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At least 1,063 records · Page 59

Genesis Solar Wind Sample Curation Documentation

Introduction: A scientist with experience as a sample science analyst, provider of flight hardware for multiple missions, and senior engineer in an ISO 2000-rated manufacturing plant has described the timeline of key participants in any PI-led sample return mission, the breadth of the organizations involved [1,2], and, of interest to this meeting, choosing the types of data to preserve and issues of future data accessibility. This work broadens that perspective by giving similar lessons from Genesis sample curation point-of-view. Curation participation regarding data gathering was part of the mission review process from the beginning. Genesis’ story illustrates outcome of several choices about types of data to record and preserve. Precision analysis of solar wind atoms captured in pure, ultraclean substrates is the driving science goal; therefore, detailed documentation was captured from all mission and curation phases and from investigator laboratories because these processes affect the final analytical results [3]. Pre-flight: Design and fabrication of the spacecraft. Like many modern small sample return missions, Genesis was a tightly managed team integrated across science, engineering and curation. Communication across the team was excellent, and, for the most part, the hands-on engineering technicians understood the impacts of “small choices” they routinely make, and the eyes-on oversight of manufacturing processes by scientists was mindful of details. The payload was designed by the Jet Propulsion Laboratory and the spacecraft by Lockheed Martin. Solar wind collectors and instruments were fabricated by multiple vendors and laboratories. The main portion of the payload was assembled at JSC. Fabrication procedures and contamination-control data (with witness coupons) were stored primarily at JSC. The original composition, dimensions and configuration of components, results of thermal testing, etc. are still needed for interpretation of analytical data. At times, these must be estimated from secondary information acquired pre-flight. Moreover, some files (e.g., original 3-D models and early Powerpoint) cannot be opened using software. Archived curation data includes 2-D drawings, material usage lists, QA documentation and analyses of consumables used during fabrication. Important chemical information still resides in archived hardware, paints and lubricants, material coupons, cleaning coupons, environmental witness plates and reference materials from manufacturing facilities. Purity and cleanliness of collector substrates. Semi-conductor vendors provided surface cleanliness data and some purity data. Purity for specific elements of interest was verified by science team members in their laboratories [4]. Curation archived procurement and shipping records, analysis reports, and non-proprietary fabrication data. A physical archive of flight collector reference materials is maintained for future use so additional data can be collected as analytical techniques improve. These are of increased value due to the hard landing upon re-entry. Cleaning and cleanliness assessments of flight hardware. Cleaning of the science canister payload was performed at JSC in a dedicated ISO 4 cleanroom using ultrapure water (UPW). The cleanliness of this UPW was monitored throughout processing. The archive for the clean lab also includes airborne particle counts, airborne molecular and inorganic contamination measurements as well as cleanroom construction material coupons and witness coupons. Hardware cleanliness was assessed by particle counts in rinse water batches. This information is recorded in batch cleaning forms and logbooks, and are, perhaps, of decreased value due to the hard landing. Post-flight: Curation-generated data. The curation handling history of each Genesis sample is documented in a typical astromaterials sample database which captures sample location, physical description and characterization data. Samples have a “shelf life”. Crucial to the preservation of samples is ongoing documentation of the sample environment, initially under curatorial control but is now a separate facility function with requires coordination. PI-generated data. Data on sample characterization and cleaning techniques continues to be generated by sample users [5]. These are often captured in LPSC abstracts, but these “engineering” results often are not publishable as stand-alone papers. We are actively looking for ways to make this information more accessible to users. Ion implants into samples have aided science return and can be shared among investigators. These (and similar) materials should be added to the curatorial collection with appropriate process and characterization data generated externally. Summary: Complete data archives for returned astromaterial samples must be broad in types and formats, and inclusive of environmental monitoring.

Genesis↗

Propagation of misfit dislocations from buffer/Si interface into Si

Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

36 MATERIALS SCIENCE↗

Polarization induced doped transistor

A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

36 MATERIALS SCIENCE↗

Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays

A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.

36 MATERIALS SCIENCE↗

Investigation of radiation damage tolerance in interface-containing metallic nano structures

The proposed work seeks to conduct a basic study by applying experimental and computational methods to obtain quantitative influence of helium sink strength and proximity on He bubble nucleation and growth in He-irradiated nano-scale metallic structures, and the ensuing deformation mechanisms and mechanical properties. We utilized a combination of nano-scale in-situ tension and compression experiments on low-energy He-irradiated samples combined with site-specific microstructural characterization and modeling efforts. We also investigated the mechanical deformation of nano-architected materials, i.e. nanolattices which are comprised of 3-dimensional interwoven networks of hollow tubes, with the wall thickness in the nanometer range. This systematic approach will provide us with critical information for identifying key factors that govern He bubble nucleation and growth upon irradiation as a function of both sink strength and sink proximity through an experimentally-confirmed physical understanding. As an outgrowth of these efforts, we performed irradiations with self-ions (Ni 2+ ) on Ni-Al-Zr metallic glass nanolattices to assess their resilience against radiation damage rather than He-ion implantation. We focused our attention on studying individual bcc/fcc interfaces within a single nano structure (nano-pillar or a hollow tube): a single Fe (bcc)-Cu (fcc) boundary per pillar oriented perpendicular to the pillar axes, as well as pure bcc and fcc nano structures. Additional interfaces of interest include bcc/bcc and metal/metallic glass all within a single nano-structure volume. The model material systems are: (1) pure single crystalline Fe and Cu, (2) a single Fe (bcc)-Cu (fcc) boundary per nano structure (3) a single metal–metallic glass, all oriented non-parallel to the loading direction so that their fracture strength can be tested. A nano-fabrication approach, which involves e-beam lithography and templated electroplating, as well as two-photon lithography, was utilized, which enabled precise control of the initial microstructure control. Experimentally determined stress-strain relationships were enhanced by in-situ SEM observations coupled with TEM microstructural characterization of the same samples before and after deformation (irradiated and as-fabricated) and atomistic (MD) modeling. A comprehensive suite of experiments was conducted to quantitatively assess the key parameters for He bubble nucleation and growth by independently varying the sink strength, sink proximity, and He implantation temperature and dose. The implantations were conducted at Sandia and Los Alamos National Labs (CINT). Nano structuress containing He-enriched interfaces and irradiation-damaged microstructure were tested under uniaxial tension to assess embrittlement, resulting boundary strength, and deformation mechanisms. Results of this work helped identify which types of interfaces are particularly resilient against radiation damage.

36 MATERIALS SCIENCE↗

PROGRESS IN THE STUDY OF ION IRRADIATION IN TUNGSTEN

The experimental study intends to generate data to validate the theoretical predictions on defect accumulation and recovery, as well as to investigate microstructural evolution and transmutant precipitation in mono- and poly-crystalline tungsten using ion implantation.

Environmental Molecular Sciences Laboratory↗

Towards Cryogen-Free SRF Particle Accelerators

Particle accelerators have been essential tools of particle physics since initial development in the early twentieth century, with commercial applications soon following each successive advancement. Furthermore, particle accelerators today are found in diverse use, ranging from ion-implantation of consumer electronics to both imaging and treatment of cancers.

43 PARTICLE ACCELERATORS↗

Reliable electrical contacts for high power photoconductive switches

A photoconductive switch consisting of an optically actuated photoconductive material, e.g. a wide bandgap semiconductor such as SiC, situated between opposing electrodes. The electrodes are created using various methods in order to maximize reliability by reducing resistive heating, current concentrations and filamentation, and heating and ablation due to the light source. This is primarily accomplished by the configuration of the electrical contact geometry, choice of contacts metals, annealing, ion implantation, creation of recesses within the SiC, and the use of coatings to act as encapsulants and anti-reflective layers.

42 ENGINEERING↗

Ion beam modification of noble metals for electrical contacts

Ion beam modification of noble metal electrical contact coatings can achieve suitable friction and wear behavior with inherently stable low ECR. For example, this method of producing Au electrical contact coatings can produce wear properties similar to electroplated hard Au, but without the environmental concerns due to stringent OSHA regulations on the use and disposal of toxic chemicals associated with Au electroplating baths. Integration of physical vapor deposition techniques with ion implantation can produce noble metal coatings with surfaces modified to achieve the desired balance between adhesion/friction/wear and electrical contact resistance on a commercial scale.

36 MATERIALS SCIENCE↗

Method of authenticating integrated circuits using optical characteristics of physically unclonable functions

A method and apparatus for reading unique identifiers of an integrated circuit. The unique identifiers may be physically unclonable functions (PUFs), formed by high energy ions implanted into semiconductor material of the integrated circuit. The method may include electrically or optically stimulating each of the PUFs and sensing with an optical sensor optical characteristics of resulting light emitted from the PUFs. Then the method may include comparing values associated with the optical characteristics of the PUFs with groups of stored values in a circuit database. Each of the groups of stored values may be associated with optical characteristics of PUFs of a known authentic circuit. The method may then include the controller providing verification of authenticity of the integrated circuit when each of the values associated with the optical characteristics of the PUFs match the stored values of at least one of the groups in the circuit database.

42 ENGINEERING↗

Doped passivated contacts

PolySi:Ga/SiO2 passivated contacts were prepared using ion implantation and dopant inks to introduce Ga into a-Si. Following crystallization anneals these p-type contacts exhibited improved passivation (iVoc of about 730 mV) over B-doped passivated contacts for solar cells.

Young, David Levi↗

Note: An ion source for alkali metal implantation beneath graphene and hexagonal boron nitride monolayers on transition metals

The construction of an alkali-metal ion source is presented. It allows the acceleration of rubidium ions to an energy that enables the penetration through monolayers of graphene and hexagonal boron nitride. Rb atoms are sublimated from an alkali-metal dispenser. The ionization is obtained by surface ionization and desorption from a hot high work function surface. The ion current is easily controlled by the temperature of ionizer. Scanning Tunneling Microscopy measurements confirm ion implantation.

36 MATERIALS SCIENCE↗

Friction wear and auger analysis of iron implanted with 1.5-MeV nitrogen ions

The effect of implantation of 1.5-MeV nitrogen ions on the friction and wear characteristics of pure iron sliding against steel was studied in a pin-on disk apparatus. An implantation dose of 5 x 10 to the 17th power ions/sq cm was used. Small reductions in initial and steady-state wear rates were observed for nitrogen-implanted iron riders as compared with unimplanted controls. Auger electron spectroscopy revealed a subsurface Gaussian nitrogen distribution with a maximum concentration of 15 at. % at a depth of 8 x 10 to the -7th m. A similar analysis within the wear scar of an implanted rider after 20 microns of wear yielded only background nitrogen concentration, thus giving no evidence for diffusion of nitrogen beyond the implanted range.

Ferrante, J.↗

Characterization of a cold cathode Penning ion source for the implantation of noble gases beneath 2D monolayers on metals: Ions and neutrals

Argon ion kinetic energy spectra at different discharge voltages (between 480 and 600 V) of a commercial cold cathode ion source IQP10/63 are reported. The high kinetic energy cut-off depends on the discharge voltage and the corresponding plasma potential due to excess positive charges which is found to be about 136 V. Exposure of single layer hexagonal boron nitride on rhodium to the beam of the ion source leads to the formation of nanotents, i.e., stable atomic protrusions. A positive bias voltage is applied to the target sample to block the positive ions produced by the ion source. However, application of a positive bias potential (800 eV), which is higher than the kinetic energy cut-off, still allows the formation of nanotents and its observation with scanning tunneling microscopy. This indicates that the ion source also produces neutral atoms with kinetic energies higher than the penetration threshold across a single layer of hexagonal boron nitride.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

PRECIPITATES AND VOIDS IN CUBIC SILICON CARBIDE IMPLANTED WITH 25Mg+ IONS

This study reports on the formation of 25Mg-bearing precipitates and voids in cubic phase silicon carbide (3C-SiC) single crystals implanted to 9.6×1016 25Mg+/cm2 at 673 K and subsequently annealed at 1073 and 1573 K for 2, 6 and 12 h in an Ar environment. Unidirectionally aligned tetrahedral precipitates are observed around the Mg profile peak, many of which are likely cubic MgC2 and tetragonal Mg2Si particles or their precursor structures. There is also evidence that suggests a possible formation of core (MgC2)-shell (Mg2Si) structure in some of the large precipitates. In addition, small spherical voids are observed near the surface, along with the larger faceted voids in the region of maximum vacancy concentration. 25Mg segregation takes place with a dominant fraction of small atomic clusters. The study provides important results needed to fully assess SiC for potential fusion applications.

Jiang, Weilin↗

Structural transition and recovery of Ge implanted β -Ga 2 O 3

Ion implantation-induced effects were studied in Ge implanted β-Ga 2 O 3 with the fluence and energy of 3 × 10 13 cm -2 /60 keV, 5 × 10 13 cm -2 /100 keV, and 7 × 10 13 cm -2 /200 keV using analytical electron microscopy via scanning/transmission electron microscopy, electron energy loss spectroscopy, and precession electron diffraction via TopSpin. Imaging shows an isolated band of damage after Ge implantation, which extends ~130 nm from the sample surface and corresponds to the projected range of the ions. Electron diffraction demonstrates that the entirety of the damage band is the κ phase, indicating an implantation-induced phase transition from β to κ-Ga 2 O 3 . Post-implantation annealing at 1150 °C for 60 s under the O 2 atmosphere led to a back transformation of κ to β; however, an ~17 nm damage zone remained at the sample surface. Despite the back transformation from κ to β with annealing, O K-edge spectra show changes in the fine structure between the pristine, implanted, and implanted-annealed samples, and topspin strain analysis shows a change in strain between the two samples. These data indicate differences in the electronic/chemical structure, where the change of the oxygen environment extended beyond the implantation zone (~130 nm) due to the diffusion of Ge into the bulk material, which, in turn, causes a tensile strain of 0.5%. This work provides a foundation for understanding of the effects of ion implantation on defect/phase evolution in β-Ga 2 O 3 and the related recovery mechanism, opening a window toward building a reliable device for targeted applications.

36 MATERIALS SCIENCE↗