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At least 1,063 records · Page 59

Implicit highly-coupled single-ion Hall-MHD formulation for hybrid particle-in-cell codes

The rudiments of a particle-based single-fluid two-temperature magnetohydrodynamic (MHD) algorithm have been outlined in Thoma et al. (2013). The extension of this algorithm to include the effect of Hall physics is described in this paper. An implicit leapfrog version of the algorithm, which allows timesteps large compared to the resistive decay time and other relevant timescales, has recently been added to a hybrid particle-in-cell code. In standard MHD the Hall term in the generalized Ohm’s law can often be neglected when the Hall parameter is small. This term must, however, be retained in regimes where it is non-negligible. The retention of displacement current in Maxwell’s equations avoids the numerical difficulties associated with the whistler mode, which are encountered in standard explicit Hall-MHD codes, and allows the algorithm to be incorporated into hybrid particle-in-cell codes, for which particles may migrate from a kinetic to fluid to MHD description based upon local ambient plasma conditions. A highly-coupled implicit Hall-MHD formalism is presented, in which displacement current can either be retained or neglected. Even when displacement current is neglected, the highly-coupled implicit formalism avoids the restrictive timesteps for the whistler mode in explicit Hall-MHD codes. A comparison of numerical and analytic dispersion analysis demonstrates the feasibility of this approach and establishes relevant constraints to assure numerical stability. The implementation of the algorithm is described, and test simulation results in 1D and 2D in both linear and nonlinear regimes are presented.

97 MATHEMATICS AND COMPUTING↗

Large Spin-Orbit-Torque Efficiency and Room-Temperature Magnetization Switching in Sr Ir O 3 / Co-Fe-B Heterostructures

Spin-orbit-torque (SOT) switching is a potentially energy-efficient mechanism by which electrical current can control magnetization. We demonstrate room-temperature SOT switching in nanometer-thick Co⁢Fe⁢B/Sr⁢Ir⁢O 3 bilayers despite the amorphous nature of CoFeB and the interface. This behavior is attributed to the large spin Hall angle in Sr⁢Ir⁢O 3 as well as high spin transmission at the interface that contribute to the SOT efficiency ξ SOT . Our bilayers exhibit large ξ SOT of up to 1.4 and effective spin Hall conductivity of 0.9 ×10 5 (ℏ/2e)Ω –1 ⁢m –1 . In our bilayers, we observe unidirectional magnetoresistance and current-induced magnetization switching with a low critical current density of 1.38 ×10 10 A/m 2 at room temperature. Finally, our results are promising for heterostructures combining technologically relevant CoFeB with high spin-orbit-coupling oxides.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Partial fillings of the bosonic $E$ 8 quantum Hall state

Here, we study bosonic topological phases constructed from electrons. In addition to a bulk excitation energy gap, these bosonic phases also have a fermion energy gap, below which all local excitations in the bulk and on the edge are even combinations of electrons. We focus on chiral phases, in which all low-energy edge excitations move in the same direction, that arise from the short-range entangled $E_8$ quantum Hall state, the bosonic analog of the filled lowest Landau level of electrons. The $E_8$ edge-state theory features an $E_8$ Kac-Moody symmetry that can be decomposed into ${\cal G}_A \times {\cal G}_B$ subalgebras, such as $SU(3) \times E_6$, $SO(M) \times SO(16-M)$, and $G_2 \times F_4$. (Here, $\{SO(M) \}$, $\{SU(N)\}$, and $\{E_8, G_2, F_4 \}$ denote orthogonal, unitary, and exceptional Lie algebras.) Using these symmetry decompositions, we construct exactly solvable coupled-wire model Hamiltonians for families of long-range entangled ${\cal G}_A$ or ${\cal G}_B$ bosonic fractional quantum Hall states that "partially fill" the $E_8$ state and are pairwise related by a generalized particle-hole symmetry. These long-range entangled states feature either Abelian or non-Abelian topological order. Some support the emergence of non-local Dirac and Majorana fermions, Ising anyons, metaplectic anyons, Fibonacci anyons, as well as deconfined $\mathbb{Z}_2$ gauge fluxes and charges.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Chiral Anomaly in Interacting Condensed Matter Systems

The chiral anomaly is a fundamental quantum mechanical phenomenon which is of great importance to both particle physics and condensed matter physics alike. In the context of QED, it manifests as the breaking of chiral symmetry in the presence of electromagnetic fields. It is also known that anomalous chiral symmetry breaking can occur through interactions alone, as is the case for interacting one-dimensional systems. In this Letter, we investigate the interplay between these two modes of anomalous chiral symmetry breaking in the context of interacting Weyl semimetals. Using Fujikawa’s path integral method, we show that the chiral charge continuity equation is modified by the presence of interactions which can be viewed as including the effect of the electric and magnetic fields generated by the interacting quantum matter. This can be understood further using dimensional reduction and a Luttinger liquid description of the lowest Landau level. These effects manifest themselves in the nonlinear response of the system. In particular, we find an interaction-dependent density response due to a change in the magnetic field as well as a contribution to the nonequilibrium and inhomogeneous anomalous Hall response while preserving its equilibrium value.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Strain-tuning of domain walls in multilayer graphene probed in the quantum Hall regime

Domain walls, topological defects that define the frontier between regions of different stacking order in multilayer graphene, have proved to host exciting physics. The ability to tune these topological defects in situ in an electronic transport experiment brings a wealth of possibilities in terms of fundamental understanding of domain walls as well as for electronic applications. Here, we demonstrate, through a MEMS (microelectromechanical system) actuator and magnetoresistance measurements, the effect of domain walls in multilayer graphene quantum Hall effect. Reversible and controlled uniaxial strain triggers the topological defects, manifested as addtional quantum Hall effect plateaus as well as a discrete and reversible modulation of the current across the device. Furthermore, our findings are supported by theoretical calculations and constitute indication of the in situ tuning of topological defects in multilayer graphene probed through electronic transport, opening the way for the use of reversible topological defects in electronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ion Voltage Diagnostics in the Far-Field Plume of a High-Specific Impulse Hall Thruster

The effects of the magnetic field and discharge voltage on the far-field plume of the NASA 173Mv2 laboratory-model Hall thruster were investigated. A cylindrical Langmuir probe was used to measure the plasma potential and a retarding potential analyzer was employed to measure the ion voltage distribution. The plasma potential was affected by relatively small changes in the external magnetic field, which suggested a means to control the plasma surrounding the thruster. As the discharge voltage increased, the ion voltage distribution showed that the acceleration efficiency increased and the dispersion efficiency decreased. This implied that the ionization zone was growing axially and moving closer to the anode, which could have affected thruster efficiency and lifetime due to higher wall losses. However, wall losses may have been reduced by improved focusing efficiency since the total efficiency increased and the plume divergence decreased with discharge voltage.

Hofer, Richard R.↗

Effects of Thermal and Mechanical Processing on Microstructures and Desired Properties of Particle-Strengthened Cu-Cr-Nb Alloys

Ternary Cu-Cr-Nb alloys, particularly Cu-8 Cr-4 Nb (in at.%), have demonstrated good thermal stability as well as high strength and conductivity at elevated temperatures. The initial powder material has a bimodal size distribution of Cr2Nb precipitates. Primary Cr2Nb precipitates are approx. 1 micron, and secondary Cr2Nb particles are 30-200 nm. The particle coarsening was analyzed and found to follow LSW-type behavior, This study provides a detailed examination of the stability and strengthening effects of Cr2Nb particles. This investigation also revealed that the primary particles provide direct grain boundary pinning and indirect grain boundary strengthening but virtually no Orowan strengthening. The secondary particles found within grains do provide Orowan strengthening. For extruded material, grain bound-ary strengthening (Hall-Petch effect) accounts for two-thirds of the strength with Orowan effects contributing the remainder. The proven advantages of Cu-Cr-Nb were the motivation to improve these attributes via microstructural refinement. Mechanical milling (MM) of Cu- 4 Cr-2 Nb and Cu-8 Cr-2 Nb produced an increase in hot pressed Vickers hardness of 122% and 96%, respectively. The increase in hardness was more due to Cu grain-size refinement than to Cr,,Nb refinement. This study also demonstrated enhanced stability of MM Cu-4 Cr-2 Nb. Hot pressed 4 h milled Cu-4 Cr-2 Nb experienced only a 22% drop in hardness when annealed at 1273 K for 50 h versus a 30% drop for extruded Cu-8 Cr-4 Nb. The goal of improving the strength and stability of Cu-4 Cr-2 Nb to better than such properties for as- extruded Cu-8 Cr-4 Nb has been met. In addition, a figure-of-merit (FOM) coupling hardness and thermal conductivity was maximized for the case of 4 h milled Cu-4 Cr-2 Nb material. Overall, Cu-Cr-Nb alloys not only possess high strength, conductivity and thermal stability but also can be further developed to improve strength and stability.

Anderson, Kenneth Reed↗

Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide

Here, the interplay of stress, disorder, and Coulomb screening dictating the mobility of doped cadmium oxide (CdO) is examined using Raman spectroscopy to identify the mechanisms driving dopant incorporation and scattering within this emerging infrared optical material. Specifically, multi-wavelength Raman and UV-vis spectroscopies are combined with electrical Hall measurements on a series of yttrium (X = Y) and indium (X = In) doped X:CdO thin-films. Hall measurements confirm n-type doping and establish carrier concentrations and mobilities. Spectral fitting along the low-frequency Raman combination bands, especially the TA+TO(X) mode, reveals that the evolution of strain and disorder within the lattice as a function of dopant concentration is strongly correlated with mobility. Coupling between the electronic and lattice environments was examined through analysis of first- and second-order longitudinal–optical phonon–plasmon coupled modes that monotonically decrease in energy and asymmetrically broaden with increasing dopant concentration. By fitting these trends to an impurity-induced Fröhlich model for the Raman scattering intensity, exciton–phonon and exciton–impurity coupling factors are quantified. These coupling factors indicate a continual decrease in the amount of ionized impurity scattering with increasing dopant concentration and are not as well correlated with mobility. This shows that lattice strain and disorder are the primary determining factors for mobility in donor-doped CdO. In aggregate, the study confirms previously postulated defect equilibrium arguments for dopant incorporation in CdO while at the same time identifying paths for its further refinement.

42 ENGINEERING↗

Plasma Oscillation Characterization of NASA's HERMeS Hall Thruster via High Speed Imaging

The performance and facility effect characterization tests of NASA's 12.5-kW Hall Effect Rocket with Magnetic Shielding had been completed. As a part of these tests, three plasma oscillation characterization studies were performed to help determine operation settings and quantify margins. The studies included the magnetic field strength variation study, background pressure effect study, and cathode flow fraction study. Separate high-speed videos of the thruster including the cathode and of only the cathode were recorded. Breathing mode at 10-15 kHz and cathode gradient-driven mode at 60-75 kHz were observed. An additional high frequency (40-70 kHz) global oscillation mode with sinusoidal probability distribution function was identified.

Ground Tests↗

Skyrmion crystal from RKKY interaction mediated by 2D electron gas

We consider a $C_6$ invariant lattice of magnetic moments coupled via a Kondo exchange $J$ with a 2D electron gas (2DEG). The effective Ruderman-Kittel-Kasuya-Yosida interaction between the moments stabilizes a magnetic skyrmion crystal in the presence of magnetic field and easy-axis anisotropy. An attractive aspect of this mechanism is that the magnitude of the magnetic ordering wave vectors, $Q_ν(ν=1,2, 3)$, is dictated by the Fermi wave number $k_F:|Q_ν|=2k_F$. Consequently, the topological contribution to the Hall conductivity of the 2DEG becomes of the order of the quantized value, $e^2/h$, when $J$ is comparable to the Fermi energy $ε_F$.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Selective enhancement of Coulomb interactions in planar Weyl fermions

We report on our study of the electron interaction effects in topological two-dimensional (2D) materials placed in a quantizing magnetic field. Taking our cue from a recent experimental report, we consider a particular case of bismuthene monolayer with a strong spin-orbit interaction which can be a Weyl semimetal when placed on a specially tuned substrate. Interestingly, we observe that in some Landau levels of this material, the interaction effects are enhanced compared to those for a conventional 2D system and graphene monolayer. Such an enhancement of electron-electron interactions in these materials is largely due to an anisotropy present in the materials. Additionally, the interaction effects can be tuned by changing the coupling to the substrate and the strongest inter-electron interactions are observed when the system is a Weyl semimetal. Furthermore, the observed enhancement of the interaction effects can therefore be an important signature of the 2D Weyl fermions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The Effects of Annealing after Equal Channel Angular Extrusion (ECAE) on Mechanical and Magnetic Properties of 49Fe-49Co-2V Alloy

Equal channel angular extrusion (ECAE) of 49Fe-49Co-2V, also known as Hiperco® 50A or Permendur-2V, greatly improves the strength and ductility of this alloy, while sacrificing soft magnetic performance. In this work, ECAE Hiperco specimens were subjected to post-ECAE annealing in order to improve soft magnetic properties. The microstructure, mechanical properties, and magnetic performance are summarized in this study. Annealing begins above 650°C and a steep decline in yield strength is observed for heat treatments between 700 and 840°C due to grain growth and the Hall-Petch effect, although some strength benefit is still observed in fully annealed ECAE material compared to conventionally processed bar. Soft magnetic properties were assessed through B-H hysteresis curves from which coercivity (Hc) values were extracted. Hc decreases rapidly with annealing above 650°C as well, i.e. improved soft magnetic behavior. The observed trend is attributed to annealing and grain growth in this temperature regime, which facilitates magnetic domain wall movement. The coercivity vs. grain size results generally follow the trend predicted in the literature. The magnetic behavior of annealed ECAE material compares favorably to conventional bar, possibly due to mild crystallographic texturing which enhances properties in the post-ECAE annealed material. Overall, this study highlights a definitive tradeoff between mechanical and magnetic properties brought about by post-ECAE annealing and grain growth.

annealing↗

Parametric dependencies of resonant layer responses across linear, two-fluid, drift-MHD regimes

Non-axisymmetric magnetic fields arising in a tokamak either by external or internal perturbations can induce complex non-ideal MHD responses in their resonant surfaces while remaining ideally evolved elsewhere. This layer response can be characterized in a linear regime by a single parameter called the inner-layer Δ, which enables outer-layer matching and the prediction of torque balance to non-linear island regimes. In this work, we follow strictly one of the most comprehensive analytic treatments including two-fluid and drift MHD effects and keep the fidelity of the formulation by incorporating the numerical method based on the Riccati transformation when quantifying the inner-layer Δ. The proposed scheme reproduces not only the predicted responses in essentially all asymptotic regimes but also with continuous transitions as well as improved accuracies. In particular, the Δ variations across the inertial regimes with viscous or semi-collisional effects have been further resolved, in comparison with additional analytic solutions. The results imply greater shielding of the electromagnetic torque at the layer than what would be expected by earlier work when the viscous or semi-collisional effects can compete against the inertial effects, and also due to the intermediate regulation by kinetic Alfvén wave resonances as rotation slows down. These are important features that can alter the non-axisymmetric plasma responses including the field penetration by external fields or island seeding process in rotating tokamak plasmas.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Geometric origin of the intrinsic transverse spin transport in a canted-antiferromagnet/heavy-metal heterostructure

We theoretically study the conditions under which an intrinsic spin Nernst effect–a transverse spin current induced by an applied temperature gradient–can occur in a canted-antiferromagnet insulator, such as LaFeO 3 and other materials of the same family. The spin Nernst effect may provide a microscopic mechanism for an experimentally observed anomalous thermovoltage in LaFeO 3 /Pt heterostructures, where spin is transferred across the insulator/metal interface when a temperature gradient is applied to LaFeO 3 parallel to the interface. We find that LaFeO 3 exhibits an intrinsic spin Nernst effect when inversion symmetry is broken on the axes parallel to both the applied temperature gradient and the direction of spin transport, which can result in a spin injection across the insulator/metal interface. Furthermore, our paper provides a general derivation of a symmetry-breaking-induced spin Nernst effect, which may open a path to engineering a finite spin Nernst effect in systems where it would otherwise not arise.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A predictive strain-gradient model with no undetermined constants or length scales

A general meso–scale (GM) crystal plasticity (CP) model was developed that accounts for lower-order (strain hardening) and higher-order (internal stress) effects of geometrically necessary dislocations (GNDs). It is predictive: no arbitrary parameters or length scales were invoked and no ad hoc numerical techniques were employed. It uses general stress field equations for GND content and a novel harmonization technique to enforce consistency of elastic long-range singular defect fields with applied elastic-plastic fields. The model facilitates implementation in commercial finite element programs without requiring special elements, special boundary conditions, or access to element shape functions. GM simulations confirmed, with improved accuracy, previously published predictions of the Hall-Petch effect, Bauschinger effect, and anelasticity. Previously unpredicted phenomena were also predicted: anelasticity and hysteresis for single Ta crystals and strain-hardening stagnation. The internal stresses (higher-order effect) dominate at large length scales, while at small length scales, the GND density hardening (lower-order effect) dominates. As a result, GM predicts that strain heterogeneity and consequent GND internal stresses are important factors in anelasticity.

36 MATERIALS SCIENCE↗

Thermomagnetic responses of semimetals

Solid-state thermomagnetic modules operating based on the Nernst–Ettingshausen effects are an alternative to conventional solid-state thermoelectric modules. These modules are appropriate for low-temperature applications where the thermoelectric modules are not efficient. Here, we briefly discuss the application, performance, similarities, and differences of thermoelectric and thermomagnetic materials and modules. We review thermomagnetic module design, Nernst coefficient measurement techniques, and theoretical advances, emphasizing the Nernst effect and factors influencing its response in semimetals such as carrier compensation, Fermi surface, mobility, phonon drag, and Berry curvature. The main objective is to summarize the materials design criteria to achieve high thermomagnetic performance to accelerate thermomagnetic materials discovery.

42 ENGINEERING↗

Record-quality GaAs two-dimensional hole systems

The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport phenomena. Here we report ultra-high-quality (001) GaAs 2D hole systems, fabricated using molecular beam epitaxy and modulation doping, with mobility values as high as 5.8 × 10 6 cm 2 /(V s) at a hole density of p = 1.3 × 10 11 /cm 2 , implying a mean free path of ≃ 27 μm. In the low-temperature magnetoresistance trace of this sample, we observe high-order fractional quantum Hall states up to the Landau level filling ν = 12/25 near ν = 1/2. Furthermore, we see a deep minimum develop at ν = 1/5 in the magnetoresistance of a sample with a much lower hole density of p = 4.0 × 10 10 /cm 2 where we measure a mobility of 3.6 × 10 6 cm2/(V s). Finally, these improvements in sample quality were achieved by the reduction of residual impurities both in the GaAs channel and in the AlGaAs barrier material, as well as optimization in the design of the sample structure.

2-dimensional systems↗