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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,063 records · Page 59
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Enhanced Local Magnetization by Interface Engineering in Perovskite-Type Correlated Oxide Heterostructures

Elimination of a magnetic dead-layer at the LSMO/STO interface is achieved by interface engineering through incorporation of a single La 0.33 Sr 0.67 O layer. Further, controlled growth of interfacial atomic stacking in combination with local magnetic probing by polarized neutron reflectometry enables controlled interface engineering and results in optimal interfacial magnetization in perovskite-type correlated oxide heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Splitting of magnetic dipole modes in anisotropic TiO 2 micro-spheres: Splitting of magnetic dipole modes in anisotropic TiO 2 micro-spheres

Monocrystalline titanium dioxide (TiO 2 ) micro-spheres support two orthogonal magnetic dipole modes at terahertz (THz) frequencies due to strong dielectric anisotropy. For the first time, we experimentally detected the splitting of the first Mie mode in spheres of radii inline imagem through near-field time-domain THz spectroscopy. By fitting the Fano lineshape model to the experimentally obtained spectra of the electric field detected by the sub-wavelength aperture probe, we found that the magnetic dipole resonances in TiO 2 spheres have narrow linewidths of only tens of gigahertz. Lastly, anisotropic TiO 2 micro-resonators can be used to enhance the interplay of magnetic and electric dipole resonances in the emerging THz all-dielectric metamaterial technology.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2019

Effect of Annealing on Perpendicular Magnetic Anisotropy and Low Saturation Magnetization of MgO/Co{sub 2}FeAl/Mo Trilayer Films

In this study, we report our approach to manipulate the strength of perpendicular magnetic anisotropy (PMA) at oxide/ferromagnetic metal of Heusler alloy (HA) interface by tuning the parameter of annealing temperature. Robust PMA energy density (K{sub eff}) of ∼ 0.43 × 10{sup 6} erg/cm{sup 3} and small saturation magnetization (M{sub s}) as low as ∼ 248 emu/cm{sup 3} have been achieved for MgO/Co{sub 2}FeAl (CFA)/Mo stacks at 400 {sup ∘}C. We identify that PMA energy is thermally stable up to the maximum temperature of 400 {sup ∘}C. Effect of annealing temperature on surface morphology, grain distribution, and surface roughness of the stacks are investigated by atomic force microscopy (AFM). Further, X-ray photoelectron spectroscopy (XPS) study demonstrates that the interfacial oxidation decides the strong PMA property at MgO/Co{sub 2}FeAl interface during the annealing process. This MgO/CFA/Mo trilayer system can be a suitable candidate for the development of low-power consumption, huge-density data storage, high-thermal stability against the annealing temperature, and nonvolatile magnetic memories.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Microstructure and Magnetic Properties of Exchange-Coupled Co{sub 72}Pt{sub 28}/Pt/Co{sub 81}Ir{sub 19} Composite Media for Perpendicular Magnetic Recording

In this work, we report the investigation of microstructure and magnetic properties of the Co{sub 72}Pt{sub 28}/Pt/Co{sub 81}Ir{sub 19} exchange-coupled composite (ECC) media using soft-layer (SL) of Co{sub 81}Ir{sub 19} with negative magnetocrystalline anisotropy (MA). Our TEM images show that the hard-layer (HL) exhibits a columnar type microstructure with well-isolated grains and the exchange-coupled SL with hcp-structure show the same texture. Strong coupling of the two layers have been evidenced by the magnetic characterization for all the studied films with Pt inter-layer thickness ranging from 0 to 2 nm. Importantly, these ECC media films have much lower coercivities and much higher thermal stabilities in the favor of high-density magnetic recording.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Multiphase Resistivity Model for Magnetic Nanocomposites Developed for High Frequency, High Power Transformation

New power conversion systems that offer promise to transform electricity grids into unified interactive supply networks require high-resistivity soft-magnetic materials to allow for switching of magnetic materials at frequencies approaching 100 kHz for power transformation in the megawatt range. Amorphous and nanocomposite soft-magnetic materials, which represent the state of the art in terms of high power densities and low losses at high frequencies, have resistivities that depend on the structures and spatial distributions of multiple phases in thin ribbons. We present a multiphase resistivity model applicable to nanocomposite materials by considering an equivalent circuit approach considering paths through an amorphous, crystalline, and growth inhibitor shell phase. We detail: (a) identification of amorphous, crystalline, and shell phases; (b) consideration of the role of the morphology of each phase in an equivalent circuit model for the resistance; (c) a two-band model for the Fe/Co composition dependence of the resistivity in crystalline and amorphous phases; (d) a virtual bound state model for resistivity to explain increased resistivity due to early transition-metal growth inhibitors in the shell surrounding the nanocrystalline phase; and (e) disorder effects on amorphous phase resistivity. Experimental design and results for systems of interest in high-frequency power transformation are discussed in the context of our model including: (a) techniques for measurements of cross-section and density, (b) four-point probe and surface resistivity measurements, and (c) measurements in Fe- and Co-rich systems comparing amorphous and nanocomposite materials.

DeGeorge, V↗
DOE OSTI2023

An implicit, conservative and asymptotic-preserving electrostatic particle-in-cell algorithm for arbitrarily magnetized plasmas in uniform magnetic fields

Here, we introduce a new electrostatic particle-in-cell algorithm capable of using large timesteps compared to particle gyro-period under a uniform external magnetic field. The algorithm extends earlier electrostatic fully implicit PIC implementations with a new asymptotic-preserving particle-push scheme that allows timesteps much larger than particle gyroperiods. In the large-timestep limit, the integrator preserves all particle drifts, while recovering the full orbit for small timesteps. The scheme allows for a seamless, efficient treatment of particles with coexisting magnetized and unmagnetized species, and conserves energy and charge exactly without spoiling implicit solver performance. We demonstrate by numerical experiment with several problems of variable species magnetization (diocotron instability, modified two-stream instability, and drift instability) that orders of magnitude wall-clock-time speedups vs. the standard fully implicit electrostatic PIC algorithm are possible without sacrificing solution accuracy.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Microstructures, magnetic and electric properties of diluted magnetic semiconductors InTe{sub 1−x} Fe{sub x} (Co{sub x})

Highlights: ► The prepared InTe{sub 0.9}Fe{sub 0.1} was found to be ferromagnetic at room temperature and can be characterized as diluted magnetic semiconductors. ► The presence of staking faults, various types of defects, strained lattice, grain boundaries and the impurity of minor non-magnetic phase were suggested to participate in high temperature ferromagnetism. - Abstract: InTe compound doped by 10% of Fe or Co respectively was synthesized. X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope (SEM), energy dispersive X-ray (EDX), vibrating sample magnetometer (VSM) and Kiethley electrometer were used for characterizing the prepared samples. XRD show the presence of InTe{sub 0.9}Fe{sub 0.1} or InTe{sub 0.9}Co{sub 0.1} together with minor In{sub 4}Te{sub 3} phase. InTe{sub 0.9}Fe{sub 0.1} is ferromagnetic with high Curie and high blocking temperature, while InTe{sub 0.9}Co{sub 0.1} is antiferromagnetic with two high Neels temperatures. σRT of InTe{sub 0.9}Fe{sub 0.1} and InTe{sub 0.9}Co{sub 0.1} are greater than those of InTe. The higher conductivity is due to the higher carrier's density obtained from the interaction of the sp-d orbitals, of the electric and magnetic system. The presence of In{sub 4}Te{sub 3} minor phase and different kinds of defects are taking major roles in the formation of high Tc ferromagnetism and antiferromagnetism.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Chemical Control of Magnetism in the Kagome Metal CoSn 1 – x In x : Magnetic Order from Nonmagnetic Substitutions

As a two-dimensional structural motif, the kagome net produces many interesting magnetic and electronic properties. In particular, this lattice produces flat electronic bands with a large density of states. When the chemical potential is positioned within these flat bands, electronic instabilities can result. For the kagome metal CoSn, this alignment is not realized, the flat bands are completely filled, and the compound is a Pauli paramagnet. For this study, we have grown crystals and powders of CoSn 1 – x In x and shown that replacing Sn with In moves the chemical potential into the flat band region, as expected from simple electron counting. This is supported by band structure calculations, heat capacity measurements, and angle-resolved photoemission spectroscopy. The increased density of states results in the emergence of antiferromagnetic order evidenced by magnetic susceptibility, Mössbauer spectroscopy, and neutron diffraction data. The Néel temperature reaches a maximum of 32 K. The emergence of magnetic order when introducing a nonmagnetic element into a nonmagnetic kagome metal is striking. This work provides clear evidence that flat bands arising from electronically frustrated lattices in bulk crystals provide a new and powerful way to realize correlated ground states controlled by crystal chemistry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Spin Solar Cell Phenomenon on a Single-Molecule Magnet (SMM) Impacted CoFeB-Based Magnetic Tunnel Junctions

The single-molecule magnet (SMM) is demonstrated here to transform conventional magnetic tunnel junctions (MTJs), a memory device used in present-day computers, into solar cells. For the first time, we demonstrated an electronic spin-dependent solar cell effect on an SMM-transformed MTJ under illumination from unpolarized white light. We patterned cross-junction-shaped devices to form a CoFeB/MgO/CoFeB-based MTJ. The MgO barrier thickness at the intersection between the two exposed junction edges was less than the SMM extent, which enabled the SMM molecules to serve as channels to conduct spin-dependent transport. The SMM channels yielded a region of long-range magnetic ordering around these engineered molecular junctions. Our SMM possessed a hexanuclear [Mn 6 (μ 3 -O) 2 (H 2 N-sao) 6 (6-atha) 2 (EtOH) 6 ] [H 2 N-saoH = salicylamidoxime, 6-atha = 6-acetylthiohexanoate] complex and thioesters end groups to form bonds with metal films. SMM-doped MTJs were shown to exhibit a solar cell effect and yielded ≈80 mV open-circuit voltage and ≈10 mA/cm 2 saturation current density under illumination from one sun equivalent radiation dose. A room-temperature Kelvin Probe AFM (KPAFM) study provided direct evidence that the SMM transformed the electronic properties of the MTJ’s electrodes over a lateral area in excess of several thousand times larger in extent than the area spanned by the molecular junctions themselves. As a result, the decisive factor in observing this spin-photovoltaic effect is the formation of SMM spin channels between the two different ferromagnetic electrodes, which in turn is able to catalyze the long-range transformation in each electrode around the junction area.

14 SOLAR ENERGY↗
DOE OSTI2023

Direct observation of electric field-induced magnetism in a molecular magnet

Abstract We report the direct observation of an electrically-induced magnetic susceptibility in the molecular nano- magnet [Fe 3 O(O 2 CPh) 6 (py) 3 ]ClO 4 · py, an Fe 3 trimer. This magnetoelectric effect results from the breaking of spatial inversion symmetry due to the spin configurations of the antiferromagnetic trimer. Both static and very low frequency electric fields were used. Fractional changes of the magnetic susceptibility of 11 ppb $$\pm 2$$ ± 2 per kVm -1 for the temperature range 8 . 5 < T < 13 . 5 K were observed for applied electric fields up to 62 kV m − 1 . The changes in susceptibility were measured using a tunnel diode oscillator operating at liquid helium temperatures while the sample is held at a higher regulated temperature.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2013

Low-temperature magnetic characterization of optimum and etch-damaged in-plane magnetic tunnel junctions

We describe low-temperature characterization of magnetic tunnel junctions (MTJs) patterned by reactive ion etching for spin-transfer-torque magnetic random access memory. Magnetotransport measurements of typical MTJs show increasing tunneling magnetoresistance (TMR) and larger coercive fields as temperature is decreased down to 10 K. However, MTJs selected from the high-resistance population of an MTJ array exhibit stable intermediate magnetic states when measured at low temperature and show TMR roll-off below 100 K. These non-ideal low-temperature behaviors arise from edge damage during the etch process and can have negative impacts on thermal stability of the MTJs.

36 MATERIALS SCIENCE↗