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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,063 records · Page 59
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Electrochemical performance of CuO nanocrystal film fabricated by room temperature sputtering

Graphical abstract: High capacity of CuO thin film electrode for all-solid-state thin film batteries. Research highlights: {yields} Nanostructured CuO thin film is prepared by in situ sputtering. {yields} Excellent electrochemical performance with a very high capacity is achieved. {yields} Due to nanostructured grains, the in situ formed CuO possesses good cyclability. -- Abstract: To develop high performance anode materials for thin film batteries, copper oxide (CuO) film is fabricated at room temperature by reactive radio frequency magnetron sputtering. Morphological characterization shows that the CuO film consists of compacted CuO columnar grains of 20 nm in diameter and 200 nm in thickness. The measurement of lithium storage capacity and cyclability of the CuO film show that the first charge capacity of the film is 585 mAh g{sup -1} with an efficiency of 68.3% at a current density of 200 mA g{sup -1}. After the 50th cycle, the capacity retention remains as high as 97.4%. The nanostructured CuO film also shows a good rate capability even being cycled at 3000 mA g{sup -1} (5 C), demonstrating that the CuO film can be a promising material as an anode for high performance thin film batteries, especially for thin film battery with amorphous electrolyte.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Measurement of valence band structure in arbitrary dielectric films

A new way of measuring the band structure of various dielectric materials using the secondary electron emission from Auger neutralization of ions is introduced. The first example of this measurement scheme is the magnesium oxide (MgO) films with respect to the application of the films in the display industries. The density of state in the valence bands of MgO film and MgO film with a functional layer (FL) deposited over a dielectric surface reveals that the density peak of film with a FL is considerably less than that of film, thereby indicating a better performance of MgO film with functional layer in display devices. The second example of the measurement is the boron-zinc oxide (BZO) films with respect to the application of the films to the development of solar cells. The measurement of density of state in BZO film suggests that a high concentration of boron impurity in BZO films may enhance the transition of electrons and holes through the band gap from the valence to the conduction band in zinc oxide crystals; thereby improving the conductivity of the film. Secondary electron emission by the Auger neutralization of ions is highly instrumental for the determination of the density of states in the valence band of dielectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Structural and optical characterization of high-quality ZnO thin films deposited by reactive RF magnetron sputtering

Highlights: ► High-quality ZnO thin films were deposited at room temperature. ► Effect of O{sub 2} flow and RF sputtering voltages on properties of ZnO films were studied. ► O{sub 2}/Ar ratios played a key role in controlling optical properties of ZnO films. ► Photoluminescence intensity of the ZnO films strongly depended on O{sub 2}/Ar ratios. ► Crystallite size, stress and strain strongly depended on O{sub 2}/Ar ratios. - Abstract: ZnO thin films were deposited onto quartz substrates by radio frequency (RF) reactive magnetron sputtering using a Zn target. The structural and optical properties of the ZnO thin films were investigated comprehensively by X-ray diffraction (XRD), ultraviolet–visible and photoluminescence (PL) measurements. The effects of the oxygen content of the total oxygen–argon mixture and sputtering voltage in the sputtering process on the structural and optical properties of the ZnO films were studied systemically. The microstructural parameters, such as the lattice constant, crystallite size, stress and strain, were also calculated and correlated with the structural and optical properties of the ZnO films. In addition, the results showed that the crystalline quality of ZnO thin films improved with increasing O{sub 2}/Ar gas flow ratio from 2:8 to 8:2. XRD and PL spectroscopy revealed 800 V to be the most appropriate sputtering voltage for ZnO thin film growth. High-quality ZnO films with a good crystalline structure, tunable optical band gap as well as high transmittance could be fabricated easily by RF reactive magnetron sputtering, paving the way to obtaining cost-effective ZnO thin films transparent conducting oxides for optoelectronics applications.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Wet chemical synthesis of quantum confined nanostructured tin oxide thin films by successive ionic layer adsorption and reaction technique

Graphical abstract: - Highlights: • Quantum confined SnO{sub 2} thin films were synthesized at 80 °C by SILAR technique. • Film formation mechanism is discussed. • Films with snow like crystallite morphology offer high specific surface area. • The blue-shifted value of band gap confirmed the quantum confinement effect. • Present synthesis has advantages – low cost, low temperature and green friendly. - Abstract: Quantum confined nanostructured SnO{sub 2} thin films were synthesized at 353 K using ammonium chloride (NH{sub 4}Cl) and other chemicals by successive ionic layer adsorption and reaction technique. Film formation mechanism is discussed. Structural, morphological, optical and electrical properties were investigated and compared with the as-grown and annealed films fabricated without NH{sub 4}Cl solution. SnO{sub 2} films were polycrystalline with crystallites of tetragonal structure with grain sizes lie in the 5–8 nm range. Films with snow like crystallite morphology offer high specific surface area. The blue-shifted value of band gap of as-grown films confirmed the quantum confinement effect of grains. Refractive index of the films lies in the 2.1–2.3 range. Films prepared with NH{sub 4}Cl exhibit relatively lower resistivity of the order of 10{sup 0}–10{sup −1} Ω cm. The present synthesis has advantages such as low cost, low temperature and green friendly, which yields small particle size, large surface–volume ratio, and high crystallinity SnO{sub 2} films.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Chemical bonding and optoelectrical properties of ruthenium doped yttrium oxide thin films

Graphical abstract: IR transmittance of various transparent conductive materials (RYO films grown under RT, 400 °C and 600 °C, ITO films [2], Carbon Nano tube films [11], metal/dielectric multilayers [12]). - Highlights: • Y{sub 2}O{sub 3}:Ru (RYO) films were prepared on ZnS substrates by reactive magnetron sputtering. • Ru doping significantly decreases the resistivity and extends the transparent range. • Optical and electrical properties of RYO films can be tuned by substrate temperatures. • The RYO films exhibit excellent far-IR transmittance and electrical property. - Abstract: Highly infrared transparent conductive ruthenium doped yttrium oxide (RYO) films were deposited on zinc sulfide and glass substrates by reactive magnetron sputtering. The structural, optical, and electrical properties of the films as a function of growth temperature were studied. It is shown that the sputtered RYO thin films are amorphous and smooth surface is obtained. The infrared transmittance of the films increases with increasing the growth temperature. RYO films maintain greater than ∼65% transmittance over a wide wavelength range from 2.5 μm to 12 μm and the highest transmittance value reaches 73.3% at ∼10 μm. With increasing growth temperature, the resistivity changed in a wide range and lowest resistivity of about 3.36 × 10{sup −3} Ω cm is obtained at room temperature. The RYO thin films with high conductivity and transparency in IR spectral range would be suitable for infrared optical and electromagnetic shielding devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Microstructural, optical, and electrical properties of Ni–Al co-doped ZnO films prepared by DC magnetron sputtering

Graphical abstract: - Highlights: • Ni–Al co-doped ZnO (NiAl:ZnO) composite thin films were deposited by DC magnetron sputtering at room temperature. • All films showed a highly preferential (0 0 2) c-axis orientation. • XPS revealed the presence of metallic Ni, NiO, and Ni{sub 2}O{sub 3} states, and Ni atoms were successfully doped in the NiAl:ZnO films. • NiAl:ZnO (3 wt% Ni) film showed the lowest electrical resistivity of 2.59 × 10{sup −3} Ω cm. • Band gap widening (4.18 eV) was observed in the NiAl:ZnO films with 5 wt% Ni. - Abstract: Ni–Al co-doped ZnO (NiAl:ZnO) films with fixed Al content at 2 wt% and different Ni contents (2.5, 3, and 5 wt%) were deposited by DC magnetron sputtering in an argon atmosphere at room temperature. X-ray diffraction revealed that all films showed a highly preferential (0 0 2) c-axis orientation. XPS revealed the presence of metallic Ni, NiO, and Ni{sub 2}O{sub 3} states, and Ni atoms were successfully doped in NiAl:ZnO films, which did not result in a change in ZnO crystal structure and orientation. The electrical resistivity of NiAl:ZnO film was decreased to 2.59 × 10{sup −3} Ω cm at a Ni doping concentration of 3 wt% compared with undoped Al-doped ZnO film (5.58 × 10{sup −3} Ω cm). The mean optical transmittance in the visible range was greater than 80% for all films. Band gap widening (4.18 eV) was observed in the NiAl:ZnO films with 5 wt% Ni, attributed to the Burstein–Moss shift due to the increase of carrier concentration.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Enhancement on photocatalytic activity of an amorphous titanium oxide film with nano-textured surface by selective-fluorination etching process

Highlights: • The amorphous TiO{sub x} film surface was modified via selective fluorination etching process. • The resulting nano-textured surface markedly enriched the specific surface area and surface acidity. • The photocatalytic activity was comparable to an annealed TiO{sub x} film with anatase structure. - Abstract: A selective-fluorination etching process achieved by an UV light pre-irradiation and the subsequently fluorination etching was developed to enhance the photocatalytic activity of a low-temperature deposited amorphous titanium oxide (a-TiO{sub x}) film. Textured surface on the a-TiO{sub x} films formed by this process were investigated using atomic force microscope and field emission scanning electron microscope. Evidence of the fluorine ions introduced into the a-TiO{sub x} films was examined using Fourier transform infrared spectrometry and X-ray photoelectron spectroscopy. The etching thickness of the a-TiO{sub x} film was found to be deeply relevant to the film pre-irradiated by the UV light. An a-TiO{sub x} film with nano-textured surface, which was favorable to enlarge the specific surface area, thus was obtainable from the notable etching selectivity of the film pre-irradiated by UV light through a nano-sized mask. In addition, the surface acidity of the a-TiO{sub x} film was enhanced by the formation of the Ti-F chemical bonds originating from the fluorination etching process, which also was functional to facilitate the production of surface OH free radicals. Accordingly, the resulting fluorinated a-TiO{sub x} film with nano-textured surface performed a quality photocatalytic activity comparable to that of the high-temperature achieved TiO{sub x} film with anatase structures.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Microstructural and mechanical characteristics of Ni–Cr thin films

Highlights: • Ni–Cr thin films of varied composition deposited by DC magnetron co-sputtering. • Thin film with Ni–Cr: 80–20 at% composition exhibits most distinct behavior. • The films were tensile tested and exhibited no cracking till the substrate yielding. - Abstract: Ni–Cr alloy thin films have been deposited using magnetron co-sputtering technique at room temperature. Crystal structure was evaluated using GIXRD. Ni–Cr solid solution upto 40 at% of Cr exhibited fcc solid solution of Cr in Ni and beyond that it exhibited bcc solid solution of Ni in Cr. X-ray diffraction analysis shows formation of (1 1 1) fiber texture in fcc and (2 2 0) fiber texture in bcc Ni–Cr thin films. Electron microscopy in both in-plane and transverse direction of the film surface revealed the presence of columnar microstructure for films having Cr upto 40 at%. Mechanical properties of the films are evaluated using nanoindentation. The modulus values increased with increase of Cr at% till the film is fcc. With further increase in Cr at% the modulus values decreased. Ni–Cr film with 20 at% Ni exhibits reduction in modulus and is correlated to the poor crystallization of the film as reflected in XRD analysis. The Ni–Cr thin film with 80 at% Ni and 20 at% Cr exhibited the most distinct columnar structure with highest electrical resistivity, indentation hardness and elastic modulus.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Nd3+ Doping effect on the optical and electrical properties of SnO2 thin films prepared by nebulizer spray pyrolysis for opto-electronic application

Highlights: • High quality, Nd:SnO{sub 2} thin films prepared using simple nebulizer spray pyrolysis technique. • Characterizations of the films confirmed good crystallinity and smooth surface morphology. • High optical transparency with low electrical resistivity in nebulizer spray pyrolysis prepared Nd: SnO{sub 2} thin films is presented. - Abstract: Neodymium doped tin oxide (Nd: SnO{sub 2}) thin films were deposited on heated glass substrates with different Nd concentrations (0, 2, 4 and 6 %) by nebulizer spray pyrolysis method. Effects of Nd doping on structural, optical and electrical properties of the prepared films were investigated. X-ray diffraction study confirmed that all the deposited Nd: SnO{sub 2} films are in polycrystalline tetragonal structure with (211) preferential orientation. FESEM images showed that the prepared SnO{sub 2} particles are in nano-size in spherical shape, completely covering the substrate. AFM topology showed smooth deposition of the films with minimum surface roughness. The films showed maximum optical transmittance 90 % in the visible region with a band gap value 3.67 eV, also showed low refractive index and extinction coefficients. Room temperature photoluminescence (PL) spectrum exhibited a strong UV emission peak at 356 nm for all the films. All the Nd: SnO{sub 2} films displayed n-type conductivity with low electrical resistivity 5.88 × 10{sup −4} (Ω cm) for 4 % Nd doping. As the films showed good figure of merit (ϕ) values, these Nd doped SnO{sub 2} thin films can perform better role in optoelectronic device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Facile microwave synthesis of zirconium metal-organic framework thin films on gold and silicon and application to sensor functionalization

Zirconium-based metal-organic frameworks, including UiO-66 and related frameworks, have become the focus of considerable research in the area of chemical warfare agent (CWA) decontamination. However, little work has been reported exploring these metal-organic frameworks (MOFs) for CWA sensing applications. For many sensing approaches, the growth of high-quality thin films of the active material is required, and thin film growth methods must be compatible with complex device architectures. Several approaches to synthesize thin films of UiO-66 have been described but many of these existing methods are complex or time consuming. In this work, we describe the development of a simple and rapid microwave assisted synthesis of oriented UiO-66 thin films on unmodified silicon (Si) and gold (Au) substrates. Thin films of UiO-66 and UiO-66-NH 2 can be grown in as little as 2 min on gold substrates and 30 min on Si substrates. The film morphology and orientation are characterized and the effects of reaction time and temperature on thin film growth on Au are investigated. Both reaction time and temperature impact the overgrowth of protruding discrete crystallites in the thin film layer but, surprisingly, no strong correlation is observed between film thickness and reaction time or temperature. We also briefly describe the synthesis of Zr/Ce solid solution thin films of UiO-66 on Au and report the first synthesis of a solid solution thin film MOF. Finally, we demonstrate the utility of the microwave method for the facile functionalization of two sensor architectures, plasmonic nanohole arrays and microresonators, with UiO-66 thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A mathematical model of solid-state dewetting of barium thin films on W (112)

Solid state dewetting occurs when a thin solid film is heated. The temperature of dewetting depends on the thickness of the film; dewetting can be observed in the range of 1/3 to 1/2 of the bulk melting temperature. While remaining solid, the film behaves in a manner similar to liquids dewetting and agglomerating to forming islands or droplets. One of the possible mechanisms is the conversion of a metastable thin film geometry into a more stable form. Heating the metastable film gives the film atoms higher mobility, and the films retract, dewetting the surface. This atomic motion can be restricted due to surface anisotropy. Herein we present in situ emission microscopy observations of barium thin films deposited onto W (112) by thermal evaporation. From the modeling viewpoint, the evolution of the film in this system could be divided in four stages: (i) the nucleation and growth of the thin film as a simply connected region; (ii) formation of droplets/islands/hillocks; (iii) nucleation of holes; (iv) evolution of the components of the disconnected film to their equilibrium state. We present a continuum model that is qualitatively consistent with the evolution of the film observed at the initial stage of the experiment and discuss the later stages of the evolution of surface structures.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Structural and magnetic characterizations of Mn{sub 2}CrO{sub 4} and MnCr{sub 2}O{sub 4} films on MgO(001) and SrTiO{sub 3}(001) substrates by molecular beam epitaxy

In this report, we grow MnCr{sub 2}O{sub 4} (124) films, and Mn{sub 2}CrO{sub 4} (214) films, for comparison, on MgO and SrTiO{sub 3} (STO) substrates by oxygen-plasma-assisted molecular beam epitaxy and also carry out the measurements of the magnetization as a function of temperature (5-200 K) and external field (0-5 T) of these films. The results of magnetization versus temperature further show that ferrimagnetic transition (T{sub c}) occurs at 44 K for 214 films grown on both MgO and STO. The T{sub c} of 124 films raises to 45 K but is only observed for the film grown on STO. No or very weak magnetization is observed for the 124 films grown on MgO(001). The vanishing of the magnetization of the 124 films grown on MgO is attributed to the instability of spinel structure for Cr-rich films. Magnetic hysteresis curves of the films further show the magnetization saturation (M{sub s}) of 124 is <1/2 bohr magneton, which is noticeably smaller than the bulk M{sub s} {approx} 1 bohr magneton. The reduction of M{sub s} in these chromites films may result from the cation distribution in that Cr cations distribute in both A and B sites, which is different from the bulk materials. The distribution of Cr cations in both A and B is attributed to the low temperature growth and similar results have been found in previous growth of various ferrite films.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Nonlinear optical properties of ZnO/poly (vinyl alcohol) nanocomposite films

Extensive studies have already been reported on the optical characteristics of ZnO/polymer nanocomposite films, using a variety of polymers including transparent polymers such as polystyrene, polymethyl methacrylate etc and many interesting results have been established regarding the non linear optical characteristics of these systems. Poly (vinyl alcohol)(PVA) is a water soluble polymer. Though the structural and optical studies of ZnO/PVA nanocomposite films have already been investigated, there are no detailed reports on the nonlinear optical characteristics of ZnO/PVA nanocomposite films, irrespective of the fact that these nanocomposite films can be synthesized using quite easy and cost effective methods. The present work is an attempt to study in detail the nonlinear optical behaviour of ZnO/PVA nanocomposite films using Z-scan technique. Highly transparent ZnO/PVA nanocomposite films were prepared from the ZnO incorporated PVA solution in water using spin coating technique. The ZnO nanoparticles were synthesized by the simple chemical route at room temperature. High-resolution transmission electron microscopy studies show that the ZnO nanoparticles are of size around 10 nm. The ZnO/PVA nanocomposite films were structurally characterized by X-ray diffraction technique, from which the presence of both PVA and ZnO in the nanocomposite was established. The optical absorptive nonlinearity in the nanocomposite films was investigated using open aperture Z-scan technique. The results indicate optical limiting type nonlinearity in the films due to two photon absorption in ZnO with efficiency more than 50%. These films also show a self defocusing type negative nonlinear refraction in closed aperture Z-scan experiment. The present studies indicate that, highly transparent and homogeneous films of ZnO/PVA nanocomposite can be obtained on glass substrates using simple methods, in a highly cost effective way, since PVA is water soluble. These nanocomposite films offer prospects of application as efficient optical limiters to protect light sensitive devices from the possible damage on exposure to high intensity radiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Dual acceptor doping and aging effect of p-ZnO:(Na, N) nanorod thin films by spray pyrolysis

An attempt has been made to realize p-type ZnO by dual acceptor doping (Na-N) into ZnO thin films. Na and N doped ZnO thin films of different concentrations (0 to 8 at.%) have been grown by spray pyrolysis at 623 K. The grown films on glass substrate have been characterized by X-ray diffraction (XRD), Hall measurement, UV-Vis spectrophotometer, Photoluminescence (PL) and Energy dispersive spectroscopy (EDS) to validate the p-type conduction. The surface morphology and roughness of the ZnO:(Na, N) films are studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. Hall measurement shows that all the films exhibit p-type conductivity except for 0 at.% Na-N doped ZnO film. The obtained resistivity (5.60×10{sup −2} Ω cm) and hole concentration (3.15×10{sup 18} cm{sup −3}) for the best dual acceptor doped film is 6 at.%. It has been predicted that (Na{sub Zn}−N{sub O}) acceptor complex is responsible for the p-type conduction. The p-type conductivity of the ZnO:(Na, N) films is stable even after 6 months. The crystallinity of the films has been studied by XRD. Energy dispersive spectroscopy (EDS) confirms the presence of Na and N in 6 at.% ZnO:(Na, N) film. Photoluminescence (PL) spectra of ZnO:(Na, N) films show NBE and deep level emissions in the UV and visible regions, respectively. The ZnO:(Na, N) films exhibit a high transmittance about 90% in the visible region.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

36 MATERIALS SCIENCE↗
DOE OSTI2014

A close correlation between nanostructure formations and the thickness dependence of the critical current density in pure and BaSnO{sub 3}-added GdBa{sub 2}Cu{sub 3}O{sub 7-δ} films

A close correlation between the nanostructure formations and the thickness dependence of the in-field critical current density (J{sub c}) in GdBa{sub 2}Cu{sub 3}O{sub 7-δ} (GdBCO) films is reported. Pure and 2 wt. % BaSnO{sub 3} (BSO)-added GdBCO films with film thicknesses (d) ranging from 0.2 μm to 1.5 μm were deposited on SrTiO{sub 3} single-crystalline substrates by using a pulsed laser deposition technique. Magnetization data measured at 77 K with the magnetic field applied parallel to the c-axis of the films showed the general trend of decreasing in-field J{sub c} with increasing residual film thickness. The two special inversions, however, were observed at d ∼ 0.6 μm, for which the J{sub c}’s of both the pure and BSO-added GdBCO films were larger than those of the films with d ∼ 0.4 μm. A sequential ion-milling process and scanning electron microscopy studies were employed to examine the microstructural evolution in the 1.5- μm-thick GdBCO films. For the pure GdBCO films, nanosized dislocations were observed to start growing at intersections of perpendicularly connected a-axis-oriented grains in a residual film thickness (t) of ∼ 0.6 μm and the growth persisted to the top surface of the 1.5-μm-thick GdBCO film. For the BSO-added GdBCO films, the density of BSO nanorods was estimated to be decreased versus t with an increase found at t of ∼ 0.6 μm A reason for this inversions of J{sub c} might be the nanostructure formations at t ∼ 0.6 μm, which were proved to serve as effective pinning centers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Anomalous thickness-dependent strain states and strain-tunable magnetization in Zn-doped ferrite epitaxial films

A series of Zn{sub x}Fe{sub 3−x}O{sub 4} (ZFO, x = 0.4) thin films were epitaxially deposited on single-crystal (001)-SrTiO{sub 3} (STO) substrates by radio frequency magnetron sputtering. The anomalous thickness-dependent strain states of ZFO films were found, i.e., a tensile in-plane strain exists in the thinner ZFO film and which monotonously turns into compressive in the thicker films. Considering the lattice constant of bulk ZFO is bigger than that of STO, this strain state cannot be explained in the conventional framework of lattice-mismatch-induced strain in the hetero-epitaxial system. This unusual phenomenon is proposed to be closely related to the Volmer-Weber film growth mode in the thinner films and incorporation of the interstitial atoms into the island's boundaries during subsequent epitaxial growth of the thicker films. The ZFO/STO epitaxial film is found in the nature of magnetic semiconductor by transport measurements. The in-plane magnetization of the ZFO/STO films is found to increase as the in-plane compressive strain develops, which is further proved in the (001)-ZFO/PMN-PT film where the film strain state can be in situ controlled with applied electric field. This compressive-strain-enhanced magnetization can be attributed to the strain-mediated electric-field-induced in-plane magnetic anisotropy field enhancement. The above results indicate that strain engineering on magnetic oxide semiconductor ZFO films is promising for novel oxide-electronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar), oxygen (O{sub 2}), hydrogen (H{sub 2}) and nitrogen (N{sub 2}) to enhance the electrical and optical performances of indium tin oxide (ITO) films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O{sub 2}+H{sub 2} ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance) of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O{sub 2}, H{sub 2} on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O{sub 2} and Ar+O{sub 2}+H{sub 2}. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O{sub 2}+H{sub 2} sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O{sub 2}+H{sub 2} ambient combinations shows a decreased sheet resistance (5.06 ohm/□) and increased optical transmittance (69%) than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O{sub 2}+H{sub 2} ambient is a good choice to enhance the total optoelectronic properties of the ITO films. The improved electrical and optical properties of ITO films with respect to the Ar+O{sub 2}+H{sub 2} ambient sample were discussed in detail. In addition, the physical properties were also discussed with the influence of this ambient combination with respect to Ar, Ar+O{sub 2} and Ar+O{sub 2}+H{sub 2}.

36 MATERIALS SCIENCE↗