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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,063 records · Page 59
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Inductively-Activated Short-Interval Timer

Timing circuit in pneumatically launched projectile triggers explosive charge in projectile at specified delay after launch. Both power and control signals coupled inductively to timer from stationary launcher circuitry. Eliminates need for direct electrical contacts, which are unreliable and generate sparks that trigger explosive accidentally. Inductive coupling also provides higher reliability in field operation than contacts. Concept useful in such other safety-related applications as remotely or automatically controlling flow of bottled flammable gas.

Wiker, Gordon A.↗
NASA NTRS1984

A comparison of IMPATT oscillator power and frequency above 100 GHz with results derived from theoretical models

This investigation is concerned with a comparison of measured 117-GHz IMPATT oscillator frequency and output power with results derived from theoretical circuit models. It is pointed out that previous millimeter-wave oscillator models are unsuitable for studying circuit behavior, such as oscillator tuning as a function of waveguide short position or other circuit parameters. In the current study, oscillator circuit modeling techniques, successfully applied at X-band, are applied for the first time to a millimeter-wave IMPATT oscillator circuit. Attention is given to an oscillator circuit description, an IMPATT diode circuit model, a circuit model, and an oscillator analysis.

Bates, B. D.↗
DOE OSTI2024

Scaling whole-chip QAOA for higher-order ising spin glass models on heavy-hex graphs

Abstract We show that the quantum approximate optimization algorithm (QAOA) for higher-order, random coefficient, heavy-hex compatible spin glass Ising models has strong parameter concentration across problem sizes from 16 up to 127 qubits for p = 1 up to p = 5, which allows for computationally efficient parameter transfer of QAOA angles. Matrix product state (MPS) simulation is used to compute noise-free QAOA performance. Hardware-compatible short-depth QAOA circuits are executed on ensembles of 100 higher-order Ising models on noisy IBM quantum superconducting processors with 16, 27, and 127 qubits using QAOA angles learned from a single 16-qubit instance using the JuliQAOA tool. We show that the best quantum processors find lower energy solutions up to p = 2 or p = 3, and find mean energies that are about a factor of two off from the noise-free distribution. We show that p = 1 QAOA energy landscapes remain very similar as the problem size increases using NISQ hardware gridsearches with up to a 414 qubit processor.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Hybrid Quantum-Classical Eigensolver without Variation or Parametric Gates

The use of near-term quantum devices that lack quantum error correction, for addressing quantum chemistry and physics problems, requires hybrid quantum-classical algorithms and techniques. Here, we present a process for obtaining the eigenenergy spectrum of electronic quantum systems. This is achieved by projecting the Hamiltonian of a quantum system onto a limited effective Hilbert space specified by a set of computational bases. From this projection, an effective Hamiltonian is obtained. Furthermore, a process for preparing short depth quantum circuits to measure the corresponding diagonal and off-diagonal terms of the effective Hamiltonian is given, whereby quantum entanglement and ancilla qubits are used. The effective Hamiltonian is then diagonalized on a classical computer using numerical algorithms to obtain the eigenvalues. The use case of this approach is demonstrated for ground state and excited states of BeH2 and LiH molecules, and the density of states, which agrees well with exact solutions. Additionally, hardware demonstration is presented using IBM quantum devices for H2 molecule.

Jouzdani, Pejman (ORCID:0000000256470381)↗
NASA NTRS1978

Some failure modes and analysis techniques for terrestrial solar cell modules

Analysis data are presented on failed/defective silicon solar cell modules of various types and produced by different manufacturers. The failure mode (e.g., internal short and open circuits, output power degradation, isolation resistance degradation, etc.) are discussed in detail and in many cases related to the type of technology used in the manufacture of the modules; wherever applicable, appropriate corrective actions are recommended. Consideration is also given to some failure analysis techniques that are applicable to such modules, including X-ray radiography, capacitance measurement, cell shunt resistance measurement by the shadowing technique, steady-state illumination test station for module performance illumination, laser scanning techniques, and the SEM.

Shumka, A.↗
NASA NTRS1984

Hot-spot investigations of utility scale panel configurations

The causes of array faults and efforts to mitigate their effects are examined. Research is concentrated on the panel for the 900 kw second phase of the Sacramento Municipal Utility District (SMUD) project. The panel is designed for hot spot tolerance without comprising efficiency under normal operating conditions. Series/paralleling internal to each module improves tolerance in the power quadrant to cell short or open circuits. Analtyical methods are developed for predicting worst case shade patterns and calculating the resultant cell temperature. Experiments conducted on a prototype panel support the analytical calculations.

Arnett, J. C.↗
NASA NTRS1990

Estimation of minority carrier diffusion lengths in InP/GaAs solar cells

Minority carrier diffusion length is one of the most important parameters affecting the solar cell performance. An attempt is made to estimate the minority carrier diffusion lengths is the emitter and base of InP/GaAs heteroepitaxial solar cells. The PC-1D computer model was used to simulate the experimental cell results measured at NASA Lewis under AMO (air mass zero) spectrum at 25 C. A 16 nm hole diffusion length in the emitter and a 0.42 micron electron diffusion length in the base gave very good agreement with the I-V curve. The effect of varying minority carrier diffusion lengths on cell short current, open circuit voltage, and efficiency was studied. It is also observed that the front surface recombination velocity has very little influence on the cell performance. The poor output of heteroepitaxial cells is caused primarily by the large number of dislocations generated at the interfaces that propagate through the bulk indium phosphide layers. Cell efficiency as a function of dislocation density was calculated and the effect of improved emitter bulk properties on cell efficiency is presented. It is found that cells with over 16 percent efficiencies should be possible, provided the dislocation density is below 10(exp 6)/sq cm.

Jain, R. K.↗
NASA NTRS1992

Slot antenna SIS mixers for submillimeter wavelengths

We are developing improved versions of a slot antenna SIS mixer which we have previously described. The initial work demonstrated a double sideband noise temperature of 420 K for a 500 GHz quasi-optical SIS mixer employing a twin-slot antenna on a quartz dielectric substrate. A quartz hyperhemispherical lens is used to focus the incoming radiation onto the twin-slot antenna. The advantages of a twin-slot antenna include a low impedance (35 omega) and a clean, symmetric beam pattern into the dielectric with a 70 percent efficiency. In our original mixer, the radiation was coupled from the two slot antennas onto superconducting microstrip lines which fed the SIS junction. By performing an impedance transformation using tapered lines and by feeding the radiation from the two slots to the junction in parallel, the effective (real) impedance seen by the junction was reduced to just 4 omega. This very low impedance allowed a junction area of 2.3 sq micron to be used at 500 GHz, which was manufactured using optical lithography. However, no attempt was made to tune out the junction capacitance. We estimate that this capacitance reduces the impedance coupling efficiency to eta(sub Z) approx. equals 0.23, for our junction with omega R(sub N) C = 5.3 at 500 GHz. The recent development of techniques using electron-beam lithography to manufacture junctions with very small areas (approx. equals 0.1 sq microns) now allows considerably more flexibility in the design of SIS mixer circuits. We have redesigned the slot-antenna mixer to take advantage of this possibility. In particular, we have included a novel circuit which allows the junction capacitance to be tune out over a broad bandwidth. For instance, mixers designed for 800 GHz using NbN/MgO/NbN junctions with realistic parameters achieve a 3 dB impedance bandwidth of nearly 400 GHz. Furthermore, our circuit uses only short lengths of microstrip and should be less sensitive to RF losses than other designs. The improved impedance match should give a large reduction in noise temperature as compared to our previous mixer. The new devices are currently under fabrication. Further details of the design and any available experimental results are discussed.

Zmuidzinas, Jonas↗
NASA NTRS2004

Improved Method of Locating Defects in Wiring Insulation

An improved method of locating small breaches in insulation on electrical wires combines aspects of the prior dielectric withstand voltage (DWV) and time-domain reflectometry (TDR) methods. The method was invented to satisfy a need for reliably and quickly locating insulation defects in spacecraft, aircraft, ships, and other complex systems that contain large amounts of wiring, much of it enclosed in structures that make it difficult to inspect. In the DWV method, one applies a predetermined potential (usually 1.5 kV DC) to the wiring and notes whether the voltage causes any arcing between the wiring and ground. The DWV method does not provide an indication of the location of the defect (unless, in an exceptional case, the arc happens to be visible). In addition, if there is no electrically conductive component at ground potential within about 0.010 in. (approximately equal to 0.254 mm) of the wire at the location of an insulation defect, then the DWV method does not provide an indication of the defect. Moreover, one does not have the option to raise the potential in an effort to increase the detectability of such a defect because doing so can harm previously undamaged insulation. In the TDR method as practiced heretofore, one applies a pulse of electricity having an amplitude of less than 25 V to a wire and measures the round-trip travel time for the reflection of the pulse from a defect. The distance along the wire from the point of application of the pulse to the defect is then calculated as the product of half the round-trip travel time and the characteristic speed of a propagation of an electromagnetic signal in the wire. While the TDR method as practiced heretofore can be used to locate a short or open circuit, it does not ordinarily enable one to locate a small breach in insulation because the pulse voltage is too low to cause arcing and thus too low to induce an impedance discontinuity large enough to generate a measurable reflection. The present improved method overcomes the weaknesses of both the prior DWV and the prior TDR method.

Greulich, Owen R.↗
NASA NTRS1984

Process Research on Polycrystalline Silicon Material (PROPSM)

Results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Very small grain or short minority-carrier diffusion length silicon was used. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is sometimes 20 to 40 mV less. The goal was to minimize variations in open-circuit voltage and fill-factor caused by defects by passivating these defects using a hydrogenation process. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystaline silicon solar cells.

Culik, J. S.↗
NASA NTRS1985

Protective Cover for IC Packages

Aluminized plastic protects integrated circuits from static discharge. Snap-on cover shorts leads of integrated-circuit flatpack to prevent damage from electrostatic discharges during transport, installation, or other handling before final testing. Cover removed only during lead bending and testing.

Borden, T. J.↗
DOE OSTI2023

Numerical Circuit Synthesis and Compilation for Multi-State Preparation

Near-term quantum computers have significant error rates and short coherence times, so compilation of circuits to be as short as possible is essential. Two types of compilation problems are typically considered: circuits to prepare a given state from a fixed input state, called 'state preparation'; and circuits to implement a given unitary operation, for example by 'unitary synthesis'. In this paper we solve a more general problem: the transformation of a set of m states to another set of m states, which we call 'multi-state preparation'. State preparation and unitary synthesis are special cases; for state preparation, m=1, while for unitary synthesis, m is the dimension of the full Hilbert space. We generate and optimize circuits for multi-state preparation numerically. In cases where a top-down approach based on matrix decompositions is also possible, our method finds circuits with substantially (up to 40 %) fewer two-qubit gates. We discuss possible applications, including efficient preparation of macroscopic superposition ('cat') states and synthesis of quantum channels.

Szasz, Aaron↗
NASA NTRS2004

Options Studied for Managing Space Station Solar Array Electrical Hazards for Sequential Shunt Unit Replacement

The U.S. solar array strings on the International Space Station are connected to a sequential shunt unit (SSU). The job of the SSU is to shunt, or short, the excess current from the solar array, such that just enough current is provided downstream to maintain the 160-V bus voltage while meeting the power load demand and recharging the batteries. Should an SSU fail on-orbit, it would be removed and replaced with the on-orbit spare during an astronaut space walk or extravehicular activity (EVA) (see the photograph). However, removing an SSU during an orbit Sun period with input solar array power connectors fully energized could result in substantial hardware damage and/or safety risk to the EVA astronaut. The open-circuit voltage of cold solar-array strings can exceed 320 V, and warm solar-array strings could feed a short circuit with a total current level exceeding 240 A.

Delleur, Ann M.↗
NASA NTRS2007

Multiloop Rapid-Rise/Rapid Fall High-Voltage Power Supply

A proposed multiloop power supply would generate a potential as high as 1.25 kV with rise and fall times <100 s. This power supply would, moreover, be programmable to generate output potentials from 20 to 1,250 V and would be capable of supplying a current of at least 300 A at 1,250 V. This power supply is intended to be a means of electronic shuttering of a microchannel plate that would be used to intensify the output of a charge-coupled-device imager to obtain exposure times as short as 1 ms. The basic design of this power supply could also be adapted to other applications in which high voltages and high slew rates are needed. At the time of reporting the information for this article, there was no commercially available power supply capable of satisfying the stated combination of voltage, rise-time, and fall-time requirements. The power supply would include a preregulator that would be used to program a voltage 1/30 of the desired output voltage. By means of a circuit that would include a pulse-width modulator (PWM), two voltage doublers, and a transformer having two primary and two secondary windings, the preregulator output voltage would be amplified by a factor of 30. A resistor would limit the current by controlling a drive voltage applied to field-effect transistors (FETs) during turn-on of the PWM. Two feedback loops would be used to regulate the high output voltage. A pulse transformer would be used to turn on four FETs to short-circuit output capacitors when the outputs of the PWM were disabled. Application of a 0-to-5-V square to a PWM shut-down pin would cause a 20-to-1,250-V square wave to appear at the output.

Bearden, Douglas↗
NASA NTRS1991

Sliding backshorts for planar circuits

An adjustable planar imbedding circuit based on coplanar transmission lines is presented to deal with the impedance mismatch associated with the use of the Superconductor-Insulator-Superconductor tunnel junction. The planar embedding circuit is developed with movable noncontacting shorting elements that consist of thin metallic plates with optimized arrangements of rectangular holes. The rectangular holes are placed along the insulated metallic transmission line to provide a periodic variation of the line impedance. A large reflection coefficient is demonstrated with a scale model of the sliding backshort, and values of more than -0.5 dB are reported. The shorting elements are incorporated into a low-frequency tuning circuit to test the practical tuning ranges. The backshort can be used to fashion tuning stubs with variable post-fabrication electrical lengths which relaxes the design constraints of planar integrated circuits.

Lubecke, Victor M.↗
DOE OSTI2024

Quantum computer-enabled receivers for optical communication

Abstract Optical communication is the standard for high-bandwidth information transfer in today’s digital age. The increasing demand for bandwidth has led to the maturation of coherent transceivers that use phase- and amplitude-modulated optical signals to encode more bits of information per transmitted pulse. Such encoding schemes achieve higher information density, but also require more complicated receivers to discriminate the signaling states. In fact, achieving the ultimate limit of optical communication capacity, especially in the low light regime, requires coherent joint detection of multiple pulses. Despite their superiority, such joint detection receivers are not in widespread use because of the difficulty of constructing them in the optical domain. In this work we describe how optomechanical transduction of phase information from coherent optical pulses to superconducting qubit states followed by the execution of trained short-depth variational quantum circuits can perform joint detection of communication codewords with error probabilities that surpass all classical, individual pulse detection receivers. Importantly, we utilize a model of optomechanical transduction that captures non-idealities such as thermal noise and loss in order to understand the transduction performance necessary to achieve a quantum advantage with such a scheme. We also execute the trained variational circuits on an IBM-Q device with the modeled transduced states as input to demonstrate that a quantum advantage is possible even with current levels of quantum computing hardware noise.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

High Performing and Durable Pyrophosphate Based Composite Membranes for Intermediate Temperature Fuel Cells [Slides]

Objective: Develop a novel proton conducting electrolyte operating at >200°C with conductivity σ ≥ 100 mScm –1 and RH < 1%. Fabrication of membranes of less than 40μm thickness while retaining high conductivity will result in ASR <0.04 Ωcm 2 . Evaluate membrane durability in terms of crossover, shorting resistance, and open circuit voltage, as well as against temperature cycling. Relevance: Operating FCs in the intermediate temperature range has the potential to greatly reduce cost and simplify water and thermal management. This effort requires novel materials and approaches to meet DOE membrane performance and durability targets. MPP/Polymer composite membranes show promise in early development for application in IT-FCs for transportation applications. Approach: We have demonstrated that both cation dopants and phosphate precursor influence MPP conductivity and identified the most promising MPP compositions for membrane fabrication. The ceramic MPP materials are fabricated as a composite membrane in a 90:10 wt% ratio with Nafion. We have modified our membrane fabrication procedure to improve the density of our membranes. Accomplishments: We demonstrated through-plane membrane conductivity of 95mScm -1 at T > 200°C and RH<0.04bar with a thickness 50μm. We demonstrated FC performance up to 94hrs at 220°C and <1% RH with a 50μm thick membrane exhibiting an OCV of 0.98V and ASR of 0.08 Wcm 2 . Future work: Further decrease in ASR is expected by decreasing the membrane thickness to <40μm. ITPP with higher P:M ratio will be used to increase the conductivity of the starting material. Long term durability will be assessed against DOE technical targets

30 DIRECT ENERGY CONVERSION↗