Suppression of multipacting in high power RF couplers operating with superconducting cavities
Not Available
Ostroumov, P. N.↗
SEARCH · Engineering Papers
Results for “RF”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Charge production studies from Cs 2 Te photocathodes in a normal conducting RF gun
Not Available
Hernandez-Garcia, C.↗
Observation of a THz-sub-THz spontaneous coherent undulator radiation driven by a low energy electron beam from a thermionic RF electron gun
In this work, we report observations of an intense, multi-band, sub-THz and THz radiation extracted from a similar to 2-3 MeV electron beam with a flat transverse profile propagating in an oversized rectangular waveguide placed into a 3.25 mm gap of a planar undulator having 1.3 cm period and similar to 20 cm length. Radiation outcoupling is accomplished using a horn antenna and a miniature permanent in-vacuum magnet separating the mm-sub-mm-waves and electron beam. A table-top experiment utilizes a radio frequency thermionic electron gun delivering a thousand momentum-chirped microbunches per macropulse and an alpha-magnet producing microbunches of a sub-mm length. Total radiated energy of a sub-millijoule per a microsecond radio frequency macropulse is demonstrated with flux more than ten micro-Joules per centimeter squared. With 1 THz filter the energy measured is about 1 microjoule and flux of a few micro-Joules per centimeter squared.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
The role of rectified currents in far-field RF sheaths and in SOL losses of HHFW power on NSTX
Not Available
Perkins, R. J.↗
D retention in e-beam powder-bed fused (3-D printed) tungsten exposed to high-flux deuterium plasma in Pisces-RF
Not Available
Nuclear Science & Technology↗
A first study of the complex-concentrated-alloy W38Ta36Cr15V11 in Pisces-RF high-flux deuterium plasma
Not Available
Vigil, M. T. (ORCID:0000000212767757)↗
Material Characterization Study of Magnetite Nanocrystals for RF Sensing
Magnetite nanocrystals show promise for electrically small gigahertz frequency applications, which could lead to miniaturizing transformer cores and new sensing technologies. This work presents a rigorous radiofrequency characterization of these nanocrystals using vector network analyzer (VNA) ferromagnetic resonance (FMR) measurements. For the first time, two different average diameters of Fe 3 O 4 nanocrystals are investigated (7.3 and 20.2 nm). When the VNA–FMR results were compared to micromagnetic simulations, the magnetic anisotropy (K 1 ) deviated from the ideal mean orientation value of K 1 /2 to K 1 /80 for the 7.3 nm nanocrystal. In contrast, the obtained magnetic anisotropy in 20.2 nm nanocrystals slightly deviated to K 1 /11 due to less structural deformations. These findings resulted in a newly proposed methodology for an approximate simulation based on VNA–FMR measurements. In addition, this work estimates the approximate amount of nanocrystals needed to measure a useful VNA–FMR spectrum.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Reduced Energy Cost of Ammonia Synthesis Via RF Plasma Pulsing
Not Available
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate
The interface between indium tin oxide and p-type silicon is studied by in situ X-ray photoelectron spectroscopy (XPS). This is done by performing XPS without breaking vacuum after deposition of ultrathin layers in sequences. Elemental tin and indium are shown to be present at the interface, both after 2 and 10 s of deposition. In addition, the silicon oxide layer at the interface is shown to be composed of mainly silicon suboxides rather than silicon dioxide.
36 MATERIALS SCIENCE↗
Studies of thin films of Ti- Zr -V as non-evaporable getter films prepared by RF sputtering
Non-Evaporable Getter (NEG) films of the Ti-Zr-V prepared on stainless steel substrates by Radio Frequency sputtering. To observe its getter behavior at the lowest activation temperature, the sample is heated continuously at different temperatures (100 Degree-Sign C, 150 Degree-Sign C, 200 Degree-Sign C and 250 Degree-Sign C) for 2 hours. The changes of the surface chemical composition at different temperaturesare analyzed by using XPS and SEM (Scanning Electron Microscopy) techniques. The volume elemental composition of the film has been measured by energy dispersive X-ray spectroscopy (EDX). The in-situ XPS measurements of the activated getter films show the disappearance of the superficial oxide layer through the variation in the oxygen stoichiometry during thermal activation. Results of these studies show that the deposited films of Ti-Zr-V could be used as NEG to produce extreme high vacuum.
36 MATERIALS SCIENCE↗
In situ Crystallization of RF sputtered ITO thin films: A comparison with annealed samples
Tin doped Indium Oxide (ITO) is a wide band gap semiconductor with high conductivity and transparency in the visible region of the solar spectrum. One of the most popular and exploited applications of ITO is the realization of the transparent conductive layers needed for the electrodes of light sensitive devices, such as photovoltaic cells. The thermal energy for the crystallization of ITO films is very low (150°C). The crystallization can be achieved by the continuous energetic bombardment of the ions in the sputtering chamber without annealing or substrate heating. The accumulated energy will ensure the thermal energy necessary for the crystallization. With the help of sufficiently high sputtering power and sufficient duration, crystallized ITO films can be produced without annealing. In this report, a comparison of the conductivity and transparency of ITO films under two crystallization conditions ((1) crystallization of the sputtered films by annealing; (2) in situ crystallization of the films by providing high sputtering power and long sputtering duration) will be presented.
36 MATERIALS SCIENCE↗
Structural and optical properties of CdO thin films deposited by RF magnetron sputtering technique
Cadmium oxide (CdO) thin films were deposited on glass substrate by r.f. magnetron sputtering technique using a high purity (99.99%) Cd target of 2-inch diameter and 3 mm thickness in an Argon and oxygen mixed atmosphere with sputtering power of 50W and sputtering pressure of 2×10{sup −2} mbar. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM). The XRD analysis reveals that the films were polycrystalline with cubic structure. The visible range transmittance was found to be over 70%. The optical band gap increased from 2.7 eV to2.84 eV with decrease of film thickness.
36 MATERIALS SCIENCE↗
Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates
We report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice mismatch. Defects rising from Ge/Si interface are mostly located within the first tens of nanometers, and threading dislocation density (TDD) values as low as 10{sup 6} cm{sup −2} are obtained. Misfit stress is released fast: residual strain of −0.4% is calculated from Moiré pattern analysis. Moreover we demonstrate a striking feature of low temperature plasma epitaxy, namely the fact that crystalline quality improves with thickness without epitaxy breakdown, as shown by TEM and depth profiling of surface TDD.
36 MATERIALS SCIENCE↗
A collisional radiative model for caesium and its application to an RF source for negative hydrogen ions
A collisional radiative (CR) model for caesium atoms in low-temperature, low-pressure hydrogen-caesium plasmas is introduced. This model includes the caesium ground state, 14 excited states, the singly charged caesium ion and the negative hydrogen ion. The reaction probabilities needed as input are based on data from the literature, using some scaling and extrapolations. Additionally, new cross sections for electron collision ionization and three-body recombination have been calculated. The relevance of mutual neutralization of positive caesium ions and negative hydrogen ions is highlighted: depending on the densities of the involved particle species, this excitation channel can have a significant influence on the population densities of excited states in the caesium atom. This strong influence is successfully verified by optical emission spectroscopy measurements performed at the IPP prototype negative hydrogen ion source for ITER NBI. As a consequence, population models for caesium in electronegative low-temperature, low-pressure hydrogen-caesium plasmas need to take into account the mutual neutralization process. The present CR model is an example for such models and represents an important prerequisite for deducing the total caesium density in surface production based negative hydrogen ion sources.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Negative ion production in the RF multiaperture surface-plasma source
The experiments on negative hydrogen ion beam production in a multi-aperture long-pulse surface-plasma source are described. H- ions are produced on the surface of a plasma grid covered by cesium and illuminated by fast plasma particles. The source uses a radio-frequency driver to generate plasma. A composite magnet system made of external permanent magnets confines and filters electrons in the plasma region, and deflects them in the extraction area. A multiaperture, multi-electrode ion optical system is used for beam formation. The electrode heating and cooling during long pulses is accomplished by circulating a heat transfer fluid through channels drilled in the electrodes bodies. H- ions extraction through a single aperture and 21 apertures was performed and studied. A stable H- beam with the current up to 0.7 A, energy up to 74 kV, and pulse duration up to 7 s was routinely obtained.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
The role of gas composition in plasma-dust structures in RF discharge
The influence of a mixture of light and heavy gases, i.e., helium and argon, on plasma-dust structures in the radiofrequency discharge has been studied. The dust chains in the sheath of the radiofrequency discharge, the average distance between the dust particles and their chains, have been analyzed. A significant effect of small amounts of argon on the correlation characteristics of dust particles has been observed. The results of numerical simulation of ion and electron drift in the mixture of helium and argon are presented. It is shown that even 1% of argon admixture to helium produces such an effect that argon ions become the main components of the discharge, as they drift with lightweight helium forming a strongly anisotropic velocity distribution function.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films
In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 °C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗