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At least 1,063 records · Page 59
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Development of high resolution imaging detectors for x ray astronomy

This final report summarizes our past activities and discusses the work performed over the period of 1 April 1990 through 1 April 1991 on x-ray optics, soft x-ray (0.1 - 10 KeV) imaging detectors, and hard x-ray (10 - 300 KeV) imaging detectors. If microchannel plates (MCPs) can be used to focus x-rays with a high efficiency and good angular resolution, they will revolutionize the field of x-ray optics. An x-ray image of a point source through an array of square MCP pores compared favorably with our ray tracing model for the MCP. Initial analysis of this image demonstrates the feasibility of MCPs for soft x-rays. Our work continues with optimizing the performance of our soft x-ray MCP imaging detectors. This work involves readout technology that should provide improved MCP readout devices (thin film crossed grid, curved, and resistive sheets), defect removal in MCPs, and photocathode optimization. In the area of hard x-ray detector development we have developed two different techniques for producing a CsI photocathode thickness of 10 to 100 microns, such that it is thick enough to absorb the high energy x-rays and still allow the photoelectrons to escape to the top MCP of a modified soft x-ray imaging detector. The methods involve vacuum depositing a thick film of CsI on a strong back, and producing a converter device that takes the place of the photocathode.

Murray, S. S.↗
DOE OSTI2021

Disordered TiO x –SiO x Nanocatalysts Using Bioinspired Synthetic Routes

Metal oxide nanomaterials have increasing significance and broad applications in catalysis, ranging from support materials to active catalysts. Here, we have demonstrated a facile synthetic strategy to create disordered, high-surface-area metal oxide nanomaterials using biomineralization-inspired methods. Using protamine as a protein template, a range of TiO x –SiO x nanomaterials were synthesized and implemented for catalytic CO 2 thermal reduction reactions. The modularity of synthetic options afforded via biomineralization enables increases in surface area, which are ideally suited for subsequent modification to regulate catalytic performance. All materials were thoroughly characterized using a suite of synchrotron scattering and spectroscopic methods. Through these techniques, we have demonstrated that protamine-induced biomineralization results in largely disordered materials with changes in the local atomic structure dependent on the applied synthetic conditions. Protamine removal with treatment under acidic conditions greatly increased material surface area while causing measurable changes in the structure as revealed by X-ray absorption spectroscopy. Upon subsequent hydrogenation, Ti- and Si-based defects were induced in the materials while the disordered nature of the material was still largely retained. Furthermore, we found that the incorporation of Si into TiO x was able to mitigate the known anatase to rutile phase change during the reaction while stabilizing the defect sites. The synthetic strategies described in this work are expected to be translatable to other metal oxide nanomaterial chemical structures, providing a means to control catalytic properties using benign synthetic strategies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Coalescence of GaP on V-Groove Si

In recent years, better understanding and control over the formation of crystalline defects during the direct epitaxy of III-V semiconductors on Si substrates via metal organic vapor phase epitaxy (MOVPE) has enabled large gains in III-V-on-Si solar cell efficiency, pointing to pathway to lower-cost, high-performance III-V solar cells. However, such results have only been achieved on costly chemo-mechanically-polished (CMP) Si wafers. The use of V-groove nanopatterned Si substrates has demonstrated similarly high-crystalline-quality III-V-on-Si epitaxy, but also can be combined with lower-cost polishing techniques. Although they offer a potential cost advantage, growth on V-groove substrates adds challenges not present for epitaxy on planar wafers (the III-V material must be coalesced into a thin film after an initial nucleation stage). MOVPE growth conditions that promote highly facet-selective lateral growth needed for coalescence are generally actively avoided for conventional thin fim growth, so growth conditions need to be re-developed for V-groove-based epitaxy. Additionally, coalescence add complexity to the dislocation dynamics related to lattice relaxation, so strategies used to keep threading dislocation density (TDD) low on planar substrates need to be re-tuned for V-grooves. We have studied the morphological evolution and dislocation dynamics of GaP grown on V-groove Si by MOVPE. Growth conditions of V/III=5,000 and Tg=800 degrees C were uniquely found to produce extremely smooth coalesced thin films, with an RMS roughness of 0.2 nm measured by AFM. Additionally, at this growth condition, we identified two regimes of growth determined by the width of the SiNx cap (a remnant of the nanopatterning process) at the top of the V-grooves. For narrow caps, the GaP coalesces into a thin film, and for wide caps, the GaP evolves into {1 1 1}-faceted diamonds that do not coalesce. We suggest the influence of Si from the sidewalls of the V-grooves on the surface reconstruction of the GaP as the mechanism for this effect, with reflection difference spectroscopy (RDS) and Si doping experiments supporting this theory. In addition to morphology, the dislocation dynamics of the system were studied with electron channeling contrast imaging (ECCI) and transmission electron microscopy (TEM). The TDD of the coalesced GaP films was found to be 5 x 10^7 cm^-2 after coalescence via ECCI, a level still too high for high-quality solar cells. However, misfit dislocations crossing multiple grooves greater than 20 micrometers long were observed in ECCI, suggesting that the V-grooves do not block dislocation glide. TEM prior to and after coalescence was used to distinguish between dislocation creation driven by growth conditions and coalescence. Finally, strategies to reduce the dislocation density to levels acceptable for solar cells will be discussed.

GaP↗
NASA NTRS1994

Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

Weinberg, I.↗
DOE OSTI2020

Scanning Kelvin Probe Microscopy Reveals That Ion Motion Varies with Dimensionality in 2D Halide Perovskites

We study ion migration in 2D lead halide perovskites of varying dimensionality using scanning Kelvin probe microscopy (SKPM). We perform potentiometry on micrometer-scale lateral junctions in the absence of injected charge, and we compare how ion motion varies between prototypical two-dimensional n-butylammonium lead iodide perovskites (BA 2 PbI 4 , n = 1), and methylammonium-incorporated quasi-2D perovskites (BA 2 MA 3 Pb 4 I 13 , ~ < n > = 4) under the effects of illumination and temperature. We attribute the observed slow dynamics to relaxation of the bias-induced ionic charge distributions at different temperatures, and we extract the activation energies associated with the ionic motion in each case. Lastly, we propose an explanation for these phenomena by hypothesizing that ion motion in purely-2D BA 2 PbI 4 perovskite films is dominated by paired halide and halide vacancy, whereas for quasi-2D BA 2 MA 3 Pb 4 I 13 perovskites, the ion motion is a combination of both halide and methylammonium (vacancy) migration. These data show that dimensionality in these systems plays a critical role in ion dynamics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Integrated reactor architecture of conductive network and catalytic nodes to accelerate polysulfide conversion for durable and high-loading Li-S batteries

The development of carbon-based heterogeneous framework host with synergistic catalytic and conductive effects for sulfur cathode is a promising strategy to realize high performance lithium sulfur batteries (LSBs). Here, an integrated reactor architecture with defective carbon nodes (IRA-DC) is designed for serving as high-loading (92.4 wt%) sulfur host. The hierarchical porous IRA-DC consists of untangled conductive carbon nanotube network and Co/N co-doped catalytic nodes with high dispersity. Therein the optimization of electric field distribution and homogenization of adsorption-catalysis sites offer the multi-electron conversion reaction of polysulfides with excellent kinetics and stability. The resultant IRA-DC/S cathode enables a high areal capacity of 8.86 mAh cm -2 under ultra-high sulfur loading (13.1 mg cm -2 ) and lean electrolyte (8 μL mg sulfur -1 ). It also displays a long-term cycling performance (1200 cycles at 1 C) and ultrahigh rate performance up to 20 C (with a capacity of 473.6 mAh g -1 ). In conclusion, this work provides an electrode building strategy by optimizing the environments of heterogeneous electrocatalysis and micro electric field to activate the polysulfide conversion efficiency and utilization of high-loading sulfur in monolithic sulfur-carbon cathodes.

25 ENERGY STORAGE↗
NASA NTRS2021

Stress-Activated Electric Currents in Icy Planetary Bodies: H2O2-Doped H2O Ices

Planetary satellites such as the Jovian moon Europa and several Kuiper Belt objects (including Pluto) have surfaces consisting largely of H2O ice, which is brittle and behaves as a rock at the low temperatures that prevail in the outer Solar System. Several of those ice-crusted bodies show evidence of tectonic activity indicating high levels of stress. This paper reports on laboratory experiments with pure H2O ice and H2O2–doped H2O ices with H2O2 concentration levels comparable to those in the ices of Europa. Elongated rectangular ice blocks at T = −81 °C [192 K] were stressed at one end to test whether electric currents are generated and capable of flowing down the stress gradient. Pure H2O ice was found to not produce currents above the 10−10 A background level except for occasional transients in the 10−9–10−8 A range during fracture or rapid plastic deformation due to electrons, e’. By contrast, stressing H2O2-doped H2O ices consistently produced electric currents in the 10−7–10−5 A range, due to holes, h•, propagating from the stressed end to the unstressed end. The h• charge carriers are generated by the break-up of peroxy bonds of H2O2 molecules, leading to O−, equivalent to defect electrons or holes h• in the O2− matrix.

Water ice↗
DOE OSTI2025

Uncovering multiscale structure-property correlations via active learning in scanning tunneling microscopy

Atomic arrangements and local sub-structures fundamentally influence emergent material functionalities. These structures are conventionally probed using spatially resolved studies and the property correlations are deciphered by a researcher based on sequential explorations, thereby limiting the efficiency and scope. Here we demonstrate a multi-scale Bayesian deep-learning based framework that automatically correlates material structure with its electronic properties using scanning tunneling microscopy (STM) measurements in real-time. Its predictions are used to autonomously direct exploration toward regions of the sample that optimize a given material property. This method is deployed on a low-temperature ultra-high vacuum STM to understand the structure-property relationship in a europium-based semimetal, EuZn 2 As 2 , a promising candidate relevant to magnetism-driven topological phenomena. The framework employs a sparse-sampling approach to efficiently construct the scalar-property space using minimal measurements, about 1–10% of the data required in standard hyperspectral methods. Moreover, we formulate the problem hierarchically across length scales, implementing autonomous workflow to locate mesoscopic and atomic structures that correspond to a target material property. This framework offers the choice to design scalar-property from the spectroscopic data to steer sample exploration. Our findings reveal correlations of the electronic properties unique to surface terminations, local defect density, and point defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1988

Development program for 1.93-micron lasers

For the first time lasers operating at 1.93 microns were demonstrated. The lasers were fabricated by Vapor Phase Epitaxial (VPE) growth techniques currently used for the fabrication of high power lasers at 1.3 microns. The structure of these laser diodes consisted of compositionally graded, sulfur-doped InAsP, grown on an InP substrate; a constant-composition n+InAs(0.27)P(0.73) layer, which is the first cladding layer; an In(0.66)Ga(0.34)As layer, which is the active region, and a second InAs(0.27)P(0.73) layer. The devices were oxide-stripe DH lasers (gain-guided only). The best devices had 80 K lasing thresholds in the range of from 80 to 150 mA, and T sub o (below 220 K) in the range of 60 to 90 K. The highest observed temperature of oscillation was 15.5 C. The highest observed power output at 80 K was in the range of 3 to 5 mW. The calculated delta I/delta T was 4.4 A/K. As a part of the materials development, PIN homojunction detectors having the band edge near 1.93 were also fabricated. The best devices (100 micron diameter, mesa structure) exhibited room temperature dark currents in the range of from 20 to 50 nA and had QE at 1.93 microns in the range of 35 to 40 percent. In addition to the device results, the InGaAs-InAsP materials system was extensively investigated and low defect density layers can now be grown allowing for significant device performance improvement.

Longeway, P.↗
DOE OSTI2020

Electronic structure and small-hole polarons in YTiO 3

As a prototypical Mott insulator with ferromagnetic ordering, YTiO 3 (YTO) is of great interest in the study of strong electron correlation effects and orbital ordering. Here we report the first molecular beam epitaxy (MBE) growth of YTO films, combined with theoretical and experimental characterizations of the electronic structure and charge transport properties. The obstacles of YTO MBE growth are discussed and potential routes to overcome them are proposed. DC transport and Seebeck measurements on thin films and bulk single crystals identify p-type Arrhenius transport behavior with an activation energy of ~0.17 eV in thin films, consistent with the energy barrier for small hole polaron migration from hybrid density functional theory calculations. Hard x-ray photoelectron spectroscopy measurements show the lower Hubbard band at 1.1 eV below the Fermi level, whereas a Mott-Hubbard band gap of ~1.5 eV is determined from photoluminescence measurements. These findings provide critical insight into the electronic band structure of YTO and related materials.

36 MATERIALS SCIENCE↗
NASA NTRSDate not supplied

BioSentinel ISS mission: Analysis of ISS Flight Data and Lessons Learned

As we prepare for a future with a human presence on the Moon, Mars, and beyond, the need for countermeasures to protect astronauts against deep space radiation is ever pressing. However, our understanding of how life operates in the space environment, especially past the protection of the Van Allen radiation belts, is critically limited. BioSentinel, a biological CubeSat, aims to further investigate the effects of deep space ionizing radiation, utilizing the budding yeast Saccharomyces cerevisiae to examine the cell’s DNA damage response. The yeast wild type and a rad51Δ mutant strain defective for DNA damage repair will be monitored via the redox dye alamarBlue and a 3-color LED detection system. Selected as a secondary payload on Artemis I, BioSentinel will be the first deep space biological experiment in a half-century and the first biological CubeSat or free-flyer to ever reach a heliocentric orbit. Notably, BioSentinel is the only biological CubeSat to include an ISS control study in addition to a ground control. Comparisons between the ground, ISS, and free-flyer experiments will allow us to isolate the effects of deep space radiation from those of microgravity. The ISS study also provides a unique platform to conduct important technological and biological testing of BioSentinel’s instrumentation in preparation for the deep space mission. In this work, we use a series of data processing tools and scripts to analyze ISS flight data as well as samples exposed to simulated space radiation at Brookhaven National Laboratory, specifically looking at cell growth, metabolic activity, and duplication rates based on optical absorbance and alamarBlue kinetics. These analyses provide a crucial set of controls and a framework for analyzing and interpreting future data sets from the free-flyer, helping us gain further insight into the health risks astronauts will face when exposed to deep space radiation.

Kylie Lauren Lo-Wen Akiyama↗
DOE OSTI2020

CO Oxidation Mechanisms on CoO x -Pt Thin Films

The reaction of CO and O 2 with submonolayer and multilayer CoO x films on Pt(111), to produce CO 2 , was investigated at room temperature in the mTorr pressure regime. Here, using operando ambient pressure X-ray photoelectron spectroscopy and high pressure scanning tunneling microscopy, as well as density functional theory calculations, we found that the presence of oxygen vacancies in partially oxidized CoO x films significantly enhances the CO oxidation activity to form CO 2 upon exposure to mTorr pressures of CO at room temperature. In contrast, CoO films without O-vacancies are much less active for CO 2 formation at RT, and CO only adsorbed in the form of carbonate species that are stable up to 260 °C. On submonolayer CoO x islands, the carbonates form preferentially at island edges, deactivating the edge sites for CO 2 formation, even while the reaction proceeds inside the islands. These results provide a detailed understanding of CO oxidation pathways on systems where noble metals such as Pt interact with reducible oxides.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2005

The Application of Infrared Thermographic Inspection Techniques to the Space Shuttle Thermal Protection System

The Nondestructive Evaluation Sciences Branch at NASA s Langley Research Center has been actively involved in the development of thermographic inspection techniques for more than 15 years. Since the Space Shuttle Columbia accident, NASA has focused on the improvement of advanced NDE techniques for the Reinforced Carbon-Carbon (RCC) panels that comprise the orbiter s wing leading edge. Various nondestructive inspection techniques have been used in the examination of the RCC, but thermography has emerged as an effective inspection alternative to more traditional methods. Thermography is a non-contact inspection method as compared to ultrasonic techniques which typically require the use of a coupling medium between the transducer and material. Like radiographic techniques, thermography can be used to inspect large areas, but has the advantage of minimal safety concerns and the ability for single-sided measurements. Principal Component Analysis (PCA) has been shown effective for reducing thermographic NDE data. A typical implementation of PCA is when the eigenvectors are generated from the data set being analyzed. Although it is a powerful tool for enhancing the visibility of defects in thermal data, PCA can be computationally intense and time consuming when applied to the large data sets typical in thermography. Additionally, PCA can experience problems when very large defects are present (defects that dominate the field-of-view), since the calculation of the eigenvectors is now governed by the presence of the defect, not the "good" material. To increase the processing speed and to minimize the negative effects of large defects, an alternative method of PCA is being pursued where a fixed set of eigenvectors, generated from an analytic model of the thermal response of the material under examination, is used to process the thermal data from the RCC materials. Details of a one-dimensional analytic model and a two-dimensional finite-element model will be presented. An overview of the PCA process as well as a quantitative signal-to-noise comparison of the results of performing both embodiments of PCA on thermographic data from various RCC specimens will be shown. Finally, a number of different applications of this technology to various RCC components will be presented.

Cramer, K. E.↗
NASA NTRS2006

The Application of Principal Component Analysis Using Fixed Eigenvectors to the Infrared Thermographic Inspection of the Space Shuttle Thermal Protection System

The Nondestructive Evaluation Sciences Branch at NASA s Langley Research Center has been actively involved in the development of thermographic inspection techniques for more than 15 years. Since the Space Shuttle Columbia accident, NASA has focused on the improvement of advanced NDE techniques for the Reinforced Carbon-Carbon (RCC) panels that comprise the orbiter s wing leading edge. Various nondestructive inspection techniques have been used in the examination of the RCC, but thermography has emerged as an effective inspection alternative to more traditional methods. Thermography is a non-contact inspection method as compared to ultrasonic techniques which typically require the use of a coupling medium between the transducer and material. Like radiographic techniques, thermography can be used to inspect large areas, but has the advantage of minimal safety concerns and the ability for single-sided measurements. Principal Component Analysis (PCA) has been shown effective for reducing thermographic NDE data. A typical implementation of PCA is when the eigenvectors are generated from the data set being analyzed. Although it is a powerful tool for enhancing the visibility of defects in thermal data, PCA can be computationally intense and time consuming when applied to the large data sets typical in thermography. Additionally, PCA can experience problems when very large defects are present (defects that dominate the field-of-view), since the calculation of the eigenvectors is now governed by the presence of the defect, not the good material. To increase the processing speed and to minimize the negative effects of large defects, an alternative method of PCA is being pursued when a fixed set of eigenvectors is used to process the thermal data from the RCC materials. These eigen vectors can be generated either from an analytic model of the thermal response of the material under examination, or from a large cross section of experimental data. This paper will provide the details of the analytic model; an overview of the PCA process; as well as a quantitative signal-to-noise comparison of the results of performing both embodiments of PCA on thermographic data from various RCC specimens. Details of a system that has been developed to allow insitu inspection of a majority of shuttle RCC components will be presented along with the acceptance test results for this system. Additionally, the results of applying this technology to the Space Shuttle Discovery after its return from flight will be presented.

Cramer, K. Elliott↗
DOE OSTI2024

ThermoPore: Predicting part porosity based on thermal images using deep learning

Part qualification is often a critical and labor-intensive process in additive manufacturing, particularly in the detection of defects such as porosity, which stands to benefit significantly from advancements in machine learning. We present a deep learning approach for quantifying and localizing ex-situ porosity within Laser Powder Bed Fusion fabricated samples utilizing in-situ thermal image monitoring data. Our goal is to build the real time porosity map of parts based on thermal images acquired during the build. The quantification task builds upon the established Convolutional Neural Network model architecture to predict pore count and the localization task leverages the spatial and temporal attention mechanisms of the novel Video Vision Transformer model to indicate areas of expected porosity. Our model for porosity quantification achieved a R 2 score of 0.57 and our model for porosity localization produced an average Intersection over Union (IoU) score of 0.32 and a maximum of 1.0. This work is setting the foundations of part porosity “Digital Twins” based on additive manufacturing monitoring data and can be applied downstream to reduce time-intensive post-inspection and testing activities during part qualification and certification. In addition, we seek to accelerate the acquisition of crucial insights normally only available through ex-situ part evaluation by means of machine learning analysis of in-situ process monitoring data.

Deep learning↗
DOE OSTI2025

Tracking oxygen vacancy migration in memristor devices using operando hard X-ray photoelectron spectroscopy

Fabrication of ultrathin (sub-2 nm) oxide semiconductor memristors poses the fundamental challenge of achieving oxide growth with atomic precision in terms of electronic structure and defect formation. Recently, ultrathin memristors consisting of bilayers of mixed Al 2 O 3 and MgO atomic layers were fabricated using an in vacuo atomic layer deposition process. This approach offers a unique platform for precise atomic control of oxygen vacancies in the device in which the vacancies are introduced by placing MgO atomic layers between pristine Al 2 O 3 layers. In this work, we present a systematic operando Hard X-ray PhotoElectron Spectroscopy (HAXPES) study of the switching of such memristors, combined with complementary current-voltage and capacitance-voltage (C-V) measurements. We used a memristor stack of Al 2 O 3 /MgO atomic layers, with the MgO-containing oxide deposited on the bottom Al metal electrode and a pure Al 2 O 3 layer below the top Pd electrode. HAXPES analysis shows a substantial change in the chemical shift of the Aluminum oxide when switching between the ”OFF” and ”ON” states indicative of a redistribution of oxygen vacancies in the device active layer. Interestingly, subsequent switching to the OFF state shows hysteretic behavior indicating the retention of some oxygen vacancies in the top Al 2 O 3 layer. This vacancy retention can be correlated with the stochastic behavior of the switching voltage observed in these devices. C–V measurements show a clear frequency-dependent response in the OFF state, consistent with enhanced polarization and vacancy trapping at low frequencies.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Atomically Dispersed Copper Sites in a Metal–Organic Framework for Reduction of Nitrogen Dioxide

Metal-organic framework (MOF) materials provide an excellent platform to fabricate single-atom catalysts due to their structural diversity, intrinsic porosity, and designable functionality. However, the unambiguous identification of atomically dispersed metal sites and the elucidation of their role in catalysis are challenging due to limited methods of characterization and lack of direct structural information. Here, we report a comprehensive investigation of the structure and the role of atomically dispersed copper sites in UiO-66 for the catalytic reduction of NO 2 at ambient temperature. The atomic dispersion of copper sites on UiO-66 is confirmed by high-angle annular dark-field scanning transmission electron microscopy, electron paramagnetic resonance spectroscopy, and inelastic neutron scattering, and their location is identified by neutron powder diffraction and solid-state nuclear magnetic resonance spectroscopy. The Cu/UiO-66 catalyst exhibits superior catalytic performance for the reduction of NO 2 at 25 °C without the use of reductants. A selectivity of 88% for the formation of N2 at a 97% conversion of NO 2 with a lifetime of >50 h and an unprecedented turnover frequency of 6.1 h-1 is achieved under nonthermal plasma activation. In situ and operando infrared, solid-state NMR, and EPR spectroscopy reveal the critical role of copper sites in the adsorption and activation of NO 2 molecules, with the formation of {Cu(I)···NO} and {Cu···NO 2 } adducts promoting the conversion of NO 2 to N 2 . This study will inspire the further design and study of new efficient single-atom catalysts for NO 2 abatement via detailed unravelling of their role in catalysis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1996

Chip-on-Board Technology 1996 Year-end Report (Design, Manufacturing, and Reliability Study)

The major impetus for flight qualifying Chip-On-Board (COB) packaging technology is the shift in emphasis for space missions to smaller, better, and cheaper spacecraft and satellites resulting from the NASA New Millenium initiative and similar requirements in DoD-sponsored programs. The most important benefit that can potentially be derived from miniaturizing spacecraft and satellites is the significant cost saving realizable if a smaller launch vehicle may be employed. Besides the program cost saving, there are several other advantages to building COB-based space hardware. First, once a well-controlled process is established, COB can be low cost compared to standard Multi-Chip Module (MCM) technology. This cost competitiveness is regarded as a result of the generally greater availability and lower cost of Known Good Die (KGD). Coupled with the elimination of the first level of packaging (chip package), compact, high-density circuit boards can be realized with Printed Wiring Boards (PWB) that can now be made with ever-decreasing feature size in line width and via hole. Since the COB packaging technique in this study is based mainly on populating bare dice on a suitable multi-layer laminate substrate which is not hermetically sealed, die coating for protection from the environment is required. In recent years, significant improvements have been made in die coating materials which further enhance the appeal of COB. Hysol epoxies, silicone, parylene and silicon nitride are desirable because of their compatible Thermal Coefficient of Expansion (TCE) and good moisture resistant capability. These die coating materials have all been used in the space and other industries with varying degrees of success. COB technology, specifically siliconnitride coated hardware, has been flown by Lockheed on the Polar satellite. In addition, DARPA has invested a substantial amount of resources on MCM and COB-related activities recently. With COB on the verge of becoming a dominant player in DoD programs, DARPA is increasing its support of the availability of KGDs which will help decrease their cost. Aside from the various major developments and trends in the space and defense industries that are favorable to the acceptance and widespread use of'COB packaging technology, implementing COB can be appealing in other aspects. Since the interconnection interface is usually the weak link in a system, the overall circuit or system reliability may actually be improved because of the elimination of a level of interconnect/packaging at the chip. With COB, mixing packaging technologies is possible. Because some devices are only available in commercial plastic packages, populating a multi-layer laminate substrate with both bare dice and plastic-package parts is inevitable. Another attractive feature of COB is that re-workability is possible if die coating is applied only on the die top. This method allows local replacement of individual dice that were found to be defective instead of replacing an entire board. In terms of thermal management, unpackaged devices offer a shorter thermal resistance path than their packaged counterparts thereby improving thermal sinking and heat removal from the parts.

Le, Binh Q.↗