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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,063 records · Page 59
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Surface recombination velocity measurement for silicon solar cells

For the design and fabrication of silicon solar cells approaching theoretical ultimate conversion efficiencies, surface recombination velocity plays a crucial role. A technique using a scanning electron microscope with pulsed electron beam has been developed for thy measurement of this important parameter for silicon surfaces. It is shown that the surface recombination velocity(s) increases by an order of magnitude when a freshly etched sample is left out for a few hours, presumably due to generation of surface states. A textured front surface field (FSF) cell with a high-low junction near the surface shows the effect of minority carrier reflection and an apparent reduction of s, whereas a tandem junction (TJ) cell with n+-p junction near the surface gives larger s value.

Daud, T.↗
NASA NTRS1984

Growing Single Crystals From Low-Purity Silicon

Heat exchanger method continuously moves impurities to outside of growth interface. Silicon heated in crucible to above melting point, and melted silicon then solidified by extracting heat from bottom of crucible by means of heat exchanger.

Schmid, F.↗
NASA NTRS1984

Shield Boosts Silicon-Growth Rate

Radiation shield permits faster growth--by 20 percent--of singlecrystal silicon from molten silicon by producting sharper thermal gradients near growth front.

Lane, R. L.↗
NASA NTRS1984

Silane Pyrolysis With Silicon-Seed Aerosol

Large silicon particles result from controlled pyrolysis of silane. Mixture of 1 percent silane in nitrogen pyrolyzed at 300 degrees C to generate aerosol of silicon seed particles.

Flagan, R. C.↗
NASA NTRS1982

Large-area silicon sheet task

A set of computer models was used to define a growth system configuration that was then built and used to grow web with lower thermally generated stress. Aspects of research in the edge-defined film-fed growth (EFG) method of making Si ribbon are reported. A technique was developed to determine base resistivity and carrier lifetime in semicrystalline wafers. Automated growth of 150 kg of 15 cm-dia ingot material per crucible is reviewed. Scanning transmisson electron microscopy (STEM) and microprobe investigations of processed EFG ribbon are reported. The chemical composition of the large precipitates was studied. The structural arrangement and the electrical activity of distentions or close to the central twin plane in processed material were studied. The electrical and structural properties of grain boundaries in silicon are discussed. Temperature-dependence measurements of zero-bias conductance, a photoconductivity technique, and deep-level transient spectroscopy (DLTS) were developed. A grooving and staining technique, secondary ion mass spectroscopy, and EBIC measurements in scanning electron microscopy were used to study enhanced diffusion of phosphorus at grain boundaries in polycrystaline silicon. The fundamental mechanisms of abrasion and wear and the deformation of Si by a diamond in various fluid environments are described. The efficiency of solar cells made from EFG ribbon and Semix Inc. material is reported.

Morrison, A. D.↗
NASA NTRS1982

The effect of Ta2O5 on the interaction between silicon and its contact metallization

Evidence is presented showing that the presence of the commonly used antireflection coating material, Ta2O5, on the free surface of contact metallization can either suppress or enhance, depending on the system, the interaction that takes place at elevated temperatures between the metallization and the underlying silicon. The Ta2O5 layer is shown to suppress both the generation and the annihilation of vacancies at the metal free surface which are necessary to support metal-silicon interactions. It is also shown that the mechanical condition of the free metal surface has a significant effect on the passivating ability of the Ta2O5 layer.

Weizer, V. G.↗
NASA NTRS1982

Radiation damage in front and back illuminated high resistivity silicon solar cells

Radiation induced degradation, in front and back illuminated 84 and 1250 ohm-cm n+pp+ silicon solar cells, was determined and cell performance interpreted using calculated optically injected charge distributions and cell voltage components. The 84 ohm-cm cell degraded less when illuminated from the front or n+ side compared to that when illuminated from the back or p+ side. On the other hand, the 1250 ohm-cm cell degraded less when back illuminated. It is concluded that, in addition to the usual mechanisms leading to decreased collection efficiencies, loss of conductivity modulation is a major cause of radiation damage in high resistivity silicon solar cells. These results suggest that radiation damage to high resistivity n+pp+ cells can be decreased by increasing cell collection efficiency and illuminating the cells from the p+ side.

Weinberg, I.↗
NASA NTRS1982

A system for measuring thermal activation energy levels in silicon by thermally stimulated capacitance

One method being used to determine energy level(s) and electrical activity of impurities in silicon is described. The method is called capacitance transient spectroscopy (CTS). It can be classified into three basic categories: the thermally stimulated capacitance method, the voltage-stimulated capacitance method, and the light-stimulated capacitance method; the first two categories are discussed. From the total change in capacitance and the time constant of the capacitance response, emission rates, energy levels, and trap concentrations can be determined. A major advantage of using CTS is its ability to detect the presence of electrically active impurities that are invisible to other techniques, such as Zeeman effect atomic absorption, and the ability to detect more than one electrically active impurity in a sample. Examples of detection of majority and minority carrier traps from gold donor and acceptor centers in silicon using the capacitance transient spectrometer are given to illustrate the method and its sensitivity.

Cockrum, R. H.↗
NASA NTRS1981

Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

Source record↗
NASA NTRS1982

Effects of processing and dopant on radiation damage removal in silicon solar cells

Gallium and boron doped silicon solar cells, processed by ion implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their postirradiation recovery by thermal annealing was determined. During the postirradiation anneal, gallium doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures after irradiation. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature is attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.

Weinberg, I.↗
NASA NTRS1982

New silicon cell design concepts for 20 percent AMI efficiency

The basic design principles for obtaining high efficiency in silicon solar cells are reviewed. They critically involve very long minority carrier lifetimes, not so much to attain high collection efficiency, but primarily for increased output voltages. Minority carrier lifetime, however, is sensitive to radiation damage, and particularly in low resistivity silicon, on which the high efficiency design is based. Radiation resistant space cells will therefore have to follow differing design principles than high efficiency terrestrial cells.

Wolf, M.↗
NASA NTRS1982

Silicon research and technology

The development of solar cells suitable for space applications are discussed, along with the advantages and disadvantages of silicon and gallium arsenide solar cells. The goal of a silicon solar cell with 18% efficiency has not been reached and does not appear promising in the near future.

Meulenberg, A.↗
NASA NTRS1982

A Technique for Reducing the Outgassing of Silicone Compounds

A technique was developed to heat silicone resins in vacuum and thereby remove the low molecular weight molecules which contribute to the high outgassing of the untreated resins. The technique was successfully applied to two silicone resins. Heating the monomer to a temperature about 398 K (125 C) in a vacuum of about 0.0001 N/sq m removes about 10% of the resin weight, and the resultant resin when catalyzed can meet the outgassing requirements when tested according to ASTM E-595. The physical properties of RTV-615 when devolatilized at 398 K (125 C) or at 423 K (150 C) were measured.

J J Park↗
NASA NTRS1982

Large area silicon sheet by EFG

Work carried out on the JPL Flat Plate Solar Array Project, for the purpose of developing a method for silicon ribbon production by Edge-defined Film-fed Growth (EEG) for use as low-cost substrate material in terrestrial solar cell manufacture, is described. A multiple ribbon furnace unit that is designed to operate on a continuous basis for periods of at least one week, with melt replenishment and automatic ribbon width control, and to produce silicon sheet at a rate of one square meter per hour, was constructed. Program milestones set for single ribbon furnace operation to demonstrate basic EEG system capabilities with respect to growth speed, thickness and cell performance were achieved for 10 cm wide ribbon: steady-state growth at 4 cm/min and 200 micron thickness over periods of an hour and longer was made routine, and a small area cell efficiency of 13+% demonstrated. Large area cells of average efficiency of 10 to 11%, with peak values of 11 to 12% were also achieved. The integration of these individual performance levels into multiple ribbon furnace operation was not accomplished.

Kalejs, J. P.↗
NASA NTRS1983

Low cost solar array project. Cell and module formation research area. Process research of non-CZ silicon material

Liquid diffusion masks and liquid dopants to replace the more expensive CVD SiO2 mask and gaseous diffusion processes were investigated. Silicon pellets were prepared in the silicon shot tower; and solar cells were fabricated using web grown where the pellets were used as a replenishment material. Verification runs were made using the boron dopant and liquid diffusion mask materials. The average of cells produced in these runs was 13%. The relationship of sheet resistivity, temperature, gas flows, and gas composition for the diffusion of the P-8 liquid phosphorus solution was investigated. Solar cells processed from web grown from Si shot material were evaluated, and results qualified the use of the material produced in the shot tower for web furnace feed stock.

Source record↗
NASA NTRS1982

Study of abrasive wear rate of silicon using n-alcohols

The work carried out at the University of Illinois at Chicago for the Flat-Plate Solar Array Project under contract No. 956053 is summarized. The abrasion wear rate of silicon in a number of fluid environments and the parameters that influence the surface mechanical properties of silicon were determined. Three tests were carried out in this study: circular and linear multiple-scratch test, microhardness test and a three-point bend test. The pertinent parameters such as effect of surface orientation, dopant and fluid properties were sorted. A brief review and critique of previous work is presented.

Danyluk, S.↗
NASA NTRS1983

Developments toward an 18% efficient silicon solar cell

Limitations to increased open-circuit voltage were identified and experimentally verified for 0.1 ohm-cm solar cells with heavily doped emitters. After major reduction in the dark current contribution from the metal-silicon interface of the grid contacts, the surface recombination velocity of the oxide-silicon interface of shallow junction solar cells is the limiting factor. In deep junction solar cells, where the junction field does not aid surface collection, the emitter bulk is the limiting factor. Singly-diffused, shallow junction cells have been fabricated with open circuit voltages in excess of 645 mV. Double-diffusion shallow and deep junctions cells have displayed voltages above 650 mV. MIS solar cells formed on 0.1 ohm-cm substrates have exibited the lowest dark currents produced in the course of the contract work.

Meulenberg, A., Jr.↗