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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,063 records · Page 59
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Quantitative comparison of organic photovoltaic bulk heterojunction photostability under laser illumination

The photostability of bulk heterojunction organic photovoltaic films containing a polymer donor and a fullerene-derivative acceptor was examined using resonance Raman spectroscopy and controlled laser power densities. The polymer donors were poly(3-hexylthiophene-2,5-diyl) (P3HT), poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT), or poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl}{3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl}) (PTB7). Four sample preparation methods were studied: (i) thin or (ii) thick films with fast solvent evaporation under nitrogen, (iii) thick films with slow solvent evaporation under nitrogen, and (iv) thin films dried under nitrogen followed by thermal annealing. Polymer order was assessed by monitoring a Raman peak’s full width at half-maximum and location as a function of illumination time and laser power densities from 2.5 × 10 3 to 2.5 × 10 5 W cm –2 . Resonance Raman spectroscopy measurements show that before prolonged illumination, PCDTBT and PTB7 have the same initial order for all preparation conditions, while P3HT order improves with slow solvent drying or thermal annealing. All films exhibited changes to bulk heterojunction structure with 2.5 × 10 5 Wcm –2 laser illumination as measured by resonance Raman spectroscopy, and atomic force microscopy images show evidence of sample heating that affects the polymer over an area greater than the illumination profile. Furthermore, photostability data are important for proper characterization by techniques involving illumination and the development of devices suitable for real-world applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Controllable strain-driven topological phase transition and dominant surface-state transport in HfTe5

Abstract The fine-tuning of topologically protected states in quantum materials holds great promise for novel electronic devices. However, there are limited methods that allow for the controlled and efficient modulation of the crystal lattice while simultaneously monitoring the changes in the electronic structure within a single sample. Here, we apply significant and controllable strain to high-quality HfTe 5 samples and perform electrical transport measurements to reveal the topological phase transition from a weak topological insulator phase to a strong topological insulator phase. After applying high strain to HfTe 5 and converting it into a strong topological insulator, we found that the resistivity of the sample increased by 190,500% and that the electronic transport was dominated by the topological surface states at cryogenic temperatures. Our results demonstrate the suitability of HfTe 5 as a material for engineering topological properties, with the potential to generalize this approach to study topological phase transitions in van der Waals materials and heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Purcell enhancement of directional edge photocurrent in a van der Waals self-cavity

Cavities provide a means to manipulate the optical and electronic responses of quantum materials by selectively enhancing light-matter interaction at specific frequencies and momenta. While cavities typically involve external structures, exfoliated flakes of van der Waals (vdW) materials can form intrinsic self-cavities due to their small finite dimensions, confining electromagnetic fields into plasmonic cavity modes, characterized by standing-wave current distributions. While cavity-enhanced phenomena are well-studied at optical frequencies, the impact of self-cavities on nonlinear electronic responses—such as directional photocurrent—remains largely unexplored, particularly in the terahertz regime, critical for emerging ultrafast optoelectronic technologies. Here, we report a self-cavity-induced Purcell enhancement of directional photocurrents in the vdW semimetal WTe 2 . Using ultrafast optoelectronic circuitry, we measured coherent near-field THz emission resulting from nonlinear photocurrents excited at the sample edges. We observed enhanced emission at finite frequencies, tunable via excitation fluence and sample geometry, which we attribute to plasmonic interference effects controlled by the cavity boundaries. We developed an analytical theory that captures the cavity resonance conditions and spectral response across multiple devices. Our findings establish WTe 2 as a bias-free, geometry-tunable THz emitter and demonstrate the potential of self-cavity engineering for controlling nonlinear, nonequilibrium dynamics in quantum materials.

condensed-matter physics↗
DOE OSTI2014

Engineering Gilbert damping by dilute Gd doping in soft magnetic Fe thin films

By analyzing the ferromagnetic resonance linewidth, we show that the Gilbert damping constant in soft magnetic Fe thin films can be enhanced by ∼6 times with Gd doping of up to 20%. At the same time, the magnetic easy axis remains in the film plane while the coercivity is strongly reduced after Gd inclusion. X-ray magnetic circular dichroism measurements reveal a strong increase in the orbital-to-spin moment ratio of Fe with increasing Gd concentration, in full agreement with the increase in the Gilbert damping obtained for these thin films. Combined with x-ray diffraction and vibrating sample magnetometry, the results demonstrate that the FeGd thin films with dilute Gd doping of up to 20% are promising candidates for spin-transfer-torque applications in soft magnetic devices, in which an enhanced damping is required.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Mössbauer spectroscopy study of Al distribution in BaAl{sub x}Fe{sub 12−x}O{sub 19} thin films

Barium hexagonal ferrite (BaM) films grown on Si are a good candidate material for new-generations of on-wafer microwave devices operating at frequencies above 40 GHz. Doping BaM with Al increases the value of anisotropy field even more, and in combination with a large value of remanence, would allow one to create a self-biasing material/structure that would eliminate the need for permanent bias magnets in millimeter wave devices. To examine the occupation of Fe sublattices by Al ions, we carried out Conversion Electron Mössbauer Spectroscopy (CEMS) measurements at room temperature and zero magnetic field (after magnetizing the samples in a strong magnetic field). The spectra can be reasonably fitted with three components (sub-spectra) corresponding to different Fe sublattices. There are significant changes in the spectra with the addition of Al: The magnetic hyperfine field decreases for all three components, and their relative contributions also change remarkably. These observations are in agreement with the fact that the Al substitutes Fe, thus lowering the component contributions and the value of the hyperfine field. In addition, our previous XRD analysis indicates increasing grain misalignment with Al content, further supporting the CEMS data.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

M-STAR: Magnetism second target advanced reflectometer at the Spallation Neutron Source

M-STAR is a next generation polarized neutron reflectometer with advanced capabilities. A new focusing guide concept is optimized for samples with dimensions down to a millimeter range. A proposed hybrid pulse-skipping chopper will enable experiments at constant geometry at one incident angle in a broad range of wavevector transfer Q up to 0.3 A –1 for specular, off-specular, and GISANS measurements. M-STAR will empower nanoscience and spintronics studies routinely on small samples (~2 × 2 mm 2 ) and of atomic-scale thickness using versatile experimental conditions of magnetic and/or electric fields, light, and temperature applied in situ to novel complex device-like nanosystems with multiple buried interfaces. M-STAR will enable improved grazing incidence diffraction measurements, as a surface-sensitive depth-resolved probe of, e.g., the out-of-plane component of atomic magnetic moments in ferromagnetic, antiferromagnetic, and more complex structures as well as in-plane atomic-scale structures inaccessible with contemporary diffractometry and reflectometry. New horizons will be opened by the development of an option to probe near-surface dynamics with inelastic grazing incidence scattering in the time-of-flight mode. These novel options in combination with ideally matched parameters of the second target station will place M-STAR in the world’s leading position for high resolution polarized reflectometry.

47 OTHER INSTRUMENTATION↗
DOE OSTI2015

Boron carbide coating deposition on tungsten and testing of tungsten layers and coating under intense plasma load

A device intended for boron carbide coating deposition and material testing under high heat loads is presented. A boron carbide coating 5 μm thick was deposited on the tungsten substrate. These samples were subjected to thermocycling loads in the temperature range of 400–1500°C. Tungsten layers deposited on tungsten substrates were tested in similar conditions. Results of the surface analysis are presented.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material's anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Time resolved photo-luminescent decay characterization of mercury cadmium telluride focal plane arrays

The minority carrier lifetime is a measurable material property that is an indication of infrared detector device performance. To study the utility of measuring the carrier lifetime, an experiment has been constructed that can time resolve the photo-luminescent decay of a detector or wafer sample housed inside a liquid nitrogen cooled Dewar. Motorized stages allow the measurement to be scanned over the sample surface, and spatial resolutions as low as 50µm have been demonstrated. A carrier recombination simulation was developed to analyze the experimental data. Results from measurements performed on 4 mercury cadmium telluride focal plane arrays show strong correlation between spatial maps of the lifetime, dark current, and relative response.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Near-field imaging and spectroscopy of terahertz resonators and metasurfaces [Invited]

Terahertz (THz) metasurfaces have become a key platform for engineering light-matter interaction at THz frequencies. They have evolved from simple metallic resonator arrays into tunable and programmable devices, displaying ultrafast modulation rates and incorporating emerging quantum materials. The electrodynamics which govern metasurface operation can only be directly revealed at the scale of subwavelength individual metasurface elements, through sampling their evanescent fields. It requires near-field spectroscopy and imaging techniques to overcome the diffraction limit and provide spatial resolution down to the nanoscale. Through a series of case studies, this review provides an in-depth overview of recently developed THz near-field microscopy capabilities for research on metamaterials.

Hale, Lucy L. (ORCID:0000000176544272)↗
DOE OSTI2023

Statistical Framework for Planning a Shelf Life Program with Binary Performance Data

This document outlines a statistical framework for establishing a shelf-life program for components whose performance is measured by a binary response, usually ‘pass’ or ‘fail.’ The approach applies to both single measurement devices and repeated measurement devices. The high-level objective of these plans is to quickly detect any sizeable increase in fraction defective as the product ages. The statistical approach is to choose a sample size and monitoring technique that alarms when the fraction defective increases to an unacceptably high level, but does not alarm when the process is at nominal. The nominal (acceptable) fraction defective is used, and an increased fraction defective (unacceptable) is assumed as part of the control chart design. The control chart recommended for this problem is the Bernoulli Cumulative Sum (CUSUM) control chart.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Achieving Single-Electron Sensitivity at Enhanced Speed in Fully-Depleted CCDs with Double-Gate MOSFETs

We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer efficiency. The junction coupling between the CCD and MOSFET channels has enabled high sensitivity, demonstrating sub-electron readout noise in one pixel charge measurement. We have also demonstrated the non-destructive readout capability of the device. Achieving single-electron and single-photon per pixel counting in the entire CCD pixel array has been made possible through the averaging of a small number of samples. We have demonstrated fully-depleted CCD readout with better performance than the floating diffusion and floating gate amplifiers available today, in both single and multisampling regimes, boasting at least six times the speed of floating gate amplifiers.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Astronomical Spectroscopy with Skipper CCDs: First Results from a Skipper CCD Focal Plane Prototype at SIFS

We present the first on-sky results from an ultra-low-readout-noise Skipper CCD focal plane prototype for the SOAR Integral Field Spectrograph (SIFS). The Skipper CCD focal plane consists of four 6k x 1k, 15 $\mu$m pixel, fully-depleted, p-channel devices that have been thinned to ~250 $\mu$m, backside processed, and treated with an anti-reflective coating. These Skipper CCDs were configured for astronomical spectroscopy, i.e., single-sample readout noise < 4.3 e- rms/pixel, the ability to achieve multi-sample readout noise $\ll$ 1 e- rms/pixel, full-well capacities ~40,000-65,000 e-, low dark current and charge transfer inefficiency (~2 x 10$^{-4}$ e-/pixel/s and 3.44 x 10$^{-7}$, respectively), and an absolute quantum efficiency of $\gtrsim$ 80% between 450 nm and 980 nm ($\gtrsim$ 90% between 600 nm and 900 nm). We optimized the readout sequence timing to achieve sub-electron noise (~0.5 e- rms/pixel) in a region of 2k x 4k pixels and photon-counting noise (~0.22 e- rms/pixel) in a region of 220 x 4k pixels, each with a readout time of $\lesssim$ 17 min. We observed two quasars (HB89 1159+123 and QSO J1621-0042) at redshift z ~ 3.5, two high-redshift galaxy clusters (CL J1001+0220 and SPT-CL J2040-4451), an emission line galaxy at z = 0.3239, a candidate member star of the Bo\"{o}tes II ultra-faint dwarf galaxy, and five CALSPEC spectrophotometric standard stars (HD074000, HD60753, HD106252, HD101452, HD200654). We present charge-quantized, photon-counting observations of the quasar HB89 1159+123 and show the detector sensitivity increase for faint spectral features. We demonstrate signal-to-noise performance improvements for SIFS observations in the low-background, readout-noise-dominated regime. We outline scientific studies that will leverage the SIFS-Skipper CCD data and new detector architectures that utilize the Skipper floating gate amplifier with faster readout times.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Band structure dependent electronic localization in macroscopic films of single-chirality single-wall carbon nanotubes

Significant understanding has been achieved over the last few decades regarding chirality-dependent properties of single-wall carbon nanotubes (SWCNTs), primarily through single-tube studies. However, macroscopic manifestations of chirality dependence have been limited, especially in electronic transport, despite the fact that such distinct behaviors are needed for many applications of SWCNT-based devices. In addition, developing reliable transport theory is challenging since a description of localization phenomena in an assembly of nanoobjects requires precise knowledge of disorder on multiple spatial scales, particularly if the ensemble is heterogeneous. Here, we report an observation of pronounced chirality-dependent electronic localization in temperature and magnetic field dependent conductivity measurements on macroscopic films of single-chirality SWCNTs. The samples included large-gap semiconducting (6,5) and (10,3) films, narrow-gap semiconducting (7,4) and (8,5) films, and armchair metallic (6,6) films. Experimental data and theoretical calculations revealed Mott variable-range-hopping dominated transport in all samples, while localization lengths fall into three distinct categories depending on their band gaps. Armchair films have the largest localization length. Here our detailed analyses on electronic transport properties of single-chirality SWCNT films provide significant new insight into electronic transport in ensembles of nanoobjects, offering foundations for designing and deploying macroscopic SWCNT solid-state devices.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Revealing the beneficial role of K in grain interiors, grain boundaries, and at the buffer interface for highly efficient CuInSe 2 solar cells

K incorporation within grain boundaries, grain interiors, and interfaces has been studied within CuInSe 2 solar cells to better understand the beneficial or detrimental role of K distribution among these regions in chalcopyrite–based solar cells. Solar cells have been fabricated with intentional K introduction into specific regions of the device including the CuInSe 2 /CdS interface (CuInSe 2 /KInSe 2 /CdS) and the grain interiors (Cu 0.93 K 0.07 InSe 2 /CdS). A control CuInSe 2 /CdS device was also studied to separate effects of K originating from the soda–lime glass substrate from those of intentionally introduced K. The experiment was designed to understand K effects in Cu(In,Ga)Se 2 solar cells while mitigating complications from multiple elements in the 3 + site. The distribution of all elements within these samples has been directly observed with sub–nm resolution via atom probe tomography. In addition, electron beam–induced current measurements have been performed to correlate the atom probe tomography compositional profiles to the nanoscale carrier collection properties. The experiments show that a large decrease in the Cu/In ratio at the CdS interface can be achieved by forming KInSe 2 at the absorber surface, which drastically improves the device efficiency. The results presented here show a direct link between K concentration, Cu depletion, and In accumulation, such that the Cu/In ratio significantly reduces with K incorporation. In conclusion, the findings help clarify the mechanism behind K–induced efficiency enhancement.

14 SOLAR ENERGY↗
DOE OSTI2025

Direct observation of distinct bulk and edge nonequilibrium spin accumulation in ultrathin MoTe 2

Low-symmetry two-dimensional (2D) topological materials such as MoTe 2 host efficient charge-to-spin conversion (CSC) mechanisms that can be harnessed for novel electronic and spintronic devices. However, the nature of the various CSC mechanisms and their correlation with underlying crystal symmetries remain unsettled. In this work, we use local spin-sensitive electrochemical potential measurements to directly probe the spatially dependent nonequilibrium spin accumulation in MoTe 2 flakes down to four atomic layers. We are able to clearly disentangle contributions originating from the spin Hall and Rashba-Edelstein effects and uncover an abundance of unconventional spin polarizations that develop uniquely in the sample bulk and edges with decreasing thickness. Using ab-initio calculations, we construct a unified understanding of all the observed CSC components in relation to the material dimensionality and stacking arrangement. Our findings not only illuminate previous CSC results on MoTe 2 but also have important ramifications for future devices that can exploit the local and layer-dependent spin properties of this 2D topological material.

Science & Technology - Other Topics↗