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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,063 records · Page 59
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Proton dynamics in water confined at the interface of the graphene–MXene heterostructure

Heterostructures of 2D materials offer a fertile ground to study ion transport and charge storage. Here, we use ab initio molecular dynamics to examine the proton-transfer/diffusion and redox behavior in a water layer confined in the graphene-Ti 3 C 2 O 2 heterostructure. We find that in comparison with the similar interface of water confined between Ti 3 C 2 O 2 layers, the proton redox rate in the dissimilar interface of graphene-Ti 3 C 2 O 2 is much higher, owing to the very different interfacial structure as well as the interfacial electric field induced by an electron transfer in the latter. Water molecules in the dissimilar interface of the graphene-Ti 3 C 2 O 2 heterostructure form a denser hydrogen-bond network with a preferred orientation of water molecules, leading to an increase in proton mobility with proton concentration in the graphene-Ti 3 C 2 O 2 interface. As the proton concentration further increases, proton mobility decreases due to increasingly more frequent surface redox events that slow down proton mobility due to binding with surface O atoms. Our work provides important insights into how the dissimilar interface and their associated interfacial structure and properties impact proton transfer and redox in the confined space.

2D materials↗
DOE OSTI2022

Interfacial water asymmetry at ideal electrochemical interfaces

Controlling electrochemical reactivity requires a detailed understanding of the charging behavior and thermodynamics of the electrochemical interface. Experiments can independently probe the overall charge response of the electrochemical double layer by capacitance measurements and the thermodynamics of the inner layer with potential of maximum entropy measurements. Relating these properties by computational modeling of the electrochemical interface has so far been challenging due to the low accuracy of classical molecular dynamics (MD) for capacitance and the limited time and length scales of ab initio MD. Here, we combine large ensembles of long-time-scale classical MD simulations with charge response from electronic density functional theory to predict the potential-dependent capacitance of a family of ideal aqueous electrochemical interfaces with different peak capacitances. We show that while the potential of maximum capacitance varies, this entire family exhibits an electrode charge of maximum capacitance (CMC) between -2.9 and -2.2 μC/cm 2 , regardless of the details in the electronic response. Simulated heating of the same interfaces reveals that the entropy peaks at a charge of maximum entropy (CME) of -5.1 ± 0.6 μC/cm 2 , in agreement with experimental findings for metallic electrodes. The CME and CMC both indicate asymmetric response of interfacial water that is stronger for negatively charged electrodes, while the difference between CME and CMC illustrates the richness in behavior of even the ideal electrochemical interface.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Measurement of mix at the fuel–ablator interface in indirectly driven capsule implosions on the National Ignition Facility

The interface between the capsule ablator and fuel ice layer is susceptible to hydrodynamic instabilities. The subsequent mixing of hot ablator material into the ice reduces fuel compression at stagnation and is a candidate for reduced capsule performance. The ability to diagnose ice–ablator mix is critical to understanding and improving stability at this interface. Combining the crystal backlighter imager with the single line of sight camera on the National Ignition Facility (NIF) allows direct measurement of ice–ablator mix by providing multiple quasi-monochromatic radiographs of layered capsule implosions per experiment with high spatial (∼12 μm) and temporal (∼35 ps) resolution. The narrow bandwidth of this diagnostic platform allows radiography of the inner edge of the capsule limb close to stagnation without capsule self-emission contaminating the data and removes opacity uncertainties typically associated with the spectral content of the radiograph. Analysis of radiographic data via a parameterized forward-fitting Abel inversion technique provides measurements of the distribution of mix mass inwards from the ice–ablator interface. The sensitivity of this mix measurement technique was demonstrated by applying it to layered experiments in which the stability of the ice–ablator interface was expected to vary significantly. Additional experiments suggest that high-density carbon capsules that employ a buried-layer dopant profile suffer from mixing at the innermost doped–undoped interface. Data from these experiments suggest that opacity models used in hydrodynamic simulations of NIF experiments can potentially over-predict the opacity of doped capsules. LLNL-JRNL-850535-DRAFT.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Interface atomic structures in a cadmium arsenide/III–V semiconductor heterostructure

The interface atomic structure between an epitaxial thin film of the prototype topological semimetal cadmium arsenide (Cd 3 As 2 ) and a III–V semiconductor layer is investigated using high-angle annular dark-field imaging in an aberration-corrected scanning transmission electron microscope. We find that the interface unit cell adopts a defined stoichiometry that is CdSb-like, which is achieved through the insertion of periodically arranged Cd vacancies in the terminating Cd-plane of Cd 3 As 2 . This interface stoichiometry is consistent with the Sb-termination of the III–V layer and the fact that CdSb is the thermodynamically stable phase in the Cd–Sb binary system. We find at least two distinct alignments of the film with respect to the buffer layer, which are characterized by a $\frac{1}{4}$ <100> Cd 3 As 2 shift parallel to the interface. We show that steps of half unit cell height in the III–V layer can produce these distinct interface structures.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2023

A novel approach to interface high-Q Fabry–Pérot resonators with photonic circuits

The unique benefits of Fabry–Pérot resonators as frequency-stable reference cavities and as an efficient interface between atoms and photons make them an indispensable resource for emerging photonic technologies. To bring these performance benefits to next-generation communications, computation, and time-keeping systems, it will be necessary to develop strategies to integrate compact Fabry–Pérot resonators with photonic integrated circuits. In this paper, we demonstrate a novel reflection cancellation circuit that utilizes a numerically optimized multi-port polarization-splitting grating coupler to efficiently interface high-finesse Fabry–Pérot resonators with a silicon photonic circuit. This circuit interface produces a spatial separation of the incident and reflected waves, as required for on-chip Pound–Drever–Hall frequency locking, while also suppressing unwanted back reflections from the Fabry–Pérot resonator. Using inverse design principles, we design and fabricate a polarization-splitting grating coupler that achieves 55% coupling efficiency. This design realizes an insertion loss of 5.8 dB for the circuit interface and more than 9 dB of back reflection suppression, and we demonstrate the versatility of this system by using it to interface several reflective off-chip devices.

Optics↗
DOE OSTI2024

Shock-driven three-fluid mixing with various chevron interface configurations

When a shock wave crosses a density interface, the Richtmyer–Meshkov instability causes perturbations to grow. Richtmyer–Meshkov instabilities arise from the deposition of vorticity from the misaligned density and pressure gradients at the shock front. In many engineering applications, microscopic surface roughness will grow into multi-mode perturbations, inducing mixing between the fluid on either side of an initial interface. Applications often have multiple interfaces, some of which are close enough to interact in the later stages of instability growth. In this study, we numerically investigate the mixing of a three-layer system with periodic zigzag (or chevron) interfaces, calculating the dependence of the width and mass of mixed material on properties such as the shock timing, chevron amplitude, multi-mode perturbation spectrum, density ratio, and shock mach number. The multi-mode case is also compared with a single-mode perturbation. The Flash hydrodynamic code is used to solve the Euler equations in three dimensions with adaptive grid refinement. Key results include a significant increase in mixed mass when changing from a single-mode to a multi-mode perturbation on one of the interfaces. The mixed width is mainly sensitive to the density ratio and chevron amplitude, whereas the mixed mass also depends on the multi-mode spectrum. In conclusion, steeper initial perturbation spectra have lower mixed mass at early times but a greater mixed mass after the reflected shock transits back across the layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Design and performance of AI agents interfacing with an atomic layer deposition tool

In this work, we introduce the design of an atomic layer deposition (ALD) reactor augmented with an AI interface for autonomous materials synthesis. Our modular design encapsulates the particularities of the hardware behind a Python interface that communicates with the ALD control software via transmission control protocol. This interface is compatible with model context protocol interfaces used in agentic frameworks. We have integrated our tool with a simple AI agent that leverages a large language model to transform user-supplied queries into ALD processes that are then run in our reactor. Our approach uses a JavaScript object notation schema to encode ALD processes. Our experimental results show that the AI interface does not impose a significant overhead to our control software, at least within our fastest 10 ms scale. We also carried out a detailed evaluation of the agent performance using leading models in two classes of tasks: basic instruction and process discovery tasks, where the agent is presented with a target material and needs to identify the correct ALD process compatible with the reactor configuration. Despite the simplicity of our agent design, we observed that most of the advanced models excelled at the instruction tasks. However, only recent models, such as o1, o3, GPT-5, and Claude Opus 4, performed well in process discovery tasks. We also observed significant variability in the response for the hardest challenges. While the results obtained are promising, we identify areas where AI research could improve the performance of agents for ALD.

47 OTHER INSTRUMENTATION↗
DOE OSTI2017

Dynamics and unsteady morphologies at ice interfaces driven by D 2 O–H 2 O exchange

The growth dynamics of D 2 O ice in liquid H 2 O in a microfluidic device were investigated between the melting points of D 2 O ice (3.8 °C) and H 2 O ice (0 °C). As the temperature was decreased at rates between 0.002 °C/s and 0.1 °C/s, the ice front advanced but retreated immediately upon cessation of cooling, regardless of the temperature. This is a consequence of the competition between diffusion of H 2 O into the D 2 O ice, which favors melting of the interface, and the driving force for growth supplied by cooling. Raman microscopy tracked H/D exchange across the solid H 2 O–solid D 2 O interface, with diffusion coefficients consistent with transport of intact H 2 O molecules at the D 2 O ice interface. At fixed temperatures below 3 °C, the D 2 O ice front melted continuously, but at temperatures near 0 °C a scalloped interface morphology appeared with convex and concave sections that cycled between growth and retreat. Finally, this behavior, not observed for D 2 O ice in contact with D 2 O liquid or H 2 O ice in contact with H 2 O liquid, reflects a complex set of cooperative phenomena, including H/D exchange across the solid–liquid interface, latent heat exchange, local thermal gradients, and the Gibbs–Thomson effect on the melting points of the convex and concave features.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2022

The effect of metal–insulator interface interactions on electrical transport in granular metals

Here, we present an in-depth study of metal–insulator interfaces within granular metal (GM) films and correlate their interfacial interactions with structural and electrical transport properties. Nominally 100 nm thick GM films of Co and Mo dispersed within yttria-stabilized zirconia (YSZ), with volumetric metal fractions (φ) from 0.2–0.8, were grown by radio frequency co-sputtering from individual metal and YSZ targets. Scanning transmission electron microscopy and DC transport measurements find that the resulting metal islands are well-defined with 1.7–2.6 nm average diameters and percolation thresholds between φ = 0.4–0.5. The room temperature conductivities for the φ = 0.2 samples are several orders of magnitude larger than previously-reported for GMs. X-ray photoemission spectroscopy indicates both oxygen vacancy formation within the YSZ and band-bending at metal–insulator interfaces. The higher-than-predicted conductivity is largely attributed to these interface interactions. In agreement with recent theory, interactions that reduce the change in conductivity across the metal–insulator interface are seen to prevent sharp conductivity drops when the metal concentration decreases below the percolation threshold. These interface interactions help interpret the broad range of conductivities reported throughout the literature and can be used to tune the conductivities of future GMs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Quantifying the impact of the Si/O interface in CCSN explosions using the Force Explosion Condition

ABSTRACT The explosion mechanism of a core-collapse supernova (SN) is a complex interplay between neutrino heating and cooling (including the effects of neutrino-driven convection), the gravitational potential, and the ram pressure of the infalling material. To analyse the post-bounce phase of an SN, one can use the generalized force explosion condition (FEC+), which succinctly formalizes the interplay among these four phenomena in an analytical condition, consistent with realistic simulations. In this paper, we use the FEC+ to study the post-bounce phase of 341 spherically symmetric simulations, where convection is included through a time-dependent mixing-length approach. We find that the accretion of the Si/O interface through the expanding shock can significantly change the outcome of the SN by driving the FEC+ above the explosion threshold. We systematically explore this by (i) artificially smoothing the pre-SN density profile, and (ii) artificially varying the mixing length. In both cases, we find that large-enough density contrasts at the Si/O interface lead to successful shock revival only if the FEC+ is already close to the explosion threshold. Furthermore, we find that the accretion of the Si/O interface has a substantial effect on the critical condition for SN explosions, contributing between 5 and 15 per cent, depending on how pronounced the density contrast at the interface is. Earlier studies showed that convection affects the critical condition by 25–30 per cent, which demonstrates that the accretion of the Si/O interface through the shock can play a nearly comparable role in influencing shock dynamics.

Boccioli, Luca (ORCID:000000024819310X)↗
DOE OSTI2020

Image-enhanced bipolaron formation at organic semiconductor/electrode interfaces

We explore the image charge interaction for organic semiconductor bipolarons near a conducting interface and find that the cross term between one of the constituent charges and the image of its neighbor stabilizes the bipolaron by up to ~0.3 eV, dramatically increasing the concentration of this species near the interface. Using density functional theory calculations for the common hole transport molecule N,N'-bis(3-methylphenyl)- N,N'-diphenylbenzidine, we validate a simple point charge description of this effect and incorporate it within an interface energy level alignment model to predict the density of polarons and bipolarons near the interface. We find that the image effect greatly enhances bipolaron formation in the first few monolayers, leading to the expectation that bipolarons account for more than 1% of the total interface charge in many cases of practical interest. Furthermore, this result reinforces the notion that bipolarons are robust near the contacts of many organic semiconductor devices and thus helps to rationalize their involvement in the phenomenon of unipolar organic magnetoresistance.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Manipulating topological properties in Bi 2 Se 3 / BiSe /transition metal dichalcogenide heterostructures with interface charge transfer

Heterostructures of topological insulator Bi 2 Se 3 on transition metal dichalcogenides (TMDCs) offer a new materials platform for studying novel quantum states by exploiting the interplay among topological orders, charge orders and magnetic orders. Here, the diverse interface attributes, such as material combination, charge re-arrangement, defect and strain, can be utilized to manipulate the quantum properties of this class of materials. Recent experiments of Bi 2 Se 3 /NbSe 2 heterostructures show signatures of strong Rashba band splitting due to the presence of a BiSe buffer layer, but the atomic level mechanism is not fully understood. We conduct first-principles studies of the Bi 2 Se3/BiSe/TMDC heterostructures with five different TMDC substrates (1T phase VSe 2 , MoSe 2 , TiSe 2 , and 2H phase NbSe 2 , MoSe 2 ). We find significant charge transfer at both BiSe/TMDC and Bi 2 Se 3 /BiSe interfaces driven by the work function difference, which stabilizes the BiSe layer as an electron donor and creates interface dipole. The electric field of the interface dipole breaks the inversion symmetry in the Bi 2 Se 3 layer, leading to the giant Rashba band splitting in two quintuple layers and the recovery of the Dirac point in three quintuple layers, with the latter otherwise only occurring in thicker samples with at least six Bi 2 Se 3 quintuple layers. Besides, we find that strain can significantly affect the charge transfer at the interfaces. Our study presents a promising avenue for tuning topological properties in heterostructures of two-dimensional materials, with potential applications in quantum devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Point defect stability in a semicoherent metallic interface

Here, we introduce a comprehensive density functional theory (DFT) -based study of different aspects of one vacancy and He impurity atom behavior at semicoherent interfaces between the low-solubility transition metals Cu and Nb. Such interfaces have not been previously modeled using DFT. A thorough analysis of the stability and mobility of the two types of defects at the interfaces and neighboring internal layers has been performed and the results have been compared to the equivalent cases in the pure metallic matrices. The different behavior of fcc and bcc metals on both sides of the interface has been specifically assessed. The modeling effort undertaken is the initial attempt to study the stability and defect energetics of noncoherent Cu/Nb interfaces from first principles, in order to assess their potential use in radiation-resistant materials.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Depth-resolved charge reconstruction at the LaNi O 3 / CaMn O 3 interface

Here, rational design of low-dimensional electronic phenomena at oxide interfaces is currently considered to be one of the most promising schemes for realizing new energy-efficient logic and memory devices. An atomically abrupt interface between paramagnetic LaNiO 3 and antiferromagnetic CaMnO 3 exhibits interfacial ferromagnetism, which can be tuned via a thickness-dependent metal-insulator transition in LaNiO 3 . Once fully understood, such emergent functionality could turn this archetypal Mott-interface system into a key building block for the above-mentioned future devices. Here, we use depth-resolved standing-wave photoemission spectroscopy in conjunction with scanning transmission electron microscopy and x-ray absorption spectroscopy, to demonstrate a depth-dependent charge reconstruction at the LaNiO 3 /CaMnO 3 interface. Our measurements reveal an increased concentration of Mn 3+ and Ni 2+ cations at the interface, which create an electronic environment favorable for the emergence of interfacial ferromagnetism mediated via the Mn 4+ -Mn 3+ ferromagnetic double exchange and Ni 2+ -O-Mn 4+ superexchange mechanisms. Our findings suggest a strategy for designing functional Mott oxide heterostructures by tuning the interfacial cation characteristics via controlled manipulation of thickness, strain, and ionic defect states.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Role of structural defects in mediating disordering processes at irradiated epitaxial Fe 3 O 4 / Cr 2 O 3 interfaces

Disordering processes in oxide materials are complicated by the presence of interfaces, which can serve as either point defect sinks or accumulation sites; the response depends on factors such as interfacial structure, chemistry, and termination. Here, we have characterized the disordering of epitaxial Fe 3 O 4 (111) / Cr 2 O 3 (0001) thin film heterostructures after 400 keV Ar 2+ radiation at room temperature. The density of misfit dislocations in both the Fe 3 O 4 overlayer and Cr 2 O 3 buffer layer is varied by changing the thickness of Cr 2 O 3 to be pseudomorphically strained to the Al 2 O 3 (0001) substrate (5 nm thick) or partially relaxed (20 nm thick), as confirmed by Bragg filtering analysis of scanning transmission electron microscopy images. In both cases, irradiation leads to damage accumulation on the Fe 3 O 4 side of the heterointerface, as shown by Rutherford backscattering spectrometry measurements in the channeling geometry. However, the interface with more misfit dislocations exhibits disordering at a faster rate than the less-defective interface. Likewise, layer-resolved electron energy loss spectroscopy reveals interfacial reduction of Fe after irradiation at the more defective interface. Intermixing of Cr across the interface is observed by atom probe tomography, which is likely facilitated by the generation of Cr interstitials in Cr 2 O 3 under irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Spectral Similarity Masks Structural Diversity at Hydrophobic Water Interfaces

The air-water and graphene-water interfaces represent quintessential examples of the liquid-gas and liquid-solid boundaries, respectively. While the sum-frequency generation (SFG) spectra of these interfaces show similarities, a consensus on their signals and interpretations has yet to be reached. Leveraging deep learning, we computed first-principles SFG spectra for both systems, addressing experimental discrepancies. Here, our findings reveal that similarities in SFG signals do not translate into comparable interfacial microscopic properties. Instead, graphene-water and air-water interfaces exhibit fundamental differences in SFG-active thicknesses, hydrogen-bonding networks, and surface dynamics. These distinctions underscore roughness suppression and electronic interactions present at the solid-liquid interface but absent at the gas-liquid interface.

Wang, Yong [Princeton Univ., NJ (United States)] (↗
DOE OSTI2014

Roughness of the SiC/SiO{sub 2} vicinal interface and atomic structure of the transition layers

The SiC/SiO{sub 2} interface is generally considered to be the cause for the reduced electron mobility of SiC power devices. Previous studies have shown a correlation between the mobility and the transition layer width at the SiC/SiO{sub 2} interface. The authors investigated this interface with atomic resolution Z-contrast imaging and electron energy-loss spectroscopy, and discovered that this transition region was due to the roughness of the vicinal interface. The roughness of a vicinal interface consisted of atomic steps and facets deviating from the ideal off-axis cut plane. The authors conclude that this roughness is limiting the mobility in the channels of SiC MOSFETs.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Probing liquid/liquid interfaces at and away from equilibrium using vibrational sum frequency generation

The self-assembly and transport of species at oil/aqueous interfaces represent key mechanistic steps in processes spanning from liquid extraction to soft-matter neuromorphic electrical devices. While technologically and fundamentally important, there is a notable lack of chemical understanding regarding these buried interfaces due to challenges in differentiating species located at the surface from the nearby bulk phases. In this work, we will describe some of the challenges in probing chemistry at these liquid/liquid interfaces and detail the approaches we have developed using vibrational sum frequency generation to enable studies of these complex interfaces at and away from equilibrium. From these spectroscopic developments, new insight into solvation, ion pairing, aggregation, complexation, and transport will be discussed in the context of solvent extraction chemistry. Notably, we show how the presence of both oil and aqueous phases provides an environment to drive fundamentally different phenomena from what is observed at model air/aqueous interfaces. This difference arises from key differences in solvation and bulk populations that feedback onto the surface to drive emergent and often functional molecular assemblies.

Doughty, Benjamin L↗