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At least 1,063 records · Page 59

Laser induced lifetime degradation in p-type crystalline silicon

Pulsed, green laser irradiation of uncoated p-type silicon leads to a significant reduction of the effective minority carrier lifetime. The reason for the lifetime drop lies in the introduction of recombination centres into the laser melted and recrystallized surface layer, leading to a low local minority carrier lifetime {tau} Almost-Equal-To 10 ns inside this surface layer. The laser treatment introduces the impurities oxygen, carbon and nitrogen into the silicon and further leads to an n-type doping of the surface layer. There are strong indications that these impurities are responsible for the observed n-type doping, as well as the lifetime reduction after irradiation. Both effects are removed by thermal annealing. An estimate shows that the low local lifetime does nevertheless not affect the performance of industrial or contacted selective solar cell emitter structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

III-V-N materials for super high-efficiency multijunction solar cells

We have been studying concentrator multi-junction solar cells under Japanese Innovative Photovoltaic R and D program since FY2008. InGaAsN is one of appropriate materials for 4-or 5-junction solar cell configuration because this material can be lattice-matched to GaAs and Ge substrates. However, present InGaAsN single-junction solar cells have been inefficient because of low minority-carrier lifetime due to N-related recombination centers and low carrier mobility due to alloy scattering and non-homogeneity of N. This paper presents our major results in the understanding of majority and minority carrier traps in GaAsN grown by chemical beam epitaxy and their relationships with the poor electrical properties of the materials.

36 MATERIALS SCIENCE↗

Qualitative comparison of bremsstrahlung X-rays and 800 MeV protons for tomography of urania fuel pellets

We present an assessment of x-rays and proton tomography as tools for studying the time dependence of the development of damage in fuel rods. We also show data taken with existing facilities at Los Alamos National Laboratory that support this assessment. Data on surrogate fuel rods have been taken using the 800 MeV proton radiography (pRad) facility at the Los Alamos Neutron Science Center (LANSCE), and with a 450 keV bremsstrahlung X-ray tomography facility. The proton radiography pRad facility at LANSCE can provide good position resolution (<70 {mu}m has been demonstrate, 20 {mu}m seems feasible with minor changes) for tomography on activated fuel rods. Bremsstrahlung x-rays may be able to provide better than 100 {mu}m resolution but further development of sources, collimation, and detectors is necessary for x-rays to deal with the background radiation for tomography of activated fuel rods.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of purity, edge length, and growth area on field emission of multi-walled carbon nanotube emitter arrays

Present report aims to study the effect of purity, edge length, and growth area on field emission of patterned carbon nanotube (CNT) emitter arrays. For development of four CNT emitter arrays (CEAs), low resistively silicon substrates were coated with thin film of iron catalyst using photolithography, sputtering, and lift off process. Four CEAs were synthesized on these substrates using thermal chemical vapor deposition with minor changes in pretreatment duration. Out of these, two CEAs have 10 {mu}m Multiplication-Sign 10 {mu}m and 40 {mu}m Multiplication-Sign 40 {mu}m solid square dots of CNTs with constant 20 {mu}m inter-dot separation. Other two CEAs have ring square bundles of CNTs and these CEAs are envisioned as 10 {mu}m Multiplication-Sign 10 {mu}m square dots with 4 {mu}m Multiplication-Sign 4 {mu}m scooped out area and 15 {mu}m Multiplication-Sign 15 {mu}m square dots with 5 {mu}m Multiplication-Sign 5 {mu}m lift out area with constant 20 {mu}m inter-dot spacing. Solid square dot structures have exactly constant edge length per unit area with more than four-fold difference in CNT growth area however ring square dot patterns have minor difference in edge length per unit area with approximately two times difference in CNT growth area. Quality and morphology of synthesized CEAs were assessed by scanning electron microscope and Raman characterization which confirm major differences. Field emission of all CEAs was carried out under same vacuum condition and constant inter-electrode separation. Field emission of solid square dot CEAs show approximately identical current density-electric field curves and Fowler-Nordheim plots with little difference in emission current density at same electric field. Similar results were observed for ring square structure CEAs when compared separately. Maximum emission current density observed from these four CEAs reduces from 14.53, 12.23, 11.01, to 8.66 mA/cm{sup 2} at a constant electric field of 5 V/{mu}m, according to edge length of 1361.7, 1221.08, 872.20, to 872.16 mm rather than growth area and purity. Although, the 40 {mu}m Multiplication-Sign 40 {mu}m CEAs possessed highest CNT growth area of 8.7 mm{sup 2} and best purity defined in terms of lowest defect band to graphitic band ratio of 0.614, the current observed from this CEAs was least.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Charge carrier dynamics and recombination in graded band gap CuIn 1-x Ga x Se 2 polycrystalline thin-film photovoltaic solar cell absorbers

We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn 1-x Ga x Se 2 (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75–230 cm 2 V -1 s -1 . Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5×10 15 –10 17 cm -3 . Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells.

14 SOLAR ENERGY↗

Defect formation in Cu(In,Ga)Se{sub 2} thin films due to the presence of potassium during growth by low temperature co-evaporation process

Doping the Cu(In,Ga)Se{sub 2} (CIGS) absorber layer with alkaline metals is necessary to process high efficiency solar cells. When growth of CIGS solar cells is performed on soda-lime glass (SLG), the alkaline elements naturally diffuse from the substrate into the absorber layer. On the other hand, when CIGS is grown on alkaline free substrates, the alkaline metals have to be added from another source. In the past, Na was believed to be the most important dopant of the alkaline elements, even though K was also observed to diffuse into CIGS from the SLG. Recently, the beneficial effect of a post deposition treatment with KF was pointed out and enabled the production of a 20.4% CIGS solar cell grown at low substrate temperature (<500 °C). However, possible negative effects of the presence or addition of the alkaline impurities during the low temperature growth process were observed for Na, but were not investigated for K so far. In this study, we investigate in detail the role of K on the defect formation in CIGS layers deposited at low temperature on alkaline free polyimide with intentional addition of K during selected time intervals of the CIGS layer growth. By means of admittance spectroscopy and deep level transient spectroscopy, we identify a deep minority carrier trap at around 280 meV below the conduction band E{sub C} in CIGS layers grown with K. Its influence on recombination and minority carrier lifetime in the absorber layer is investigated with external quantum efficiency measurements and time-resolved photoluminescence. Furthermore, to support the experimental findings device simulations were performed using the software SCAPS.

36 MATERIALS SCIENCE↗

Quantitative hard x-ray phase contrast imaging of micropipes in SiC

Peculiarities of quantitative hard x-ray phase contrast imaging of micropipes in SiC are discussed. The micropipe is assumed as a hollow cylinder with an elliptical cross section. The major and minor diameters can be restored using the least square fitting procedure by comparing the experimental data, i.e. the profile across the micropipe axis, with those calculated based on phase contrast theory. It is shown that one projection image gives an information which does not allow a complete determination of the elliptical cross section, if an orientation of micropipe is not known. Another problem is a weak accuracy in estimating the diameters, partly because of using pink synchrotron radiation, which is necessary because a monochromatic beam intensity is not sufficient to reveal the weak contrast from a very small object. The general problems of accuracy in estimating the two diameters using the least square procedure are discussed. Two experimental examples are considered to demonstrate small as well as modest accuracies in estimating the diameters.

36 MATERIALS SCIENCE↗

High field magnetotransport and point contact Andreev reflection measurements on CuCr{sub 2}Se{sub 4} and CuCr{sub 2}Se{sub 3}Br—Degenerate magnetic semiconductor single crystals

Single crystals of the metallically degenerate fully magnetic semiconductors CuCr{sub 2}Se{sub 4} and CuCr{sub 2}Se{sub 3}Br have been prepared by the Chemical Vapour Transport method, using either Se or Br as transport agents. The high-quality, millimetre-sized, octahedrally faceted, needle- and platelet-shaped crystals are characterised by means of high field magnetotransport (μ{sub 0}H≤ 14 T) and Point Contact Andreev Reflection. The relatively high spin polarisation observed |P|>0.56, together with the relatively low minority carrier effective mass of 0.25 m{sub e}, and long scattering time 10{sup −13} s, could poise these materials for integration in low- and close-to-room temperature minority injection bipolar heterojunction transistor demonstrations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells

The performance of passivated emitter and rear (PERC) solar cells made of p-type Si wafers is often limited by recombination in the phosphorus-doped emitter. To overcome this limitation, a realistic PERC solar cell is simulated, whereby the conventional phosphorus-doped emitter is replaced by a thin, crystalline gallium phosphide (GaP) layer. The resulting GaP/Si PERC cell is compared to Si PERC cells, which have (i) a standard POCl{sub 3} diffused emitter, (ii) a solid-state diffused emitter, or (iii) a high efficiency ion-implanted emitter. The maximum efficiencies for these realistic PERC cells are between 20.5% and 21.2% for the phosphorus-doped emitters (i)–(iii), and up to 21.6% for the GaP emitter. The major advantage of this GaP hetero-emitter is a significantly reduced recombination loss, resulting in a higher V{sub oc}. This is so because the high valence band offset between GaP and Si acts as a nearly ideal minority carrier blocker. This effect is comparable to amorphous Si. However, the GaP layer can be contacted with metal fingers like crystalline Si, so no conductive oxide is necessary. Compared to the conventional PERC structure, the GaP/Si PERC cell requires a lower Si base doping density, which reduces the impact of the boron-oxygen complexes. Despite the lower base doping, fewer rear local contacts are necessary. This is so because the GaP emitter shows reduced recombination, leading to a higher minority electron density in the base and, in turn, to a higher base conductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

LHCD and ICRF heating experiments in H-mode plasmas on EAST

An ICRF system with power up to 6.0 MW and a LHCD system up to 4MW have been applied for heating and current drive experiments on EAST. Intensive lithium wall coating was intensively used to reduce particle recycling and Hydrogen concentration in Deuterium plasma, which is needed for effective ICRF and LHCD power absorption in high density plasmas. Significant progress has been made with ICRF heating and LHW current drive for realizing the H-mode plasma operation in EAST. In 2010, H-mode was generated and sustained by LHCD alone, where lithium coating and gas puffing launcher mouth were applied to improve the LHCD power coupling and penetration into the core plasmas at high density of H-modes. During the last two experimental campaigns, ICRF Heating experiments were carried out at the fixed frequency of 27MHz, achieving effective ions and electrons heating with the H Minority Heating (H-MH) mode, where electrons are predominantly heated by collisions with high energy minority ions. The H-MH mode gave the best plasma performance, and realized H-mode alone in 2012. Combination of ICRF and LHW power injection generated the H-mode plasmas with various ELMy characteristics. The first successful application of the ICRF Heating in the D (He3) plasma was also achieved. The progress on ICRF heating, LHCD experiments and their application in achieving H-mode operation from last two years will be discussed in this report.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

RF physics of ICWC discharge at high cyclotron harmonics

Recent experiments on Ion Cyclotron Wall Conditioning (ICWC) performed in tokamaks TEXTOR and ASDEX Upgrade with standard ICRF antennas operated at fixed frequencies but variable toroidal magnetic field demonstrated rather contrasting parameters of ICWC discharge in scenarios with on-axis fundamental ion cyclotron resonance (ICR) for protons,ω=ω{sub H+}, and with its high cyclotron harmonics (HCH), ω=10ω{sub cH+}⋅ HCH scenario: very high antenna coupling to low density RF plasmas (P{sub pl}≈0.9P{sub RF-G}) and low energy Maxwellian distribution of CX hydrogen atoms with temperature T{sub H}≈350 eV. Fundamental ICR: lower antenna-plasma coupling efficiency (by factor of about 1.5 times) and generation of high energy non-Maxwellian CX hydrogen atoms (with local energy E{sub ⊥H} ≥1.0 keV). In the present paper, we analyze the obtained experimental results numerically using (i) newly developed 0-D transport code describing the process of plasma production with electron and ion collisional ionization in helium-hydrogen gas mixture and (ii) earlier developed 1-D Dispersion Relation Solver accounting for finite temperature effects and collision absorption mechanisms for all plasma species in addition to conventionally examined Landau/TTPM damping for electrons and cyclotron absorption for ions. The numerical study of plasma production in helium with minor hydrogen content in low and high toroidal magnetic fields is presented. The investigation of the excitation, conversion and absorption of plasma waves as function of B{sub T}-field suggests that only fast waves (FW) may give a crucial impact on antenna coupling and characteristics of the ICWC discharge using standard poloidally polarized ICRF antennas designed to couple RF power mainly to FW. The collisional (non-resonant) absorption by electrons and ions and IC absorption by resonant ions of minor concentration in low T{sub e} plasmas is studied at fundamental ICR and its high harmonics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Probing the electronic structure and Au–C chemical bonding in AuC{sub 2}{sup −} and AuC{sub 2} using high-resolution photoelectron spectroscopy

We report photoelectron spectroscopy (PES) and high-resolution PE imaging of AuC{sub 2}{sup −} at a wide range of photon energies. The ground state of AuC{sub 2}{sup −} is found to be linear (C{sub ∞v}, {sup 1}Σ{sup +}) with a …8π{sup 4}4δ{sup 4}17σ{sup 2}9π{sup 4}18σ{sup 2} valence configuration. Detachments from all the five valence orbitals of the ground state of AuC{sub 2}{sup −} are observed at 193 nm. High-resolution PE images are obtained in the energy range from 830 to 330 nm, revealing complicated vibronic structures from electron detachment of the 18σ, 9π, and 17σ orbitals. Detachment from the 18σ orbital results in the {sup 2}Σ{sup +} ground state of neutral AuC{sub 2}, which, however, is bent due to strong vibronic coupling with the nearby {sup 2}Π state from detachment of a 9π electron. The {sup 2}Σ{sup +}–{sup 2}Π vibronic and spin-orbit coupling results in complicated vibronic structures for the {sup 2}Σ{sup +} and {sup 2}Π{sub 3/2} states with extensive bending excitations. The electron affinity of AuC{sub 2} is measured accurately to be 3.2192(7) eV with a ground state bending frequency of 195(6) cm{sup −1}. The first excited state ({sup 2}A′) of AuC{sub 2}, corresponding to the {sup 2}Π{sub 3/2} state at the linear geometry, is only 0.0021 eV above the ground state ({sup 2}A′) and has a bending frequency of 207(6) cm{sup −1}. The {sup 2}Π{sub 1/2} state, 0.2291 eV above the ground state, is linear with little geometry change relative to the anion ground state. The detachment of the 17σ orbital also results in complicated vibronic structures, suggesting again a bent state due to possible vibronic coupling with the lower {sup 2}Π state. The spectrum at 193 nm shows the presence of a minor species with less than 2% intensity relative to the ground state of AuC{sub 2}{sup −}. High-resolution data of the minor species reveal several vibrational progressions in the Au–C stretching mode, which are assigned to be from the metastable {sup 3}Π{sub 2,1,0} spin-orbit excited states of AuC{sub 2}{sup −} to the {sup 2}Π{sub 3/2,1/2} spin-orbit states of neutral AuC{sub 2}. The spin-orbit splittings of the {sup 3}Π and {sup 2}Π states are accurately measured at the linear geometry. The current study provides a wealth of electronic structure information about AuC{sub 2}{sup −} and AuC{sub 2}, which are ideal systems to investigate the strong Σ–Π and spin-orbit vibronic couplings.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

Using a pulsed green laser with a wavelength of 532 nm, a duration pulse of ∼1 ns, and a mean power varying between 1 and 100 mW, induced photocurrents have been measured in 4H-SiC bipolar diodes. Considering the photon energy (2.33 eV) and the bandgap of 4H-SiC (3.2 eV), the generation of electron-hole pair by the conventional single photon absorption process should be negligible. The intensity of the measured photocurrents depends quadratically on the power beam intensity. This clearly shows that they are generated using two-photon absorption process. As in conventional OBIC (Optical Beam Induced Current), the measurements give an image of the electric field distribution in the structure under test, and the minority carrier lifetime can be extracted from the decrease of the photocurrent at the edge of the structure. The extracted minority carrier lifetime of 210 ns is consistent with results obtained in case of single photon absorption.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

In the present paper, we propose a method for evaluating the bulk diffusion length of minority charge carriers in the photosensing layer of photovoltaic focal plane array (FPA) photodetectors. The method is based on scanning a strip-shaped illumination spot with one of the detector diodes at a low level of photocurrents j{sub ph} being registered; such scanning provides data for subsequent analysis of measured spot-scan profiles within a simple diffusion model. The asymptotic behavior of the effective (at j{sub ph} ≠ 0) charge-carrier diffusion length l{sub d} {sub eff} as a function of j{sub ph} for j{sub ph} → 0 inferred from our experimental data proved to be consistent with the behavior of l{sub d} {sub eff} vs j{sub ph} as predicted by the model, while the obtained values of the bulk diffusion length of minority carriers (electrons) in the p-HgCdTe film of investigated HgCdTe n-on-p FPA photodetectors were found to be in a good agreement with the previously reported carrier diffusion-length values for HgCdTe.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Dynamics of submicron aerosol droplets in a robust optical trap formed by multiple Bessel beams

In this paper, we model the three-dimensional escape dynamics of single submicron-sized aerosol droplets in optical multiple Bessel beam traps. Trapping in counter-propagating Bessel beams (CPBBs) is compared with a newly proposed quadruple Bessel beam (QBB) trap, which consists of two perpendicularly arranged CPBB traps. Calculations are performed for perfectly and imperfectly aligned traps. Mie-theory and finite-difference time-domain methods are used to calculate the optical forces. The droplet escape kinetics are obtained from the solution of the Langevin equation using a Verlet algorithm. Provided the traps are perfectly aligned, the calculations indicate very long lifetimes for droplets trapped either in the CPBB or in the QBB trap. However, minor misalignments that are hard to control experimentally already severely diminish the stability of the CPBB trap. By contrast, such minor misalignments hardly affect the extended droplet lifetimes in a QBB trap. The QBB trap is found to be a stable, robust optical trap, which should enable the experimental investigation of submicron droplets with radii down to 100 nm. Optical binding between two droplets and its potential role in preventing coagulation when loading a CPBB trap is briefly addressed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Oxygen transport in the internal xenon plasma of a dispenser hollow cathode

Reactive gases such as oxygen and water vapor modify the surface morphology of BaO dispenser cathodes and degrade the electron emission properties. For vacuum cathodes operating at fixed temperature, the emission current drops rapidly when oxygen adsorbs on top of the low work function surface. Previous experiments have shown that plasma cathodes are more resistant to oxygen poisoning and can operate with O{sub 2} partial pressures one to two orders of magnitude higher than vacuum cathodes before the onset of poisoning occurs. Plasma cathodes used for electric thrusters are typically operated with xenon; however, gas phase barium, oxygen, and tungsten species may be found in small concentrations. The densities of these minor species are small compared with the plasma density, and thus, their presence in the discharge does not significantly alter the xenon plasma parameters. It is important, however, to consider the transport of these minor species as they may deposit on the emitter surface and affect the electron emission properties. In this work, we present the results of a material transport model used to predict oxygen fluxes to the cathode surface by solving the species conservation equations in a cathode with a 2.25 mm diameter orifice operated at a discharge current of 15 A, a Xe flow rate of 3.7 sccm, and 100 ppm of O{sub 2}. The dominant ionization process for O{sub 2} is resonant charge exchange with xenon ions. Ba is effectively recycled in the plasma; however, BaO and O{sub 2} are not. The model shows that the oxygen flux to the surface is not diffusion-limited; therefore, the high resistance to oxygen poisoning observed in plasma cathodes likely results from surface processes not considered here.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Large magnetic entropy change and adiabatic temperature rise of a Gd{sub 55}Al{sub 20}Co{sub 20}Ni{sub 5} bulk metallic glass

Gd{sub 55}Al{sub 20}Co{sub 20}Ni{sub 5} bulk metallic glass (BMG) was synthesized by minor Ni substitution for Co in the Gd{sub 55}Al{sub 20}Co{sub 25} BMG in which excellent glass forming ability (GFA) and magneto-caloric effect were reported previously. The Gd{sub 55}Al{sub 20}Ni{sub 20}Co{sub 5} amorphous rod has a similar GFA to the Gd{sub 55}Al{sub 20}Co{sub 25} BMG but exhibits better magnetic properties. The peak value of magnetic entropy change (−ΔS{sub m}{sup peak}) of the Gd{sub 55}Al{sub 20}Co{sub 20}Ni{sub 5} BMG is 9.8 Jkg{sup −1} K{sup −1}. The field dependence of −ΔS{sub m}{sup peak} follows a −ΔS{sub m}{sup peak}∝H{sup 0.85} relationship. The adiabatic temperature rise of the rod is 4.74 K under 5 T and is larger than of other BMGs previously reported. The improved magnetic properties were supposed to be induced by the enhanced interaction between 4f electron in the rare-earth and 3d electron in the transition metal elements by means of a minor Ni substitution for Co.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗