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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,063 records · Page 59
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Quantum pixel representations and compression for N-dimensional images

Abstract We introduce a novel and uniform framework for quantum pixel representations that overarches many of the most popular representations proposed in the recent literature, such as (I)FRQI, (I)NEQR, MCRQI, and (I)NCQI. The proposed QPIXL framework results in more efficient circuit implementations and significantly reduces the gate complexity for all considered quantum pixel representations. Our method scales linearly in the number of pixels and does not use ancilla qubits. Furthermore, the circuits only consist of $$R_y$$ R y gates and $$\text {CNOT}$$ CNOT gates making them practical in the NISQ era. Additionally, we propose a circuit and image compression algorithm that is shown to be highly effective, being able to reduce the necessary gates to prepare an FRQI state for example scientific images by up to 90% without sacrificing image quality. Our algorithms are made publicly available as part of , a Quantum Image Pixel Library.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Insulator-to-metal phase transition in a few-layered MoSe 2 field effect transistor

The metal-to-insulator phase transition (MIT) in low-dimensional materials and particularly two-dimensional layered semiconductors is exciting to explore due to the fact that it challenges the prediction that a two-dimensional system must be insulating at low temperatures. Thus, the exploration of MITs in 2D layered semiconductors expands the understanding of the underlying physics. Here we report the MIT of a few-layered MoSe 2 field effect transistor under a gate bias (electric field) applied perpendicular to the MoSe 2 layers. With low applied gate voltage, the conductivity as a function of temperature from 150 K to 4 K shows typical semiconducting to insulating character. Above a critical applied gate voltage, V c , the conductivity becomes metallic (i.e., the conductivity increases continuously as a function of decreasing temperature). Evidence of a metallic state was observed using an applied gate voltage or, equivalently, increasing the density of charge carriers within the 2D channel. We analyzed the nature of the phase transition using percolation theory, where conductivity scales with the density of charge carriers as σ ∝ (n - n c ) δ . The critical exponent for a percolative phase transition, δ(T), has values ranging from 1.34 (at T = 150 K) to 2 (T = 20 K), which is close to the theoretical value of 1.33 for percolation to occur. Thus we conclude that the MIT in few-layered MoSe 2 is driven by charge carrier percolation. Finally, the conductivity does not scale with temperature, which is a hallmark of a quantum critical phase transition.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Integration of high permittivity BaTiO 3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

In this Letter, we discuss AlGaN/GaN HEMTs integrated with high permittivity BaTiO 3 dielectric to enable enhanced breakdown characteristics. We show that using high permittivity BaTiO 3 dielectric layers in the gate and drain access regions prevents premature gate breakdown, leading to average breakdown fields exceeding 3 MV/cm at a gate-to-drain spacing of 4 μm. The higher breakdown fields enable a high power figure of merit above 2.4 GW/cm 2 in devices with a gate-to-drain spacing of 6 μm. This work demonstrates that electrostatic engineering using high-permittivity dielectrics can enable AlGaN/GaN HEMTs in approaching the material breakdown field limits.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Characterization of the upgraded single-line-of-sight time-resolved x-ray imager using short-pulse visible and UV lasers

The single-line-of-sight time-resolved x-ray imager (SLOS-TRXI), a fast-gated x-ray imager used for capturing x-ray self-emission in inertial confinement fusion experiments on OMEGA, has been upgraded and characterized. SLOS-TRXI combines an electron-dilation imager and a hybrid complementary metal–oxide–semiconductor (hCMOS) sensor to capture multiple gated frames on a single line of sight with a temporal resolution of ~40 ps and a spatial resolution of 10 µm. The original hCMOS sensor with four frames was replaced with a newer-generation hCMOS sensor having eight frames. Gate characterizations of both the sensor and the entire SLOS-TRXI diagnostic were performed using ~10-ps FWHM visible (2ω) and UV (4ω) short-pulse lasers, respectively. A stepped echelon was used to generate a train of five UV laser pulses having an interpulse separation of 30 ± 3 ps. Characterization results of the hCMOS gating (2.28 ± 0.02-ns FWHM on average) and a temporal resolution of the upgraded SLOS-TRXI (34 ± 4-ps FWHM on average) are presented. A temporal magnification for the electron-dilation imager between 40 and 60 was inferred from the characterization results. Furthermore, the spatial resolution of the upgraded SLOS-TRXI remains the same in light of this work.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Symmetry dilemmas in quantum computing for chemistry: A comprehensive analysis

Symmetry adaptation, universality, and gate efficiency are central but often competing requirements in quantum algorithms for electronic structure and many-body physics. For example, fully symmetry-adapted universal operator pools typically generate long and deep quantum circuits; gate-efficient universal operator pools generally break symmetries; and gate-efficient, fully symmetry-adapted operator pools may not be universal. In this work, we analyze such symmetry dilemmas both theoretically and numerically. On the theory side, we prove that the popular, gate-efficient operator pool consisting of singlet spin-adapted singles and perfect-pairing doubles is not universal when spatial symmetry is enforced. To demonstrate the strengths and weaknesses of the three types of pools, we perform numerical simulations using an adaptive algorithm paired with operator pools that are (i) fully symmetry-adapted and universal, (ii) fully symmetry-adapted and non-universal, and (iii) breaking a single symmetry and universal. Our numerical simulations encompass three physically relevant scenarios in which the target state is (i) the global ground state, (ii) the ground state crossed by a state differing in multiple symmetry properties, and (iii) the ground state crossed by a state differing in a single symmetry property. Our results show when symmetry-breaking but universal pools can be used safely, when enforcing at least one distinguishing symmetry suffices, and when a particular symmetry must be rigorously preserved to avoid variational collapse. Together, the formal and numerical analyses provide a practical guide for designing and benchmarking symmetry-adapted operator pools that balance universality, resource requirements, and robust state targeting in quantum simulations for chemistry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Coupling of Ca 2+ and voltage activation in BK channels through the αB helix/voltage sensor interface

Large-conductance Ca 2+ and voltage-activated K + (BK) channels control membrane excitability in many cell types. BK channels are tetrameric. Each subunit is composed of a voltage sensor domain (VSD), a central pore-gate domain, and a large cytoplasmic domain (CTD) that contains the Ca 2+ sensors. While it is known that BK channels are activated by voltage and Ca 2+ , and that voltage and Ca 2+ activations interact, less is known about the mechanisms involved. In this work we explore these mechanisms by examining the gating contribution of an interface formed between the VSDs and the αB helices located at the top of the CTDs. Proline mutations in the αB helix greatly decreased voltage activation while having negligible effects on gating currents. Analysis with the Horrigan, Cui, and Aldrich model indicated a decreased coupling between voltage sensors and pore gate. Proline mutations decreased Ca 2+ activation for both Ca 2+ bowl and RCK1 Ca 2+ sites, suggesting that both high-affinity Ca 2+ sites transduce their effect, at least in part, through the αB helix. Mg 2+ activation also decreased. The crystal structure of the CTD with proline mutation L390P showed a flattening of the first helical turn in the αB helix compared to wild type, without other notable differences in the CTD, indicating that structural changes from the mutation were confined to the αB helix. These findings indicate that an intact αB helix/VSD interface is required for effective coupling of Ca 2+ binding and voltage depolarization to pore opening and that shared Ca 2+ and voltage transduction pathways involving the αB helix may be involved.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2023

Fermionic quantum processing with programmable neutral atom arrays

Simulating the properties of many-body fermionic systems is an outstanding computational challenge relevant to material science, quantum chemistry, and particle physics.-5.4pc]Please note that the spelling of the following author names in the manuscript differs from the spelling provided in the article metadata: D. González-Cuadra, D. Bluvstein, M. Kalinowski, R. Kaubruegger, N. Maskara, P. Naldesi, T. V. Zache, A. M. Kaufman, M. D. Lukin, H. Pichler, B. Vermersch, Jun Ye, and P. Zoller. The spelling provided in the manuscript has been retained; please confirm. Although qubit-based quantum computers can potentially tackle this problem more efficiently than classical devices, encoding nonlocal fermionic statistics introduces an overhead in the required resources, limiting their applicability on near-term architectures. In this work, we present a fermionic quantum processor, where fermionic models are locally encoded in a fermionic register and simulated in a hardware-efficient manner using fermionic gates. We consider in particular fermionic atoms in programmable tweezer arrays and develop different protocols to implement nonlocal gates, guaranteeing Fermi statistics at the hardware level. We use this gate set, together with Rydberg-mediated interaction gates, to find efficient circuit decompositions for digital and variational quantum simulation algorithms, illustrated here for molecular energy estimation. Finally, we consider a combined fermion-qubit architecture, where both the motional and internal degrees of freedom of the atoms are harnessed to efficiently implement quantum phase estimation as well as to simulate lattice gauge theory dynamics.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2020

Noise resilience of variational quantum compiling

Variational hybrid quantum-classical algorithms (VHQCAs) are near-term algorithms that leverage classical optimization to minimize a cost function, which is efficiently evaluated on a quantum computer. Recently VHQCAs have been proposed for quantum compiling, where a target unitary U is compiled into a short-depth gate sequence V. In this work, we report on a surprising form of noise resilience for these algorithms. Namely, we find one often learns the correct gate sequence V (i.e. the correct variational parameters) despite various sources of incoherent noise acting during the cost-evaluation circuit. Our main results are rigorous theorems stating that the optimal variational parameters are unaffected by a broad class of noise models, such as measurement noise, gate noise, and Pauli channel noise. Furthermore, our numerical implementations on IBM's noisy simulator demonstrate resilience when compiling the quantum Fourier transform, Toffoli gate, and W-state preparation. Hence, variational quantum compiling, due to its robustness, could be practically useful for noisy intermediate-scale quantum devices. Finally, we speculate that this noise resilience may be a general phenomenon that applies to other VHQCAs such as the variational quantum eigensolver.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Single-ion addressing via trap potential modulation in global optical fields

To date, individual addressing of ion qubits has relied primarily on local Rabi or transition frequency differences between ions created via electromagnetic field spatial gradients or via ion transport operations. Alternatively, it is possible to synthesize arbitrary local one-qubit gates by leveraging local phase differences in a global driving field. Here we report individual addressing of 40 Ca + ions in a two-ion crystal using axial potential modulation in a global gate laser field. We characterize the resulting gate performance via one-qubit randomized benchmarking, applying different random sequences to each co-trapped ion. We identify the primary error sources and compare the results with single-ion experiments to better understand our experimental limitations. These experiments form a foundation for the universal control of two ions, confined in the same potential well, with a single gate laser beam.

quantum computing↗
DOE OSTI2024

Hamiltonian switching control of noisy bipartite qubit systems

Abstract We develop a Hamiltonian switching ansatz for bipartite control that is inspired by the quantum approximate optimization algorithm, to mitigate environmental noise on qubits. We demonstrate the control for a central spin coupled to bath spins via isotropic Heisenberg interactions, and then make physical applications to the protection of quantum gates performed on superconducting transmon qubits coupling to environmental two-level-systems (TLSs) through dipole-dipole interactions, as well as on such qubits coupled to both TLSs and a Lindblad bath. The control field is classical and acts only on the system qubits. We use reinforcement learning with policy gradient to optimize the Hamiltonian switching control protocols, using a fidelity objective for specific target quantum gates. We use this approach to demonstrate effective suppression of both coherent and dissipative noise, with numerical studies achieving target gate implementations with fidelities over 0.9999 (four nines) in the majority of our test cases and showing improvement beyond this to values of 0.999 999 999 (nine nines) upon a subsequent optimization by GRadient Ascent Pulse Engineering (GRAPE). We analyze how the control depth, total evolution time, number of environmental TLS, and choice of optimization method affect the fidelity achieved by the optimal protocols and reveal some critical behaviors of bipartite control of quantum gates.

Physics↗
DOE OSTI2024

Twisty-puzzle-inspired approach to Clifford synthesis

The problem of decomposing an arbitrary Clifford element into a sequence of Clifford gates is known as Clifford synthesis. Drawing inspiration from similarities between this and the famous Rubik's cube twisty puzzle, here we develop a machine learning approach for Clifford synthesis based on learning an approximation to the distance to the identity. This approach is probabilistic and computationally intensive. However, when a decomposition is successfully found, it often involves fewer gates than the decomposition methods used in the Qiskit decomposition protocol, which uses a combination of several well-known Clifford decomposition schemes. Additionally, our approach is much more flexible than existing algorithms in that arbitrary gate sets, device topologies, and gate fidelities may be incorporated, thus allowing for the approach to be tailored to a specific device.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

Electrically controlled two-dimensional electron-hole fluids

We study the electronic properties of dual-gated electron-hole bilayers in which the two layers are separated by a perfectly opaque tunnel barrier. Combining an electrostatic and thermodynamic analysis with mean-field theory estimates of interacting system chemical potentials, we explain the dependence of the electron and hole densities on the two gate voltages. Because chemical potential jumps occur for both electrons and holes at neutrality, there is a finite area in gate voltage parameter space over which electron and hole densities are equal. In that regime the electron-hole pair density depends only on the sum of the two gate voltages. As a result, we are able to explain a recent experimental study of electrically controlled bilayers by allowing for interlayer tunneling and using a nonequilibrium steady-state transport picture.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Slow thermalization and subdiffusion in $U$(1) conserving Floquet random circuits

Random quantum circuits are paradigmatic models of minimally structured and analytically tractable chaotic dynamics. We study a family of Floquet unitary circuits with Haar random U(1) charge conserving dynamics; the minimal such model has nearest-neighbor gates acting on spin-1/2 qubits, and a single layer of even/odd gates repeated periodically in time. We find that this minimal model is not robustly thermalizing at numerically accessible system sizes, and displays slow subdiffusive dynamics for long times. We map out the thermalization dynamics in a broader parameter space of charge conserving circuits, and understand the origin of the slow dynamics in terms of proximate localized and integrable regimes in parameter space. In contrast, we find that small extensions to the minimal model are sufficient to achieve robust thermalization; these include (i) increasing the interaction range to three-site gates, (ii) increasing the local Hilbert space dimension by appending an additional unconstrained qubit to the conserved charge on each site, or (iii) using a larger Floquet period comprised of two independent layers of gates. Furthermore, our results should inform future studies of charge conserving circuits, which are relevant for a wide range of topical theoretical questions.

1-dimensional spin chains↗
DOE OSTI2024

Spectral evidence for local-moment ferromagnetism in the van der Waals metals $\mathrm{Fe_3GaTe_2}$ and $\mathrm{Fe_3GeTe_2}$

Magnetism in two-dimensional (2D) materials has attracted considerable attention recently for both fundamental understanding of magnetism and its tunability towards device applications. The isostructural Fe 3 GeTe 2 and Fe 3 GaTe 2 are two members of the Fe-based van der Waals (vdW) ferromagnet family, but exhibit very different Curie temperatures (T C ) of 210 and 360 K, respectively. In this report by using angle-resolved photoemission spectroscopy and density functional theory, we systematically compare the electronic structures of the two compounds. Qualitative similarities in the Fermi surface can be found between the two compounds, with expanded hole pockets in Fe 3 GaTe 2 suggesting additional hole carriers compared to Fe 3 GeTe 2 . Interestingly, we observe almost no band shift in Fe 3 GaTe 2 across its T C of 360 K, compared to a small shift in Fe 3 GeTe 2 across its T C of 210 K. The weak temperature-dependent evolution strongly deviates from the expectations of an itinerant Stoner mechanism. Our results suggest that itinerant electrons have minimal contributions to the enhancement of T C in Fe 3 GaTe 2 compared to Fe 3 GeTe 2 , and that the nature of ferromagnetism in these Fe-based vdW ferromagnets must be understood with considerations of the electron correlations.

36 MATERIALS SCIENCE↗
DOE OSTI2021

High-Fidelity Bell-State Preparation with 40 Ca + Optical Qubits

Entanglement generation in trapped-ion systems has relied thus far on two distinct but related geometric phase gate techniques: Mølmer-Sørensen and light-shift gates. We recently proposed a variant of the light-shift scheme where the qubit levels are separated by an optical frequency [B. C. Sawyer and K. R. Brown, Phys. Rev. A 103, 022427 (2021)]. Here, in this study, we report an experimental demonstration of this entangling gate using a pair of 40 Ca + ions in a cryogenic surface-electrode ion trap and a commercial, high-power, 532 nm Nd:YAG laser. Generating a Bell state in 35 μs, we directly measure an infidelity of 6(3) × 10 −4 without subtraction of experimental errors. The 532 nm gate laser wavelength suppresses intrinsic photon scattering error to ∼1 × 10 −5 .

Clark, Craig R.↗
DOE OSTI2025

Offset Charge Dependence of Measurement-Induced Transitions in Transmons

A key challenge in achieving scalable fault tolerance in superconducting quantum processors is readout fidelity, which lags behind one- and two-qubit gate fidelity. A major limitation in improving qubit readout is measurement-induced transitions, also referred to as qubit ionization, caused by multiphoton qubit-resonator excitation occurring at specific photon numbers. Since ionization can involve highly excited states, it has been predicted that in transmons—the most widely used superconducting qubit—the photon number at which measurement-induced transitions occur is gate-charge dependent. This dependence is expected to persist deep in the transmon regime where the qubit frequency is gate-charge insensitive. We experimentally confirm this prediction by characterizing measurement-induced transitions with increasing resonator photon population while actively calibrating the transmon’s gate charge. Furthermore, because highly excited states are involved, achieving quantitative agreement between theory and experiment requires accounting for higher-order harmonics in the transmon Hamiltonian.

Quantum circuits↗
DOE OSTI2022

Real-time Condition Monitoring of Power Modules in Grid-tied Power Converter

This paper proposes and demonstrates a real-time condition monitoring method using gate driver integrated sensing circuits and sensor fusion algorithms. Power device on-state voltage (VDSon) measurement and junction temperature (Tj) sensing circuits with high noise immunity are built and integrated into an adaptive gate driver circuit for power modules. Considering the inherently noisy measurement environment of power converters, VDSon together with several other measurements are fused together to provide accurate descriptions of the stress and degradation of each power device. Furthermore, the gate driver circuit can actively control the turn-on gate voltage (VGSon) for each device based on the stress and degradation state. The proposed sensing circuits and power device condition assessment algorithms are implemented in a 75 KVA grid-tied power converter. This paper focuses on the sensing circuits hardware designs and testing in grid-tied power converter prototype and device stress index generation. More comprehensive results on the device state of health index generation will be presented in future work.

Fan, Junchong↗
DOE OSTI2022

Scaling Superconducting Quantum Computers with Chiplet Architectures

Fixed-frequency transmon quantum computers (QCs) have advanced in coherence times, addressability, and gate fidelities. Unfortunately, these devices are restricted by the number of on-chip qubits, capping processing power and slowing progress toward fault-tolerance. Although emerging transmon devices feature over 100 qubits, building QCs large enough for meaningful demonstrations of quantum advantage requires overcoming many design challenges. For example, today’s transmon qubits suffer from significant variation due to limited precision in fabrication. As a result, barring significant improvements in current fabrication techniques, scaling QCs by building ever larger individual chips with more qubits is hampered by device variation. Severe device variation that degrades QC performance is referred to as a defect. Here, we focus on a specific defect known as a frequency collision. When transmon frequencies collide, their difference falls within a range that limits two-qubit gate fidelity. Frequency collisions occur with greater probability on larger QCs, causing collision-free yields to decline as the number of on-chip qubits increases. As a solution, we propose exploiting the higher yields associated with smaller QCs by integrating quantum chiplets within quantum multi-chip modules (MCMs). Yield, gate performance, and application-based analysis show the feasibility of QC scaling through modularity. Our results demonstrate that chiplet architectures, relative to monolithic designs, benefit from average yield improvements ranging from 9.6 – 92.6 × for ≲5 qubit machines. In addition, our simulations explore the design space of chiplet systems and discover configurations that demonstrate average two-qubit gate infidelity reductions that are at best 0.815 × their monolithic counterpart. Lastly, we observe that carefully-selected modular systems achieve fidelity improvements on a range of benchmark circuits.

quantum architecture↗