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At least 1,063 records · Page 59
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Heterogeneous recurrence monitoring and control of nonlinear stochastic processes

Recurrence is one of the most common phenomena in natural and engineering systems. Process monitoring of dynamic transitions in nonlinear and nonstationary systems is more concerned with aperiodic recurrences and recurrence variations. However, little has been done to investigate the heterogeneous recurrence variations and link with the objectives of process monitoring and anomaly detection. Notably, nonlinear recurrence methodologies are based on homogeneous recurrences, which treat all recurrence states in the same way as black dots, and non-recurrence is white in recurrence plots. Heterogeneous recurrences are more concerned about the variations of recurrence states in terms of state properties (e.g., values and relative locations) and the evolving dynamics (e.g., sequential state transitions). This paper presents a novel approach of heterogeneous recurrence analysis that utilizes a new fractal representation to delineate heterogeneous recurrence states in multiple scales, including the recurrences of both single states and multi-state sequences. Further, we developed a new set of heterogeneous recurrence quantifiers that are extracted from fractal representation in the transformed space. To that end, we integrated multivariate statistical control charts with heterogeneous recurrence analysis to simultaneously monitor two or more related quantifiers. Experimental results on nonlinear stochastic processes show that the proposed approach not only captures heterogeneous recurrence patterns in the fractal representation but also effectively monitors the changes in the dynamics of a complex system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Pairing preferences of the model mono-valence mono-atomic ions investigated by molecular simulation

We carried out a series of potential of mean force calculations to study the pairing preferences of a series of model mono-atomic 1:1 ions with evenly varied sizes. The probabilities of forming the contact ion pair (CIP) and the single water separate ion pair (SIP) were presented in the two-dimensional plots with respect to the ion sizes. The pairing preferences reflected in these plots largely agree with the empirical rule of matching ion sizes in the small and big size regions. In the region that the ion sizes are close to the size of the water molecule; however, a significant deviation from this conventional rule is observed. Our further analysis indicated that this deviation originates from the competition between CIP and the water bridging SIP state. The competition is mainly an enthalpy modulated phenomenon in which the existing of the water bridging plays a significant role.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

High-resolution X-ray diffraction analysis of Al{sub x}Ga{sub 1−x}N/In{sub x}Ga{sub 1−x}N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

The work presents a comparative study on the effects of In incorporation in the channel layer of AlGaN/GaN type-II heterostructures grown on c-plane sapphire by Plasma Assisted Molecular Beam Epitaxy. The structural characterizations of these samples were performed by High-Resolution X-Ray Diffraction (HRXRD), X-ray Reflectivity (XRR), Field Emission Scanning Electron Microscopy, and High Resolution Transmission Electron Microscopy. The two-dimensional electron gas in the AlGaN/GaN and AlGaN/InGaN interface was analyzed by electrochemical capacitance voltage and compared with theoretical results based on self-consistent solution of Schördinger–Poisson equations. The carrier profile shows enhanced confinement in InGaN channel (1.4393 × 10{sup 13} cm{sup −2} compared to 1.096 × 10{sup 13} cm{sup −2} in GaN). On the basis of HRXRD measurements, the stress-strain of the layers was examined. The c- and a-lattice parameters of the epilayers as well as in-plane and out-of plane strains were determined from the ω-2θ for symmetric scan and ω-Xθ (X represents the coupling coefficient) for asymmetric scan. Strain, tilt, and correlation lengths were calculated from Williamson–Hall plots, whereas stress was examined from modified plot of the same data assuming Uniform Stress Deformation Model. Moreover, the twist angle was measured from skew symmetric scan of (102), (103), and (105) plane along with (002) symmetric plane. The composition and strain/relaxation state of the epilayers were observed in detail by reciprocal space mapping (RSM). The symmetric (002) triple axis RSM and asymmetric (105 and 114) double axis RSM of grazing incidence and exit geometry were carried out on each sample. The defect density was measured from HRXRD curves of skew symmetric (002) and (102) reflection plane. The Al and In mole fraction and strain states of the layers were calculated by fitting the experimental curves with computer simulations and compared with theoretical findings based on elastic theory. The thicknesses of the layers and roughness of the interfaces were measured from simulation of the nominal structure by fitting with XRR experimental curves. The HRXRD measured thicknesses of the layers were further confirmed by cross sectional electron micrographs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Cole-cole analysis and electrical conduction mechanism of N{sup +} implanted polycarbonate

In this paper, we present the analysis of the dielectric (dielectric constant, dielectric loss, a.c. conductivity) and electrical properties (I–V characteristics) of pristine and nitrogen ion implanted polycarbonate. The samples of polycarbonate were implanted with 100 keV N{sup +} ions with fluence ranging from 1 × 10{sup 15} to 1 × 10{sup 17} ions cm{sup −2}. The dielectric measurements of these samples were performed in the frequency range of 100 kHz to 100 MHz. It has been observed that dielectric constant decreases whereas dielectric loss and a.c. conductivity increases with increasing ion fluence. An analysis of real and imaginary parts of dielectric permittivity has been elucidated using Cole-Cole plot of the complex permittivity. With the help of Cole-Cole plot, we determined the values of static dielectric constant (ε{sub s}), optical dielectric constant (ε{sub ∞}), spreading factor (α), average relaxation time (τ{sub 0}), and molecular relaxation time (τ). The I–V characteristics were studied using Keithley (6517) electrometer. The electrical conduction behaviour of pristine and implanted polycarbonate specimens has been explained using various models of conduction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Nonlinear instability of an Oldroyd elastico–viscous magnetic nanofluid saturated in a porous medium

Through viscoelastic potential theory, a Kelvin-Helmholtz instability of two semi-infinite fluid layers, of Oldroydian viscoelastic magnetic nanofluids (MNF), is investigated. The system is saturated by porous medium through two semi-infinite fluid layers. The Oldroyd B model is utilized to describe the rheological behavior of viscoelastic MNF. The system is influenced by uniform oblique magnetic field that acts at the surface of separation. The model is used for the MNF incorporated the effects of uniform basic streaming and viscoelasticity. Therefore, a mathematical simplification must be considered. A linear stability analysis, based upon the normal modes analysis, is utilized to find out the solutions of the equations of motion. The onset criterion of stability is derived; analytically and graphs have been plotted by giving numerical values to the various parameters. These graphs depict the stability characteristics. Regions of stability and instability are identified and discussed in some depth. Some previous studies are recovered upon appropriate data choices. The stability criterion in case of ignoring the relaxation stress times is also derived. To relax the mathematical manipulation of the nonlinear approach, the linearity of the equations of motion is taken into account in correspondence with the nonlinear boundary conditions. Taylor's theory is adopted to expand the governing nonlinear characteristic equation according to of the multiple time scales technique. This analysis leads to the well-known Ginzburg–Landau equation, which governs the stability criteria. The stability criteria are achieved theoretically. To simplify the mathematical manipulation, a special case is considered to achieve the numerical estimations. The influence of orientation of the magnetic fields on the stability configuration, in linear as well as nonlinear approaches, makes a dual role for the magnetic field strength in the stability graphs. Stability diagram is plotted for different sets of physical parameters. A new stability as well as instability region, in the parameter space, appears due to the nonlinear effects.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Investigating the plasma parameters of an Ar/O{sub 2} discharge during the sputtering of Al targets in an inverted cylindrical magnetron

The plasma parameters and reaction kinetics in an inverted cylindrical magnetron chamber have been studied with an energy resolved mass spectrometer during the sputtering of aluminum targets in an Ar/O{sub 2} discharge. Mixtures of argon and oxygen were studied as a function of oxygen percentage (0%–90%) in the discharge. The plasma was powered at 4 kW and 40 kHz at a process pressure of 5 mTorr. Al{sup +}, Al, AlO, AlO{sup +}, O{sub 2}{sup +}, O{sup +}, Al{sub 2}O{sup +}, and Ar{sup +} were among the species detected in the discharge. The deposition rate of the deposited thin film decreased with increasing oxygen percentage in the discharge and results indicated that the pure gamma-alumina was obtained when the percentage of oxygen was approximately 70%. The linear plot of energy distributions of the positively charged film forming species changed from a single peak to a bimodal distribution as the percentage of oxygen exceeds 65%. In a log plot, however, the distributions showed multiple peaks ranging from 2 eV to 78 eV. Fluctuations of about 1 eV in peak energies were observed.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Magnetocaloric properties and critical behavior of high relative cooling power FeNiB nanoparticles

Low cost magnetocaloric nanomaterials have attracted considerable attention for energy efficient applications. We report a very high relative cooling power (RCP) in a study of the magnetocaloric effect in quenched FeNiB nanoparticles. RCP increases from 89.8 to 640 J kg{sup −1} for a field change of 1 and 5 T, respectively, these values are the largest for rare earth free iron based magnetocaloric nanomaterials. To investigate the magnetocaloric behavior around the Curie temperature (T{sub C}), the critical behavior of these quenched nanoparticles was studied. Detailed analysis of the magnetic phase transition using the modified Arrott plot, Kouvel-Fisher method, and critical isotherm plots yields critical exponents of β = 0.364, γ = 1.319, δ = 4.623, and α = −0.055, which are close to the theoretical exponents obtained from the 3D-Heisenberg model. Our results indicate that these FeNiB nanoparticles are potential candidates for magnetocaloric fluid based heat pumps and low grade waste heat recovery.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Coexistence of colossal stress and texture gradients in sputter deposited nanocrystalline ultra-thin metal films

This paper demonstrates experimentally that ultra-thin, nanocrystalline films can exhibit coexisting colossal stress and texture depth gradients. Their quantitative determination is possible by X-ray diffraction experiments. Whereas a uniform texture by itself is known to generally cause curvature in so-called sin{sup 2}ψ plots, it is shown that the combined action of texture and stress gradients provides a separate source of curvature in sin{sup 2}ψ plots (i.e., even in cases where a uniform texture does not induce such curvature). On this basis, the texture and stress depth profiles of a nanocrystalline, ultra-thin (50 nm) tungsten film could be determined.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures

GaN nanorods were grown by plasma assisted molecular beam epitaxy on intrinsic Si (111) substrates which were characterized by powder X-ray diffraction, field emission scanning electron microscopy, and photoluminescence. The current–voltage characteristics of the GaN nanorods on Si (111) heterojunction were obtained from 138 to 493 K which showed the inverted rectification behavior. The I-V characteristics were analyzed in terms of thermionic emission model. The temperature variation of the apparent barrier height and ideality factor along with the non-linearity of the activation energy plot indicated the presence of lateral inhomogeneities in the barrier height. The observed two temperature regimes in Richardson's plot could be well explained by assuming two separate Gaussian distribution of the barrier heights.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Microstructural and ionic transport studies of hydrothermally synthesized lanthanum fluoride nanoparticles

This article presents the structural and transport characteristics of hydrothermally synthesized LaF{sub 3} nanoparticles with an average crystallite size of 35nm. The phase formation of the material is confirmed by both X-ray diffraction and transmission electron microscopy techniques. In addition, phase purity of the LaF{sub 3} nanoparticles is corroborated by micro-Raman spectroscopy studies. The complex impedance plots at different temperatures reveal that the conductivity is predominantly due to the intrinsic bulk grains and the conductivity relaxation is non-Debye in nature. The frequency variation of conductivity exhibits dispersion at higher frequencies that can be explained with the frame work of Almond-West formalism. The conduction process is controlled by the mobility of the charge carriers and the charge of transport of mobile fluoride ions occur through hopping mechanism. The scaling behavior of both frequency dependence of conductivity and complex impedance plots at different temperatures confirm that the relaxation mechanism of the mobile fluoride ions is independent of temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Study of barrier height and trap centers of Au/n-Hg{sub 3}In{sub 2}Te{sub 6} Schottky contacts by current-voltage (I-V) characteristics and deep level transient spectroscopy

The temperature-dependent electrical characteristics of the Au/n-Hg{sub 3}In{sub 2}Te{sub 6} Schottky contact have been studied at the temperature range of 140 K–315 K. Based on the thermionic emission theory, the ideality factor and Schottky barrier height were calculated to decrease and increase from 3.18 to 1.88 and 0.39 eV to 0.5 eV, respectively, when the temperature rose from 140 K to 315 K. This behavior was interpreted by the lateral inhomogeneities of Schottky barrier height at the interface of Au/n-Hg{sub 3}In{sub 2}Te{sub 6} contact, which was shown by the plot of zero-bias barrier heights Φ{sub bo} versus q/2kT. Meanwhile, it was found that the Schottky barrier height with a Gaussian distribution was 0.67 eV and the standard deviation σ{sub 0} was about 0.092 eV, indicating that the uneven distribution of barrier height at the interface region. In addition, the mean value of Φ{sup ¯}{sub b0} and modified Richardson constant was determined to be 0.723 eV and 62.8 A/cm{sup 2}K{sup 2} from the slope and intercept of the ln(I{sub o}/T{sup 2}) – (qσ{sub 0}{sup 2}/2k{sup 2}T{sup 2}) versus q/kT plot, respectively. Finally, two electron trap centers were observed at the interface of Au/n-Hg{sub 3}In{sub 2}Te{sub 6} Schottky contact by means of deep level transient spectroscopy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Dynamics of neutrals and ions in an ultrafast laser produced Zn plasma

Optical time of flight dynamics of neutrals and ions in an ultrafast laser produced zinc plasma generated by irradiating a solid zinc target using 100 fs laser pulses is investigated. An acceleration of ions is observed which arises from internal Coulomb forces acting between charged species in the plasma. Some of the fast ions recombine with electrons in the plasma and generate fast neutrals. Plasma plume imaging performed at various ambient pressures indicates adiabatic expansion at lower pressures and plume front deceleration at higher pressures: at lower pressures the plume front-time (R-t) plot displays a linear expansion, shock wave model fits to the data at 5 Torr and at higher pressures the data fits better to the drag model. Furthermore, around an intermediate pressure of 10 Torr, the R-t plot fits to the shock wave model at earlier stages of plasma expansion, while it fits to the drag model at the later stages. These investigations provide relevant information on the acceleration of ions and neutrals in an expanding zinc plasma plume produced by ultrafast laser pulses.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Electrical properties and dielectric spectroscopy of Ar{sup +} implanted polycarbonate

The aim of the present paper is to study the effect of argon ion implantation on electrical and dielectric properties of polycarbonate. Specimens were implanted with 130 keV Ar{sup +} ions in the fluence ranging from 1×10{sup 14} to 1×10{sup 16} ions cm{sup −2}. The beam current used was ∼0.40 µA cm{sup −2}. The electrical conduction behaviour of virgin and Ar{sup +} implanted polycarbonate specimens have been studied through current-voltage (I-V characteristic) measurements. It has been observed that after implantation conductivity increases with increasing ion fluence. The dielectric spectroscopy of these specimens has been done in the frequency range of 100 kHz-100 MHz. Relaxation processes were studied by Cole-Cole plot of complex permittivity (real part of complex permittivity, ε′ vs. imaginary part of complex permittivity, ε″). The Cole-Cole plots have also been used to determine static dielectric constant (ε{sub s}), optical dielectric constant (ε{sub ∞}), spreading factor (α), average relaxation time (τ{sub 0}) and molecular relaxation time (τ). The dielectric behaviour has been found to be significantly affected due to Ar{sup +} implantation. The possible correlation between this behaviour and the changes induced by the implantation has been discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces

We have grown InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy and studied the temperature dependent electrical transport characteristics. The barrier height (φ{sub b}) and the ideally factor (η) estimated using thermionic emission model were found to be temperature dependent. The conventional Richardson plot of ln(J{sub s}/T{sup 2}) versus 1/kT showed two temperature regions (region-I: 400–500 K and region-II: 200–350 K) and it provides Richardson constants (A{sup ∗}) which are much lower than the theoretical value of GaN. The observed variation in the barrier height and the presence of two temperature regions were attributed to spatial barrier inhomogeneities at the heterojunction interface and was explained by assuming a double Gaussian distribution of barrier heights with mean barrier height values 1.61 and 1.21 eV with standard deviation (σ{sub s}{sup 2}) of 0.044 and 0.022 V, respectively. The modified Richardson plot of ln(J{sub s}/T{sup 2}) − (q{sup 2}σ{sub s}{sup 2}/2k{sup 2}T{sup 2}) versus 1/kT for two temperature regions gave mean barrier height values as 1.61 eV and 1.22 eV with Richardson constants (A{sup ∗}) values 25.5 Acm{sup −2}K{sup −2} and 43.9 Acm{sup −2}K{sup −2}, respectively, which are very close to the theoretical value. The observed barrier height inhomogeneities were interpreted on the basis of the existence of a double Gaussian distribution of barrier heights at the interface.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Theoretical investigation on structural and electronic properties of PdO{sub 2}

Theoretical studies on rutile type Palladium Dioxide were carried out with the aim of analyzing structural and electronic properties at ambient condition using the first principle calculation based on density functional theory. Within the framework of density functional theory, we used full potential linearized augmented plane wave method(FP-LAPW) in Wien 2k code. The exchange and correlation effect is treated with generalized gradient approximation (GGA) using the Perdew, Burke and Eruzeroff form. The charge density plots, density of states and band structure are plotted and discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Comparison of the order of magnetic phase transitions in several magnetocaloric materials using the rescaled universal curve, Banerjee and mean field theory criteria

Magnetocaloric materials with second order phase transition near the Curie temperature can be described by critical phenomena theory. In this theory, scaling, universality, and renormalization are key concepts from which several phase transition order criteria are derived. In this work, the rescaled universal curve, Banerjee and mean field theory criteria were used to make a comparison for several magnetocaloric materials including pure Gd, SmCo{sub 1.8}Fe{sub 0.2}, MnFeP{sub 0.46}As{sub 0.54}, and La{sub 0.7}Ca{sub 0.15}Sr{sub 0.15}MnO{sub 3}. Pure Gd, SmCo{sub 1.8}Fe{sub 0.2}, and La{sub 0.7}Ca{sub 0.15}Sr{sub 0.15}MnO{sub 3} present a collapse of the rescaled magnetic entropy change curves into a universal curve, which indicates a second order phase transition; applying Banerjee criterion to H/σ vs σ{sup 2} Arrot plots and the mean field theory relation |ΔS{sub M}| ∝ (μ{sub 0}H/T{sub c}){sup 2/3} for the same materials also determines a second order phase transition. However, in the MnFeP{sub 0.46}As{sub 0.54} sample, the Banerjee criterion applied to the H/σ vs σ{sup 2} Arrot plot indicates a first order magnetic phase transition, while the mean field theory prediction for a second order phase transition, |ΔS{sub M}| ∝ (μ{sub 0}H/T{sub c}){sup 2/3}, describes a second order behavior. Also, a mixture of first and second order behavior was indicated by the rescaled universal curve criterion. The diverse results obtained for each criterion in MnFeP{sub 0.46}As{sub 0.54} are apparently related to the magnetoelastic effect and to the simultaneous presence of weak and strong magnetism in Fe (3f) and Mn (3g) alternate atomic layers, respectively. The simultaneous application of the universal curve, the Banerjee and the mean field theory criteria has allowed a better understanding about the nature of the order of the phase transitions in different magnetocaloric materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Photo-assisted intersystem crossing: The predominant triplet formation mechanism in some isolated polycyclic aromatic molecules excited with pulsed lasers

Naphthalene, anthracene, and phenanthrene are shown to have very long-lived triplet lifetimes when the isolated molecules are excited with nanosecond pulsed lasers resonant with the lowest singlet state. For naphthalene, triplet state populations are created only during the laser pulse, excluding the possibility of normal intersystem crossing at the one photon level, and all molecules have triplet lifetimes greater than hundreds of microseconds, similar to the behavior previously reported for phenylacetylene. Although containing 7–12 thousand cm{sup −1} of vibrational energy, the triplet molecules have ionization thresholds appropriate to vibrationless T{sub 1} states. The laser power dependences (slopes of log-log power plots) of the excited singlet and triplet populations are about 0.7 for naphthalene and about 0.5 for anthracene. Kinetic modeling of the power dependences successfully reproduces the experimental results and suggests that the triplet formation mechanism involves an enhanced spin orbit coupling caused by sigma character in states at the 2-photon level. Symmetry adapted cluster-configuration interaction calculations produced excited state absorption spectra to provide guidance for estimating kinetic rates and the sigma character present in higher electronic states. It is concluded that higher excited state populations are significant when larger molecules are excited with pulsed lasers and need to be taken into account whenever discussing the molecular photodynamics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Characteristics of microdomains and microdomain patterns recorded by electron beam irradiation on Y-cut LiNbO{sub 3} crystals

We present the results of investigations of planar domain patterns (isolated domains and domain gratings) fabricated by irradiation of the nonpolar Y-surface of LiNbO{sub 3} crystals by an electron beam (EB) incident normally onto the surface. The EB recorded domains were investigated using atomic force microscopy, confocal second harmonic generation microscopy, and chemical etching as an auxiliary method. The dependence of the domain characteristics on irradiation conditions (acceleration voltage U, EB current I, and irradiation time t{sub irr}) were determined. The length L{sub d} of both isolated domains and domain gratings along the polar axis Z grows linearly with t{sub irr} (at U, I = const) with no tending to saturation. The plots L{sub d}(t{sub irr}) obtained for U = 10 and 15 kV are practically identical, whereas the values of L{sub d} for U = 5 kV are essentially lower. The domain thickness T{sub d} along the Y-direction, i.e., the depth of the switched layer grows with acceleration voltage U. These results are discussed in terms of space-charge fields formation arising under EB irradiation of insulators. The linearity of L{sub d}(t{sub irr}) is accounted for by the frontal domain growth via the viscous friction law. The experimental dependence of T{sub d} on U supports the suggestion that the domain thickness is determined by the penetration depth R{sub e} of primary electrons, which in turn is governed by U. The difference in L{sub d}(t{sub irr}) plots for different U is accounted for by different electron emission σ. Indirect evidences of a defect structure modification in a thin surface layer with respect to the crystal bulk are obtained.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗