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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,063 records · Page 59
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Embedded FPGA developments in 130 nm and 28 nm CMOS for machine learning in particle detector readout

Embedded field programmable gate array (eFPGA) technology allows the implementation of reconfigurable logic within the design of an application-specific integrated circuit (ASIC). This approach offers the low power and efficiency of an ASIC along with the ease of FPGA configuration, particularly beneficial for the use case of machine learning in the data pipeline of next-generation collider experiments. An open-source framework called "FABulous" was used to design eFPGAs using 130 nm and 28 nm CMOS technology nodes, which were subsequently fabricated and verified through testing. The capability of an eFPGA to act as a front-end readout chip was assessed using simulation of high energy particles passing through a silicon pixel sensor. A machine learning-based classifier, designed for reduction of sensor data at the source, was synthesized and configured onto the eFPGA. A successful proof-of-concept was demonstrated through reproduction of the expected algorithm result on the eFPGA with perfect accuracy. Finally, further development of the eFPGA technology and its application to collider detector readout is discussed.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Electronic Properties of Ultra‐Wide Bandgap B x Al 1− x N Computed from First‐Principles Simulations

Abstract Ultra‐wide bandgap (UWBG) materials such as AlN and BN hold great promise for future power electronics due to their exceptional properties. They exhibit large bandgaps, high breakdown fields, high thermal conductivity, and high mechanical strengths. AlN and BN have been extensively researched, however, their alloys, B x Al 1− x N, are much less studied despite their ability to offer tunable properties by adjusting x . In this article, the electronic properties of 17 recently predicted ground states of B x Al 1− x N in the x = 0 − 1 range are predicted using first‐principles density functional theory and many‐body perturbation theory within GW approximation. All the B x Al 1− x N structures are found to be UWBG materials and have bandgaps that vary linearly from that of wurtzite‐phase ( w ) AlN (6.19 eV) to that of w ‐BN (7.47 eV). The bandstructures of B x Al 1− x N show that a direct‐to‐indirect bandgap crossover occurs near x = 0.25. Furthermore, it is found that B x Al 1− x N alloys have much larger dielectric constants than the constituent bulk materials (AlN = 9.3 ɛ 0 or BN = 7.3 ɛ 0 ), with values reaching as high as 12.1 ɛ 0 . These alloys are found to exhibit large dielectric breakdown fields in the range 9–35 MV cm −1 with a linear dependence on x . This work provides the much needed advancement in the understanding of the properties of B x Al 1− x N to aid their application in next‐generation devices.

Milne, Cody L.↗
DOE OSTI2020

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.

42 ENGINEERING↗
DOE OSTI2023

Investigation of local distortion effects on X-ray absorption of ferroelectric perovskites from first principles simulations

Understanding the role of ferroelectric polarization in modulating the electronic and structural properties of crystals is critical for advancing these materials for overcoming various technological and scientific challenges. However, due to difficulties in performing experimental methods with the required resolution, or in interpreting the results of methods therein, the nanoscale morphology and response of these surfaces to external electric fields has not been properly elaborated. Here, in this work, we investigate the effect of ferroelectric polarization and local distortions in a BaTiO 3 perovskite, using two widely used computational approaches which treat the many-body nature of X-ray excitations using different philosophies, namely the many-body, delta-self-consistent-field determinant (mb-ΔSCF) and the Bethe–Salpeter equation (BSE) approaches. We show that in agreement with our experiments, both approaches consistently predict higher excitations of the main peak in the O–K edge for the surface with upward polarization. However, the mb-ΔSCF approach mostly fails to capture the L 2,3 separations at the Ti–L edge, due to the absence of spin–orbit coupling in Kohn–Sham density functional theory (KS-DFT) at the generalized gradient approximation level. On the other hand, and most promising, we show that application of the GW/BSE approach successfully reproduces the experimental XAS, both the relative peak intensities as well as the L 2,3 separations at the Ti–L edges upon ferroelectric switching. Thus simulated XAS is shown to be a powerful method for capturing the nanoscale structure of complex materials, and we underscore the need for many-body perturbation approaches, with explicit consideration of core-hole and multiplet effects, for capturing the essential physics in these systems.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Analysis and Control of a Three-Port Converter with High-Frequency AC Link for Hybrid Unmanned/Autonomous Aerial Vehicles

In this study, a three-port resonant converter with a high-frequency isolation link for hybrid unmanned/autonomous aerial vehicle (UAV/AAV) applications is analyzed. The rectified engine-generator set output supplies the first input ports while the other is connected to a battery energy storage system. Input ports consist of half-bridge high-frequency inverters, whereas output port utilizes a semi-bridgeless active rectifier. This rectifier is formed by replacing rectifier low-side diodes with active switching devices. A phase-shift duty-cycle control is implemented for switching signals to regulate the power share and flow between ports. The proposed control system implemented achieves zero voltage switching (ZVS), reduces switching losses, and minimum current flow optimization ensures regulation in a wide range of output power. Compared to the existing bidirectional pulse width modulation (PWM) converters, the proposed system decreases the number of power conversion stages and provides centralized control without needing communications between the ports. The proposed control technique operating in closed-loop control achieves the power flow between ports under various load conditions. Finally, theoretical analysis demonstrates the proposed converter’s viability and laboratory experimental validations at 500 W full power.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

Advances in Molecular Beam Epitaxy Growth of Ultra-Wide Bandgap Ga2O3 Based Alloys

Gallium oxide (Ga2O3) is an emerging ultra-wide bandgap semiconductor material that has attracted attention for its potential to outperform existing SiC and GaN based devices operating at high breakdown voltages and high temperature. Isovalent alloying of In and Al in Ga2O3 provides the ability to engineer bandgap energy and strain of the material. Alloying with Al increases the bandgap energy and the theoretically achievable Baliga's figure of merit, a key measure of a material's ultimate performance limits for high power switching devices. Alloying with In introduces compressive strain and can be used to counteract the tensile strain of Al incorporation. The resulting (AlxGa1-x-yIny)2O3 alloy can be lattice-matched to commercially available Ga2O3 wafers and has a tunable bandgap energy greater than that of Ga2O3, 4.76 eV. Such lattice-matched material can be grown arbitrarily thick without the detrimental effects of elastic strain and relaxation, making it suitable for high voltage diodes and transistors. However, efforts to synthesize isovalent alloys are complicated by their tendency to phase separate into corundum Al2O3 or bixbyite In2O3. Literature reports of the quaternary (AlxGa1-x-yIny)2O3 are limited to <1% unintentional indium incorporation in In-catalyzed (AlxGa1-x)2O3. The primary limitation to quaternary growth is the limited incorporation of indium at elevated growth temperatures. This limited incorporation is due to both the volatility of indium oxide and Al and Ga cation exchange reactions which replace indium in In2O3. We report on the development of a novel high-throughput molecular beam epitaxy (MBE) technique to screen the growth conditions for the ternary alloy (InyGa1-y)2O3, and the application of these findings to the first successful synthesis of phase pure monoclinic (AlxGa1-x-yIny)2O3 by MBE. By leveraging the unique sub-oxide chemistry of Ga2O3 and in-situ monitoring of crystal properties by reflection high-energy electron diffraction (RHEED), a cyclical growth and etch-back method is developed and applied to rapidly characterize the (InyGa1-y)2O3 growth space. This cyclical method provides approximately 10x increase in experimental throughput and up to 46x improvement in Ga2O3 substrate utilization. Appropriate growth conditions for monoclinic (InyGa1- y)2O3 are identified by machine learning analysis of RHEED patterns and targeted growths are characterized ex-situ to confirm improved In incorporation. These growth conditions are then combined with established (AlxGa1-x)2O3 growth conditions to grow quaternary (AlxGa1-x-yIny)2O3 with Al mole fractions ranging from 1.4% - 24.4% and In mole fractions ranging from 3.1% to 15.5%. The chemical and optical properties of the alloys are investigated by XRD, XPS, and spectroscopic ellipsometry. A lattice-matched (AlxGa1-x-yIny)2O3 alloy is examined by 4D-STEM and the chemical and physical uniformity of Al and In incorporation are discussed.

alloy↗
DOE OSTI2024

ACS Spotlight: Bipolar Membranes for Electrochemical Energy Conversion, Chemical Manufacturing, and Separations

Sustainable energy conversion, chemical manufacturing, and separations are central to addressing the world’s energy and environmental challenges. Electrochemical platforms stand as a cornerstone in addressing these challenges because they are low exergy and can be powered on renewable electrons. In electrochemical systems, bipolar membranes (BPMs) are emerging as a unique class of ion exchange membranes poised to revolutionize various electrochemical processes via pH control of anode and cathode chambers and in situ pH adjustment. In this Spotlight Review, we provide a comprehensive review of electrochemical platforms utilizing BPMs for energy conversion (water electrolyzers for hydrogen production, fuel cells, and flow batteries), chemical manufacturing (electrolyzers that convert carbon dioxide into value-added chemicals and nitrate into ammonia), and separations. The motivation for using BPMs, as well as their performance and durability, in electrochemical platforms are disseminated. We also discuss current challenges that impede BPM electrochemical systems from competing with state-of-the-art electrochemical systems using monopolar ion-exchange membranes (e.g., anion/hydroxide exchange membranes and cation/proton exchange membranes). Here, the review also covers molecular modeling and continuum modeling efforts to understand the basic mechanisms that govern BPM performance.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2024

Utilization of formic acid by extremely thermoacidophilic archaea species

The exploration of novel hosts with the ability to assimilate formic acid, a C1 substrate that can be produced from renewable electrons and CO 2 , is of great relevance for developing novel and sustainable biomanufacturing platforms. Formatotrophs can use formic acid or formate as a carbon and/or reducing power source. Formatotrophy has typically been studied in neutrophilic microorganisms because formic acid toxicity increases in acidic environments below the pKa of 3.75 (25°C). Because of this toxicity challenge, utilization of formic acid as either a carbon or energy source has been largely unexplored in thermoacidophiles, species that possess the ability to produce a variety of metabolites and enzymes of high biotechnological relevance. Here we investigate the capacity of several thermoacidophilic archaea species from the Sulfolobales order to tolerate and metabolize formic acid. Metallosphaera prunae, Sulfolobus metallicus and Sulfolobus acidocaldarium were found to metabolize and grow with 1–2 mM of formic acid in batch cultivations. Formic acid was co-utilized by this species alongside physiological electron donors, including ferrous iron. To enhance formic acid utilization while maintaining aqueous concentrations below the toxicity threshold, we developed a bioreactor culturing method based on a sequential formic acid feeding strategy. By dosing small amounts of formic acid sequentially and feeding H 2 as co-substrate, M. prunae could utilize a total of 16.3 mM of formic acid and grow to higher cell densities than when H 2 was supplied as a sole electron donor. These results demonstrate the viability of culturing thermoacidophilic species with formic acid as an auxiliary substrate in bioreactors to obtain higher cell densities than those yielded by conventional autotrophic conditions. Our work underscores the significance of formic acid metabolism in extreme habitats and holds promise for biotechnological applications in the realm of sustainable energy production and environmental remediation.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2023

Process-dependent anisotropic thermal conductivity of laser powder bed fusion AlSi10Mg: impact of microstructure and aluminum-silicon interfaces

Purpose AlSi10Mg alloy is commonly used in laser powder bed fusion due to its printability, relatively high thermal conductivity, low density and good mechanical properties. However, the thermal conductivity of as-built materials as a function of processing (energy density, laser power, laser scanning speed, support structure) and build orientation, are not well explored in the literature. This study aims to elucidate the relationship between processing, microstructure, and thermal conductivity. Design/methodology/approach The thermal conductivity of laser powder bed fusion (L-PBF) AlSi10Mg samples are investigated by the flash diffusivity and frequency domain thermoreflectance (FDTR) techniques. Thermal conductivities are linked to the microstructure of L-PBF AlSi10Mg, which changes with processing conditions. The through-plane exceeded the in-plane thermal conductivity for all energy densities. A co-located thermal conductivity map by frequency domain thermoreflectance (FDTR) and crystallographic grain orientation map by electron backscattered diffraction (EBSD) was used to investigate the effect of microstructure on thermal conductivity. Findings The highest through-plane thermal conductivity (136 ± 2 W/m-K) was achieved at 59 J/mm 3 and exceeded the values reported previously. The in-plane thermal conductivity peaked at 117 ± 2 W/m-K at 50 J/mm 3 . The trend of thermal conductivity reducing with energy density at similar porosity was primarily due to the reduced grain size producing more Al-Si interfaces that pose thermal resistance. At these interfaces, thermal energy must convert from electrons in the aluminum to phonons in the silicon. The co-located thermal conductivity and crystallographic grain orientation maps confirmed that larger colonies of columnar grains have higher thermal conductivity compared to smaller columnar grains. Practical implications The thermal properties of AlSi10Mg are crucial to heat transfer applications including additively manufactured heatsinks, cold plates, vapor chambers, heat pipes, enclosures and heat exchangers. Additionally, thermal-based nondestructive testing methods require these properties for applications such as defect detection and simulation of L-PBF processes. Industrial standards for L-PBF processes and components can use the data for thermal applications. Originality/value To the best of the authors’ knowledge, this paper is the first to make coupled thermal conductivity maps that were matched to microstructure for L-PBF AlSi10Mg aluminum alloy. This was achieved by a unique in-house thermal conductivity mapping setup and relating the data to local SEM EBSD maps. This provides the first conclusive proof that larger grain sizes can achieve higher thermal conductivity for this processing method and material system. This study also shows that control of the solidification can result in higher thermal conductivity. It was also the first to find that the build substrate (with or without support) has a large effect on thermal conductivity.

Engineering↗
DOE OSTI2022

Plasma Processing for In-Situ Field Emission Mitigation of Superconducting Radiofrequency (SRF) Cryomodules

Field emission (FE) is one of the main limiting factors of superconducting radio-frequency (SRF) cavities operating in accelerators and it occurs whenever contaminants, like dust, metal flakes or even absorbates, are present on the surface of the cavity high electric field region. Field emission reduces the maximum achievable accelerating field and generates free electrons that may interact with the beam, damage or activate the beamline. One practical method that can be used to mitigate this problem is in-situ plasma cleaning, or plasma processing. The development of a processing that can be applied in-situ is extremely advantageous, since it enables the recovery of the cryomodule performance without the need of disassembling the whole cryomodule, which is an extremely expensive and time-consuming process. On the other hand, plasma processing only requires the cryomodule warm-up to room-temperature and the subsequent processing of the contaminated cavities. The entire process is reasonably quick and involves a limited number of personnel. For these reasons we would like to advocate for continuing to invest in the R&D of plasma processing to optimize its applicability in cryomodules and for extending the technique to other frequency ranges and cavities geometries.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

The role of focusing geometry in MeV x-ray production from petawatt laser–solid interaction

Relativistic laser–plasma interactions provide a compact and flexible route to generating bright, ultrashort pulses of MeV x rays, with applications in high-energy density science, nuclear physics, and radiography. Despite extensive study of intensity scaling in laser-driven electron acceleration, the role of focusing geometry and focal-volume effects in MeV radiation production remains insufficiently understood. Here, we present experimental and kinetic simulation results from the Texas Petawatt Laser (120 J, 140 fs) in which the focusing geometry (f/3 or f/1.5) is varied, while the laser energy and pulse duration are fixed. Experimentally, the f/3 geometry produces approximately three times more MeV radiation than the f/1.5 geometry, despite its twofold lower nominal vacuum intensity. This result is based on the time-integrated radiation per unit solid angle, as measured along the diagnostic line of sight. Three-dimensional particle-in-cell simulations reproduce this trend when a modest (10s of μm) effective focal plane shift is introduced, demonstrating that relativistic laser–plasma coupling is highly sensitive to focal geometry in the presence of a preplasma. This behavior is consistent with differences in interaction length and effective intensity at the critical surface between the two configurations. The sensitivity of the tightly focused f/1.5 configuration ($z_R ≈$⁠ 5 μ m) reflects the combined influence of thermal lensing and an extended preplasma, while the f/3 geometry (⁠$z_R ≈$ 80 μ m) remains comparatively robust. These results demonstrate a breakdown of conventional intensity scaling and identify focusing geometry as a critical control parameter for MeV electron and x-ray generation at petawatt powers. Implications for laser–plasma-based radiographic facilities are also discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors

Abstract Optically addressable light valves (OALVs) are specialized optical components utilized for spatial beam shaping in various laser‐based applications, including optics damage mitigation, and enhanced functionality in diode‐based additive manufacturing requiring high intensities. Current state‐of‐the‐art OALVs employ photoconductors such as Bismuth Silicon Oxide (BSO) or Bismuth Germanium Oxide (BGO), which suffer from limited laser‐induced damage thresholds (LiDT) and inadequate thermal conductivities, thus restricting their use in high peak and average power applications. Aluminum nitride (AlN), an emerging ultra‐wide band gap (UWBG) III–V semiconductor, offers promising optoelectronic properties and superior thermal conductivity (>300 Wm −1 K −1 at 298° K, compared to BSO's 3.29 Wm −1 K −1 ). In this study, the first AlN‐based OALVs are designed, fabricated, and experimentally demonstrated using commercially available single‐crystal AlN substrates. These AlN‐based OALVs have shown clear superiority over BSO and BGO‐based devices. Design considerations for OALVs incorporating UWBG photoconductors are discussed, and the photoresponsivity from defect‐mediated sub‐bandgap absorption in AlN crystals is verified as sufficient for OALVs operating under high light fluences. The optimum driving voltage for the AlN‐based OALV is determined to be ≈ 45 V pp at 100 Hz, achieving a transmittance of 91.3%, an extinction ratio (ER) of more than 100, and a 51:1 image contrast.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Spacetime pq theory for AC and DC electric power systems

The 50/60 Hz alternating current (AC) electric power has been the standard and most flexible energy source powering our modern societies for one and a half centuries since the war of the currents: AC versus direct current (DC). A reactive power concept that was introduced at the beginning of the AC power was very useful for circuit/system analysis, design, control, optimization, and ultimately for more efficient and stable generation, transmission, distribution, and consumption. The initial reactive power theory was based on single-phase sinusoidal AC power to capture inductive and capacitive power that yields to net-zero average power over one fundamental cycle. Soon it was expanded to non-sinusoidal AC power and finally to instantaneous three-phase AC power. However, these reactive power theories remain separate and limited to special cases and have never been consolidated and made valid to all cases. Today, more widespread adoption of power electronics and renewable energy is bringing back DC power into the electric grids. The reactive power concept has never been applied to DC power systems. There is no reactive power in DC power systems according to the existing reactive power theories. Do DC power systems really have no reactive power? Capacitors and inductors are widely used in DC just like in AC power systems. Are they not reactive power components? Why are they different from their AC counterparts? Furthermore, are batteries active or reactive power components? What about active devices like power converters (or inverters) with AC (or DC) on one side and DC (or AC) on the other? Do they generate or consume reactive power? Finally, what about AC and DC hybrid power systems? How to define reactive power in such a complex power system that has a multitude of loads, buses, and sources? Is there reactive power between any two loads, any two buses, or any two sources in a power system and what is the total reactive power in such a complex power system as a whole? As the motivation and goal of this paper to answer the above basic questions, to unify the existing AC reactive power theories and to ultimately provide theoretical and insightful guidance for system analysis, design, control, efficiency, optimization, and operation of complex power systems, a concept of spacetime (both spatial and temporal) active and reactive power (pq) theory—the spatiotemporal aspect of active and reactive power—is developed for both AC and DC power systems. The theoretical definitions and physical meanings of the spacetime reactive power will be developed, and real applications and thought experiments/cases/exercises will be explored and discussed. The developed mathematics to define the active (or real) and reactive (or imaginary) power— p and q respectively by dot (scalar) and cross (vector) products of multi-dimension spacetime vectors and time-space mapping principle/law can have some fundamental implications as well.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Capillary-Enhanced Two-Phase Micro-Cooler Using Copper-Inverse-Opal Wick with Silicon Microchannel Manifold for High-Heat-Flux Cooling Application

In this work, we demonstrate a two-phase capillary-fed boiling micro-cooler that consists of a ~ 25-..mu..m-thick copper inverse opal (CIO) porous wicking structure for high-heat-flux boiling and a silicon 3D-manifold for distributed liquid delivery and vapor extraction across a 0.5 cm x 0.5 cm heated area. At low inlet water mass flow rates of 1.5 to 1.9 g(min)-1, the micro-cooler displays nearly two-phase boiling with exit vapor quality ~ 1 and a high critical heat flux (CHF) of 253 to 320 W cm-2 with low superheat of ~ 10 degrees C resulting in a thermal resistance of boiling ~ 0.025 cm2 degrees C W-1 or heat transfer coefficient of 0.4 MW m-2 degrees C-1. For higher flow rates of 5, 10, and 15 g(min)-1, the micro-cooler exhibits a hybrid single-phase and two-phase cooling regime where the contribution of the sensible heat (single-phase) cooling is linearly added to that of the two-phase cooling. For the highest flow rate of 15 g(min)-1, the CHF is increased to ~ 500 W cm-2 resulting in an overall thermal resistance of ~ 0.18 cm2 degrees C W-1. However, the two-phase heat transfer effectiveness, which estimates the utilization level of the inlet mass flow rate for two-phase boiling, is reduced to ~ 0.11. To achieve the best cooling system performances, the micro-cooler must operate entirely within the two-phase boiling regime (exit vapor quality or two-phase heat transfer effectiveness ~ 1). Ideally, the "coolant" should be delivered near its saturation temperature (~ 100 degrees C for water), which provides significant advantages for the energy-efficient operation of data centers and power electronics. We present detailed analysis with Infrared and high speed camera images at various inlet flow rates and heat fluxes to understand complex heat transfer in the micro-cooler. Furthermore, a conjugate thermofluidic simulation model, which incorporates the physics of capillary-fed boiling in a porous copper layer, agrees well with the experimental data.

capillary-enhanced boiling↗
DOE OSTI2022

Monofluorination of Naphthyls Promotes the Cofacial π–π Stacking and Increases the Electron Mobility of Non-Planar Zinc(II) Complexes of Di(naphthylethynyl)azadipyrromethene

The homoleptic zinc(II) complex of [2,8-di(1-naphthylethynyl) 3,7-diphenyl 1,9-(4-hexylphenyl)azadipyrromethene (ZnL2) 2 ] is a promising non-planar non-fullerene acceptor for organic photovoltaic applications, but it has a relatively low electron mobility that may limit its performance. Here, we explored the fluorination of peripheral aryl groups to increase intermolecular cofacial π–π stacking interactions, which are desirable for electron transport. Here complexes with fluorine on the distal phenyls [Zn(1F-L2) 2 ], on the naphthyls [Zn(2F-L2) 2 ], and on both [Zn(3F-L2) 2 ] were synthesized and characterized. All three complexes had similar optical and electrochemical properties. The crystal packing structure of Zn(2F-L2) 2 and Zn(3F-L2) 2 revealed cofacial parallel-displaced π–π stacking between the fluorinated 1-naphthylethynyl groups. Such a cofacial orientation was not observed in Zn(L2) 2 crystals, suggesting that fluorination of the naphthyl groups promotes the cofacial π–π stacking orientation. The hole mobility increased from 1.0 × 10 –4 cm 2 V –1 s –1 for Zn(L2) 2 to 0.8–1.0 × 10 –3 cm 2 V –1 s –1 for the fluorinated complexes. Fluorination on the naphthyl groups increased the electron mobility from 4.2 × 10 –5 cm 2 V –1 s –1 for Zn(L2) 2 and Zn(1F-L2) 2 to 2.0 × 10 –4 cm 2 V –1 s –1 for Zn(2F-L2) 2 and Zn(3F-L2) 2 , consistent with cofacial π–π stacking being favorable for electron transport. The three complexes were tested in OPVs using regioregular poly(3-hexylthiophene) (P3HT) as the p-type material, and the best power conversion efficiencies were 5.2, 5.4, and 5.8% for Zn(2F-L2) 2 , Zn(1F-L2) 2 , and Zn(3F-L2) 2 , respectively, compared to 5.5% for Zn(L2) 2 . The fluorination combination found in Zn(3F-L2) 2 resulted in the best device performance. This study points to a viable strategy to increase the electron mobility and performance of non-planar zinc(II) complexes of azadipyrromethene.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Experimental design of a W-band corrugated waveguide for wakefield acceleration studies

Radiofrequency (RF) structures in the sub-terahertz (sub-THz) regime are of interest for applications in structure wakefield acceleration due to their compact size and potential for high gradients. Here, we present the design, fabrication, and experimental setup of a metallic corrugated waveguide at 110 GHz, optimized for the 42 MeV electron beam parameters at the Argonne Wakefield Accelerator (AWA). The emittance exchange (EEX) beamline at AWA was used to perform longitudinal bunch shaping for two cases: (1) a high decelerating gradient experienced by a single drive electron bunch about 250 μm long; (2) a high transformer ratio using a two-bunch train consisting of a triangularly shaped drive bunch followed by a long witness bunch to probe the wakefield. Preliminary experimental results are presented, and data analysis is ongoing.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Growth and characterization of high-quality Zr doped AlN epilayers

AlN stands out for its remarkable figures of merit for electronic and photonic devices, attributed to its ultrawide bandgap of ∼6.1 eV and an exceptionally high critical field of ∼15 MV/cm. More recently, zirconium (Zr) doped AlN (AlN:Zr) has also been identified as a promising material platform for the exploration of solid-state qubits for quantum information and technology, high performance piezoelectric acoustic wave resonators, and optically triggered ultrafast power switching devices facilitated by optically activating Zr related impurities. Despite the significant potential, the ability for producing AlN:Zr epitaxial structures has yet to be established. In this study, we have achieved AlN:Zr epilayers with a high Zr doping level [NZr] of up to 1020 cm−3 using industrial standard metal-organic chemical vapor deposition growth technique. High crystalline quality of AlN:Zr was confirmed by x-ray diffraction, revealing a narrow full width at half maximum of the (002) rocking curve at 216 arcsec for 1.8 μm thick epilayers deposited on sapphire at [NZr]=1020 cm−3. Zr doping was observed to slightly increase the c-lattice constant to 4.992 Å for AlN:Zr (at [NZr]=1020 cm−3) compared to 4.980 Å for undoped AlN. X-ray photoelectron spectroscopy measurement results verified the substitution of Zr at the Al site (ZrAl). The formation of (ZrAl–VN) complexes, which are predicted to possess all the desired properties required by quantum qubits, was confirmed through optical absorption studies. The realization of high-quality AlN:Zr epilayers significantly broadens the scope of technologically significant device applications for AlN.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Measurements of Gamow-Teller transitions from 59 Co via the 59 Co ⁢(𝑡, 3 He +𝛾) charge-exchange reaction and its application to the stellar electron-capture rates

Electron-capture reactions on iron-group nuclei play a crucial role in the late stages of massive star evolution. Since stellar evolution simulations depend on accurate electron-capture rates—which are highly sensitive to the detailed Gamow-Teller (GT) strength distributions—reliable theoretical models are essential. However, experimental data on GT strength distributions are scarce. High-resolution measurements are therefore vital for benchmarking and improving these theoretical calculations. To provide high-resolution data on Gamow-Teller strength distributions of iron-group nuclei and to compare these results with theoretical calculations within this mass region. Differential cross sections for the 59 Co ⁢(𝑡, 3 He)⁢ 59 Fe charge-exchange reaction at 115 MeV/u were measured using the S800 spectrometer. Furthermore, to resolve individual levels that are not distinguishable in the S800 particle singles data, coincident 𝛾 rays from the 59 Fe residual nucleus were detected by using the Gamma-Ray Energy Tracking In-beam Nuclear Array 𝛾-ray tracking array. Here, the Gamow-Teller transition strength distribution from the ground state of 59 Co to 59 Fe was extracted up to an excitation energy of 10 MeV. Additionally, transition strengths for several low-lying states were determined from coincident 𝛾-ray measurements. Electron-capture rates calculated using the present data indicate that these low-lying states contribute significantly to the overall rates in relevant stellar environments. The experimental results show reasonable agreement with theoretical predictions based on both shell-model and projected shell-model calculations. High-resolution data on Gamow-Teller strength distributions—particularly for individual low-lying states—are essential for accurately determining electron-capture rates in iron-group nuclei. Coincident 𝛾-ray measurements provide a powerful tool for obtaining such detailed information. While the present work demonstrates that shell-model calculations successfully reproduce the experimental results, such comparisons are scarce and more experimental data are desirable.

59 ≤ A ≤ 89↗