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At least 1,063 records · Page 59

Power Sources Symposium, 27th, Atlantic City, N.J., June 21-24, 1976, Proceedings

A lithium-chlorine rechargeable battery is considered along with an FeS electrode development for a secondary Li5Si-FeS battery, the sodium-sulfur battery, nickel battery systems for electric vehicles, reactions in lithium thionyl chloride cells, progress in the development of lithium inorganic batteries, a stable electrolyte for Li/SO2 reserve cells, and rechargeable lithium transition metal sulfide batteries. Attention is also given to thermal runaway tests on nickel-cadmium aircraft batteries, the development of nickel-zinc batteries for aircraft, an evaluation of sealed lead acid batteries for aircraft applications, the charging of sealed lead-acid batteries, hydrogen recombination in sealed nickel-cadmium cells, the characteristics of nickel-hydrogen flight cells, the lithium-iodine cell, low power methanol fuel cells, and a nuclear battery hybrid configuration study.

Source record↗

The MPD arc as a plasmadynamic laser source

The paper reports results of measurements of local plasma properties (electron density and temperature, radiance, and population density) in the recombining plasma flow of a high power (100 kW) quasi-steady MPD arc designed as a plasmadynamic laser source. The profiles of electron density and temperature and the populations of excited states of Ar II show large deviations from LTE and indicate the existence of population inversions between the 4d and 4p states.

Campbell, E. M.↗

A refracting radio telescope

Observations of extraterrestrial radio sources at the lower end of the radio frequency spectrum are limited by reflection of waves from the topside ionosphere and by the large size of antenna apertures necessary for the realization of narrow beamwidths. The use of the ionosphere as a lens is considered. The lens is formed by the release of chemicals such as H2 and H2O at the F2-layer peak. These chemicals promote dissociative recombination of O(+) in the ionosphere resulting in a local reduction in plasma density. Gradients in electron density in the vicinity of the gas release tend to focus rays propagating through the depleted region. Preliminary calculations indicate that a lens capable of focusing cosmic radio waves in the 1 to 10 MHz frequency range may be produced by the release of 100 kg of H2 at the peak of the nighttime F layer. The beamwidth of a refracting radio telescope using this lens may be less than 1/5 degree.

Bernhardt, P.↗

Performance limitations of silicon solar cells

This paper discusses the performance limitations of silicon solar cells which have been identified and investigated using a detailed numerical analysis of solar cell operation. Efficiency limitations are discussed as related to doping densities, minority carrier lifetimes, widths of solar cell regions, surface recombination, antireflecting layers, and ohmic contact stripes. Areas in which improvements can be expected in performance are identified and discussed.

Hauser, J. R.↗

A computer analysis of heterojunction and graded composition solar cells

The development and application of a variable composition solar cell computer analysis program is discussed. The basic device equations are derived and results of the computer analysis of several Al(x)Ga(1-x)As and GaAs(1-x)P(x) solar cell structures are presented along with a discussion of the effects of interface states and various composition and doping profiles on maximum solar cell efficiency. Interface states are found to be responsible for a severe reduction in the efficiency of GaAs(1-x)P(x) cells, but do not significantly affect the behavior of Al(x)Ga(1-x)As cells. The depth of the p-n junction below the wide bandgap window layer is a critical factor in determining the loss of minority carriers to interface recombination at the heterojunction.

Sutherland, J. E.↗

A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices

An experimentally based methodology that determines the effective gap shrinkage and lifetime in the emitter of a p-n junction solar cell is described which provides an experimental means for assessing the importance of gap shrinkage relative to that of large recombination rates in the highly doped emitter. The base lifetime is also determined. The methodology pertains to a solar cell after the junction is formed, so that each material parameter determined includes the effects of the processing used in junction fabrication. The methodology consists of strategy and procedures for designing experiments and interpreting data consistently with the physical mechanisms governing device behavior. This careful linking to the device physics uncover the material parameters concealed in the data. To illustrate the procedures, they are applied to an n(+)-p solar cell having substrate resistivity of about 0.1 ohm-cm.

Lindholm, F. A.↗

Upper bound on the equilibrium concentration of atomic H in solid H2

A phenomenological rate process theory has been developed for the production, storage and recombination of atomic H free radicals in a tritium-impregnated solid H2 at temperatures in the range of about 0.1 to 4 K. In this paper it is shown that the theory requires a stringent upper bound on the equilibrium concentration of trapped atomic H, namely that it cannot exceed about 0.125%, even if the temperature is reduced to an arbitrary low value and a very strong magnetic field is applied to the tritium-impregnated H2 solid.

Rosen, G.↗

Variations in electron density in the middle latitude D-region above Urbana, Illinois

Electron density measurements made with the partial reflections technique above Urbana, Illinois (44 deg 10 min N, 88 deg 10 min W) were analyzed for day-to-day variations, seasonal variations, magnetic storm aftereffects, and stratosphere-ionosphere coupling effects. As well as showing a winter anomaly, the electron densities near 76 km were significantly lower in fall than in spring. Magnetic storm aftereffects of the type predicted by models of energetic electron precipitation at middle latitudes were observed. No strong correlations were found between stratospheric and D-region time series, or between the occurrence of stratospheric warmings and D-region changes. It is likely that most of the electron density variation was due to variations in the transport of minor neutral constituents. The spring-fall differences were also probably caused by differences in minor constituent concentrations rather than the effect of temperature changes on the recombination coefficient.

Wratt, D. S.↗

The rate coefficient for the O/+/ + N2 reaction in the ionosphere

The rate coefficient for the reaction O(+) + N2 yields NO(+) + N is determined as a function of temperature from the photochemistry of NO(+) for both day and night conditions by using a large sample of simultaneous measurements of ion and neutral concentrations and temperatures made by the Atmosphere Explorer C satellite. The results cover the ion temperature range from 500 to 1200 K. Using recent flow-drift-tube results, the rate coefficient is calculated as a function of ion temperature and mean ion drift velocity for ionospheric conditions. The satellite and laboratory determinations are found to be in good agreement. Using this temperature dependence, an earlier determination of the dissociative recombination coefficient of NO(+) with electrons is refined.

Torr, M. R.↗

Basic mechanisms governing solar-cell efficiency

The efficiency of a solar cell depends on the material parameters appearing in the set of differential equations that describe the transport, recombination, and generation of electrons and holes. This paper describes the many basic mechanisms occurring in semiconductors that can control these material parameters.

Lindholm, F. A.↗

Spectral observations of Eta Carinae at 4 microns

Spectral observations of the central region of the Eta Carinae nebula at 4 microns have measured the Brackett-alpha hydrogen recombination-line intensity. The bulk of the line and continuum radiation arises in a small central source which is slightly narrower in the line radiation and is barely resolved by the employed beamwidth of 3.4 arcsec. The continuum radiation is well-fitted by an exponential relation to a distance of 10 arcsec from the central source. The line intensity requires a central source which emits 10 to the 49th power ionizing photons per sec into a region of electron density greater than 1 million per cu cm.

Aitken, D. K.↗

Impurity concentrations and surface charge densities on the heavily doped face of a silicon solar cell

Increased solar cell efficiencies are attained by reduction of surface recombination and variation of impurity concentration profiles at the n(+) surface of silicon solar cells. Diagnostic techniques are employed to evaluate the effects of specific materials preparation methodologies on surface and near surface concentrations. It is demonstrated that the MOS C-V method, when combined with a bulk measurement technique, yields more complete concentration data than are obtainable by either method alone. Specifically, new solar cell MOS C-V measurements are combined with bulk concentrations obtained by a successive layer removal technique utilizing measurements of sheet resistivity and Hall coefficient.

Weinberg, I.↗

High efficiency GaAs solar cells

The present status of the GaAlAs/GaAs heteroface solar cell program is reported. Studies have been concentrated on GaAlAs/GaAs heteroface solar cells; however, some research has been conducted on thin junction, diffused GaAs solar cells. Emphasis has been on obtaining high efficiency (18% to 20%) GaAs solar cells. Two problems that have limited the efficiency of GaAs solar cells are the high recombination velocity of carriers near the surface and the low minority carrier diffusion length in n-GaAs.

Walker, G. H.↗

Ionization induced damage in crystalline silicon

Close examination of the interaction of the energetic knock-on atoms with the local lattice environment reveals a damage mechanism which does satisfy the experimental data on proton irradiation of silicon. A proton-atom interaction with high energy transfer is considered where the proton path is delineated by a trail of ionization, and the silicon ion path is characterized by much heavier ionization terminating in a dense displacement cluster. At collision, many of the silicon electrons are stripped off, and the resulting energetic ion subsequently loses energy rapidly by Coulomb interaction with bound electrons. The rate of energy loss depends on the charge state and velocity of the knock-on ion. For ion energies in excess of 1 MeV, the intensity of ionization is sufficient to permit lattice atoms, stripped of their binding electrons, to reorient randomly before having an opportunity to recombine with electrons and re-establish the lattice. The path of a knock-on ion thus becomes a thin cylinder of amorphous material within the crystal. Amorphous silicon has a Fermi level closer to mid-band than does single crystal silicon, and a strong field therefore, results around this damaged region. The field produces a large depletion region, representing a very large capture cross section for minority carriers.

Meulenberg, A., Jr.↗

Atomic hydrogen storage method and apparatus

Atomic hydrogen, for use as a fuel or as an explosive, is stored in the presence of a strong magnetic field in exfoliated layered compounds such as molybdenum disulfide or an elemental layer material such as graphite. The compound is maintained at liquid helium temperatures and the atomic hydrogen is collected on the surfaces of the layered compound which are exposed during delamination (exfoliation). The strong magnetic field and the low temperature combine to prevent the atoms of hydrogen from recombining to form molecules.

Woollam, J. A.↗

Silicon materials task of the low cost solar array project, phase 2

The object of phase 2 of this program is to investigate and define the effects of various processes, contaminants and process-contaminant interactions in the performance of terrestrial solar cells. The major effort this quarter was in the areas of crystal growth and thermal processing, comparison of impurity effects in low and high resistivity silicon, modeling the behavior of p-type ingots containing Mo, and C and, quantitative analysis of bulk lifetime and junction degradation effects in contaminated solar cells. The performance of solar cells fabricated on silicon web crystals grown from melts containing about 10 to the 18th power/cu cm of Cr, Mn, Fe, Ni, Ti, and V, respectively were measured. Deep level spectroscopy of metal-contaminated ingots was employed to determine the level and density of recombination centers due to Ti, V, Ni, and Cr.

Hopkins, R. H.↗

Photon degradation effects in terrestrial solar cells

Reduction in cell output was observed in N(+)/P cells upon exposure to illumination or upon the application of a sufficiently high forward bias. Conversely, an enhancement in output was observed when P(+)/N cells were illuminated. Investigations performed on N(+)/P cells indicated that a recombination center located at E sub c - 0.37 eV in the forbidden band was responsible for the loss in output. The center was electrically inactive in its ground state but was activated either by raising the minority carrier quasi-Fermi level sufficiently close to the latent center energy level in the band gap, or by direct excitation of electrons from the valence band to the latent center level. The center was identified as a complex of a lattice defect and a silver atom or cluster of atoms.

Weizer, V. G.↗

Measurement techniques for analysis of fission fragment excited gases

Spectroscopic analysis of fission fragment excited He, Ar, Xe, N2, Ne, Ar-N2, and Ne-N2 have been conducted. Boltzmann plot analysis of He, Ar and Xe have indicated a nonequilibrium, recombining plasma, and population inversions have been found in these gases. The observed radiating species in helium have been adequately described by a simple kinetic model. A more extensive model for argon, nitrogen and Ar-N2 mixtures was developed which adequately describes the energy flow in the system and compares favorably with experimental measurements. The kinetic processes involved in these systems are discussed.

Schneider, R. T.↗