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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,063 records · Page 59
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Investigation of vertical GaN-on-GaN p – n diode with regrown p -GaN for operation in Venus and other extreme environments

This Letter reports the performance of vertical GaN-on-GaN p–n diodes with etch-then-regrown p-GaN after exposure to a simulated Venus environment (460 °C, ∼94 bar, containing CO2/N2/SO2 etc., atmosphere) for over 10 days, and compared them to the performance of GaN p–n diodes without the etch-then-regrow process. After the above-mentioned Venus test, temperature-dependent I–V and microscopy investigation were conducted to study the robustness of etch-then-regrow p-GaN and vertical GaN p–n diodes under harsh environments and operation up to 500 °C. p-electrode degradation is found to be the main issue of the device's performance. This is the highest temperature at which such characterization has been conducted for vertical GaN p–n diodes, therefore establishing a critical reference for the development of p-GaN regrown and vertical GaN-based electronics for extreme environments.

Physics↗
DOE OSTI2024

Effects of structural defects on optical properties of In x Ga 1-x N layers and quantum wells

This review concentrates on the microstructure of In x Ga 1-x N layers and quantum wells (QWs) in relation to their optical properties. The microstructure of In x Ga 1-x N, with a constant In(x) concentration, shifts with layer thickness. Only layers below 100 nm for x = 0.1 are nearly defect-free. A photoluminescence peak is observed at 405 nm, in line with ~10% In, suggesting band-edge luminescence. Layers with greater thickness and In content present a corrugated surface with numerous structural defects, including V-defects, causing redshifts and multi-peaks in photoluminescence up to 490 nm. These defects, resembling those in GaN, lead to a corrugated sample surface. Atomic force microscopy shows a 3.7-fold larger corrugation in samples with 20 QWs compared to those with 5 QWs measured on 2 × 2 μm 2 areas. Like in GaN, dual growth on different crystallographic planes results in varied QW thicknesses, influencing optical traits of devices made from In x Ga 1-x N layers. The purpose of this review and the chosen subject is to highlight the significant contribution of Wladek Walukiewicz and his group to the current research on the properties of In x Ga 1-x N, which are crucial alloys in the field of optoelectronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Ultrawide bandgap heterojunction p–n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current–voltage characteristics show a turn-on voltage of Vbi≈5.5 V, a minimum room temperature ideality factor of η≈1.63, and more than 12 orders of current modulation at room temperature. A stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300 °C. The one-sided n+–p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance–voltage profile. The measured average mobile hole density is p∼5.7×1017 cm−3, in close agreement with what is theoretically expected from distributed polarization doping. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n+ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization doping enables ultrawide bandgap semiconductor heterojunction p–n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments.

Physics↗
DOE OSTI2024

High-n Rydberg transition spectroscopy for heavy impurity transport studies in W7-X (invited)

Here, we present a novel spectroscopy approach to investigate impurity transport by analyzing line-radiation following high-n Rydberg transitions. While high-n Rydberg states of impurity ions are unlikely to be populated via impact excitation, they can be accessed by charge exchange (CX) reactions along the neutral beams in high-temperature plasmas. Hence, localized radiation of highly ionized impurities, free of passive contributions, can be observed at multiple wavelengths in the visible range. For the analysis and modeling of the observed Rydberg transitions, a technique for calculating effective emission coefficients is presented that can well reproduce the energy dependence seen in datasets available on the OPEN-ADAS database. By using the rate coefficients and comparing modeling results with the new high-n Rydberg CX measurements, impurity transport coefficients are determined with well-documented 2σ confidence intervals for the first time. This demonstrates that high-n Rydberg spectroscopy provides important constraints on the determination of impurity transport coefficients. By additionally considering Bolometer measurements, which provide constraints on the overall impurity emissivity and, therefore, impurity densities, error bars can be reduced even further.

Instruments & Instrumentation↗
DOE OSTI2025

Stability, growth, and doping of In 2 (Si, Ge) 2 O 7 : Promising n -type wide-bandgap semiconductors

In this paper, we investigate, computationally and experimentally, the phase stability, electronic structure properties, and the propensity for n-type doping of In 2 X 2 O 7 (X = Si, Ge) ternary oxides. This family of materials contains promising novel wide-gap semiconductors based on their estimated high n-type Baliga figures of merit and acceptable thermal conductivity for power electronics applications. Here, we predict that both In 2 Si 2 O 7 and In 2 Ge 2 O 7 are n-type dopable, with Zr providing between 10 16 and above 10 21 cm −3 net donor concentrations under O-poor conditions, depending on the chemistry, structure (ground-state thortveitite or high-pressure pyrochlore), and synthesis temperature. To verify our predictions, we synthesize Zr-doped In 2 Ge 2 O 7 in the thortveitite structure and measure its electrical properties. Initial thin-film growth and annealing lead to polycrystalline thin films with bandgaps over 4 eV and confirm Zr doping predictions by achieving electron concentrations at 10 14 –10 16 cm −3 even under O-rich conditions. While future epitaxial growth development is still needed, this study establishes In 2 X 2 O 7 as promising n-type wide-gap semiconductors for power electronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Optimization of the N ∥ Upshift in the DIII-D high field side lower hybrid current drive experiment

High field side lower hybrid current drive (LHCD) is one potential candidate for efficient non-inductive current drive in tokamak power plants, and the first test of this technology will occur on the DIII-D tokamak during the 2024 campaign. Previous LFS launch experiments operated in the multi-pass regime and relied on scrape-off layer interactions to close the spectral gap. In the DIII-D experiment, single-pass damping is achievable via an upshift in the parallel refractive index N ∥ caused by mode converting twice (slow → fast → slow). This mode conversion affects the ray trajectories and can lead to enhanced N ∥ upshift depending on where mode conversion occurs. Compared to multi-pass absorption experiments, the optimization of launched N ∥ and plasma parameters can be counter-intuitive: increased density may increase efficiency and smaller N ∥,launch tend to damp closer to the separatrix. A hard x-ray camera installed to measure the bremsstrahlung (50–250 keV) radiation from LHCD-generated fast electrons is capable of verifying the trends reporting in this paper through comparison to the ray-tracing/Fokker–Planck codes GENRAY/CQL3D.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Properties of Nb x Ti (1–x) N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits

Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of advanced lithography are instrumental in facilitating mature CMOS processes, ensuring uniformity, and optimizing the yield. Here, this study explores the properties of Nb x Ti (1–x) N films fabricated by magnetron DC sputtering on 300 mm Si wafers. As a promising alternative to traditional Nb in device manufacturing, Nb x Ti (1–x) N offers numerous advantages, including enhanced stability and scalability to smaller dimensions, in both processing and design. As a ternary material, Nb x Ti (1–x) N allows engineering material parameters by changing deposition conditions. The engineered properties can be used to modulate device parameters through the stack and mitigate failure modes. We report characterization of Nb x Ti (1–x) N films at less than 2% thickness variability, 2.4% T c variability and 3% composition variability. Film resistivity (140–375 Ωcm) shows a strong correlation with the film oxygen content, while the critical temperature T c (4.6 K–14.1 K) is strongly affected by film stoichiometry and its microstructure has only a moderate effect on modifying T c . Our results offer insights about the interplay between film stoichiometry, film microstructure and critical temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Impurity transport study based on measurement of visible wavelength high-n charge exchange transitions at W7-X

Abstract A recently installed high-speed charge exchange diagnostic at the W7-X stellarator has been used to identify several high-n Rydberg emission lines near 500 nm following impurity injections. The wavelengths of observed high-n Rydberg transitions are independent of the impurity species and originate from ions with ionization states ranging from 14+ to 45+ suggesting that this approach can be applied to a variety of heavy impurities. Moreover, little to no passive signal is observed since the high-n energy levels are unlikely to be populated by electron impact excitation. The combination of the newly developed diagnostic and the observation of high-n Rydberg states provides spatially resolved, high-speed measurements of multiple charge states which are analyzed in a Bayesian inference framework to determine both impurity diffusion and convection profiles. Measurements from the 2023 experimental campaign conclusively show high diffusion and an inward pinch in the core, well above predictions by neoclassical theory.

Physics↗
DOE OSTI2026

MARS-Q modeling of low- n resistive kink-peeling modes and edge harmonic oscillations in DIII-D

Linear and quasilinear magnetohydrodynamic (MHD) modeling is carried out for two DIII-D discharges that both featured a transition from quiescent H-mode (QH) to wide-pedestal QH (WPQH). The MHD perturbations, associated with the edge harmonic oscillations (EHOs) observed during the QH-phase in both discharges, are identified as low-n (n is the toroidal mode number) resistive kink-peeling instabilities, with the ideal MHD counterpart remaining stable. The quasilinear model successfully simulates EHO-like perturbations during the QH phase in both discharges, confirming the experimental observations. A less intuitive finding is the EHO-like behavior involving the n = 2 perturbation, simulated for one of the discharges during the WPQH-phase. This result, while consistent with experimental observations, is obtained despite the fact that the initial perturbation is linearly stable. The eventual growth of the perturbation is solely due to nonlinear interaction between the MHD perturbation and the plasma toroidal flow. The occurrence of the EHO-like perturbation during the WPQH-phase is found to be sensitive to the initial profile of the plasma edge rotation. For DIII-D plasmas considered, the neoclassical toroidal viscosity, generated by three-dimensional low-n perturbations, is found to play a dominant role in modifying the edge flow during EHOs.

EHO↗
DOE OSTI2020

Mechanistic insights from structure of Mycobacterium smegmatis topoisomerase I with ssDNA bound to both N- and C-terminal domains

Abstract Type IA topoisomerases interact with G-strand and T-strand ssDNA to regulate DNA topology. However, simultaneous binding of two ssDNA segments to a type IA topoisomerase has not been observed previously. We report here the crystal structure of a type IA topoisomerase with ssDNA segments bound in opposite polarity to the N- and C-terminal domains. Titration of small ssDNA oligonucleotides to Mycobacterium smegmatis topoisomerase I with progressive C-terminal deletions showed that the C-terminal region has higher affinity for ssDNA than the N-terminal active site. This allows the C-terminal domains to capture one strand of underwound negatively supercoiled DNA substrate first and position the N-terminal domains to bind and cleave the opposite strand in the relaxation reaction. Efficiency of negative supercoiling relaxation increases with the number of domains that bind ssDNA primarily with conserved aromatic residues and possibly with assistance from polar/basic residues. A comparison of bacterial topoisomerase I structures showed that a conserved transesterification unit (N-terminal toroid structure) for cutting and rejoining of a ssDNA strand can be combined with two different types of C-terminal ssDNA binding domains to form diverse bacterial topoisomerase I enzymes that are highly efficient in their physiological role of preventing excess negative supercoiling in the genome.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2026

High-performance nanodevices based on WGe 2⁢ N 4 monolayer

Two-dimensional (2D) 𝑀⁢𝐴 2 ⁢𝑍 4 -family monolayers (MLs) have emerged as promising semiconductors due to their element tunability and rich electronic and optoelectronic properties. In this work, using first-principles calculations, we investigate the electronic, mechanical, transport, and optoelectronic properties of WGe 2⁢ N 4 ML with a small indirect bandgap. Various nanodevices based on WGe 2 ⁢N 4 ML are studied, including pn-junction diodes, pin-junction field-effect transistors (FETs), and phototransistors. The present results reveal that the WGe 2⁢ N 4 ML exhibits high rigidity, thermal stability, and remarkable light absorption. These nanodevices demonstrate excellent performance: (1) the pn-junction diode shows a high rectification ratio and a near-Shockley-limit ideality factor, (2) the pin-junction FET exhibits significant gate voltage modulation capability with subthreshold swing as low as 71 mV/dec (close to the theoretical limit calculated based on the Boltzmann distribution), and (3) the phototransistor displays strong optoelectronic responses in the visible and ultraviolet regions. Furthermore, these findings establish WGe 2 ⁢N 4 ML as a versatile platform for developing high-performance, multifunctional nanoelectronic and optoelectronic devices, significantly expanding the application potential of 𝑀⁢𝐴 2⁢ 𝑍 4 -family materials.

2-dimensional systems↗
DOE OSTI2020

Spatial BCS-BEC crossover in superconducting $\textit{p–n}$ junctions

Here, we present a theory of superconducting $\textit{p–n}$ junctions. To this end, we consider a two band model of doped bulk semiconductors with attractive interactions between the charge carriers and derive the superconducting order parameter, the quasiparticle density of states, and the chemical potential as a function of the semiconductor gap $Δ_0$ and the doping level ε. We verify previous results for the quantum phase diagram for a system with constant density of states in the conduction and valence band, which show BCS-superconductor to Bose-Einstein-condensation (BEC) and BEC-to-insulator transitions as a function of doping level and the size of the band gap. Then, we extend this formalism to a density of states which is more realistic for 3D systems and derive the corresponding quantum phase diagram, where we find that a BEC phase can only exist for small band gaps $Δ_0 < Δ ^{\ast}_0$. For larger band gaps, we find rather a direct transition from an insulator to a BCS phase. Next, we apply this theory to study the properties of superconducting $\textit{p–n}$ junctions. We derive the spatial variation of the superconducting order parameter along the $\textit{p–n}$ junction. As the potential difference across the junction leads to energy band bending, we find a spatial crossover between a BCS and BEC condensate, as the density of charge carriers changes across the $\textit{p–n}$ junction. For the two-dimensional system, we find two possible regimes, when the bulk is in a BCS phase, a BCS-BEC-BCS junction with a single BEC layer in the space charge region, and a BCS-BEC-I-BEC-BCS junction with two layers of BEC condensates separated by an insulating layer. In three dimensions we find that there can also be a conventional BCS-I-BCS junction for semiconductors with band gaps exceeding $Δ^{\ast}_0$. Thus, we find that there can be BEC layers in the well controlled setting of doped semiconductors, where the doping level can be varied to change and control the thickness of BEC and insulator layers, making Bose-Einstein condensates thereby possibly accessible to experimental transport and optical studies in solid-state materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Magnetic structure of Fe 16 N 2 determined by polarized neutron diffraction on thin-film samples

Strain-free Fe 16 N 2 thin films were obtained on MgO (001) single-crystal substrates with Cr seed layers. Additionally, x-ray diffraction and transmission electron microscopy confirmed that the film is textured in all three spatial directions with crystallographic orientation determined by epitaxial constraints from the substrate. Average grain size was estimated to be in the range of tens of nanometers. Ten pieces of 40-nm-thick Fe 16 N 2 thin-film samples were stacked together for half-polarized neutron diffraction study at room temperature. A total of six reflections were usable, from which the magnetic structure of Fe 16 N 2 was determined and compared to existing models. Contrary to most electronic structure calculations, the present results suggest that the magnetic moment of Fe atoms at the 8h site is large and larger than that of the 4d site. Our results support the giant magnetization of Fe 16 N 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2021

Emergence of unconventional spin glass-like state in κ–(ET) 2 Cu[N(CN) 2 ]Cl by introducing weak randomness

Recently, Urai et al. reported that an antiferromagnetic long-range-ordered state in κ-(ET) 2 Cu[N(CN) 2 ]Cl changes into a quantum spin liquid via an unconventional spin glass-like state as randomness is introduced by x-ray irradiation. In this work, we focused on the spin glass-like state and conducted a detailed investigation into it using 13 C-NMR measurements on 150-h x-ray-irradiated κ-(ET) 2 Cu[N(CN) 2 ]Cl. We found that the spin glass-like state is composed of two components: the major component inherits the spin structure of nonirradiated κ-(ET) 2 Cu[N(CN) 2 ]Cl, whereas the minor component differs from that of nonirradiated κ-(ET) 2 Cu[N(CN) 2 ]Cl. We also found that in the spin glass-like state, spin moments fluctuate very slowly around stable directions even at low temperatures, which is very likely related to the Griffiths physics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Nonstatistical fluctuations in the 35 Cl(n,p) 35 S reaction cross section at fast-neutron energies from 0.6 to 6 MeV

The lack of experimental data on the 35 Cl(n,p) 35 S reaction above 100 keV has led to nuclear data evaluations that are relatively unconstrained at fast neutron energies. As a result, efforts to explore, develop, and potentially certify next generation reactor designs that incorporate chloride salts as a coolant material have been hindered. Here, we report partial cross section data for the 35 Cl(n,p) 35 S and 35 Cl(n,α) 32 P reactions at incident neutron energies between 0.6 MeV and 6 MeV. The measurement was performed using the pulsed beam of neutrons at the unmoderated WNR spallation neutron source at the Los Alamos Neutron Science Center, with the outgoing charged particles detected by the LENZ experimental setup, consisting of annular silicon detectors. Nonstatistical fluctuations in the 35 Cl(n,p 0 ) cross section were observed up to around 3 MeV, and the magnitude of the cross section was systematically lower than all available data evaluations at energies above 1 MeV. Modifications to the ENDF/B-VIII.0 data evaluation are suggested to better reproduce the energy averaged experimental data.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

First direct measurement of the 13 $\mathrm{N(α, ρ)}$ 16 $\mathrm{O}$ reaction relevant for core-collapse supernovae nucleosynthesis

We report that understanding the explosion mechanism of a core-collapse supernova (CCSN) is important to accurately model CCSN scenarios for different progenitor stars using model-observation comparisons. The uncertainties of various nuclear reaction rates relevant for CCSN scenarios strongly affect the accuracy of these stellar models. Out of these reactions, the 13 N(α, p) 16 O reaction has been found to affect various stages of a CCSN at varying temperatures. This work presents the first direct measurement of the 13 N(α, p) 16 O reaction performed using a 34.6 MeV beam of radioactive 13 N ions and the active-target detector MUSIC (MUlti-Sampling Ionization Chamber) at Argonne National Laboratory. The resulting total 13 N(α, p) 16 O reaction cross sections from this measurement in the center-of-mass energy range of 3.26 - 6.02 MeV are presented and compared with calculations using the Hauser-Feshbach formalism. Uncertainties in the reaction rate have been dramatically reduced at CCSN temperatures.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2023

Absolute cross section of the C 12 ( p , γ ) N 13 reaction

Solar neutrino measurements have recently reached a level of sensitivity such that CNO fluxes can now be experimentally determined. While these first measurements are still only sensitive to the higher energy neutrinos resulting from the β + decays of 15 Ο produced by the 14 Ν ⁡( p ,$\gamma$)⁢ 15 O reaction, future measurements will work towards detection of neutrinos from the β + decay of 13 N from the 12 C ⁡( p ,$\gamma$)⁢ 13 N reaction. Here, this paper reports on a recent measurement of the 12 C ⁡( p ,$\gamma$)⁢ 13 N reaction covering a broad laboratory energy range between 1.0 and 2.5 MeV. The measurement was made to better determine the overall normalization of the absolute cross section and to explore the interference effects between the two broad, overlapping resonances at proton energies of 0.460 and 1.689 MeV and the direct capture to the ground state of 13 N in the framework of a multichannel R -matrix analysis. This work takes into account previous radiative capture as well as elastic 12 C ( p , p ) 12 C scattering data, making uncertainty estimations using a Bayesian framework, to determine a reliable extrapolation of the low energy S factor towards the stellar energy range of CNO hydrogen burning. These new experimental results, and a detailed investigation of the past literature data, suggest that the resonant component of the cross section should be 30% lower than previously accepted.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Strength measurement of the $E^{lab}_α = 830$ keV resonance in the 22 Ne (α,n) 25 Mg reaction using a stilbene detector

The interplay between the 22 Ne (α,γ) 26 Mg reaction and the competing 22 Ne ⁢(α,n) 25 Mg reaction determines the efficiency of the latter as a neutron source at the temperatures of stellar helium burning. In both cases, the rates are dominated by the α-cluster resonance at 830 keV. This resonance plays a particularly important role in determining the strength of the neutron flux for both the weak and main s process as well as the n process. Recent experimental studies based on transfer reactions suggest that the neutron and γ-ray strengths for this resonance are approximately equal. In this study, the 22 Ne (α,n) 25 Mg resonance strength has been remeasured and found to be similar to the previous direct studies. Finally, this reinforces an 830 keV resonance strength that is approximately a factor of 3 larger for the 22 Ne ⁢(α,n) 25 Mg reaction than for the 22 Ne (α,γ) 26 Mg reaction.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗