Highly spin-polarized current in Co-substituted Fe{sub 3}O{sub 4} epitaxial thin films at room temperature
Epitaxial thin films of cobalt ferrite Co{sub x}Fe{sub 3−x}O{sub 4} (x = 0.0, 0.5, and 1.0) were fabricated on α-Al{sub 2}O{sub 3} (001) substrates using pulsed laser deposition. It was found that the coercive force of the cobalt ferrite films could be tuned by changing the Co content. The films prepared under low oxygen pressure (1.0 × 10{sup −6 }Pa) showed semiconducting behavior even for x = 1.0. X-ray photoelectron spectroscopy revealed that the Co ions were 2{sup +} for all compositions. On the other hand, it was found that the Fe ions were in the Fe{sup 2+}/Fe{sup 3+} valence state, which may cause small-polaron hopping among the Fe-3d electrons in the films. An anomalous Hall effect was observed in the Co{sub 0.5}Fe{sub 2.5}O{sub 4} film even at 300 K, suggesting that carriers in the films were highly spin-polarized at room temperature.