensing, and national security.1,2 Terahertz waves bridge electronics and photonics, as well as classical and quantum physics, making them equally attractive for fundamental studies of novel physical phenomena. To realize a broad range of real terahertz applications, it is essential to develop compact solid- state devices for terahertz sources, detectors, modulators, and compact systems. These devices often employ quantum materials and heterostructures and can incorporate other features including carrier transfer using atomic layer epitaxy, micro- and electromechanical systems, plasmonic resonators, and metamaterials. To optimize these devices, we have to understand and control ultrafast carrier dynamics in these advanced materials. Furthermore, we have organized a Special Topic in the Journal of Applied Physics to highlight the state-of-the-art in terahertz solid-state devices while also unveiling the properties of these materials on an ultrafast timescale.

47 OTHER INSTRUMENTATION↗

Effect of selenium and chlorine co-passivation in polycrystalline CdSeTe devices

CdTe-based solar cell efficiency has rapidly improved over the last few years. Some of the reasons have been a change to the absorber composition including the incorporation of selenium, and better front contact and emitter materials in CdTe photovoltaic devices. In addition to the increase in short-circuit current by reducing the bandgap, Se plays other important roles in passivation of defects thus improving the conversion efficiency of CdSeTe/CdTe graded absorber photovoltaic devices. Here, we combine structural and optical characterizations with first principles calculations to investigate the role of Se and Cl segregation in CdSeTe devices. We find that in the presence of Se and Cl, the minority carrier lifetime improves due to a reduction of midgap defect states. Here, we also correlate this effect with defect passivation in CdSeTe devices and suggest innovative ways to further improve CdTe-based photovoltaic efficiency.

14 SOLAR ENERGY↗

Antifouling strategies for protecting bioelectronic devices

Bioelectronic devices are playing an increasingly important role in many areas of our lives. They power a significant portion of medical diagnostics and are becoming more and more important for delivery of therapeutics and monitoring of chronic symptoms. However, surface fouling phenomena, and especially biofouling in complex biological fluids, restricts the performance of these devices and severely reduces their useful lifespan. In this Research Update, we discuss the main principles and strategies that researchers use to prevent fouling and minimize or remove the foulants from bioelectronic device surfaces. We also survey a variety of antifouling approaches that can enhance device performance.

36 MATERIALS SCIENCE↗

Evidence for a thermally driven charge-density-wave transition in 1T-TaS 2 thin-film devices: Prospects for GHz switching speed

We report on the room-temperature switching of 1T-TaS 2 thin-film charge-density-wave devices, using nanosecond-duration electrical pulsing to construct their time-resolved current–voltage characteristics. The switching action is based upon the nearly commensurate to incommensurate charge-density-wave phase transition in this material, which has a characteristic temperature of 350 K at thermal equilibrium. For sufficiently short pulses, with rise times in the nanosecond range, self-heating of the devices is suppressed, and their current–voltage characteristics are weakly nonlinear and free of hysteresis. This changes as the pulse duration is increased to ~200 ns, where the current develops pronounced hysteresis that evolves nonmonotonically with the pulse duration. By combining the results of our experiments with a numerical analysis of transient heat diffusion in these devices, we clearly reveal the thermal origins of their switching. In spite of this thermal character, our modeling suggests that suitable reduction of the size of these devices should allow their operation at GHz frequencies.

36 MATERIALS SCIENCE↗

Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications

In the last two decades, the third-generation wide bandgap semiconductor III-nitrides have revolutionized a myriad of electronic and photonic devices and applications, including power electronics, extreme-environment electronics, RF amplifiers, and optoelectronics such as light-emitting diodes and laser diodes. Recently, III-nitride heterostructures (e.g., AlGaN/GaN) based intersubband transition (ISBT) has garnered considerable research interest for infrared (IR), terahertz (THz), and ultrafast optoelectronics (e.g., photodetectors and quantum cascade lasers) due to its large conduction band offset, large optical phonon energy, and promising room-temperature operation. This paper presents a comprehensive review on the recent progress and challenges of III-nitrides based ISBT from the perspectives of materials, structures, devices, and applications, with a focus on nonpolar and semipolar III-nitrides. Various device structures have been demonstrated for III-nitrides based ISBT, including quantum wells, dots, and wires, among which AlGaN/GaN quantum wells are the most widely used. The effects of device parameters, crystal orientations, and doping on the ISBT properties of AlGaN/GaN quantum wells are discussed. Although the room-temperature operation is still elusive, theoretical and experimental studies show that nonpolar and semipolar III-nitrides based ISBT exhibits tunable ISBT wavelength from far-IR to THz spectral range with higher efficiency compared with polar c-plane ISBT. This review can serve as a gateway to and an important reference for the recent progress and challenges of III-nitrides based ISBT and its potential applications in sensing, communication, ultrafast optoelectronics, and integrated photonics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Self-consistent integrated modeling of combined hybrid discharge-laser produced plasma devices for extreme ultraviolet metrology

Discharge- and laser-produced plasma (DLPP) devices are being used as light sources for extreme ultraviolet (EUV) generation. A key challenge for both, DPP and LPP, is achieving sufficient brightness to support the throughput requirements of nanometrology tools. To simulate the environment of a hybrid DLPP device and optimize the EUV output, we have developed an integrated HEIGHTS-DLPP computer simulation package. The package integrates simulation of two evolving plasmas (DPP and LPP) and includes modeling of a set of integrated self-consistent processes: external power source and plasma energy balance, plasma resistive magnetohydrodynamics, plasma heat conduction, detailed radiation transport (RT), and laser absorption and refraction. We simulated and optimized DLPP devices using Xe gas as a target material. We synchronized the external circuit parameters, chamber gas parameters, and laser beam temporal and spatial profiles to achieve maximum EUV output. The full 3D Monte Carlo scheme was integrated for detailed RT and EUV output calculations in Xe using more than 3600 spectral groups. The modeling results are in good agreement with Julich Forschungszentrum experimental data. Theoretical models, developed and integrated into the HEIGHTS package, showed wide capabilities and flexibility. In conclusion, the models and package can be used for optimization of the experimental parameters and settings, investigation of DLPP devices with complex design, analyzing the impact of integrated spatial effects and working timeline arrangement on the final EUV output, and EUV source size, shape, and angular distribution.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗